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    FAP DARLINGTON TRANSISTOR Search Results

    FAP DARLINGTON TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FAP DARLINGTON TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    temperature based speed control of exhaust fan using triac circuit diagram

    Abstract: "OPTIMUM SNUBBERS FOR POWER SEMICONDUCTORS" simple schematic diagram PWM 40a hydrogen EI - 33c TRANSFORMER EI 33c TRANSFORMER General Electric SCR Manual, Fifth Edition, 1972 rectifiers and zener diodes data NCP1200 CROSS REFERENCE pc smps transistor manual substitution RCA Solid state Linear Integrated Circuits 1970s
    Text: HB214/D Rev. 2, Nov-2001 Rectifier Applications Handbook Rectifier Applications Handbook ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


    Original     		PDF HB214/D Nov-2001 NCP1200 MBRS360T3 MUR160 r14525 HB214/D temperature based speed control of exhaust fan using triac circuit diagram "OPTIMUM SNUBBERS FOR POWER SEMICONDUCTORS" simple schematic diagram PWM 40a hydrogen EI - 33c TRANSFORMER EI 33c TRANSFORMER General Electric SCR Manual, Fifth Edition, 1972 rectifiers and zener diodes data NCP1200 CROSS REFERENCE pc smps transistor manual substitution RCA Solid state Linear Integrated Circuits 1970s

    Untitled

    Abstract: No abstract text available
    Text: H A 1 6 8 1 6 N T /M P SLIC IC for Key Telephone Applications Pin Arrangement Features • Basic Functions: Internal battery feed control (B), loop super­ vision (S) and 2w-4w conversion (H) • Constant Current Feed: +24V Supply voltage • Internal darlington power transistor


    OCR Scan     		PDF HA16816NT HA16816NT/MP HA16816NT) HA16816MP)

    DIP44-pin

    Abstract: ha1681
    Text: HA16816NT/MP SLIC IC for Key Telephone Applications Features • Basic Functions: Internal battery feed control B , loop super­ vision (S) and 2w-4w conversion (H) • Constant Current Feed: +24V Supply voltage • Internal darlington power transistor • Ring trip detection


    OCR Scan     		PDF HA16816NT/MP DIP44-pin ha1681

    Untitled

    Abstract: No abstract text available
    Text: HA16811ANT/H A16811 AMP SLIC IC for PBX Applications Bipolar linear process monolithic SLIC IC for PBX applications »in Arrangement HA16811ANT Features • • • • • • • Basic Functions: Internal battery feed control B , loop supervi­ sion (S) and 2 W-4 W conversion


    OCR Scan     		PDF HA16811ANT/H A16811 HA16811ANT resist00 i----------------------500

    transistor npn bf 422

    Abstract: 1R002 431 capacitor NCC hitachi pbx ha16811
    Text: HA16811ANT/HA16811 AMP SLIC IC fo r PBX A pplications Bipolar linear process monolithic SLIC IC for PBX applications »in A rrangem ent HA16811ANT Features • • • • • • • • Basic Functions: Internal battery feed control B , loop supervi­ sion (S) and 2 W-4 W conversion


    OCR Scan     		PDF A16811ANT/H A16811 transistor npn bf 422 1R002 431 capacitor NCC hitachi pbx ha16811

    Untitled

    Abstract: No abstract text available
    Text: H A 1 6 8 1 1 A N T /H A 1 6811 A M P SLIC IC for PBX Applications Bipolar linear process monolithic SLIC IC for PBX applications Features • Basic Functions: Internal battery feed control B , loop supervi­ sion (S) and 2 W-4 W conversion Constant Current Feed: -2 4 V Supply voltage


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HA16817ANT/HA16817 AMP SLIC IC for PBX Applications Bipolar linear process monolithic SLIC IC for PBX applications Features • Pin Arrangement HA16817ANT Basic Functions: Internal battery feed control B , loop monitor • • • (S) and 2 W -4 W conversion


    OCR Scan     		PDF HA16817ANT/HA16817 HA16817ANT HA16817ANT/HA16817AMP

    pin diagram of BF 697 S transistor

    Abstract: HA16811A HA16811ANT hitachi pbx
    Text: H A 1 6 8 1 1 A N T /H A 1 6 8 1 1 A M P SLIC IC fo r PBX A p p lic a tio n s Bipolar linear process monolithic SLIC IC for PBX applications Pin Arrangement HA16811ANT Features • Basic Functions: Internal battery feed control B , loop supervi­ sion (S) and 2 W-4 W conversion


    OCR Scan     		PDF HA16811ANT/HA16811AMP pin diagram of BF 697 S transistor HA16811A HA16811ANT hitachi pbx

    BF 914 transistor

    Abstract: HA16817ANT RDI1 - 0,2 V ha16817
    Text: H A 16 8 1 7 A N T /H A 16 8 1 7 A M P SLIC IC for PBX Applications Bipolar linear process monolithic SLIC IC for PBX applications Features • • • • • • Pin Arrangement HA16817ANT Basic Functions: Internal battery feed control B , loop monitor


    OCR Scan     		PDF HA16817ANT/HA16817AM HA16817ANT/HA16817AMP BF 914 transistor HA16817ANT RDI1 - 0,2 V ha16817

    hitachi pbx

    Abstract: HA16817 BF ka
    Text: H A 1 6 8 1 7 N T /H A 1 6 8 1 7 M P Preliminary S L IC IC for PBX Applications Bipolar linear process monolithic SLIC IC for PBX applications Pin Arrangement HA16817NT Features • Basic Functions: Internal battery feed control B , loop monitor (S ) and 2 W-4 W conversion


    OCR Scan     		PDF HA16817NT HA16817MP HA16817NT HA16817 HA16817A HA16817NT/HA16817MP hitachi pbx BF ka

    Untitled

    Abstract: No abstract text available
    Text: HA16817NT/HA16817MP Prelim inary SLICIC for PBX Applications Bipolar linear process monolithic S LIC IC for PB X applications HA16817NT Features • Pin Arrangement Basic Functions: Internal battery feed control B , loop monitor V« RS (S ) and 2 W - 4 W conversion


    OCR Scan     		PDF HA16817NT/HA16817MP HA16817NT

    32 channel Relay controller IC

    Abstract: e35r "2W to 4W" conversion ic Input 24V Output 5V 2W DC DC LF177
    Text: H A 1 6 8 1 6 N T /M P SLIC IC for Key Telephone Applications Pin A rrangem ent Features • Basic Functions: Internal battery feed control (B), loop super­ vision (S) and 2w-4w conversion (H) • Constant Current Feed: +24V Supply voltage • Internal darlington power transistor


    OCR Scan     		PDF HA16816NT/MP HA16816NT) HA16816NT/MP HA16816MP) 600S2 32 channel Relay controller IC e35r "2W to 4W" conversion ic Input 24V Output 5V 2W DC DC LF177

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    MG100J2YS40

    Abstract: FAp DARLINGTON TRANSISTOR TOSHIBA IGBT snubber ap 5331 application POWER MOSFET HIG VELOCITY calculation of IGBT snubber P-Channel IGBT TRANSISTOR EN SMD TZ FAp DARLINGTON SMD TRANSISTOR
    Text: TOSHIBA 2. [ 5 ] IGBT Description IGBT Construction 2.1 Chip Construction IGBT Insulated G ate B ipolar T ransistors are devices which combine the high in p u t im pedance and high speed of th e M OSFET w ith the high conductivity characteristics (low sa tu ratio n


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