48 Lead Ceramic Quad Flatpack
Abstract: CERAMIC FLATPACK MIL-STD-1835 F70 Package
Text: Package Diagram Ceramic Flatpacks 16-Lead Rectangular Flatpack F69 MIL-STD-1835 F-5 Config. B 18–Lead Rectangular Flatpack F70 1 Package Diagram 24-Lead Rectangular Flatpack F73 MIL-STD-1835 F- 6 Config. B 32-Lead Rectangular Flatpack F75 2 Package Diagram
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16-Lead
MIL-STD-1835
24-Lead
32-Lead
42-Lead
48-Lead
64-Lead
STD-1835
48 Lead Ceramic Quad Flatpack
CERAMIC FLATPACK
F70 Package
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7A200V
Abstract: No abstract text available
Text: QFET !
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55B/5)
FQD630TF
O-252
FQD630TM
7A200V
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Untitled
Abstract: No abstract text available
Text: QFET !
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55B/5)
FQU630TU
O-251
FQU630
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PDF
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EMCO F40
Abstract: 12v center tap transformer 12v output center tap transformer 12v 500ma center tap transformer 4722a f10r Outgass F60 emco input and output center tap transformer Ignition Transformer
Text: Compact, 10 Watt, High Voltage Modules 0 to + or - 100 through 0 to + or - 12,000 VDC @ 10 Watts F Series The F Series is a broad line of versatile, robust, DC to HV DC converters providing 100 VDC to 12,000 VDC positive or negative polarity at 10 Watts continuous
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Input/Output43)
EMCO F40
12v center tap transformer
12v output center tap transformer
12v 500ma center tap transformer
4722a
f10r
Outgass
F60 emco
input and output center tap transformer
Ignition Transformer
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PDF
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u1540
Abstract: scl100 TO61 package PD789477 uPD789478 uPD789479 uPD78F9478 uPD78F9479 UPD789477GC-8BT
Text: User’s Manual µPD789478 Subseries 8-Bit Single-Chip Microcontrollers µPD789477 µPD789478 µPD789479 µPD78F9478 µPD78F9479 Document No. U15400EJ3V0UD00 3rd edition Date Published May 2003 N CP(K) Printed in Japan 2001 [MEMO] 2 User’s Manual U15400EJ3V0UD
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PD789478
PD789477
PD789478
PD789479
PD78F9478
PD78F9479
U15400EJ3V0UD00
U15400EJ3V0UD
KRM01)
PD789479,
u1540
scl100
TO61 package
PD789477
uPD789478
uPD789479
uPD78F9478
uPD78F9479
UPD789477GC-8BT
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PDF
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MSM51V17805
Abstract: MSM51V17805F
Text: FEDD51V17805F-02 Issue Date: Aug. 16, 2002 OKI Semiconductor MSM51V17805F 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17805F is a 2,097,152-word × 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V17805F achieves high integration, high-speed operation, and
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FEDD51V17805F-02
MSM51V17805F
152-Word
MSM51V17805F
28-pin
cycles/32ms
MSM51V17805
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MSM51V17805F
Abstract: No abstract text available
Text: FEDD51V17805F-01 1Semiconductor MSM51V17805F This version: November. 2000 Previous version : 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17805F is a 2,097,152-word × 8-bit dynamic RAM fabricated in Oki’s silicon-gate
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FEDD51V17805F-01
MSM51V17805F
152-Word
MSM51V17805F
28-pin
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MSM5117805F
Abstract: MSM5117805
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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Untitled
Abstract: No abstract text available
Text: FEDD5116405F-03 Issue Date: Jul. 19, 2005 OKI Semiconductor MSM5116405F 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116405F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V16405F achieves high integration, high-speed operation, and low-power
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FEDD5116405F-03
MSM5116405F
304-Word
MSM5116405F
MSM51V16405F
26/24-pin
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PDF
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MSM51V17805F
Abstract: MSM51V17805
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM51V17405F
Abstract: CA10 MSM51V17405
Text: FEDD51V17405F-02 1Semiconductor MSM51V17405F This version: Nov. 2000 Previous version : Aug. 2000 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17405F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate
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FEDD51V17405F-02
MSM51V17405F
304-Word
MSM51V17405F
26/24-pin
CA10
MSM51V17405
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PDF
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MSM5117405F
Abstract: CA10 MSM5117405
Text: FEDD5117405F-02 1Semiconductor MSM5117405F This version: Nov. 2000 Previous version : Aug. 2000 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
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FEDD5117405F-02
MSM5117405F
304-Word
MSM5117405F
26/24-pin
CA10
MSM5117405
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PDF
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MSM51V17805F
Abstract: MSM51V17805
Text: PEDD51V17805F-01 1Semiconductor MSM51V17805F This version: May. 2000 Previous version : Preliminary 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17805F is a 2,097,152-word × 8-bit dynamic RAM fabricated in Oki’s silicon-gate
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PEDD51V17805F-01
MSM51V17805F
152-Word
MSM51V17805F
28-pin
MSM51V17805
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PDF
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CA10
