Untitled
Abstract: No abstract text available
Text: DMA26402 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: F7 Basic Part Number
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DMA26402
UL-94
DRA2124E
DMA264020R
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CIMRF7Z4011
Abstract: No abstract text available
Text: Y203-EN2-01.book Seite 253 Montag, 29. März 2004 12:52 12 CIMR-F7Z Varispeed F7 Frequency inverter for full flux vector control Current Vector Control with or without PG Torque Control PID Control Standard LCD operator Fieldbus options: DeviceNet, Profibus, CANOpen
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Y203-EN2-01
RS485
110KW
I23E-EN-01
CIMRF7Z4011
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PDF
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CIMR-F7Z40151
Abstract: No abstract text available
Text: Y203-EN2-02-Katalog.book Seite 269 Mittwoch, 24. Mai 2006 2:22 14 CIMR-F7Z Varispeed F7 The industrial workhorse • • • • • • • • • • • Flux vector control with or without PG Silent operation. No current de-rating in silent mode. Torque control
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Y203-EN2-02-Katalog
RS485
I23E-EN-02
CIMR-F7Z40151
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PDF
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7H diode
Abstract: IPA50R140CP DIODE marking ED X9 diode marking BEM LM7m
Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W 4 EHB: M ?: ; 8;IJ/ =L"a`# ?D 1, W EM ;IJ<?=KH; E<C ;H?J/ , + N . Y V !0 8M\_Sj .) O R =L"a`#%_Sj )'*-) " -1 `< Q Y%fkb W 2 BJH7 BEM =7J ; 9>7H=; W " NJH;C ; : L : JH7J;: W % ?=> F;7A 9KHH;DJ97F78?B?JO
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IPA50R140CP
799EH
7H diode
IPA50R140CP
DIODE marking ED X9
diode marking BEM
LM7m
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PDF
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DFJI
Abstract: JG marking diode EZD transistor 7g
Text: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9
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IPD50R399CP
/L-33J
DFJI
JG marking
diode EZD
transistor 7g
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PDF
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diode EZD
Abstract: diode AY 101
Text: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V*EL;HI<?=JG;E<C;G?I0-,M/Y V3BIG7BEL=7I;9>7G=; V"19N\_Si //* P R>M#a`$&_Si * -33 +1 `= QY&ejb V#MIG;C;:K :IG7I;: V&?=>F;7A9JGG;DI97F78?B?IN
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IPD50R399CP
97F78
799EG:
/L-33J
diode EZD
diode AY 101
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PDF
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h7d marking
Abstract: No abstract text available
Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W4EHB:M?:;8;IJ/ =L"a`#?D1, W EM;IJ<?=KH;E<C;H?J/,+N.Y V !08M\_Sj .) O R =L"a`#%_Sj )'*-) -1 `< Q Y%fkb W2BJH7BEM=7J;9>7H=; W"NJH;C;:L :JH7J;:
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Original
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IPA50R140CP
97F78
799EH:
h7d marking
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PDF
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JG Diode
Abstract: diode EZD jg transistor T1027 f7 transistor MARKING 7C DIODE marking 7b PG-TO252-3 transistor 7g
Text: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V *EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * /,* " +- `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9
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IPD50R520CP
JG Diode
diode EZD
jg transistor
T1027
f7 transistor
MARKING 7C
DIODE marking 7b
PG-TO252-3
transistor 7g
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PDF
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diode AY 101
Abstract: IPD50R520CP
Text: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V*EL;HI<?=JG;E<C;G?I0IHM/Y V3BIG7BEL=7I;9>7G=; V"19N\_Si //* P R>M#a`$&_Si * /,* +- `= QY&ejb V#MIG;C;:K :IG7I;: V&?=>F;7A9JGG;DI97F78?B?IN
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Original
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IPD50R520CP
97F78
799EG:
87BB7HI
diode AY 101
IPD50R520CP
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PDF
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Untitled
Abstract: No abstract text available
Text: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9
