fdb fairchild
Abstract: FDB86102 process of mosfet FDB86102LZ
Text: FDB86102LZ N-Channel PowerTrench MOSFET 100 V, 30 A, 24 mΩ Features General Description Max rDS on = 24 mΩ at VGS = 10 V, ID = 8.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and
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FDB86102LZ
FDB86102LZ
O-263AB
fdb fairchild
FDB86102
process of mosfet
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Untitled
Abstract: No abstract text available
Text: FDB86102LZ N-Channel PowerTrench MOSFET 100 V, 30 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and
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FDB86102LZ
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H11G2M
Abstract: No abstract text available
Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon
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H11G1M,
H11G2M,
H11G3M
H11GXM
H11G1M
H11G2M
E90700,
H11G2M
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MOC8050M
Abstract: MOC8021M MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM optocoupler no base connection fairchild optocoupler
Text: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a
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MOC8021M,
MOC8050M
MOC8021M
MOC8050M
MOC8021M)
MOC8050M)
E90700,
MOC8050SM
MOC8050SR2M
MOC8050SVM
MOC8050TM
MOC8050TVM
MOC8050VM
optocoupler no base connection
fairchild optocoupler
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H11AG1M
Abstract: CC 4093 N 1N4148 74HC14
Text: H11AG1M Phototransistor Optocoupler Features Description • High efficiency low degradation liquid epitaxial IRED The H11AG1M device consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device
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H11AG1M
H11AG1M
E90700,
CC 4093 N
1N4148
74HC14
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MOC119M
Abstract: MOC119SM MOC119SR2M MOC119TM fairchild optocoupler
Text: MOC119M Photodarlington Optocoupler No Base Connection Features Description • High current transfer ratio of 300% The MOC119M device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. ■ No base connection for improved noise immunity
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MOC119M
MOC119M
E90700
MOC119VM)
MOC119SM
MOC119SR2M
MOC119TM
fairchild optocoupler
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Untitled
Abstract: No abstract text available
Text: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a
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MOC8021M,
MOC8050M
MOC8021M
MOC8050M
MOC8021M)
MOC8050M)
E90700,
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Untitled
Abstract: No abstract text available
Text: H11N1M, H11N2M, H11N3M 6-Pin DIP High Speed Logic Optocouplers Features Description • High data rate, 5MHz typical NRZ The H11NXM series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode. The output incorporates a Schmitt trigger, which
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H11N1M,
H11N2M,
H11N3M
H11NXM
H11N3M
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H11AA4M
Abstract: H11AA2M H11AA1M H11AA1SM H11AA1SR2M H11AA1TM H11AA1VM H11AA3M H11AA1T H11AA1MS
Text: H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers Features Description • Bi-polar emitter input The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.
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H11AA1M,
H11AA2M,
H11AA3M,
H11AA4M
H11AAXM
E90700,
H11AA4M
H11AA2M
H11AA1M
H11AA1SM
H11AA1SR2M
H11AA1TM
H11AA1VM
H11AA3M
H11AA1T
H11AA1MS
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MOC304X
Abstract: MOC3043-M application notes inverse-parallel scr drive circuit Optocoupler with triac MOC3041-M application notes 3 kw triac how to interface optocoupler with triac MOC3032M MOC3033M MOC3042M
Text: MOC3031M, MOC3032M, MOC3033M, MOC3041M, MOC3042M, MOC3043M 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output 250/400 Volt Peak Features Description • Simplifies logic control of 115 VAC power The MOC303XM and MOC304XM devices consist of a AlGaAs infrared emitting diode optically coupled to a
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MOC3031M,
MOC3032M,
MOC3033M,
MOC3041M,
MOC3042M,
MOC3043M
MOC303XM
MOC304XM
MOC303XM,
MOC304X
MOC3043-M application notes
inverse-parallel scr drive circuit
Optocoupler with triac
MOC3041-M application notes
3 kw triac
how to interface optocoupler with triac
MOC3032M
MOC3033M
MOC3042M
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25E 106
Abstract: H11D1M
Text: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high
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4N38M,
H11D1M,
H11D2M,
H11D3M,
MOC8204M
H11DXM
MOC8204M
MOC8204M,
25E 106
H11D1M
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MCT2EM
Abstract: No abstract text available
Text: MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers Features Description • UL recognized File # E90700, Vol. 2 The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
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MCT210M,
MCT271M
E90700,
IEC60747-5-2
MCT271M
MCT2EM
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optocoupler mct2e
Abstract: IEC60747-5-2 MCT210M MCT271M ultra low voltage detector
Text: MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers Features Description • UL recognized File # E90700, Vol. 2 The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
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MCT210M,
