Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. SJPX-F2 1. Scope The present specifications shall apply to an SJPX-F2. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 060414 1／5 61426-01 SANKEN ELECTRIC CO., LTD.
|
Original
|
PDF
|
UL94V-0
|
Untitled
Abstract: No abstract text available
Text: DBI 25 KN<YS KNNY KKNY< $P W >F 8 E^- W ]> ABG B, C N,/1 K >@@ M@@ ¥@@ J>@@ K JM@ >¥@ F?@ ¥@@ ^95*% PH$ >F2@> PH$ >F2@M PH$ >F2@¥ PH$ >F2J> TU _ @SJF @S] @SZ J J?@@ J@@@ PH$ >F2J? Symbol Conditions Values Units $P ^( W M? ABS VJ[J>@S 1( 63(' -&&'/1; ^( W M? ABS -0(%%/%>G
|
Original
|
PDF
|
|
"infrared led" 980 nm
Abstract: "infrared led" 800 nm 980 nm IR908-7P infrared LED white Infrared Emitting Diode Pink
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIR-090-175 REV : 1.0 PAGE : 1/7 Infrared LED MODEL NO : IR908-7P/F2 Features : Low forward voltage Peak wavelength p=940nm High reliability Description : The IR908-7P/F2 is a GaAs GaAlAs infrared emitting diode. The miniature side-facing
|
Original
|
PDF
|
DIR-090-175
IR908-7P/F2
940nm
IR908-7P/F2
DIR-090-152
IR908-7P
Pcs/1Bag10
"infrared led" 980 nm
"infrared led" 800 nm 980 nm
IR908-7P
infrared LED white
Infrared Emitting Diode Pink
|
"infrared led" 800 nm 980 nm
Abstract: "infrared led" 980 nm infrared DIR-090-041
Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIR-090-041 REV : 1.2 PAGE : 1/7 Infrared LED MODEL NO : IR908-6C/F2 Features : Low forward voltage Peak wavelength p=940nm High reliability Description : The IR908-6C/F2 is a GaAs GaAlAs infrared emitting diode. The miniature side-facing
|
Original
|
PDF
|
DIR-090-041
IR908-6C/F2
940nm
IR908-6C/F2
Pcs/1Bag10
"infrared led" 800 nm 980 nm
"infrared led" 980 nm
infrared
DIR-090-041
|
426L1
Abstract: 721L1 409L1 620L1 621L1 412a 432I2 726L1 620-L1 410G2
Text: 4. Options Overview All versions: High-side switch, input protection, ESD protection, reverse battery protection monolithic devices with 150 Ω in GND connection Type 307 308 412A 413A 412B 410D/D2 410E/E2 410F/F2 410G 410H 432I2 409L1 707 412B2 432D/D2 432E/E2 432F/F2 410G2 410H2
|
Original
|
PDF
|
410D/D2
410E/E2
410F/F2
432I2
409L1
412B2
432D/D2
432E/E2
432F/F2
410G2
426L1
721L1
409L1
620L1
621L1
412a
726L1
620-L1
|
Untitled
Abstract: No abstract text available
Text: Eice DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 EiceDRIVER™ datash eet <Revision 2.5>, 21.01.2013 Indust rial Po wer & Con trol Edition 21.01.2013 Published by Infineon Technologies AG
|
Original
|
PDF
|
6ED003L06-F2
6ED003L02-F2
6ED003L06-F2,
PG-TSSOP-28
|
CIRCUIT DIAGRAM FOR gsm modem with sim 300
Abstract: gsm modem with sim full schematic circuit diagram gsm circuit diagram project sim 300 gsm module sim gsm modem circuit diagram microcontroller interface with gsm module gsm modem sim 900 IEC 68-2-29 MS 1307 sim card holder smd
Text: GSM/GPRS Embedded Data/Fax/Voice Wireless Modem MTMMC-G-F1 MTMMC-G-F2 Developer’s Guide ModemModule Developer’s Guide MTMMC-G-F1 and MTMMC-G-F2 PN S000295A, Version A 07/15/03 Copyright This publication may not be reproduced, in whole or in part, without prior expressed written permission from
|
