FF 150 R 1200 kf igbt
Abstract: FF 50 R 12 KF2 FZ 300 R 06 KL IGBT module FZ circuit of six pack module igbt FS-100 r 12 FZ 75 IGBT FZ 1200 IGBT FZ 600 IGBT module FZ 1200
Text: IGBT Standard Modules Type VCES V IGBT-Standardmodule IC A ICRM A VCEsat V ton µs ts µs tp = 1 ms tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. tf µs RthJC tvj max °C/W °C tvj=25°C per arm typ. Dual modules n FF 15 R 12 KF 1200 15 30 3,0 0,4 0,50 0,20
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IGBT FZ 600
Abstract: eupec FZ 800 r 12 kf1 68nf IGBT FZ 1200 kf1 IGBT FZ 1200
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 600 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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eupec igbt
Abstract: 68nf
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 600 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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IGBT module FZ 1200
Abstract: KF6C FZ800R17KF6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FZ800R17KF6CB2
IGBT module FZ 1200
KF6C
FZ800R17KF6CB2
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68nf
Abstract: IGBT module FZ
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 600 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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IGBT FZ 1200 kf1
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 600 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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M116
Abstract: 300L-120
Text: F U JI 1-Pack IGBT 1200 V 300 A 1MB/ 300L-120 M U M Ë ïïr a iÊ IGBT MODULE ( L series Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter fo r M otor Drive • AC and DC Servo Drive A m p lifie r
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300L-120
00A/jjs
M116
300L-120
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Untitled
Abstract: No abstract text available
Text: SC11015 300/1200 Bit Per Second Modem SIERRA SEMICONDUCTOR □ A ll m o d u la to rs , d e m o d u la to rs a n d f ilte rs w ith c o m p r o m is e e q u a liz e rs o n ch ip □ C all p ro g re s s m o d e , to n e g e n e ra to rs for D T M F, V.22 g u a rd
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SC11015
SC11014
11015CV
SC11015CN
SC11015
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IGBT FF 300
Abstract: eupec FZ 50 A 12 KF FZ 75 eupec FZ 800 R 16 fz 69 eupec FS 25 R 12 KL eupec igbt 400 A FZ200 Eupec fz 1200 r 12 50/R005 FZ
Text: IGBT modules EUPEC 3 4 0 3 2 e!? D0DG122 MTE D 071 • UPEC Fast modules Type VcES V ► ► FF FF FF FF FF 15 25 25 50 50 FF 75 FF 75 FF 100 FF 100 FF 150 FF 150 FF 200 FF 200 FF 300 FZ 200 FZ 300 FZ 300 FZ 400 FZ 400 R 12 R 06 R 12 R 06 R 12 KF KF KF KF
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D0DG122
IGBT FF 300
eupec FZ 50 A 12 KF
FZ 75
eupec FZ 800 R 16
fz 69
eupec FS 25 R 12 KL
eupec igbt 400 A
FZ200
Eupec fz 1200 r 12
50/R005 FZ
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eupec FZ 50 A 12 KF
Abstract: IGBT FF 300 fz 69 FZ 300 R 06 KL kl 50 eupec FZ 800 R 16 Eupec fz 1200 r 12 FZ15A10KN FF 75 R 1200 kl igbt eupec FS 25 R 12 KL
Text: IGBT modules EUPEC 3 4 0 3 2 e!? D0DG122 MTE D 071 • UPEC Fast modules Type VcES V ► ► FF FF FF FF FF 15 25 25 50 50 FF 75 FF 75 FF 100 FF 100 FF 150 FF 150 FF 200 FF 200 FF 300 FZ 200 FZ 300 FZ 300 FZ 400 FZ 400 R 12 R 06 R 12 R 06 R 12 KF KF KF KF
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D0DG122
eupec FZ 50 A 12 KF
IGBT FF 300
fz 69
FZ 300 R 06 KL
kl 50
eupec FZ 800 R 16
Eupec fz 1200 r 12
FZ15A10KN
FF 75 R 1200 kl igbt
eupec FS 25 R 12 KL
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FS150R12KF4
Abstract: IGBT module FZ 1200 FF 400 R 14 FS200R12KF4 400R12K DIODE e2l IGBT module FZ 1200 R17kf4 igbt F4 400 R 12 KF4 IGBT FZ 800R12kF4 FZ 51
Text: IGBT High-Power Module Type Range status o f sam ple availability 4 □ production • prototype. + ENG sam ples. BMOaai? 00Q25G4 fill # 1 . Q '9 8 O 2. Q '98 IGBT High Power Modules T ype Dual modules FF200R 33KF1 FF 400 R 12 KF4 FF 400 R 16 KF4 FF 400 R 1 7 K F 4
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140x73mm
140x130
140x190
3M03HT
00G2S07
FS150R12KF4
IGBT module FZ 1200
FF 400 R 14
FS200R12KF4
400R12K
DIODE e2l
IGBT module FZ 1200 R17kf4
igbt F4 400 R 12 KF4
IGBT FZ 800R12kF4
FZ 51
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FZ 77 1000
Abstract: IGBT FZ 1200 FZ 77 FF R 1200 FZ200
Text: IGBT modules VcES IC R M lc v CEsal to n ts tf R th J C Wj ' l l i • DC V A '• i * 2 5 °C . ty p t., = 2 5 °C , ty p 'v, 2 5 °C , ly p p e r a rm V us us MS ° C /W °c tp = 1 ms •vi = 2 5 °C A ty p Dual modules FF 15 R 12 KF 1200 15 30 3 0.4 0.5
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IGBT FZ 1200 kf1
Abstract: 600R12KF4
Text: IGBT High Power Modules Type V C ES lc I CRM V cE sa t ton ts tf R ,h jc tv , max V A A tp = 1 ms V MS MS °c/w °c tvj=25°C typ. |js tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. o u tlin e p e r a rm D ual m o d u le s ▼ FF 400 R 12 KF4 1200 400 800 2,7
