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    FAIRCHILD FIELD EFFECT TRANSISTOR Search Results

    FAIRCHILD FIELD EFFECT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    FAIRCHILD FIELD EFFECT TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NDS352AP

    Abstract: supersot-3
    Text: February 1997 FAIRCHILD Ml C O N D U C T O R i NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor Features G eneral D escription These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary,


    OCR Scan     		NDS352AP NDS352AP supersot-3 PDF

    PCTI

    Abstract: si8102 NDH8502P
    Text: FAIRCHILD Decem ber 1996 iM IC G N D U C T O R 1 NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,


    OCR Scan     		NDH8502P NDH8502P PCTI si8102 PDF

    NDP603AL

    Abstract: NDB603AL
    Text: FAIRCHILD SEMICDNDUCTOR January 1996 tm NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		NDP603AL NDB603AL NDB603AL PDF

    CBVK741B019

    Abstract: F63TNR F852 FDT439N PN2222A 63a30
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		FDT439N CBVK741B019 F63TNR F852 FDT439N PN2222A 63a30 PDF

    63a17

    Abstract: FDT439N SOT223
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		FDT439N 63a17 FDT439N SOT223 PDF

    NDS355N

    Abstract: No abstract text available
    Text: March 1996 FAIRCHILD MICDNDUCTDR t m NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		NDS355N PDF

    Untitled

    Abstract: No abstract text available
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		FDT439N PDF

    F852 transistor

    Abstract: No abstract text available
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		FDT439N F852 transistor PDF

    FDD603AL

    Abstract: No abstract text available
    Text: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		FDD603AL FDD603AL PDF

    FDD6030L

    Abstract: No abstract text available
    Text: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		FDD6030L FDD6030L PDF

    FDD6030L

    Abstract: CBVK741B019 F63TNR FDD6680
    Text: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		FDD6030L FDD6030L CBVK741B019 F63TNR FDD6680 PDF

    CBVK741B019

    Abstract: F63TNR FDD603AL FDD6680
    Text: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		FDD603AL CBVK741B019 F63TNR FDD603AL FDD6680 PDF

    FDD6030L

    Abstract: CBVK741B019 F63TNR FDD6680 FDD marking
    Text: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		FDD6030L FDD6030L CBVK741B019 F63TNR FDD6680 FDD marking PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R February 1997 tm NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		NDS352AP NDS352Ap PDF

    NDB6030PL

    Abstract: NDP6030PL 10v70
    Text: June 1 997 FAIRCHILD MICDNDUCTDR t m NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		NDP6030PL NDB6030PL 10v70 PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R February 1997 tm NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		NDS9410S NDS9410S PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R March 1996 tm NDP7050L / NDB7050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		NDP7050L NDB7050L PDF

    ARDV sot 23

    Abstract: DS332P
    Text: June 1997 FAIRCHILD M ICON DUCTOR tm NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan     		NDS332P ARDV sot 23 DS332P PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD February 1997 SEM ICONDUCTO R NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		NDS8410S PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD February 1996 SEM ICONDUCTO R NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 10A, 30V. R ^ , = 0.015Q @ VGS = 10V RDS ON| = 0.020n @ Vgs = 4.5V.


    OCR Scan     		NDS8410 NDSS41 PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1997 FAIRCHILD M ICONDUCTDR NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor G eneral Description Features These dual N - and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS


    OCR Scan     		NDH8321C 8321C PDF

    FDS9936A

    Abstract: SOIC-16 apad design
    Text: May 1998 FAIRCHILD IMICDNDUCTDR- FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		FDS9936A FDS9936A SOIC-16 apad design PDF

    zener diode 46a

    Abstract: NDB6030 NDP6030 46A9
    Text: July 1997 FAIRCHILD IMICDNDUCTDR- NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		NDP6030 NDB6030 NDP6030. zener diode 46a NDB6030 46A9 PDF

    zener diode t5

    Abstract: NDB4050 NDP4050
    Text: July 1996 FAIRCHILD MICDNDUCTDR i NDP4050 / NDB4050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    OCR Scan     		NDP4050 NDB4050 zener diode t5 NDB4050 PDF