marking codes fairchild
Abstract: FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES Fairchild Lot codes national marking code national marking date code ALPHA YEAR DATE CODE ALPHA MARKING DATE CODE NATIONAL SEMICONDUCTOR MARKING CODE plcc ALPHA YEAR CODE NM27C256N
Text: Part Marking Part Marking Product and package designators, as well as die and assembly lot information, are printed on the top side of the Fairchild EPROM. An explanation of these markings is listed below using the 256K and 1 Meg EPROM as examples. Space Available by Package
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NM27C256Q120
NM27LV010BT250
NM27C256C120
NM27C256V120
NM27C256Q
NM27LV010BT
NM27C256N
12gnating
NM27C256Q)
marking codes fairchild
FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES
Fairchild Lot codes
national marking code
national marking date code
ALPHA YEAR DATE CODE
ALPHA MARKING DATE CODE
NATIONAL SEMICONDUCTOR MARKING CODE plcc
ALPHA YEAR CODE
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Mil-Std-883 Wire Bond Pull Method 2011
Abstract: marking codes fairchild M1014C C6550 A101 A102 ultrasonic m2010 SCD 2028 10-30X Fairchild Lot codes
Text: Quality/Reliability Fairchild Semiconductor’s Commitment to Customers The company has embraced the Total Quality Management TQM concept for continuously improving its products and services. Infant Mortality Failure Rate Fairchild Semiconductor is dedicated to providing innovative
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65-QR01
14-lead,
16-lead,
10-lead,
O-100
24-lead,
Mil-Std-883 Wire Bond Pull Method 2011
marking codes fairchild
M1014C
C6550
A101
A102
ultrasonic m2010
SCD 2028
10-30X
Fairchild Lot codes
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93c46ln
Abstract: 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN
Text: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .
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MTC08
VBH48A
VEH64A
93c46ln
93s46 eprom
marking codes fairchild
24U02
93S46 eeprom
FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES
F46L
24C02 code example assembly
93S46
24C02LN
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marking codes fairchild
Abstract: national marking code 8 soic 24C02 national Fairchild 24C02 24C02LN FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES 24C02 line Fairchild Lot codes IC 24C02 lmt8 national
Text: Part Marking Part Marking Applications require sm aller and sm aller packaging for the E E P R O M family of products. In order to support the quality and reliability efforts, certain die and assem bly lot information is required to be printed on the packaged device. The space con-
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24C02LN,
24C02LM
24C02)
24C02;
marking codes fairchild
national marking code 8 soic
24C02 national
Fairchild 24C02
24C02LN
FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES
24C02 line
Fairchild Lot codes
IC 24C02
lmt8 national
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marking codes fairchild
Abstract: FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES national marking code 8 soic 24C02 code example assembly Fairchild 24C02 NATIONAL SEMICONDUCTOR MARKING CODE TSSOP 24C02 national M08A FZ83TT NM24C02LMT8
Text: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .
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MTC08
VBH48A
VEH64A
marking codes fairchild
FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES
national marking code 8 soic
24C02 code example assembly
Fairchild 24C02
NATIONAL SEMICONDUCTOR MARKING CODE TSSOP
24C02 national
M08A
FZ83TT
NM24C02LMT8
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marking codes fairchild
Abstract: NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ
Text: Non-Volatile Memory - EPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines J24AQ . 4
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J24AQ
J28AQ
J28CQ
J32AQ
J40BQ
MBS28A
marking codes fairchild
NM27C256N
J28AQ
FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES
J24AQ
J28CQ
N40A
V44A
VA32A
J40BQ
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C TO R tm FDS8433A Single P-Channel 2.5V Specified MOSFET General Description Features This P-Channel enhancement mode power field effect • -5 A, -20 V. RDS on = 0.045 £2 @ VQS = -4.5 V transistors is produced using Fairchild’s proprietary,
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FDS8433A
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C TO R PRELIMINARY tm FDS6690S N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level M O SFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state
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FDS6690S
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Untitled
Abstract: No abstract text available
Text: =M l C O N D U C T O R tm FDS6630A N-Channel Logic Level PowerTrench MOSFET General Description Features This N -C hannel Logic Level M O S F E T is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to m inim ize on-state
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FDS6630A
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AH6-C-97-14
Abstract: cd4012 5962R9673801VXA 54AC00 54AC14 Fairchild 54ac14 LM119 54ABT244J-QML Rad 54ac00 DS90C032
Text: Volume No. 19 2000 CONTENTS TO INFINITY . AND BEYOND! Page 1 To Infinity . and Beyond ational Semiconductor’s Enhanced Solutions recently and proudly received a visit from Dr. Buzz Aldrin. It was just over 30 years ago that Apollo 11 landed on the
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R April 1999 tm FDS6961 A Dual N-Channel Logic Level MOSFET PowerTrench Features General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been
