SCHOTTKY semikron
Abstract: No abstract text available
Text: SBH 1520 . SBH 1540 .3 Axial lead diode High temperature schottky barrier diodes SBH 1520 . SBH 1540 Forward Current: 15 A Reverse Voltage: 20 to 40 V Features !"#$
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332h
Abstract: SEGMENT DISPLAY 312H UASM66 32.768K E 575
Text: SH67L18A 8K 4-bit Microcontroller with LCD Driver Features SH6610C-based single-chip 4-bit microcontroller with LCD driver ROM: 8K X 16 bits bank switched RAM: 1024 X 4 bits (system control register, bank switched data memory & LCD RAM) Operation Voltage Range: 1.2V - 1.7V
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SH67L18A
SH6610C-based
768KHz
4/200KHz
200KHz
768KHz
SH67L18AH
332h
SEGMENT DISPLAY 312H
UASM66
32.768K E 575
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Untitled
Abstract: No abstract text available
Text: SH66L16 16K 4-bit Microcontroller with LCD Driver Features SH6610C-based single-chip 4-bit microcontroller with LCD driver ROM: 16K X 16 bits bank switched RAM: 2K X 4 bits (system control register, bank switched data memory & LCD RAM) Operation Voltage Range: 1.2V - 1.7V
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SH66L16
SH6610C-based
768KHz
4/200KHz
200KHz
768KHz
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33dh
Abstract: reliability VP5 329H 332h 339H SEGMENT DISPLAY 312H btm 180 316H
Text: SH66L16 16K 4-bit Microcontroller with LCD Driver Features SH6610C-based single-chip 4-bit microcontroller with LCD driver ROM: 16K X 16 bits bank switched RAM: 2K X 4 bits (system control register, bank switched data memory & LCD RAM) Operation Voltage Range: 1.2V - 1.7V
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SH66L16
SH6610C-based
768KHz
4/200KHz
200KHz
768KHz
SH66L16H
33dh
reliability VP5
329H
332h
339H
SEGMENT DISPLAY 312H
btm 180
316H
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Untitled
Abstract: No abstract text available
Text: SH66L16A 16K 4-bit Low Power Micro-controller with LCD Driver Features SH6610C-based single-chip 4-bit micro-controller with LCD driver ROM: 16K X 16 bits RAM: 2016 X 4 bits - 32 System Control Register - 1872 Data Memory - 448 bits LCD RAM Operation Voltage:
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SH66L16A
SH6610C-based
200kHz
768kHz
SEG47
SEG22
SEG48
SEG23
SEG49
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lcd 5421
Abstract: IEC-60825 laser transmitter 1550 nm RIN
Text: Data Sheet October 2001 3970-Type 1550 nm Transmitter Description The 3970-type, externally modulated 1550 nm transmitter provides CATV systems integrators one of the fastest and easiest paths to customer value-added, high-performance solutions. The 1550 nm transmitter engine incorporates a
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3970-Type
3970-type,
Superio0-712-4106)
DS00-280OPTO-1
DS00-280OPTO)
lcd 5421
IEC-60825
laser transmitter 1550 nm RIN
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SB 1540 Diode
Abstract: f 1540 SB
Text: SB 1520 . SB 15100 Type Axial Lead Diode Schottky barrier rectifier diodes Forward Current: 15 A Reverse Voltage: 20 to 100 V SB 1520 . SB 15100 Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage
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Untitled
Abstract: No abstract text available
Text: Yageo corporation ALUMINUM electrolytic capacitors Miniature Aluminum Electrolytic Capacitors SB [ For Low Leakage Current ] 105°C Single-Ended Lead Aluminum Electrolytic Capacitors electrical characteristics Operating Temperature : -40° ~ +105°C Working Voltage : 6.3 ~ 100V
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002CV
120Hz)
