Untitled
Abstract: No abstract text available
Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard
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F49L320UA/F49L320BA
304x8
152x16
9s/11s
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Untitled
Abstract: No abstract text available
Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard
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F49L320UA/F49L320BA
304x8
152x16
9s/11s
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Untitled
Abstract: No abstract text available
Text: ESMT F49L160UA/F49L160BA 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES z z Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns z 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands
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F49L160UA/F49L160BA
152x8
576x16
9s/11s
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MX29LV160CBTC-90
Abstract: 29LV160C MX29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13
Text: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of
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MX29LV160C
16M-BIT
2Mx8/1Mx16]
100mA
Pac9/2006
MX29LV160CBTC-90
29LV160C
MX29LV160B
MX29LV160CT
SA10
SA11
SA12
SA13
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Intel Stacked CSP
Abstract: transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160
Text: 3 Volt Intel Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology
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28F1602C3,
28F1604C3,
28F3204C3,
28F3208C3
Intel Stacked CSP
transistor a018
28F1602C3
28F1604C3
28F3204C3
28F3208C3
29066
28f160
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MX29LV400
Abstract: mx29LV160cbtc-70g MX29LV800C MX29LV160C MX29LV160CBTI-70G mx29lv160d MX29LV800CBTC-90G MX29LV800CTTC-70 MX29LV160CTTC-70G
Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B MX29LV400C T/B, MX29LV800C T/B, MX29LV160C T/B DATASHEET The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the
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MX29LV400C
MX29LV800C
MX29LV160C
MX29LV160D
MX29LV400
mx29LV160cbtc-70g
MX29LV160CBTI-70G
MX29LV800CBTC-90G
MX29LV800CTTC-70
MX29LV160CTTC-70G
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D8000-DFFF
Abstract: No abstract text available
Text: M28W160BT M28W160BB 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = 2.7V to 3.6V: for Program, Erase and Read – VDDQ = 1.65V or 2.7V: Input/Output option – VPP = 12V: optional Supply Voltage for fast
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M28W160BT
M28W160BB
100ns
TSOP48
BGA46
A0-A19
D8000-DFFF
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Untitled
Abstract: No abstract text available
Text: F49L160UA/F49L160BA Operation Temperature condition -40 C~85 C 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 3.0V-3.6V Fast access time: 90 ns 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard
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F49L160UA/F49L160BA
152x8
576x16
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M36W216
Abstract: M36W216B M36W216T
Text: M36W216T M36W216B 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit (128K x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VDDF = 2.7V to 3.3V SRAM ■ 2 Mbit (128K x 16 bit) – VDDS = VDDQF = 2.7V to 3.3V ■
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M36W216T
M36W216B
100ns
M36W216T:
88CEh
M36W216B:
88CFh
M36W216
M36W216B
M36W216T
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M28W160B
Abstract: M28W160T 5250
Text: M28W160T M28W160B 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V: for Program, Erase and Read – VDDQ = 1.65V or 2.7V: Input/Output option – VPP = 12V: optional Supply Voltage for fast
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M28W160T
M28W160B
100ns
120ns
M28W160B
M28W160T
5250
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28F160C2
Abstract: 28F800C2 AP-657 TE28F160C2TA100
Text: E PRELIMINARY 2.4 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F800C2, 28F160C2 x16 n n n n n n Flexible SmartVoltage Technology 2.4 V–3.0 V Read/Program/Erase 12 V for Fast Production Programming High Performance 2.4 V–3.0 V: 100 ns Max Access
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28F800C2,
28F160C2
32-Kword
28F160C2
28F800C2
AP-657
TE28F160C2TA100
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28F008C3
Abstract: 28F016C3 28F032C3 28F160C3 28F320C3 28F800C3 sr5 diode
Text: E PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 n n n n n n Flexible SmartVoltage Technology 2.7 V–3.6 V Read/Program/Erase 2.7 V or 1.65 V I/O Option Reduces
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32-MBIT
28F008C3,
28F016C3,
28F032C3
28F800C3,
28F160C3,
28F320C3
64-KB
28F008C3
28F016C3
28F032C3
28F160C3
28F320C3
28F800C3
sr5 diode
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Untitled
Abstract: No abstract text available
Text: F49L160UA/F49L160BA 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands
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F49L160UA/F49L160BA
152x8
576x16
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Untitled
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR032KL70ZA6F
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Untitled
Abstract: No abstract text available
Text: M28W160CT M28W160CB 16 Mbit 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 2.7V for Input/Output – VPP = 12V for fast Program (optional) ■
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M28W160CT
M28W160CB
100ns
TFBGA46
TSOP48
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0001h31
Abstract: No abstract text available
Text: M28W160BT M28W160BB 16 Mbit 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 2.7V for Input/Output – VPP = 12V for fast Program (optional) ■
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M28W160BT
M28W160BB
100ns
BGA46
TFBGA46
0001h31
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Untitled
Abstract: No abstract text available
Text: M28W160CT M28W160CB 16 Mbit 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■
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M28W160CT
M28W160CB
100ns
TFBGA46
TSOP48
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Untitled
Abstract: No abstract text available
Text: MX29LV160T/B, MX29LV161T/B FEATURES 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B,
MX29LV161T/B
16M-BIT
2Mx8/1Mx16]
70/90ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
program01
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Untitled
Abstract: No abstract text available
Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
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MX29LV400C
MX29LV800C
MX29LV160C
MX29LV400C)
MX29LV800C)
MX29LV160C)
16K-Byte
32K-Byte
64K-Byte
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amd athlon II x2
Abstract: amd athlon II x2 270 amd athlon 64 socket 754 AMD Athlon 64 X2 AMD Athlon 64 X2 pin diagram AMD athlon socket 754 AMD Athlon II X4 pin diagram AMD Athlon 64 X2 AMD Athlon 64 AMD Athlon 64 pin diagram
Text: TM AMD Athlon Processor x86 Code Optimization Guide 2000 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with respect to the accuracy or completeness of the contents of
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22007H/0--June
amd athlon II x2
amd athlon II x2 270
amd athlon 64 socket 754
AMD Athlon 64 X2
AMD Athlon 64 X2 pin diagram
AMD athlon socket 754
AMD Athlon II X4
pin diagram AMD Athlon 64 X2
AMD Athlon 64
AMD Athlon 64 pin diagram
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mx29lv160dt
Abstract: No abstract text available
Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B MX29LV400C T/B, MX29LV800C T/B, MX29LV160C T/B DATASHEET The MX29LV160C T/B product will be phase-out, and is not recommended for new design. The MX29LV160C T/B will be migrated to MX29LV160D T/B, which is a functional compatible product. Please refer to MX29LV160D T/B datasheet
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MX29LV400C
MX29LV800C
MX29LV160C
MX29LV160D
mx29lv160dt
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29LV160T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV160T/B
16M-BIT
2Mx8/1Mx16]
70/90ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
addresJAN/16/2001
JAN/30/2001
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M58WR064K
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR064K
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29064
Abstract: No abstract text available
Text: in te l PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F800C3, 28F160C3, 28F320C3 x16 • ■ Improved 12 V Production Programming — Faster Production Programming — No Additional System Logic ■ 128-bit Protection Register — 64-bit Unique Device Identifier
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28F800C3,
28F160C3,
28F320C3
64-KB
Consump001
28F160C3
29064
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