eiaj-rrm 12 d
Abstract: eiaj-rrm 12 b eiaj-rrm eiaj-rrm 08 b iec 60286 14008 2.45c ABEL transistor marked yb JAPAN transistor
Text: Sheet No. 1 / 7 ຠⷙᩰ / Product Specification 䊁䊷䊏䊮䉫᭽ᦠ / Taping Specification ຠ⒳ฬ / Type Number : SSMini3-F1 䍢䍵䍻䍚䍼䍛䍞 TX /L Prepared Checked Applied Established by by by by N.Kasuya T.Kubo H.Shidooka SSMini3-F1 Transistor (TX)/L
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mark v02
Abstract: FOD250L Analog devices marking Information PACKAGE SOIC FOD050L FOD050LR1 FOD050LR2 FOD053L FOD250LS FOD250LSD FOD250LT
Text: LVTTL/LVCMOS 3.3V HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: FOD050L DUAL-CHANNEL: FOD053L FOD250L PACKAGE SCHEMATIC 8 VCC N/C 1 8 V 1 7 VB + 2 8 VCC + 1 F1 _ 2 7 V01 3 6 V02 VF _ 6 VO 3 _ V 8 N/C 4 8 1 5 GND F2 5 GND + 4 1 FOD050L, FOD250L FOD053L
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FOD050L
FOD053L
FOD250L
FOD050L,
FOD250L,
FOD050L
FOD053L
mark v02
FOD250L
Analog devices marking Information PACKAGE SOIC
FOD050LR1
FOD050LR2
FOD250LS
FOD250LSD
FOD250LT
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FOD250L
Abstract: FOD050L FOD050LR1 FOD050LR2 FOD053L FOD250LS FOD250LSD FOD250LT VDE0884
Text: LVTTL/LVCMOS 3.3V HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: FOD050L DUAL-CHANNEL: FOD053L FOD250L PACKAGE SCHEMATIC 8 VCC N/C 1 8 V 1 7 VB + 2 8 VCC + 1 F1 _ 2 7 V01 3 6 V02 VF _ 6 VO 3 _ V 8 N/C 4 8 1 5 GND F2 5 GND + 4 1 FOD050L, FOD250L FOD053L
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FOD050L
FOD053L
FOD250L
FOD050L,
FOD250L,
FOD050L
FOD053L
FOD250L
FOD050LR1
FOD050LR2
FOD250LS
FOD250LSD
FOD250LT
VDE0884
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Untitled
Abstract: No abstract text available
Text: LVTTL/LVCMOS 3.3V HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: FOD050L DUAL-CHANNEL: FOD053L FOD250L PACKAGE SCHEMATIC 8 VCC N/C 1 8 V 1 7 VB + 2 8 VCC + 1 F1 _ 2 7 V01 3 6 V02 VF _ 6 VO 3 _ V 8 N/C 4 8 1 5 GND F2 5 GND + 4 1 FOD050L, FOD250L FOD053L
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FOD050L
FOD053L
FOD250L
FOD050L,
FOD053L
FOD250L,
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FOD250L
Abstract: No abstract text available
Text: LVTTL/LVCMOS 3.3V HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: FOD050L DUAL-CHANNEL: FOD053L FOD250L PACKAGE SCHEMATIC 8 VCC N/C 1 8 V 1 7 VB + 2 8 VCC + 1 F1 _ 2 7 V01 3 6 V02 VF _ 6 VO 3 _ V 8 N/C 4 8 1 5 GND F2 5 GND + 4 1 FOD050L, FOD250L FOD053L
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FOD050L
FOD053L
FOD250L
FOD050L,
FOD053L
FOD250L,
FOD250L
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6N136
Abstract: a 2530 6N135 HCPL-2530 HCPL-2503 HCPL-2531 HCPL-4502 hcpl 2531 HCPL4502 HCPL2531
Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: 6N135 DUAL-CHANNEL: HCPL-2530 6N136 HCPL-2531 PACKAGE HCPL-2503 HCPL-4502 SCHEMATIC N/C 1 8 VCC + 1 V 8 + 2 1 7 VB 8 VCC F1 _ 2 7 V01 3 6 V02 VF _ 3 6 VO _ VF2 N/C 4 8 5 GND + 4 5 GND 8 1 1 6N135, 6N136, HCPL-2503, HCPL-4502
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6N135
HCPL-2530
6N136
HCPL-2531
HCPL-2503
HCPL-4502
6N135,
6N136,
HCPL-2503,
6N136
a 2530
6N135
HCPL-2530
HCPL-2503
HCPL-2531
HCPL-4502
hcpl 2531
HCPL4502
HCPL2531
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pulse transformer 4502
Abstract: 2531 HCPL-2530 hcpl2530 TA 2503 HCPL4502 HCPL2531
Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: 6N135 DUAL-CHANNEL: HCPL-2530 6N136 HCPL-2531 PACKAGE HCPL-2503 SCHEMATIC N/C 1 8 VCC + 1 V 8 + 2 1 7 VB 8 VCC F1 _ 2 7 V01 3 6 V02 VF _ 3 6 VO _ V N/C 4 8 HCPL-4502 5 GND F2 + 4 5 GND 8 1 1 6N135, 6N136, HCPL-2503, HCPL-4502
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6N135
HCPL-2530
6N136
HCPL-2531
HCPL-2503
HCPL-4502
6N135,
6N136,
HCPL-2503,
HCPL-4502
pulse transformer 4502
2531
hcpl2530
TA 2503
HCPL4502
HCPL2531
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pulse transformer 4502
Abstract: A 2530 2531 CI D 2530 4502 C CM 2530 A 2531 Optocouplers 4502 HCPL2531 6N135
Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: 6N135 DUAL-CHANNEL: HCPL-2530 6N136 HCPL-2531 PACKAGE HCPL-2503 SCHEMATIC N/C 1 8 VCC + 1 V 8 + 2 1 7 VB 8 VCC F1 _ 2 7 V01 3 6 V02 VF _ 3 6 VO _ V N/C 4 8 HCPL-4502 5 GND F2 + 4 5 GND 8 1 1 6N135, 6N136, HCPL-2503, HCPL-4502
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6N135
HCPL-2530
6N136
HCPL-2531
HCPL-2503
HCPL-4502
6N135,
6N136,
HCPL-2503,
pulse transformer 4502
A 2530
2531
CI D 2530
4502 C
CM 2530
A 2531
Optocouplers 4502
HCPL2531
6N135
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pulse transformer 4502
Abstract: hcpl2531 HCPL-2531 Optocouplers 4502 HCPL 480 4502 HCPL-2530 M 2530 TA 2503 6N135
Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: 6N135 DUAL-CHANNEL: HCPL-2530 6N136 HCPL-2531 PACKAGE HCPL-2503 SCHEMATIC N/C 1 8 VCC + 1 V 8 + 2 1 7 VB 8 VCC F1 _ 2 7 V01 3 6 V02 VF _ 3 6 VO _ V N/C 4 8 HCPL-4502 5 GND F2 + 4 5 GND 8 1 1 6N135, 6N136, HCPL-2503, HCPL-4502
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6N135
HCPL-2530
6N136
HCPL-2531
HCPL-2503
HCPL-4502
6N135,
6N136,
HCPL-2503,
pulse transformer 4502
hcpl2531
HCPL-2531
Optocouplers 4502
HCPL 480
4502
HCPL-2530
M 2530
TA 2503
6N135
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PN5179
Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency
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PN5179
MMBT5179
OT-23
PN5179
CBVK741B019
F63TNR
MMBT5179
MPS5179
PN2222N
TRANSISTOR C 3223
MJC2
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MMBT2484
Abstract: PN2484 2N5088 CBVK741B019 F63TNR PN2222N
Text: PN2484 / MMBT2484 PN2484 MMBT2484 C E C B TO-92 SOT-23 E B Mark: 1U NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.
