corrugated box spec
Abstract: T0030 CBVK741B019 Fairchild taping F63TNR F63TNR 3.2
Text: DO-15 Tape and Reel Data DO-15 Packaging Configuration: Figure 1.0 F63TNR/Human Readable Label Corrugated Outer liner DO-15 TNR Intermediate Container Options White Anode Red/Blue (Cathode) Kraft Paper wounded between layers F63TNR Label sample DO-15 Packaging
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DO-15
F63TNR/Human
F63TNR
340mm
410mm
CBVK741B019
corrugated box spec
T0030
CBVK741B019
Fairchild taping
F63TNR 3.2
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Untitled
Abstract: No abstract text available
Text: DO-41 Plastic Tape and Reel Data DO-41 (Plastic) Packaging Configuration: Figure 1.0 F63TNR/Human Readable Label DO-41 (Plastic) TNR Intermediate Container Options Corrugated Outer liner White (Anode) Red/Blue (Cathode) Kraft Paper wounded between layers
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DO-41
F63TNR/Human
340mm
F63TNR
CBVK741B019
1N4741A
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T0030
Abstract: DO-201AD F63TNR
Text: DO-201AD/AE Tape and Reel Data DO-201AD/AE Packaging Configuration: Figure 1.0 F63TNR or Human Readable Label DO-201AD/AE TNR Intermediate Container Options Corrugated Outer liner White Anode Red/Blue (Cathode) Kraft Paper wounded between layers 340mm x 340mm x 410mm
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DO-201AD/AE
F63TNR
340mm
410mm
CBVK741B019
T0030
DO-201AD
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f 948
Abstract: TOP 948 f948
Text: FC-36A 5.5 x 5 mm MOSFET BGA Tape and Reel Dimensions FC-36A MOSFET BGA Packaging Configuration: Figure 1 F63TNR Label Packaging Description: Antistatic Cover Tape FC-36A MOSFET BGA parts are shipped in tape. The carrier tape is made from a dissipative carbon filled
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FC-36A
F63TNR
330cm
f 948
TOP 948
f948
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AT 30B
Abstract: FC-30B 942b F942B
Text: FC-30B 3.5 x 4 mm MOSFET BGA Tape and Reel Dimensions FC-30B MOSFET BGA Packaging Configuration: Figure 1 F63TNR Label Packaging Description: FC-30B MOSFET BGA parts are shipped in tape. The carrier tape if made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film
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FC-30B
F63TNR
330cm
AT 30B
942b
F942B
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CBVK741B019
Abstract: F63TNR FDG6302P FFB3904 FFB3906 FFB3946 FMB3946 SC70-6 318 SC70-6
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AB FFB3946 / FMB3946 FMB3946 FFB3946 B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .002 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is designed for use as a general purpose
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SC70-6
FFB3946
FMB3946
FFB3946
FFB3904
FFB3906
CBVK741B019
F63TNR
FDG6302P
FFB3904
FFB3906
FMB3946
SC70-6
318 SC70-6
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SSOT-6
Abstract: F63TNR CBVK741B019 FDC633N EIA-481 standar
Text: SuperSOTTM-6 Tape and Reel Data SSOT-6 Packaging Configuration: Figur e 1.0 Packaging Description: Customize Label SSOT-6 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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177cm
330cm
SSOT-6
F63TNR
CBVK741B019
FDC633N
EIA-481 standar
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FFB3904
Abstract: 1N916 CBVK741B019 F63TNR FMB3904 MMPQ3904 SC70-6 SOIC-16
Text: E2 MMPQ3904 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .1A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.
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MMPQ3904
SC70-6
SOIC-16
FFB3904
FMB3904
FMB3904
FFB3904
1N916
CBVK741B019
F63TNR
MMPQ3904
SC70-6
SOIC-16
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SC70-6 SSOT6
Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and
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SC70-6
FFB2227A
FMB2227A
FFB2227A
FFB2222A
FFB2907A
SC70-6 SSOT6
SSOT-6
.318 SC70-6
ic 311 pdf datasheets
CBVK741B019
F63TNR
FDG6302P
FFB2222A
FFB2907A
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CBVK741B019
Abstract: F63TNR FDG6302P FFB3906 FMB3906 MMPQ3906 SC70-6 SOIC-16 4977 gm
Text: E2 MMPQ3906 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.