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IPD50R399CP
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PDF
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TLN103
Abstract: TLN108 TPS605LB
Text: Photo Transistor - F7 Transistor Type Classification Type N a Package S TPS601A TPS604 Metal To-18 TPS614 05 D O O O Electro-optical Characteristics Ta=25“C MIN (MA) 100 SK o TPS610 7 (dge) V ce MAX (V) Vistole Light
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OCR Scan
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TPS601A
TPS604
To-18
TPS614
TLN101A
TLN102
TLN108
TLN201
TPS610
TPS611
TLN103
TLN108
TPS605LB
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PDF
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TLP121-4
Abstract: tlp120 smd TLP112A
Text: Mini Flat Photocouplers SMD Photocouplers Transistor Output_ F7 Collector Breakdown Votage V(BR)CEO(V) Current Transfer Ratio Type No. Pin Configuration Features TLP121 4 ch Type TLP120 AC input £ TLP120-4 GB BV (mA) (V) 80 100 600 100 1200 200
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OCR Scan
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TLP121
TLP121-4
TLP124
TLP124-4
TLP120
TLP120-4
TLP126
TLP621
TLP621-4
TLP624
tlp120 smd
TLP112A
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PDF
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TLRA280
Abstract: TLP1007A TLRC280
Text: Photo interrupters P hoto IC O utput F7 Electro-optical Characteristics (Ta=25°C) Classification Photo IC Output Type No. Output Level (With Light) TLP1000A “H” TLP1001A “L" TLP1002A “H” TLP1003A “L” TLP1004A “H” TLP1005A “L” TLP1006A
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OCR Scan
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TLP1000A
TLP1001A
TLP1002A
TLP1003A
TLP1004A
TLP1005A
TLP1006A
TLP1007A
TLP1014
TLP1015
TLRA280
TLRC280
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PDF
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TLP850
Abstract: TLP1240 TLP852 TLP851 TLP807 TLP809 TLP8 TLP1225 TLP1230
Text: F7 Electro-optical Characteristics Ta-25*C Classification Photo Darlington Transistor Output VCE MAX (V) lo MAX (nA) 250 Typ« No. Gap (mm) Slit Width (mm) lF(mA) V ce(V) TLP507A 3 1 30 10 2 30 TLP850 5 1 40 10 2 30 250 TLP851 5 0.5 20 10 2 30 250 MIN TLP852
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OCR Scan
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Ta-25
TLP507A
TLP850
TLP851
TLP852
TLP853
TLP862
TLP863
TLP864
TLP865
TLP1240
TLP807
TLP809
TLP8
TLP1225
TLP1230
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PDF
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DTC114WS
Abstract: No abstract text available
Text: DTC114WU/DTC114WK/DTC114WS/DTC114WF DTC114WL/DTC114WA/DTC114WV Is ~7 > v 7. $ / T ransistors DTC114W U /D TC 114W K /D TC 114WS D TC 114W F/D TC 114W L/D TC 114WA DTC114W V ^-/Transistor Switch Digital Transistors Includes Resistors • f7 • $\-MT f& H /D im e n s io n s (Unit : mm)
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OCR Scan
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DTC114WU/DTC114WK/DTC114WS/DTC114WF
DTC114WL/DTC114WA/DTC114WV
DTC114W
114WS
114WA
DTC114WS
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PDF
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2SA675
Abstract: t430 transistor t430 T591 PA33 ss-3r
Text: SEC j Iïf/\f7 J '> y = ]> h Silicon Transistor 2SA675 P N P X f c f v T J U J K v U =i > h -7 > v * £ Si PNP Silicon Epitaxial Transistor Fluorescent Indicator Pannel Driver 2 SA 675 i, tîIIÊ fli: £ f i f z sE — Jl' F h ? ^121/PACKAGE DIMENSIONS T% Ë E ^ 'iS î ^ £
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OCR Scan
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2SA675
2SA675
t430 transistor
t430
T591
PA33
ss-3r
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PDF
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Untitled
Abstract: No abstract text available
Text: In r Com I¡near Corporation 000674 i 0 f7 ? /tC £ o . Fast Settling, Wideband High Voltage Op Amps CLC210AI, CLC210AM MIL-STD-883B APPLICATIONS: FEATURES: • • • • • ± 3 0 V ou tp u t drive capability • -3 d B bandw idth of 50MHz precision, high speed D to A conversion
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OCR Scan
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50MHz
500V//US
CLC210AI,
CLC210AM
MIL-STD-883B)
CLC210
60Vppfrom
CLC200-1.
