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    FAST RECOVERY DIODE 600V 1200A Search Results

    FAST RECOVERY DIODE 600V 1200A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    FAST RECOVERY DIODE 600V 1200A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IDW100E60 Fast Switching Emitter Controlled Diode A Features: • 600V Emitter Controlled technology  Fast recovery  Soft switching  Low reverse recovery charge  Low forward voltage  175 °C junction operating temperature  Easy paralleling


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    PDF IDW100E60 PG-TO-247-3 D100E60

    R/1N5815 Diode

    Abstract: No abstract text available
    Text: IDW75E60 Fast Switching Emitter Controlled Diode Features: • 600V EmCon technology  Fast recovery  Soft switching  Low reverse recovery charge  Low forward voltage  175°C junction operating temperature  Easy paralleling  Pb-free lead plating; RoHS compliant


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    PDF IDW75E60 PG-TO247-3 D75E60 R/1N5815 Diode

    d100e60

    Abstract: IDW100E60
    Text: IDW100E60 Fast Switching Emitter Controlled Diode Features: • 600V Emitter Controlled technology  Fast recovery  Soft switching  Low reverse recovery charge  Low forward voltage  175°C junction operating temperature  Easy paralleling  Pb-free lead plating; RoHS compliant


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    PDF IDW100E60 PG-TO247-3 D100E60 d100e60 IDW100E60

    1000V 20A transistor

    Abstract: fast recovery diode 600v 1200A 500V 100A thyristors diode 500A diode IC data book free download 600v RM400HA-34S DIODE 200A 600V fast recovery
    Text: Powerex Fast Recovery Single Diode Modules 7/3/2003 500V 600V 600V 1000V 1200V CS340602 20A Ic A *click on the products for additional information 1200V 1400V 25A CS240650 QRS0620T30 250A 50A 100A CS241210 200A 35A RM35HG-34S CS240610 CS241020 QRS1220T30


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    PDF CS340602 CS341202 RM25HG-24S CS241250 CS240650 CS240610 CS241210 QRS0620T30 CS241020 QRS1220T30 1000V 20A transistor fast recovery diode 600v 1200A 500V 100A thyristors diode 500A diode IC data book free download 600v RM400HA-34S DIODE 200A 600V fast recovery

    P channel 600v 30a IGBT

    Abstract: step recovery diode 10a ultra fast diode EPE99 30A ultra fast diode 600v 10A ultra fast recovery diode fast recovery diode 1000v 10A fast recovery diode 600v 5A 30A, 600v DIODE Switching Characteristics of Fast Recovery Diodes
    Text: C-Class Ultra Fast Recovery Diodes for High Speed Switching Applications M.T. Rahimo, S. R. Jones Power Division, Semelab plc., Coventry Road, Lutterworth, Leicestershire, LE17 4JB, United Kingdom. Tel + 44 1455 552505, Fax + 44 1455 552612, E-mail mrahimo@semelab.co.uk


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    PDF June-97, May-98, P channel 600v 30a IGBT step recovery diode 10a ultra fast diode EPE99 30A ultra fast diode 600v 10A ultra fast recovery diode fast recovery diode 1000v 10A fast recovery diode 600v 5A 30A, 600v DIODE Switching Characteristics of Fast Recovery Diodes

    Untitled

    Abstract: No abstract text available
    Text: DFM600FXM12-A000 Fast Recovery Diode Module Replaces DS5478-1.3 DS5478-2 April 2010 LN26759 FEATURES • Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates  Dual Diodes can be paralleled for 1200A Rating


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    PDF DFM600FXM12-A000 DS5478-1 DS5478-2 LN26759) DFM600FXM12-A000

    DFM1200FXS12-A000

    Abstract: DFM1200FXS12-A fast recovery diode 600v 1200A mj 13005
    Text: DFM1200FXS12-A000 Fast Recovery Diode Module Replaces DS5645-1.1 FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop DS5845-2 April 2010 LN26743 KEY PARAMETERS VRRM VF IF IFM 1200V 1.9V 1200A 2400A (typ) (max) (max) Isolated Cu Base with Al2O3 Substrates


