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    MGF1402

    Abstract: MGF1302 MGF1302-15 MGF1902B-65 MGFC1402 mgf*1302-15 MGFC1402-T03 mgf1302 p
    Text: Die_ MG FC 1402 A Package m it s u b is h i ¡¡J ^ ][0 2 ELECTRONIC DEVICE GROUP M G F1902B DESCRIPTIO N FEATURES Devices in this family are constructed using the MG FC 1402 die. These devices are N-channel Schottky gate type and are suitable for use in


    OCR Scan     		PDF F1902B MGF1302/1402/1902B MGF1902B MGFC1402 MGF1302 MGF1402 MGF1902B MGFC1402-T01 MGFC1402-T02 MGFC1402-T03 MGF1302-15 MGF1902B-65 mgf*1302-15 mgf1302 p

    MGF2430A

    Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E


    OCR Scan     		PDF 12GHz MGF4919E MGF4914E MGF49T4D MGF4714AP MGF4914D MGF1923 MGF1902B MGF2430A MGF4919 MGF1402B MGF2430 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F1902B TAPE CARRIER LOW NOISE GaAs FE T DESCRIPTION T h e M G F 1 9 0 2 B is a lo w noise GaAs FET w ith an N -c h a n n e l S c h o ttky gate, w hich is designed fo r use in S to X band am plifiers and oscillators. T he herm etically sealed m etalceramic


    OCR Scan     		PDF MGF1902B