Original
|
PDF
|
S000295A,
CIRCUIT DIAGRAM FOR gsm modem with sim 300
gsm modem with sim full schematic circuit diagram
gsm circuit diagram project
sim 300 gsm module
sim gsm modem circuit diagram
microcontroller interface with gsm module
gsm modem sim 900
IEC 68-2-29
MS 1307
sim card holder smd
|
Untitled
Abstract: No abstract text available
Text: Eice DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 EiceDRIVER™ datash eet <Revision 2.4>, 04.09.2012 Indust rial Po wer & Con trol Edition 04.09.2012 Published by Infineon Technologies AG
|
Original
|
PDF
|
6ED003L06-F2
6ED003L02-F2
6ED003L06-F2,
PG-TSSOP-28
|
6ED003L06F2
Abstract: 6ED003L02-F2 6ED003L06-F2 PG-TSSOP-28
Text: Eice DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 EiceDRIVER™ datash eet <Revision 2.3>, 21.08.2012 Indust rial Po wer & Con trol Edition 21.08.2012 Published by Infineon Technologies AG
|
Original
|
PDF
|
6ED003L06-F2
6ED003L02-F2
6ED003L06-F2,
PG-TSSOP-28
6ED003L06F2
6ED003L02-F2
PG-TSSOP-28
|
Untitled
Abstract: No abstract text available
Text: Eice DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 EiceDRIVER™ datash eet <Revision 2.2>, 16.03.2012 Indust rial Po wer & Con trol Edition 16.03.2012 Published by Infineon Technologies AG
|
Original
|
PDF
|
6ED003L06-F2
6ED003L02-F2
6ED003L06-F2,
PG-TSSOP-28
|
6ED2
Abstract: No abstract text available
Text: EI CE D RI V ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 6EDL04I06PT 6EDL04I06NT 6EDL04N06PT 6EDL04N02PR EICEDRIVER™ Preli mina r y datas he et <Revision 1.1>, 08.08.2011 Preliminary
|
Original
|
PDF
|
6ED003L06-F2
6ED003L02-F2
6EDL04I06PT
6EDL04I06NT
6EDL04N06PT
6EDL04N02PR
PG-TSSOP-28
6ED2
|
6EDL04N02
Abstract: PG-TSSOP-28 MIPI bridge 6EDL04I06P
Text: EI CE D RI V ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 6EDL04I06PT 6EDL04I06NT 6EDL04N06PT 6EDL04N02PR EICEDRIVER™ datash eet <Revision 1.2>, 28.08.2011 Preliminary AS IC & P owe r I C
|
Original
|
PDF
|
6ED003L06-F2
6ED003L02-F2
6EDL04I06PT
6EDL04I06NT
6EDL04N06PT
6EDL04N02PR
PG-TSSOP-28
6EDL04N02
PG-TSSOP-28
MIPI bridge
6EDL04I06P
|
Untitled
Abstract: No abstract text available
Text: Eic e DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 EiceDRIVER™ datas h eet <Revision 2.5>, 21.01.2013 Indus t rial Po wer & Con trol Edition 21.01.2013 Published by Infineon Technologies AG
|
Original
|
PDF
|
6ED003L06-F2
6ED003L02-F2
6ED003L06-F2,
PG-TSSOP-28
|
coolsettm-f2
Abstract: ICE2A380 ICE2A380P2 coolsettmf2 K X365
Text: D a t a s h e e t V e r s i o n 0 .0 , 2 3 S e p 2 00 4 CoolSET -F2 ICE2A380P2 Off-Line SMPS Current Mode Controller with integrated 800V CoolMOS™ Power Management & Supply N e v e r s t o p t h i n k i n g . CoolSET™-F2 ICE2A380P2 Revision History:
|
Original
|
PDF
|
ICE2A380P2
coolsettm-f2
ICE2A380
ICE2A380P2
coolsettmf2
K X365
|
|
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E35A2CPS, E35A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=35A. E L2 Reverse Voltage : 200V Min. F1 L1 G POLARITY B E35A2CPS (+ Type) E35A2CPR (- Type)
|
Original
|
PDF
|
E35A2CPS,
E35A2CPR
E35A2CPS
|
L2 zener
Abstract: E30A23VPR E30A23VPS
