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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1903B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 9 0 3 B is a lo w noise G aAs FET w ith an N -c h a n n e l S c h o ttky gate, w hich is designed fo r use in S to Ku band Unit: millimeters inches


    OCR Scan     		PDF F1903B F1303B 12GHz

    MGF1903B

    Abstract: MGF1303B 903b mgf1903
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1903B TAPE CA RR IER LOW NOISE GaAs FET DESCRIPTION The M G F1903B is a low noise GaAs FET w ith an N-channel Schottky gate, which is designed fo r use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGF1903B MGF1303B. MGF1903B 12GHz MGF1303B 903b mgf1903

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F1903B TARE CARRIER LOW NOISE GaAs FET D E S C R IP T IO N The MGF1 9 0 3 B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGF1903B MGF1903B F1303B.