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PN2484
MMBT2484
PN2484
OT-23
2N5088
MMBT2484
CBVK741B019
F63TNR
PN2222N
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MT3S113TU
Abstract: No abstract text available
Text: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz)
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MT3S113TU
MT3S113TU
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Untitled
Abstract: No abstract text available
Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking
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MT3S113P
SC-62
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Untitled
Abstract: No abstract text available
Text: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 3 2 1.1. Base 2.2. Emitter 3.3. Collector R7 1 1 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz)
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MT3S113TU
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MT3S113
Abstract: transistor 2F to-236 4360A
Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking
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MT3S113
O-236
SC-59
MT3S113
transistor 2F to-236
4360A
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Untitled
Abstract: No abstract text available
Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking
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MT3S113
O-236
SC-59
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mt3s113p
Abstract: No abstract text available
Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking
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MT3S113P
SC-62
mt3s113p
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CBVK741B019
Abstract: F63TNR MMBTA43 MPSA42 MPSA43 PN2222N DATE CODE FAIRCHILD
Text: MPSA43 MMBTA43 C E C B TO-92 B SOT-23 E Mark: 1E NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings*
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MPSA43
MMBTA43
OT-23
MPSA42
CBVK741B019
F63TNR
MMBTA43
MPSA43
PN2222N
DATE CODE FAIRCHILD
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pn2222n
Abstract: CBVK741B019 F63TNR MMBT3702 MPS3702 PN2907A transistor mark code t1 Fairchild taping TO-92
Text: MPS3702 MMBT3702 C E C TO-92 BE B SOT-23 Mark: 137 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*
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MPS3702
MMBT3702
OT-23
500mA.
PN2907A
pn2222n
CBVK741B019
F63TNR
MMBT3702
MPS3702
transistor mark code t1
Fairchild taping TO-92
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2N5088
Abstract: CBVK741B019 F63TNR MMBT2484 PN2222N PN2484
Text: PN2484 / MMBT2484 PN2484 MMBT2484 C E C B TO-92 SOT-23 E B Mark: 1U NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.
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PN2484
MMBT2484
PN2484
OT-23
2N5088
CBVK741B019
F63TNR
MMBT2484
PN2222N
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transistor marking MCs
Abstract: SOT 23 CODE MCS NPN marking MCs marking MCs sot-323 Q62702-F1645 bfs 11
Text: BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration BFS 17W MCs 1=B Q62702-F1645 2=E Package 3=C SOT-323 Maximum Ratings of any single Transistor Parameter
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Q62702-F1645
OT-323
Nov-28-1996
transistor marking MCs
SOT 23 CODE MCS
NPN marking MCs
marking MCs sot-323
Q62702-F1645
bfs 11
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MT6320
Abstract: No abstract text available
Text: PHOTO TRANSISTOR COUPLER MARKTECH INTERNATIONAL 1ÖE D • ST'l'ibSS G Q G Q M ? 6! 2 MT6350, MT6360 APPLICATIONS • OFFICE MACHINERY • COPIERS • SOLID STATE RELAY • SWITCHING POWER SUPPLY • PROGRAMABLE CONTROLLERS The MARKTECH MT6350 and MT6360 consist
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MT6350,
MT6360
MT6350
MT6360
5000Vrms
IEC380/VDE0806
TPC6350
MT6320
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IMX6
Abstract: MARKING Pa 6pin TRANSISTOR 6pin ic marking code P2 2SC2413K T108 A10Z
Text: IMX6 Transistor, dual, NPN Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: X6 • package contains two independent NPN transistors (2SC2413K) • same size as UMT3 (UMT, SC-70) so same placement machine can be
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SC-74)
2SC2413K)
SC-70)
D015032
IMX6
MARKING Pa 6pin TRANSISTOR
6pin ic marking code P2
2SC2413K
T108
A10Z
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2SC2059K
Abstract: 2SC4099 2SC4649
Text: 2SC2059K 2SC4099 2SC4649 Transistor, NPN Features • available in SMT3 SMT, SC-59 , UMT3 (UMT, SC-70), and EMT3 (EMT, SC-75) packages • package marking: 2SC2059K, 2SC4099, 2SC4649; J-*, where ★ is hFE code • high transition frequency, typically fT = 500 MHz at 1 mA
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2SC2059K
2SC4099
2SC4649
SC-59)
SC-70)
SC-75)
2SC2059K,
2SC4099,
2SC4649;
2SC2059K
2SC4649
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