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600R16KF4
00021SS
IGBT FZ 1200 kf1
600R12KF4
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IGBT FZ 1200 kf1
Abstract: 600R16KF4 bs 1600
Text: IGBT High Power Modules Type V C ES lc I CRM V cE sa t ton ts tf R ,h jc tv , max V A A tp = 1 ms V MS MS °c/w °c tvj=25°C typ. |js tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. o u tlin e p e r a rm D ual m o d u le s ▼ FF 400 R 12 KF4 1200 400 800 2,7
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600R16KF4
00021SS
IGBT FZ 1200 kf1
bs 1600
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Untitled
Abstract: No abstract text available
Text: 7 =3 ? - 3 / F 300 R 12 KF EU P EC 52E D • 3 ll 0 3 2 tì 7 000Q 254 Sb2 HUPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/per module 0,062 °C/W Ttansistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte
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34D32CI7
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Untitled
Abstract: No abstract text available
Text: FZ 300 R 12 KF 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values 1200 Thermal properties RthJC DC, pro Baustein / per module 0 ,0 6 3 RthCK pro Baustein / per module
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Untitled
Abstract: No abstract text available
Text: FF 300 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 300 A lc Thermische Eigenschaften Rthjc RthCK IC R M tp = 1 ms 600 A Pto t tc = 25°C 1800 W Thermal properties DC, pro Baustein/per module
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300R12tCF2
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Untitled
Abstract: No abstract text available
Text: FF 300 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 300 A lc Thermische Eigenschaften Rthjc RthCK Thermal properties DC, pro Baustein/per module DC, pro Zweig / per arm pro Baustein/per module
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300R12tCFZ
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transistor 131-6
Abstract: JET 4A M106 TRANSISTOR 300Z-120 M106 DIODE 03 BJT safe operating area dc motor 7 kg-cm
Text: FUJI [l'iUM ËïrDSOË 1 D 3 I l- ; - Z 1 2 1-Pack BJT 1200 V 300 A I Outline Drawings u POWER TRANSISTOR MODULE • & f t : Features • ¡SM JÏ High Voltage U ¥4 = t“ KF*9/8c Including Free Wheeling Diode • ASO ^ 7 £ i n Excellent Safe Operating Area
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300Z-120
E82988
Tj-125Â
transistor 131-6
JET 4A
M106 TRANSISTOR
300Z-120
M106
DIODE 03
BJT safe operating area
dc motor 7 kg-cm
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Untitled
Abstract: No abstract text available
Text: FZ 400 R 12 KF Therm ische Eigenschaften Therm al properties 0,052 °C/W RthJC DC, pro B a u ste in /p e r module Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 400 A RthCK lc 0,03 pro B a u s te in /p e r module
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34032T7
0D2D11
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Untitled
Abstract: No abstract text available
Text: FZ 300 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Thermal properties 0,062 °C/W Hhüc DC, pro Baustein / per module R, RthCK 0,03 pro Baustein / per module °C/W Maximum rated values V cES le 1200
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34D3ET7
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Untitled
Abstract: No abstract text available
Text: FF 200 R 12 KF 2 Therm ische Eigenschaften Therm al properties 0,048 Rtwc DC, pro Baustein / per module 0,096 DC, pro Zweig / per arm 0,03 RthCK pro Baustein 1 per module pro Zweig / per arm 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties
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0R12KFÃ
3M03517
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characteristics of zener diode
Abstract: 1DI300ZP-120 zener diode b355 M114 1DI300Zp120 TRANSISTOR BO 352
Text: 1 D 3 I Z P - 1 2 3 A « ± y<r7 - h : Outline Drawings POWER TRANSISTOR MODULE •Features • hFE^^V-' High DC Current Gain • KF*3/K •smmmuimm : Applications • General Purpose Inverter >'<— 9 • Uninterruptible Power Supply • N Servo & Spindle Drive for NC Machine Tools
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1DI300ZP-120
26-35kg
E82988
095t/R89
characteristics of zener diode
zener diode b355
M114
1DI300Zp120
TRANSISTOR BO 352
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50yjs
Abstract: No abstract text available
Text: FF 150 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values V ces lc Therm ische Eigenschaften Therm al properties 0 ,055 DC, pro Baustein / per module R th J C 0,11 DC, pro Zweig / per arm
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100JUS^
50yjs
FFtfOR12QCKF3
3M035T7
50yjs
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