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    F 199 TRANSISTOR Search Results

    F 199 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    F 199 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF199

    Abstract: BF 234 transistor BP317 data bf199 transistor NPN BF199
    Text: 00-07-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-048-21 BF 199 trans DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor


    Original     		PDF M3D186 BF199 SCA55 117047/00/02/pp8 BF199 BF 234 transistor BP317 data bf199 transistor NPN BF199

    ci 741

    Abstract: GALVANTECH UA 741 datasheet GVT72256A16 72256A16
    Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72256A16 REVOLUTIONARY PINOUT 256K X 16 256K x 16 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT72256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high


    Original     		PDF GVT72256A16 GVT72256A16 72256A16 ci 741 GALVANTECH UA 741 datasheet

    UA 741 datasheet

    Abstract: ci 741 GVT7264A16 7264A16
    Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT7264A16 REVOLUTIONARY PINOUT 64K X 16 64K x 16 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT7264A16 is organized as a 65,536 x 16 SRAM using a four-transistor memory cell with a high performance,


    Original     		PDF GVT7264A16 GVT7264A16 7264A16 UA 741 datasheet ci 741

    PF351

    Abstract: GVT73256A16
    Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73256A16 REVOLUTIONARY PINOUT 256K X 16 256K x 16 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT73256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high


    Original     		PDF GVT73256A16 GVT73256A16 73256A16 PF351

    Galvantech

    Abstract: GVT72028A4 GVT72028A4J-10L 28-pin SOJ
    Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72028A4 TRADITIONAL PINOUT 256K X 4 256K x 4 SRAM WITH SINGLE CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • The GVT72028A4 is organized as a 262,144 x 4 SRAM using a four-transistor memory cell with a high performance,


    Original     		PDF GVT72028A4 GVT72028A4 72028A4 Galvantech GVT72028A4J-10L 28-pin SOJ

    GALVANTECH

    Abstract: GVT72024A8
    Text: GALVANTECH, INC. GVT72024A8 TRADITIONAL PINOUT 128K X 8 SRAM ASYNCHRONOUS SRAM 128K x 8 SRAM WITH TWO CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • The GVT72024A8 is organized as a 131,072 x 8 SRAM using a four-transistor memory cell with a high performance,


    Original     		PDF GVT72024A8 GVT72024A8 32-pin 72024A8 GALVANTECH

    GVT72512A8

    Abstract: No abstract text available
    Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72512A8 REVOLUTIONARY PINOUT 512K X 8 512K x 8 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • The GVT72512A8 is organized as a 524,288 x 8 SRAM using a four-transistor memory cell with a high performance,


    Original     		PDF GVT72512A8 GVT72512A8 72512A8

    GVT73512A8

    Abstract: No abstract text available
    Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73512A8 REVOLUTIONARY PINOUT 512K X 8 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • The GVT73512A8 is organized as a 524,288 x 8 SRAM using a four-transistor memory cell with a high performance,


    Original     		PDF GVT73512A8 GVT73512A8 73512A8

    Untitled

    Abstract: No abstract text available
    Text: SÊf» 2 4 199, 2 HARRIS H F A • Unity Gain Bandwidth . 300MHz • Full Power B a n d w id th .22MHz • High Slew R a te . 420V / jjs


    OCR Scan     		PDF 300MHz 22MHz 9P0005-5/-9

    bf199

    Abstract: transistor NPN BF199
    Text: BF199 J V_ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 package. The B F 199 has a very low feedback capacitance and is intended fo r use in the ou tp u t stage o f a vision i.f. amplifier. QUICK REFERENCE D ATA Collector-base voltage open emitter


    OCR Scan     		PDF BF199 BF199 transistor NPN BF199

    Untitled

    Abstract: No abstract text available
    Text: t*r r ' F ebruary 199 2 Edition 1.0 . • — DATASHEET MB3785A BIPOLAR SW ITCHING REGULATOR CONTROLLER 4 Channels plus High-Precision, High-Frequency Capabilities DESCRIPTION The MB3785A is a PWM-based 4-channel switching regulator controller featuring high-preci­


    OCR Scan     		PDF MB3785A MB3785A 48-PIN

    transistor d 1991 ar

    Abstract: 15MH BU705DF BU705F 5BS transistor
    Text: N AMER PHILIPS/DISCRETE b^E D • bbSBTBl DD2ÔEÛ7 bEI I IAPX BU705F BU705DF I SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed sw itch in g npn pow er transistors in a S O T 199 envelope intended fo r use in ho rizo n ta l d e fle ctio n circu its o f television receivers. The BU 705D F has an integrated e fficie n cy diode.


    OCR Scan     		PDF BU705F BU705DF OT199 BU705DF BU705DF) transistor d 1991 ar 15MH 5BS transistor

    Untitled

    Abstract: No abstract text available
    Text: BF 199 NPN SILICON PLANAR EPITAXIAL HF TRANSISTOR MICRO EL.ECTRDNICS CASE T0-92E BF199 is an NPN s ilic o n p la n a r e p ita x ia l tr a n s is to r designed f o r RF a m p lifie rs and video IF a m p lifie rs in common e m itte r c o n fig u ra tio n .