MCT271M
E90700,
IEC60747-5-2
MCT271M
optocoupler mct2e
MCT210M
ultra low voltage detector
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TIL111M
Abstract: MOC8100M TIL111VM TIL117M TIL111SM TIL111SR2M TIL111SVM TIL111TM TIL111TVM
Text: TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers Features General Description • UL recognized File # E90700 The MOC8100M, TIL111M and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line
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TIL111M,
TIL117M,
MOC8100M
E90700)
MOC8100M,
TIL111M
TIL117M
TIL111VM)
MOC8100M
TIL111VM
TIL111SM
TIL111SR2M
TIL111SVM
TIL111TM
TIL111TVM
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CNY173M
Abstract: No abstract text available
Text: CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers Features Description • UL recognized File # E90700, Vol. 2 The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN
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CNY171M,
CNY172M,
CNY173M,
CNY174M,
CNY17F1M,
CNY17F2M,
CNY17F3M,
CNY17F4M,
MOC8106M,
MOC8107M
CNY173M
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scr c 107 d1
Abstract: MOC3042M 8 pin relay device 220 volt
Text: MOC3031M, MOC3032M, MOC3033M, MOC3041M, MOC3042M, MOC3043M 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output 250/400 Volt Peak Features Description • Simplifies logic control of 115 VAC power The MOC303XM and MOC304XM devices consist of a GaAs infrared emitting diode optically coupled to a
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MOC303XM,
MOC304XM
MOC3031M,
MOC3032M,
MOC3033M,
MOC3041M,
MOC3042M,
MOC3043M
MOC303XM
scr c 107 d1
MOC3042M
8 pin relay device 220 volt
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H11AG1M
Abstract: No abstract text available
Text: H11AG1M Phototransistor Optocoupler Features Description • High efficiency low degradation liquid epitaxial IRED The H11AG1M device consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device
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H11AG1M
H11AG1M
E90700
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H11N1
Abstract: H11N1M H11N1VM H11N2 H11N2M H11N3 H11N3M
Text: H11N1M, H11N2M, H11N3M 6-Pin DIP High Speed Logic Optocouplers Features Description • High data rate, 5MHz typical NRZ The H11NXM series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode. The output incorporates a Schmitt trigger, which
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H11N1M,
H11N2M,
H11N3M
H11NXM
H11N3M
H11N1
H11N1M
H11N1VM
H11N2
H11N2M
H11N3
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IEC60747-5-2
Abstract: MOC8111M MOC8111SM MOC8111SR2M MOC8111TM MOC8112M MOC8113M
Text: MOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications No Base Connection Features Description • High isolation voltage The MOC811XM series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for
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MOC8111M,
MOC8112M,
MOC8113M
MOC811XM
MOC8111M:
MOC8112M:
MOC8113M:
E90700,
IEC60747-5-2
MOC8111M
MOC8111SM
MOC8111SR2M
MOC8111TM
MOC8112M
MOC8113M
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datasheet 4n29 optocoupler
Abstract: til113 4N29M 4N30M 4N32M 4N32SM 4N32SR2M 4N33M H11B1M TIL113M
Text: 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
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4N29M,
4N30M,
4N32M,
4N33M,
H11B1M,
TIL113M
datasheet 4n29 optocoupler
til113
4N29M
4N30M
4N32M
4N32SM
4N32SR2M
4N33M
H11B1M
TIL113M
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1n813 fairchild
Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
Text: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei
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BR-BR-0034-58
1n813 fairchild
2N3303
abb inverter manual acs 800
FD6666 diode
2N3137
UA703 equivalent
FD200 diode
2N2369 AVALANCHE PULSE GENERATOR
UA716
Fairchild dtl catalog
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Germanium drift transistor
Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of
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orporation/464
CH-8105
Germanium drift transistor
2N4895
germanium transistor
epitaxial mesa
transistor sec tip31A
halbleiter index transistor
transistor BD222
BD699 EQUIVALENT
kd 2060 transistor
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sn76131
Abstract: sn76670 uA703 ua702 Fairchild dtl catalog ca3458 UA703 equivalent UA740 703HC lm741
Text: FAIRCHILD SEMICONDUCTOR THE LINEAR INTE INTRODUCTION NUMERICAL INDEX OPERATIONAL AMPLIFIERS COMPARATORS Each Product Sectio n Contains The Follow ing Categories O rganized By Function Index Selection Guide Data Sh e e ts G lo ssary VOLTAGE REGULATORS COMPUTER/INTERFACE
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-38510/M
S-11620
sn76131
sn76670
uA703
ua702
Fairchild dtl catalog
ca3458
UA703 equivalent
UA740
703HC
lm741
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TMC1175
Abstract: TMC1275 324Q
Text: FAIRCHILD www.fairchildsemi.com s e m i c o n d u c t o r tm TMC1 1 7 5A /T M C 1 275 V i d e o A/D C o n v e r t e r 8 bi t , 50 M s p s Features • 8-Bit resolution • 50 M sps conversion rate • Low power: lOOmW at 20 M sps • Integral track/hold • Integral and differential linearity error 0.5 LSB
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TMC1175A/1275
DS7001175A
TMC1175
TMC1275
324Q
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