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PDF
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RCA-CDP1873C
Abstract: No abstract text available
Text: C M O S Peripherals .403 Advance Information/ Preliminary Data CDP1873C TERMINAL ASSIGNMENT CMOS 1 of 8 Binary Decoder vss — "1 2 3 4 5 6 7 6 s-J 16 15 14 13 12 II 10 9 1 — — — — — — — — — — — — — — s > AO Ai A2 F7 E2 E3 OUT 7
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OCR Scan
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CDP1873C
RCA-CDP1873C
CDP187a
CDP1873C
CDP1874C
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PDF
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sa0565
Abstract: BAIF4M BA1F4M
Text: r IV E C ^?T/\f7 ir S * S'—b a-g-h^ Compound Transistor BA1 F4M i£StrtlNPNxti?*'>7rJU •' m m ★ o T x iS f it £ L T ^ £ -to 4.0 ±0.2 6” R i = 22 k fi, R 2= 22 k f i ) 2 6’ -0.50 O B N 1 F 4 M £ =7 > 7 °'J / > ? U « ^ i # ( T a = n 25 °C )
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OCR Scan
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PDF
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bTI51
Abstract: fsjc F4CJ 2SJ209 TF230
Text: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-
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OCR Scan
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2SJ209
IEI-620)
bTI51
fsjc
F4CJ
2SJ209
TF230
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PDF
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2SK1132
Abstract: TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B
Text: MO M O S Field Effect Transistor MOS F E T 2SJ165 {i P • mm F E T T & 9, Ü X >f -y f - > ^ " r 'X ^ f X h L T H i t T - t c # tc , ± 0 :2 J V T R ^ ^ - f 'V F7 > y X ^ => 6‘ • x - i17 f £ - H i â ' C i '0 4-*•■■ < £> & o m 0.42 z s o & A ti4
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OCR Scan
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2SJ165
2SK1132
TRANSISTOR DG S-10
ifr 641
2SJ165
TC-7517B
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PDF
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JT MARKING
Abstract: X108 a3JE 0834 JE 720 transistor HJK MARKING
Text: 7 s— S • 5/— K Compound Transistor F A IF4N rt/itN P N i fc“? * :>T «F 'J 3 V F7 v i* ;* ? Ì2HI W Ì • mm » o xN'^f r XÌÈÌTL £ 1*1/1 t X ^ £ -to 2 .8 + 0 .2 (R i = 22 kQ, R2= 47 kQ) 0 .6 5 ig ;ls 1 .5 C J _ o FN1F4N ¿; n > 7° U / > ? ij T ig ffl
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OCR Scan
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PWS10
-55II
JT MARKING
X108
a3JE
0834
JE 720 transistor
HJK MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: h 7 > y ^ $ / T ransistors g 2 Q 1 2 2 8 M e 1 ^ u N P N ^ 1 3 > h ^ > 7 * rfjiE S /D im e n sio n s Unit : mm t t * 1) VCE ( sa. is ^ 7 Epitaxial Planar NPN Silicon Transistor Power Amp. Z S D Io O O • 2SD1228M/2SD1860 X -f7 f iz'iM b X o 9 0 m V (T y p .) ( I c = 1 5 0 m A l B = 1 5 m A )
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OCR Scan
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2SD1228M/2SD1860
150mV
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PDF
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CLC210AM
Abstract: CLC210AI CLC200
Text: In r Com I¡near Corporation £ ~ f2 3 /g Ç > 000674 i W s 0<f7Ÿ/t£€o . Fast Settling, Wideband High Voltage Op Amps CLC210AI, CLC210AM MIL-STD-883B APPLICATIONS: FEATURES: • p re c isio n , high sp e e d D to A con version • g ra p h ic C R T c o m p o s ite video d rive a m p
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OCR Scan
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CLC210AI,
CLC210AM
MIL-STD-883B)
50MHz
500V//US
CLC210
60Vppfrom
CLC200-1.
CLC210AM
CLC210AI
CLC200
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PDF
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