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    FAIRCHILD LOT CODES Search Results

    FAIRCHILD LOT CODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54ABT245/BRA Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801QRA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    74F403SPC Rochester Electronics LLC Replacement for Fairchild part number 74F403SPC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54F38/QCA Rochester Electronics LLC Replacement for Fairchild part number 54F38/BCA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    93425ADM/B Rochester Electronics LLC Replacement for Fairchild part number 93425ADMQB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54ABT245/B2A Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801Q2A. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    FAIRCHILD LOT CODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Mil-Std-883 Wire Bond Pull Method 2011

    Abstract: marking codes fairchild M1014C C6550 A101 A102 ultrasonic m2010 SCD 2028 10-30X Fairchild Lot codes
    Text: Quality/Reliability Fairchild Semiconductor’s Commitment to Customers The company has embraced the Total Quality Management TQM concept for continuously improving its products and services. Infant Mortality Failure Rate Fairchild Semiconductor is dedicated to providing innovative


    Original     		PDF 65-QR01 14-lead, 16-lead, 10-lead, O-100 24-lead, Mil-Std-883 Wire Bond Pull Method 2011 marking codes fairchild M1014C C6550 A101 A102 ultrasonic m2010 SCD 2028 10-30X Fairchild Lot codes

    93c46ln

    Abstract: 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN
    Text: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .


    Original     		PDF MTC08 VBH48A VEH64A 93c46ln 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN

    marking codes fairchild

    Abstract: FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES national marking code 8 soic 24C02 code example assembly Fairchild 24C02 NATIONAL SEMICONDUCTOR MARKING CODE TSSOP 24C02 national M08A FZ83TT NM24C02LMT8
    Text: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .


    Original     		PDF MTC08 VBH48A VEH64A marking codes fairchild FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES national marking code 8 soic 24C02 code example assembly Fairchild 24C02 NATIONAL SEMICONDUCTOR MARKING CODE TSSOP 24C02 national M08A FZ83TT NM24C02LMT8

    marking codes fairchild

    Abstract: NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ
    Text: Non-Volatile Memory - EPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines J24AQ . 4


    Original     		PDF J24AQ J28AQ J28CQ J32AQ J40BQ MBS28A marking codes fairchild NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ

    AH6-C-97-14

    Abstract: cd4012 5962R9673801VXA 54AC00 54AC14 Fairchild 54ac14 LM119 54ABT244J-QML Rad 54ac00 DS90C032
    Text: Volume No. 19 2000 CONTENTS TO INFINITY . AND BEYOND! Page 1 To Infinity . and Beyond ational Semiconductor’s Enhanced Solutions recently and proudly received a visit from Dr. Buzz Aldrin. It was just over 30 years ago that Apollo 11 landed on the


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: 7900801CA lm6482a 5962-8993001MIA replacement for 11c90 TRANSISTOR SMD MARKING CODE QA LM311 SMD JM38510/10305BEA LM714h Motorola semiconductor smd marking codes
    Text: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1998 Listing GIDEP Nr: GIDEP Category: Issued: 01/06/98 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):


    Original     		PDF

    CLAY31

    Abstract: van allen belt satellite pico electronics transformers airmate CLC452 F100K LM117 LM7171 10195 solar cell national semiconductor 400045
    Text: VOLUME NO. 14 1998 Industry Migrates to Bare Die and Known Good Die – Virtual Packaging Known Good Die I t was just a few years ago that electronics designers who wanted the smallest form factor for system upgrades were limited to assorted surface-mount packages. More recently, this has


    Original     		PDF

    FDB6690A

    Abstract: amd athlon PIN LAYOUT Motorola MBRS130L FAN5093 FAN5193 MBRD835L MBRS130L R10-14
    Text: www.fairchildsemi.com FAN5193 Two Phase Interleaved Synchronous Buck Converter Features Description • Programmable output from 1.10V to 1.85V in 25mV steps using an integrated 5-bit DAC • Two interleaved synchronous phases for maximum performance • 100nsec response time


    Original     		PDF FAN5193 100nsec 200KHz DS30005193 FDB6690A amd athlon PIN LAYOUT Motorola MBRS130L FAN5093 FAN5193 MBRD835L MBRS130L R10-14

    capacitor 1000uF 16V

    Abstract: 2N2222 capacitance capacitor 1uF 25V
    Text: www.fairchildsemi.com FAN5093 Two Slice Interleaved Synchronous Buck Converter Features Description • Programmable output from 1.10V to 1.85V in 25mV steps using an integrated 5-bit DAC • Two interleaved synchronous slices for maximum performance • 100nsec response time


    Original     		PDF FAN5093 100nsec 200KHz DS30005093 capacitor 1000uF 16V 2N2222 capacitance capacitor 1uF 25V

    FAN5093

    Abstract: MBRD835L MBRS130L MMBD4148 R10-14 622k
    Text: www.fairchildsemi.com FAN5093 Two Phase Interleaved Synchronous Buck Converter Features Description • Programmable output from 1.10V to 1.85V in 25mV steps using an integrated 5-bit DAC • Two interleaved synchronous phases for maximum performance • 100nsec response time