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FDS6961
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD SEM IC ONDUCTO R February 1999 tm FDS4953 MOSFET Dual P-Channel, Logic Level, PowerTrench General Description Features These P-Channel Logic Level M OSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored
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FDS4953
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Untitled
Abstract: No abstract text available
Text: SE M IC O N D U C T O R tm FDS5680 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel M O S FE T is produced using Fairchild Semiconductor's advanced PowerTrench process that has been e sp e cia lly tailored to m inim ize on-state
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FDS5680
tre795
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Untitled
Abstract: No abstract text available
Text: February 1999 FAIRCHILD S E M IC O N D U C T O R tm FDS69 75 MOSFET Dual P-Channel, Logic Level, PowerTrench General Description Features These P-Channel Logic Level M OSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored
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FDS69
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Motorola transistor smd marking codes
Abstract: 7900801CA lm6482a 5962-8993001MIA replacement for 11c90 TRANSISTOR SMD MARKING CODE QA LM311 SMD JM38510/10305BEA LM714h Motorola semiconductor smd marking codes
Text: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1998 Listing GIDEP Nr: GIDEP Category: Issued: 01/06/98 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description This P-Channel enhancement mode power field ef • -2.8 A, -20 V. RDS on = 0.14 « @ VQS = -4.5 V fect transistor is produced using Fairchild’s propri
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NDS9933A
DC/95
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Untitled
Abstract: No abstract text available
Text: ,V U .g July 1999 U M fc P A I R C H I L_D FDS6890A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified M OSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored
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FDS6890A
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Untitled
Abstract: No abstract text available
Text: April 1999 FAIRCHILD =Ml C O N D U C TO R tm FDS6630A N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level M OSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to m inimize on-state
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FDS6630A
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Untitled
Abstract: No abstract text available
Text: FEA TU R ES • 256 x 1 photosite array ■ ■ ■ ■ ■ ■ ■ 13pm * 17pm photosiles on 13pm pitch Dynam ic range typical: 7000:1 O n-chip video and com pensation amplifiers Low pow er requirements All operating voltages 15V and under Low noise equivalent exposure
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CCD111
256-element
CCD110F.
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C TO R PRELIMINARY tm FDS5680 Single N-Channel PowerTrench MOSFET G eneral D escription Features T h is N -C h a n n e l Lo g ic Level M O S F E T is p ro d u ce d using Fairchild S em iconductor's ad vanced P ow erTrench process th a t h a s be en e s p e c ia lly ta ilo re d to m in im iz e o n -s ta te
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FDS5680
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CLAY31
Abstract: van allen belt satellite pico electronics transformers airmate CLC452 F100K LM117 LM7171 10195 solar cell national semiconductor 400045
Text: VOLUME NO. 14 1998 Industry Migrates to Bare Die and Known Good Die – Virtual Packaging Known Good Die I t was just a few years ago that electronics designers who wanted the smallest form factor for system upgrades were limited to assorted surface-mount packages. More recently, this has
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FDB6690A
Abstract: amd athlon PIN LAYOUT Motorola MBRS130L FAN5093 FAN5193 MBRD835L MBRS130L R10-14
Text: www.fairchildsemi.com FAN5193 Two Phase Interleaved Synchronous Buck Converter Features Description • Programmable output from 1.10V to 1.85V in 25mV steps using an integrated 5-bit DAC • Two interleaved synchronous phases for maximum performance • 100nsec response time
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FAN5193
100nsec
200KHz
DS30005193
FDB6690A
amd athlon PIN LAYOUT
Motorola MBRS130L
FAN5093
FAN5193
MBRD835L
MBRS130L
R10-14
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capacitor 1000uF 16V
Abstract: 2N2222 capacitance capacitor 1uF 25V
Text: www.fairchildsemi.com FAN5093 Two Slice Interleaved Synchronous Buck Converter Features Description • Programmable output from 1.10V to 1.85V in 25mV steps using an integrated 5-bit DAC • Two interleaved synchronous slices for maximum performance • 100nsec response time
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FAN5093
100nsec
200KHz
DS30005093
capacitor 1000uF 16V
2N2222 capacitance
capacitor 1uF 25V
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FAN5093
Abstract: MBRD835L MBRS130L MMBD4148 R10-14 622k
Text: www.fairchildsemi.com FAN5093 Two Phase Interleaved Synchronous Buck Converter Features Description • Programmable output from 1.10V to 1.85V in 25mV steps using an integrated 5-bit DAC • Two interleaved synchronous phases for maximum performance • 100nsec response time
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FAN5093
100nsec
200KHz
DS30005093
FAN5093
MBRD835L
MBRS130L
MMBD4148
R10-14
622k
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