    OCR Scan     		PDF T0-92E BF199 300mW 47MHz 35MHz TELEX-43510

    BF199 RF

    Abstract: BF199 HF transistor BF 199 transistor transistor NPN BF199
    Text: BF 199 NPN SILICON PLANAR EPITAXIAL HF TRANSISTOR IVIICR CD ELECTRONICS CASE T0-92E BF199 i s an NPN s il ic o n p la n a r e p ita x ia l t r a n s i s t o r designed f o r KF a m p lifie rs and video IF a m p lifie rs in common e m itte r c o n fig u ra tio n .


    OCR Scan     		PDF BF199 t0-92e 300mW 100MHz 47MHz 35MHz TELEX-43510 BF199 RF HF transistor BF 199 transistor transistor NPN BF199

    Untitled

    Abstract: No abstract text available
    Text: HW S>7 199? 19-4334; Rev. 2; 4/93 Low-Cost, iP Supervisory C ircuits F e a tu re s ♦ Guaranteed RESET Valid at Vcc = 1V The M AX705/M AX706/M AX813L provide four functions: ♦ Debounced TTL-/CMOS-Compatible Manual-Reset Input 2 An in d e p en d e n t w a tch d og o utput that goes low if


    OCR Scan     		PDF AX705/M AX706/M AX813L MAX705/MAX707/MAX813L MAX706/MAX708 200ms MIL-STD-883. MAX705

    Untitled

    Abstract: No abstract text available
    Text: June 199 8 P RELIM IN AR Y ^Ék Micro Linear ML65F16244 16-Bit Buffer/Line Driver with 3-State Outputs GENERAL DESCRIPTION FEATURES The M L 6 5 F 1 6 2 4 4 is a B iC M O S , 1 6 -b it b u ffe r/lin e d riv e r w ith 3-state outputs. This d e v ic e was s p e c ific a lly designed


    OCR Scan     		PDF ML65F16244 16-Bit

    shockley

    Abstract: 4E20-28 395 transistor clevite 4E20-8 4e20m-8 4G200M 4E20A 4J50-25 4E30-8
    Text: TRANSISTOR PA L O 1801 ALTO PAGE PLANT MILL ROAD • PALO ALTO. CALIFORNIA A D iv is io n o f C /e vite C o rp o ra tio n 4-LAYER MIL-LINE 1-99 100-499 4E20M-8 5.00 4.00 4E20M-28 4.80 4E30M-8 500-1999 E DIODES S E R I E S IN 1-99 100-499 500-1999 3.30 IN 3831


    OCR Scan     		PDF 4E20M-8 4E20M-28 4E30M-8 4E30M-28 4E40M-8 4E40M-28 4E50M-8 4E50M-28 4E100M-8 4E100M-28 shockley 4E20-28 395 transistor clevite 4E20-8 4G200M 4E20A 4J50-25 4E30-8

    transistor BF 199

    Abstract: BF 199 bf199 transistor A11A
    Text: SIEM ENS BF 199 NPN Silicon RF Transistor • For common emitter IF TV amplifier stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 199 - Q62702-F355 Pin Configuration 1 2 3 C E Package1 TO-92 B Maximum Ratings Parameter


    OCR Scan     		PDF Q62702-F355 D0bb74b 23SbGS DDbb747 00bb74fl transistor BF 199 BF 199 bf199 transistor A11A

    BF199

    Abstract: TFK U 217 B transistor BF 199 TFK 505 BF 199 transistor bf 199 lamb TFK 001 TFK 505 am TFK U 111 B
    Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon N P N Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on em itter configuration,


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code


    OCR Scan     		PDF 900MHz BFP182W Q62702-F1502 OT-343

    2SA764

    Abstract: B 1449 transistor 2SA765 2SA766 2SC1421 ep3010
    Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SA764 2SA765 Tc-25 2SA766 2SA764 B 1449 transistor 2SA765 2SA766 2SC1421 ep3010

    Untitled

    Abstract: No abstract text available
    Text: Coming Attractions m an A M P com pany Wireless Bipolar Power Transistor, 45W 1930-1990 MHz PH1920-45 V 1.00 Features • • • • • NPN Silicon Power Transistor Com m on Emitter Class AB O peration Internal Input and O u tp u t Im pedance Matching Diffused Emitter Ballasting


    OCR Scan     		PDF PH1920-45

    2SC1451

    Abstract: 2SA773 2SA772 TBB 1458 1466 HO TBB 1458 p 2sa773* Transistor
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 600pS 2SA772 300pS 2SA773 470MHi, VCC-12 Tc-25 175MHz, 2SC1451 2SA773 2SA772 TBB 1458 1466 HO TBB 1458 p 2sa773* Transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PZT 3904 NPN Silicon Switching Transistor • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3906 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3904


    OCR Scan     		PDF Q62702-Z2029 OT-223 D1E2M74 D12HM7S