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    PDF DFM1200FXS12-A000 DS5645-1 DS5845-2 LN26743) DFM1200FXS12-A000 DFM1200FXS12-A fast recovery diode 600v 1200A mj 13005

    Untitled

    Abstract: No abstract text available
    Text: DFM1200FXS12-A000 Fast Recovery Diode Module Replaces DS5645-1.1 FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop DS5845-2 April 2010 LN26743 KEY PARAMETERS VRRM VF IF IFM 1200V 1.9V 1200A 2400A (typ) (max) (max) Isolated Cu Base with Al2O3 Substrates


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    PDF DFM1200FXS12-A000 DS5645-1 DS5845-2 LN26743) DFM1200FXS12-A000

    DFM600FXM12-A000

    Abstract: DFM600FXM12-A 4500a IEC1287
    Text: DFM600FXM12-A000 Fast Recovery Diode Module Replaces DS5478-1.3 DS5478-2 April 2010 LN26759 FEATURES • Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates  Dual Diodes can be paralleled for 1200A Rating


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    PDF DFM600FXM12-A000 DS5478-1 DS5478-2 LN26759) DFM600FXM12-A000 DFM600FXM12-A 4500a IEC1287

    DFM600BXS12-A000

    Abstract: No abstract text available
    Text: DFM600BXS12-A000 Fast Recovery Diode Module PDS5725-1.3 October 2007 LN25580 FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF (typ) IF (max) IFM (max) 1200V 2.0 V 600A 1200A Isolated Base APPLICATIONS


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    PDF DFM600BXS12-A000 PDS5725-1 LN25580) DFM600BXS12-A000

    fast recovery diode 600v 1200A

    Abstract: DFM1200EXM12-A000 DFM1200FXM12-A000 DIODE 33 25
    Text: DFM1200EXM12-A000 DFM1200EXM12-A000 Fast Recovery Diode Module DS5481-1.2 July 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 1200V 1.9V 1200A 2400A ■ Isolated Base


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    PDF DFM1200EXM12-A000 DS5481-1 fast recovery diode 600v 1200A DFM1200EXM12-A000 DFM1200FXM12-A000 DIODE 33 25

    induction heating circuits

    Abstract: High Frequency Induction Heating DFM600LXS12-A000
    Text: DFM600LXS12-A000 DFM600LXS12-A000 Fast Recovery Diode Module DS5477-1.2 July 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 1200V 1.9V 600A 1200A ■ Isolated Base


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    PDF DFM600LXS12-A000 DS5477-1 DFM600LXS12-A000 induction heating circuits High Frequency Induction Heating

    Untitled

    Abstract: No abstract text available
    Text: DFM600FXS12-A000 Fast Recovery Diode Module DS5847-1.0 June 2005 LN23947 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Dual Diodes Can be paralleled for 1200A Rating •


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    PDF DFM600FXS12-A000 DS5847-1 LN23947) DFM600FXS12-A000

    DFM600FXM12-A000

    Abstract: No abstract text available
    Text: DFM600FXM12-A000 Fast Recovery Diode Module DS5478-1.3 November 2007 LN25320 FEATURES KEY PARAMETERS Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop Isolated Copper Base plate VRRM VF IF IFM (typ) (max) (max) 1200V 1.9V 600A 1200A


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    PDF DFM600FXM12-A000 DS5478-1 LN25320) DFM600FXM12-A000

    DFM600FXS12-A000

    Abstract: No abstract text available
    Text: DFM600FXS12-A000 Fast Recovery Diode Module DS5847-1.1 June 2007 LN25319 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Dual Diodes Can be paralleled for 1200A Rating •


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    PDF DFM600FXS12-A000 DS5847-1 LN25319) DFM600FXS12-A000