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MMPQ3906
SC70-6
SOIC-16
FFB3906
FMB3906
FMB3906
FFB3906
CBVK741B019
F63TNR
FDG6302P
MMPQ3906
SC70-6
SOIC-16
4977 gm
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F63TNR
Abstract: FFB2907A FMB2907A MMPQ2907A SC70-6 SOIC-16 TE ssot-6
Text: E2 MMPQ2907A C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2F B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 SuperSOT-6 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the
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MMPQ2907A
SC70-6
SOIC-16
FFB2907A
FMB2907A
FMB2907A
FFB2907A
F63TNR
MMPQ2907A
SC70-6
SOIC-16
TE ssot-6
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SSOT-6
Abstract: F63TNR CBVK741B019 FDC633N
Text: SuperSOTTM-6 Tape and Reel Data and Package Dimensions SSOT-6 Packaging Configuration: Figur e 1.0 Packaging Description: Customize Label SSOT-6 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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177cm
330cm
SSOT-6
F63TNR
CBVK741B019
FDC633N
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SSOT-6
Abstract: F63TNR SSOT6
Text: SSOT-6 Packaging Configuration: Figur e 1.0 Packaging Description: Customize Label SSOT-6 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film,
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177cm
330cm
SSOT-6
F63TNR
SSOT6
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F63TNR
Abstract: 2502P CBHK741B019 FDW2502P 32TSSOP F63TNR 3.2
Text: TSSOP 8lds Tape and Reel Data TSSOP(8lds) Packaging Configuration: Figure 1.0 ATTENTION OBSERVEPRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES Embossed ESD Marking Packaging Description: TION S ATTEEPNRECAUTION G RV HANDLIN OBSEFO R TATIC TROSITI
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13component
F63TNR
2502P
CBHK741B019
FDW2502P
32TSSOP
F63TNR 3.2
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Untitled
Abstract: No abstract text available
Text: FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.2 A, 200 V. RDS ON = 0.120 Ω @ VGS = 10 V
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FDS2670
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948D
Abstract: FC-09A
Text: FC-09A 2 x 2 mm MOSFET BGA Tape and Reel Dimensions FC-09A MOSFET BGA Packaging Configuration: Figure 1 Packaging Description: FC-09A MOSFET BGA parts are shipped in tape and reel. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film
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FC-09A
177cm
948D
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948d
Abstract: No abstract text available
Text: FC-12A 2 x 2.5 mm MOSFET BGA Tape and Reel Dimensions FC-12A MOSFET BGA Packaging Configuration: Figure 1 Packaging Description: FC-12A MOSFET BGA parts are shipped in tape and reel. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film
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FC-12A
177cm
948d
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SSOT-6
Abstract: FDC602P CBVK741B019 F63TNR FDC633N
Text: FDC602P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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FDC602P
SSOT-6
FDC602P
CBVK741B019
F63TNR
FDC633N
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ssot-6
Abstract: d 331 TRANSISTOR EIA rs 481 100C CBVK741B019 F63TNR FDC633N FMBS549 SSOT6
Text: FMBS549 FMBS549 NC C E Package: SuperSOT-6 single Mark : .S1 B C C Pin 1 PNP Low Saturation Transistor ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. Sourced from process PB. Absolute Maximum Ratings*
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FMBS549
ssot-6
d 331 TRANSISTOR
EIA rs 481
100C
CBVK741B019
F63TNR
FDC633N
FMBS549
SSOT6
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F63TNR
Abstract: FDC6329L FDC633N SOIC-16 CBVK741B019
Text: November 1998 FDC6329L Integrated Load Switch General Description Features VDROP=0.2V @ VIN=5V, IL=2.8A. R ON = 0.07Ω VDROP=0.2V @ VIN=2.5V, IL=1.9A. R(ON) = 0.105Ω. This device is particularly suited for compact power management in portable electronic equipment where
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FDC6329L
F63TNR
FDC6329L
FDC633N
SOIC-16
CBVK741B019
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ssot-6
Abstract: marking 310
Text: FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low
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FDC6310P
ssot-6
marking 310
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2502P
Abstract: 2503N CBHK741B019 F63TNR FDW2502P FDW2503N
Text: FDW2503N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2503N
2502P
2503N
CBHK741B019
F63TNR
FDW2502P
FDW2503N
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SSOT-6
Abstract: CBVK741B019 F63TNR FDC6330L FDC633N 2180r
Text: FDC6330L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power
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FDC6330L
SSOT-6
CBVK741B019
F63TNR
FDC6330L
FDC633N
2180r
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948c
Abstract: No abstract text available
Text: FC-18A 2.5 x 4 mm MOSFET BGA Tape and Reel Dimensions FC-18A MOSFET BGA Packaging Configuration: Figure 1 Packaging Description: FC-18A MOSFET BGA parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film
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FC-18A
177cm
948c
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