FACON SEMICONDUCTOR Search Results

FACON SEMICONDUCTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPHR7404PU		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

FACON SEMICONDUCTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BH45-704A Abstract: BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230 Text: FACON 45E D • 345b503 OOOOOlù 5 « F C N FACON SEMICONDUCTEURS/SEMICONDUCTORS T-23-0\ m ouldings m ou lages Vr r m Types V V RMS re c o m m en d ed m ax (V) ■d on re sistive load s u r c h arg e résis tive d s m / fsm Ip per diode @ VR U se	OCR Scan	345b503 T-230\ CB-356 C8-350 345b2D3 CB-349 CB-350 BH45-704A BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230	PDF
facon bf 39933 Abstract: facon BA 204 115 Facon Bb 37 933 facon bh 39933 BD 39-931 Facon BH 37 933 bd 39933 FBH15 facon bd 39933 Facon bh 36931 Text: FACON 4SE D • 3M5b203 □□□□□Ob S FACON SEMICONDUCTEURS/SEMtCONDUCTORS ■ FCN ~T~2 3 ' 0 { single phase moulded bridges 0,8 Amp to 1,5 Amp ponts monophasés moulés 0,8 Amp à 1,5 Amp V RRM Typ es V r MS recom mended max id on re sistive load	OCR Scan	3M5b203 FBD08 FBH08 CB-198 CB-237 facon bf 39933 facon BA 204 115 Facon Bb 37 933 facon bh 39933 BD 39-931 Facon BH 37 933 bd 39933 FBH15 facon bd 39933 Facon bh 36931	PDF
facon diode Abstract: 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl Text: FACON 4SE D • 345b2G3 □□□□□IE 4 HIFCN FACON SEMICONDUCTEURS/SEMICONDUCTORS T-Z3-OI « pack 931» diode/thyristor 12 Amp modules diode/thyristor « pack 931 »12 Amp V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn n V RRM I r p e r leg	OCR Scan	345b2D3 T-23-0\ cb-200 741j37 cb-236 facon diode 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl	PDF
Facon BH 37 933 Abstract: facon bh 39933 BD 37 931 s Facon Bb 37 933 facon bh 37 741 BH 37 933 facon bd 39933 bb 36 931 bj 39933 BB36931 Text: FACON 4SE T> m 3MSbED3 ODDOGOb T B iF C N 2 3 -O FACON SEMICONDUCTEURS/SEMECONDUCTORS single phase moulded bridges 0,8 Amp to 1,5 Amp ponts m on op h asés m oulés 0,8 Amp à 1,5 Amp V RRM Typos <V V RMS rec o m m ended m ax >d on re s is tiv e lo a d	OCR Scan	3M5b203 FBD08 CB-198 CB-237 CB-200 Facon BH 37 933 facon bh 39933 BD 37 931 s Facon Bb 37 933 facon bh 37 741 BH 37 933 facon bd 39933 bb 36 931 bj 39933 BB36931	PDF
GF229-82 Abstract: 0 227 200 001 0 227 100 203 FBH13-501 Facon Semiconductor GB230-82 BB-228 facon facon diode CB-284 Text: FACON 4 SE T> m 3 M5 fc>203 OODOOl b 1 • FCN FACON SEMICONCHJCTEURS/SEMICONDUCTORS ~ T -2 3 ~ 0 \ moulded glass coating diode bridges p o n ts m o u lé s de d io d es à e n ro b a g e v e r r e •o U » fonction Typ«s V RRM TC = 5 5 * C A (V ) Vrms	OCR Scan	CB-453 CB-430 CB-279 CB-284 GF229-82 0 227 200 001 0 227 100 203 FBH13-501 Facon Semiconductor GB230-82 BB-228 facon facon diode CB-284	PDF
facon diode Abstract: facon CB-283 703 H 8 amp diode Facon Semiconducteurs CL20-600 3MSb2G3 CL44-703 Text: FACON 45E J> m 3MSb2G3 OOOODSM □ • FCN FACON SEMICONDUCTEURS/SEMICOPJEHJCTORS OI -o I mouldings m o u lag es VRRM Types V RMS re c o m m ended m ax V (V ) ■d on re s is tiv e lo a d s u r c h a rg e r é s is tiv e d s m / fsm I r p e r d io d e	OCR Scan	CB-352 CB-282 3MSb203 -32UMF CB-283 facon diode facon CB-283 703 H 8 amp diode Facon Semiconducteurs CL20-600 3MSb2G3 CL44-703	PDF
facon bh 27 701 Abstract: BA-20 diode bf 44 704 facon bf facon bh 27 BH 27 601A bl 44 704 facon BA 26 701 facon bf 27 701 facon diode Text: FACON 45E D 34SbS03 m □□□ □ □lñ 5 • FCN FACON SEMICONDUCTEURS/SEMICONDUCTORS T - 2 3 m ouldings m o u la g es V RRM Types V V RMS re c o m m ended m ax (V ) ■d on re s is tiv e lo a d s u r c h a rg e r é s is tiv e d s m / fsm If) p e r d io d e	OCR Scan	34SbS03 T-23-0\ CB-356 C8-350 34SL203 CB-350 facon bh 27 701 BA-20 diode bf 44 704 facon bf facon bh 27 BH 27 601A bl 44 704 facon BA 26 701 facon bf 27 701 facon diode	PDF
1001dl Abstract: IL 741 "by 236" diode CD 741 ci 741 DY40 facon df 741 facon diode CB39-931 CB37931 Text: FACON 4SE •■ 3M5L2G3 □□□□□12 4 ■ FCN d FACON SEMICONDUCTEURS/SEMICONDUCTOFtS T -2 3 -O Ì « p a c k 931 » d io d e /th y r is to r 12 A m p m o d u le s d io d e /th y ris to r « p a c k 931 »12 A m p VDRM or Types ■f s m / •t s m	OCR Scan	CB-200 CB-236 1001dl IL 741 "by 236" diode CD 741 ci 741 DY40 facon df 741 facon diode CB39-931 CB37931	PDF
cb346 Abstract: 1RM150 CB47 RECTIFIER Cb28 1N2911 facon F250HL RM2506 fmu 22 u mk plastique Text: LJ5E D FACON • 3MSb203 DDDG027 b « F C N FACONSEMICONDUCTEURS/SEMICONDUCTORS ~T [ - O\ high voltage power rectifiers d io d es haute tension d e fort n iveau d e courant V RRM V F/ 'F •f s m ■r / v r r m V BR R <rr C ase Types (A) (KV) 10 m s m ax	OCR Scan	34Sb203 34SbS03 CB-340 CB-341 CB-346 CB-347 CB-353 610C0 cb346 1RM150 CB47 RECTIFIER Cb28 1N2911 facon F250HL RM2506 fmu 22 u mk plastique	PDF
fmu 22 u Abstract: 100-k05 F300H KVL 005 EV12R CB346 F300HL facon Diodes de redressement st c832 Text: ! 45E D • 345b2D3 0DDDDE7 FAÇON SEMICONDUCTEURS/SEMICONDUCTORS b HFCN ~T~- Qi - O \| high voltage power rectifiers d io d e s haute te n sio n d e fort n iv e a u d e co u ran t 'r / v r r m V BR R t rr m ax <HA) m in (V) m ax (V) m ax <mA) 60 60 60 60	OCR Scan	34Sb2D3 75ted 34sbeq3 3MSbE03 CB-340 C8-341 CB-346 CB-347 CB-353 fmu 22 u 100-k05 F300H KVL 005 EV12R CB346 F300HL facon Diodes de redressement st c832	PDF