Abstract: MSM51V17405 MSM51V17405F
Text: FEDD51V17405F-01 1Semiconductor MSM51V17405F This version: June. 2000 Previous version : 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17405F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate
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FEDD51V17405F-01
MSM51V17405F
304-Word
MSM51V17405F
26/24-pin
CA10
MSM51V17405
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MSM51V16405F
Abstract: MSM51V16405
Text: FEDD51V16405F-02 Issue Date: Aug. 16, 2002 OKI Semiconductor MSM51V16405F 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16405F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V16405F achieves high integration, high-speed operation, and
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FEDD51V16405F-02
MSM51V16405F
304-Word
MSM51V16405F
26/24-pin
cycles/64ms
MSM51V16405
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PDF
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MSM5117405F
Abstract: CA10 MSM5117405
Text: FEDD5117405F-01 1Semiconductor MSM5117405F This version: June. 2000 Previous version : 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
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Original
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FEDD5117405F-01
MSM5117405F
304-Word
MSM5117405F
26/24-pin
CA10
MSM5117405
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PDF
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Untitled
Abstract: No abstract text available
Text: PEDD5117405F-01 1Semiconductor MSM5117405F This version: May. 2000 Previous version : Preliminary 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
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Original
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PEDD5117405F-01
MSM5117405F
304-Word
MSM5117405F
26/24-pin
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f75b
Abstract: F75-B-M A41670 4622B F73-5-M F73-7-M F74-5-M F74-7-M F76-6-M F76-8-M
Text: PART NO F73-5-M F73-7-M F74-5-M F74-7-M F75-6-M F75-0-M F75-10-M F76-6-M F7B-0-M F76-10-M F76-12-M F77-6-M F77-7-M F77-0-M F77-10-M F77-12-M F7B-7-M F70-0-M F70-10-M F70-12-M F70-15-M F70-18-M F70-2O-M WIRE STRIP RANGE LENGTH AWG mm* •?/» '>0,791 7/32
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F73-5-M
F73-7-M
F74-5-M
F74-7-M
F75-6-M
CT-1002
CT-1003
F75-B-M
F75-10-M
F76-6-M
f75b
F75-B-M
A41670
4622B
F73-7-M
F74-7-M
F76-8-M
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PDF
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Untitled
Abstract: No abstract text available
Text: ER2055 ER2055IR ER2055HR 512 Bit Electrically Alterable Read Only Memory FEATU RES ELEC. ALTERABLE NON VOLATILE M EM O R Y • 64 word x 8 bit organization ■ 6 bit binary addressing ■ +5, —28V power supplies ■ Word Alterable ■ 10 year data storage for ER2055 at -f70°C
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OCR Scan
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ER2055
ER2055IR
ER2055HR
ER2055
ER2055)
100ms
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PDF
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Untitled
Abstract: No abstract text available
Text: CITIZEN VOLTAGE CONTROLLED CRYSTAL OSCILLATORS [SMD • Ceramic Package CSX-750V SERIES 2000pcs/reel •FEATURES • A vailable to supply voltage 5.0V or 3.3V. • A utom atic m ounting and reflowable type. • M ost appropriate for com m unication devices and
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OCR Scan
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CSX-750V
2000pcs/reel
50ppm
100ppm
15kHz
20dBc/Hz
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PDF
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EB-1200
Abstract: EB-3110 EB-1111 IC EB 5 EB-3200 EB141
Text: E-SAN ELECTRONIC CO LTD D sme • 3D37MD2 □□□□□□? 2 ■ ~ / _^ 5 r7^ D C /D C Converter EB Series Features: • 24 Pin IC package • PCB mountable • Economy non-regulated & high stability regulated types available • Thermally conductive encapsulant
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OCR Scan
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3D37MDS
EB-1200
250mA
EB-3200
EB-1110
100mA
EB-3110
EB-1111
IC EB 5
EB141
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PDF
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EL7L
Abstract: No abstract text available
Text: KODENSHI CORP EL-7LM\ 25E D • 5242^05 D0QQ2DS T 91 DIMENSIONS K $ tifc * W * G a A s # ^ %%¥*< # — K X-to 'I'MXlUftftLftM < Unit: mm 4 'T T l'it , The EL-7L is a high power GaAs IRED mounted in a clear plastic package. With lensed package, this small device
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OCR Scan
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5H42b0a
EL7L
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SE D KODENSHI CORP- A L-IFI • S242bDfl 0000211 S ■ DIMENSIONS K$ Unit: mm K T '- f o <x ^ ^ I S it A ^ T - r o The AL-1F1 is a high-power GaAM s IRED mounted in a clear plastic package, whose low profile permits very accurate centering of light source. Designed for automatic
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S242bDfl
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PDF
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Untitled
Abstract: No abstract text available
Text: p October 1996 Edition 2.0 Z DATASHEET CE61 SERIES 0.35 MICRON HIGH PERFORMANCE/LOW POWER CMOS EMBEDDED ARRA YS CE61 SERIES PRODUCT SUMMARY DESCRIPTION The Fujitsu CE61 is a series of high performance CMOS embedded arrays featuring full support of diffused high-speed
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74175b
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PDF
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