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    BTV58-600R

    Abstract: transistor BU 921 T DIODE 25PH 200 gate turn off thyristors 600R M1601 M1602 25ls gt
    Text: N ÂtTeR P H I L I P S / D I S C R E T E DkE D • fab53T31 O O l l ô 1^ I _ T m BTV58 SERIES _/ I s~ FAST GATE TURN-OFF THYRISTORS Thyristors in TO-220AB envelopes capable of being turned both on and off via the gate. Thev are


    OCR Scan     		PDF BTV58 T0-220AB BTV58â 1000R BTV58-600R transistor BU 921 T DIODE 25PH 200 gate turn off thyristors 600R M1601 M1602 25ls gt

    IEC134

    Abstract: LAE4002S
    Text: I-« N AMER P H IL IP S /D IS C R E T E OLE D • hbSBTBl 0014*107 T ■ LAE4002S MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter ciass-A linear power amplifiers up to 4 GHz. Diffused emitter . ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure


    OCR Scan     		PDF LAE4002S OT-100. L-13-â Zo-50n IEC134 LAE4002S