    Original     		PDF FAN5093 100nsec 200KHz DS30005093 FAN5093 MBRD835L MBRS130L MMBD4148 R10-14 622k

    marking codes fairchild

    Abstract: FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES Fairchild Lot codes national marking code national marking date code ALPHA YEAR DATE CODE ALPHA MARKING DATE CODE NATIONAL SEMICONDUCTOR MARKING CODE plcc ALPHA YEAR CODE NM27C256N
    Text: Part Marking Part Marking Product and package designators, as well as die and assembly lot information, are printed on the top side of the Fairchild EPROM. An explanation of these markings is listed below using the 256K and 1 Meg EPROM as examples. Space Available by Package


    OCR Scan     		PDF NM27C256Q120 NM27LV010BT250 NM27C256C120 NM27C256V120 NM27C256Q NM27LV010BT NM27C256N 12gnating NM27C256Q) marking codes fairchild FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES Fairchild Lot codes national marking code national marking date code ALPHA YEAR DATE CODE ALPHA MARKING DATE CODE NATIONAL SEMICONDUCTOR MARKING CODE plcc ALPHA YEAR CODE

    marking codes fairchild

    Abstract: national marking code 8 soic 24C02 national Fairchild 24C02 24C02LN FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES 24C02 line Fairchild Lot codes IC 24C02 lmt8 national
    Text: Part Marking Part Marking Applications require sm aller and sm aller packaging for the E E P R O M family of products. In order to support the quality and reliability efforts, certain die and assem bly lot information is required to be printed on the packaged device. The space con-


    OCR Scan     		PDF 24C02LN, 24C02LM 24C02) 24C02; marking codes fairchild national marking code 8 soic 24C02 national Fairchild 24C02 24C02LN FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES 24C02 line Fairchild Lot codes IC 24C02 lmt8 national

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R tm FDS8433A Single P-Channel 2.5V Specified MOSFET General Description Features This P-Channel enhancement mode power field effect • -5 A, -20 V. RDS on = 0.045 £2 @ VQS = -4.5 V transistors is produced using Fairchild’s proprietary,


    OCR Scan     		PDF FDS8433A

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R PRELIMINARY tm FDS6690S N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level M O SFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state


    OCR Scan     		PDF FDS6690S

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD S E M IC O N D U C T O R April 1999 tm FDS6961 A Dual N-Channel Logic Level MOSFET PowerTrench Features General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been


    OCR Scan     		PDF FDS6961

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R February 1999 tm FDS4953 MOSFET Dual P-Channel, Logic Level, PowerTrench General Description Features These P-Channel Logic Level M OSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		PDF FDS4953

    Untitled

    Abstract: No abstract text available
    Text: SE M IC O N D U C T O R tm FDS5680 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel M O S FE T is produced using Fairchild Semiconductor's advanced PowerTrench process that has been e sp e cia lly tailored to m inim ize on-state


    OCR Scan     		PDF FDS5680 tre795

    Untitled

    Abstract: No abstract text available
    Text: February 1999 FAIRCHILD S E M IC O N D U C T O R tm FDS69 75 MOSFET Dual P-Channel, Logic Level, PowerTrench General Description Features These P-Channel Logic Level M OSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		PDF FDS69

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R tm FDS5670 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM


    OCR Scan     		PDF FDS5670

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R tm NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description This P-Channel enhancement mode power field ef­ • -2.8 A, -20 V. RDS on = 0.14 « @ VQS = -4.5 V fect transistor is produced using Fairchild’s propri­


    OCR Scan     		PDF NDS9933A DC/95

    Untitled

    Abstract: No abstract text available
    Text: ,V U .g July 1999 U M fc P A I R C H I L_D FDS6890A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified M OSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored


    OCR Scan     		PDF FDS6890A

    Untitled

    Abstract: No abstract text available
    Text: April 1999 FAIRCHILD =Ml C O N D U C TO R tm FDS6630A N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level M OSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to m inimize on-state


    OCR Scan     		PDF FDS6630A

    Untitled

    Abstract: No abstract text available
    Text: FEA TU R ES • 256 x 1 photosite array ■ ■ ■ ■ ■ ■ ■ 13pm * 17pm photosiles on 13pm pitch Dynam ic range typical: 7000:1 O n-chip video and com pensation amplifiers Low pow er requirements All operating voltages 15V and under Low noise equivalent exposure


    OCR Scan     		PDF CCD111 256-element CCD110F.

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R PRELIMINARY tm FDS5680 Single N-Channel PowerTrench MOSFET G eneral D escription Features T h is N -C h a n n e l Lo g ic Level M O S F E T is p ro d u ce d using Fairchild S em iconductor's ad vanced P ow erTrench process th a t h a s be en e s p e c ia lly ta ilo re d to m in im iz e o n -s ta te


    OCR Scan     		PDF FDS5680