    DFM1200FXM12-A000

    Abstract: No abstract text available
    Text: DFM1200FXM12-A000 Fast Recovery Diode Module DS5480-1.3 November 2007 LN25323 FEATURES Low Reverse Recovery Charge High Switching Speed VRRM VF IF IFM (typ) (max) (max) 1200V 1.9V 1200A 2400A Low Forward Voltage Drop Isolated Copper Base plate AlSiC Baseplate With AIN Substrates


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    PDF DFM1200FXM12-A000 DS5480-1 LN25323) DFM1200FXM12-A000

    PCIM-2001

    Abstract: PM50 120 pm200cla120 1200v diode IGBT 2000V .50A high current igbt PM600CLA060
    Text: Speed Shifting Gate Drive for Intelligent Power Modules Eric R. Motto, John F. Donlon Powerex Incorporated 200 Hillis Street Youngwood, Pennsylvania, USA Abstract - This paper describes a new family of intelligent power modules utilizing a novel gate driver that automatically adjusts its driving


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    PDF PCIM2001 PCIM-2001 PM50 120 pm200cla120 1200v diode IGBT 2000V .50A high current igbt PM600CLA060

    DFM1200FXM12-A000

    Abstract: No abstract text available
    Text: DFM1200FXM12-A000 DFM1200FXM12-A000 Fast Recovery Diode Module DS5480-1.2 July 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 1200V 1.9V 1200A 2400A ■ Isolated Base


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    PDF DFM1200FXM12-A000 DS5480-1 DFM1200FXM12-A000

    DFM600FXM12-A000

    Abstract: No abstract text available
    Text: DFM600FXM12-A000 DFM600FXM12-A000 Fast Recovery Diode Module DS5478-1.2 July 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 1200V 1.9V 600A 1200A ■ Isolated Base


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    PDF DFM600FXM12-A000 DS5478-1 DFM600FXM12-A000

    GATE VOLTAGE FOR 300A ,600V IGBT

    Abstract: fast recovery diode 600v 1200A IGBT DRIVE 600V 300A igbt 600V diode 600v IGBT 600V 16 QIQ0630003
    Text: QIQ0630003 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy


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    PDF QIQ0630003 -1200A/ GATE VOLTAGE FOR 300A ,600V IGBT fast recovery diode 600v 1200A IGBT DRIVE 600V 300A igbt 600V diode 600v IGBT 600V 16 QIQ0630003

    igbt 600V 300A

    Abstract: QIQ0630003 GATE VOLTAGE FOR 300A ,600V IGBT E1. N diode IGBT 600V 16 igbt 600V IGBT DRIVE 600V 300A
    Text: QIQ0630003 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy


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    PDF QIQ0630003 -1200A/S igbt 600V 300A QIQ0630003 GATE VOLTAGE FOR 300A ,600V IGBT E1. N diode IGBT 600V 16 igbt 600V IGBT DRIVE 600V 300A

    K40T1202

    Abstract: IGBT K40T1202 K40T120 IKW40N120 IKW40N120T2 PG-TO-247-3-21 IGBT 40A k40t12
    Text: nd IKW40N120T2 TrenchStop 2 Generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs


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    PDF IKW40N120T2 K40T1202 IGBT K40T1202 K40T120 IKW40N120 IKW40N120T2 PG-TO-247-3-21 IGBT 40A k40t12

    K40T1202

    Abstract: IGBT K40T1202 K40T120 IKW40N120T2 1200v 50A IGBT
    Text: TrenchStop Low Loss DuoPack : nd IKW40N120T2 2 Generation Series IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs


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    PDF IKW40N120T2 K40T1202 IGBT K40T1202 K40T120 IKW40N120T2 1200v 50A IGBT

    IGBT DRIVE 600V 300A

    Abstract: what is fast IGBT transistor igbt 600V 300A QIQ0630003 fast recovery diode 600v 1200A
    Text: QIQ0630003 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy


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    PDF QIQ0630003 -1200A/ IGBT DRIVE 600V 300A what is fast IGBT transistor igbt 600V 300A QIQ0630003 fast recovery diode 600v 1200A