Text: SEMICONDUCTOR E30A23VPS, E30A23VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=30A. E L2 Zener Voltage : 23V Typ. F1 POLARITY E30A23VPR (+ Type) (- Type) B L1 G E30A23VPS
|
Original
|
PDF
|
E30A23VPS,
E30A23VPR
E30A23VPS
L2 zener
E30A23VPR
E30A23VPS
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E25A2CPS, E25A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V Min. POLARITY L2 E F1 E25A2CPS (+ Type) B L1 G E25A2CPR (- Type)
|
Original
|
PDF
|
E25A2CPS,
E25A2CPR
E25A2CPS
100mA
100mA,
100mS
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E35A21VPS, E35A21VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=35A. L2 E Zener Voltage : 21V Typ. F1 POLARITY E35A21VPS (+ Type) B L1 G E35A21VPR (- Type)
|
Original
|
PDF
|
E35A21VPS,
E35A21VPR
E35A21VPS
100mA,
100mS
|
E25A2CPR
Abstract: E25A2CPS
Text: SEMICONDUCTOR E25A2CPS, E25A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V Min. E POLARITY L2 F1 E25A2CPS (+ Type) B L1 G E25A2CPR (- Type)
|
Original
|
PDF
|
E25A2CPS,
E25A2CPR
E25A2CPS
100mA
100mA,
100mS
E25A2CPR
E25A2CPS
|
alternator diode
Abstract: alternator diode 50a E50A2CPS
Text: SEMICONDUCTOR E50A2CPS, E50A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=50A. E L2 Reverse Voltage : 200V Min. F1 L1 G POLARITY E50A2CPS (+ Type) B E50A2CPR (- Type)
|
Original
|
PDF
|
E50A2CPS,
E50A2CPR
E50A2CPS
100mA,
100mA
100ms
alternator diode
alternator diode 50a
E50A2CPS
|
SKKD 80
Abstract: skkd 330 skkd80 sknd 40
Text: SEMIKRDN Section 2: SEMIPACK Fast Diode/Thyristor Modules Summary of Types Type Circuit V drm V rrm Itrm s Ifrms Ita v Tease I fav 10 ms 25 °C •New Type SKKD 40 F SKKD 42 F SKKD 50 E • SKKD 60 F2* • SKKD 75 F2* • SKKD 80 F2* SKKD 105 F SKKD 115 F
|
OCR Scan
|
PDF
|
SKKE165M
SKFT150
SKKD 80
skkd 330
skkd80
sknd 40
|
TDI CCD bi-directional
Abstract: tdi ccd 512 tdi ccd dalsa ia-d2-0512 i1991
Text: MSE D y' y / V i/ • s b is im ooooaas DALSA INC. oti « hals IL-E1/F2 Series TDI QUIETSENSOR CCD Image S e n s o rs IL-E1/IL-F2 Series Two Dimensional Image Sensors for TDI Applications mlsa inc • 2048, 1024 & 512 Pixels with 96 TDI Stages • Bi-directional operation in the
|
OCR Scan
|
PDF
|
IA-D2-0512
TDI CCD bi-directional
tdi ccd 512
tdi ccd
dalsa ia-d2-0512
i1991
|
IL-C9-0512
Abstract: Dalsa tdi IL-C2-0512 tdi ccd dalsa tdi ccd tdi ccd 512 F2 Series IL-C3-0256 Dalsa line scan sensor
Text: MSE D y' y / V i/ • s b is im ooooaas DALSA INC. oti « hals IL-E1/F2 Series TDI QUIETSENSOR CCD Image S e n s o rs IL-E1/IL-F2 Series Two Dimensional Image Sensors for TDI Applications mlsa inc • 2048, 1024 & 512 Pixels with 96 TDI Stages • Bi-directional operation in the
|
OCR Scan
|
PDF
|
QQ0033S
ia-d2-0512
IL-C9-0512
Dalsa tdi
IL-C2-0512
tdi ccd dalsa
tdi ccd
tdi ccd 512
F2 Series
IL-C3-0256
Dalsa
line scan sensor
|
Untitled
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. M U R F2 0 0 0 5 R THRU M U R F2 0 0 6 0 (R ) SUPER FAST DIODE MODULE TYPES 200A 200 Amp Rectifier 50-600 Volts Features High Surge Capability T y p e s Up to 6 0 0 V V rrm Full Pack A 4 - Maximum Ratings Storage T e m p e ra tu re :-55 C to + 1 7 5 ° C
|
OCR Scan
|
PDF
|
MURF20005
MURF20060
MURF20010
MURF20020
|