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Untitled
Abstract: No abstract text available
Text: YAGEO CORPORATION ALUMINUM ELECTROLYTIC CAPACITORS SB [ For Low Leakage Current ] Miniature Size Aluminum Electrolytic Capacitors 105qC Single-Ended Lead Aluminum Electrolytic Capacitors ELECTRICAL CHARACTERISTICS Operating Temperature : -40q ~ +105qC Working Voltage : 6.3 ~ 100V
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105qC
4700PF
002CV
120Hz)
100Hz
C/10KHz
C/120Hz
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Untitled
Abstract: No abstract text available
Text: Yageo corporation ELECTROLYTIC CAPACITORS SB [ For Low Leakage Current ] Miniature Aluminum Electrolytic Capacitors 105°C Single-Ended Lead Aluminum Electrolytic Capacitors electrical characteristics Operating Temperature Range : -40 ~ +105°C Rated Voltage Range : 6.3 ~ 100V
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120Hz,
002CV
1000F,
1000F
120Hz
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Untitled
Abstract: No abstract text available
Text: Yageo corporation ELECTROLYTIC CAPACITORS Miniature Aluminum Electrolytic Capacitors SB [ For Low Leakage Current ] 105°C Single-Ended Lead Aluminum Electrolytic Capacitors electrical characteristics Operating Temperature Range : -40 ~ +105°C Rated Voltage Range : 6.3 ~ 100V
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120Hz,
002CV
1000F,
120Hz
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Untitled
Abstract: No abstract text available
Text: TEAPO ELECTRONIC CORPORATION ALUMINUM ELECTROLYTIC CAPACITORS SB [ For Low Leakage Current ] Miniature Size Aluminum Electrolytic Capacitors 105°C Single-Ended Lead Aluminum Electrolytic Capacitors ELECTRICAL CHARACTERISTICS Working Voltage : 6.3 ~ 100V Operating Temperature : -40° ~ +105°C
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002CV
120Hz)
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MUR1560R
Abstract: RUR1550 RUR1560 UR1550 MUR1550
Text: H SbE D • A R R M U R 1540 M UR1550 M UR1560 IS IHAS 4 3 G 2 27 1 D G M 2 3 5 3 STT R U R 1540 RUR1550 RUR1560 ‘15A Ultrafast Diode With Soft Recovery Characteristic M ay 1991 HA RR IS S E I H C O N D SE CT OR re a iu re s X 'O P ackage -ò -n TO-220AC
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UR1550
UR1560
RUR1550
RUR1560
O-220AC
MUR1540,
MUR1550,
MUR1560
RUR1540,
RUR1550,
MUR1560R
RUR1560
MUR1550
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RUR1560
Abstract: MURI560 RUR15100 RUR1550 Diode MUR1560 RUR1540 MUR1550 Silicon Diode Switching Diode 700v 600V 25A Ultrafast Diode MUR1540
Text: 2 HARRIS SbE D • 4 3 02 2 7 1 0 0 4 2 3 5 3 5TT ■ M U R 1540 MUR1550 HAS M U R 1 5 6 0 15A Ultrafast Diode With Soft Recovery Characteristic May 1991 HARRIS SEMICOND SECTOR - re a iu re s Package TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic
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H3GS271
DGME353
MURI540
RUR1540
RUR1550
MURI560
RUR1560
MUR1540,
MUR1550,
MUR1560
RUR1560
RUR15100
Diode MUR1560
MUR1550
Silicon Diode Switching Diode 700v
600V 25A Ultrafast Diode
MUR1540
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Untitled
Abstract: No abstract text available
Text: M X * C O M , IN C . • MX503 SEQUENTIAL TONE ENCODER FEATURES • CMOS Low Power Requirements • No External Prefilters Needed • OdB Signal to Noise Performance • >30dB Dynamic Range • 25 ms Typical Response Time • Quadradecimal Throughput • Automatic Repeat Tone Translation
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MX503
MX503*
16-pin
MX503QA:
MX503C:
MX503E:
MX503Z:
MX503ZS:
MX503QA
MX503C
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Untitled
Abstract: No abstract text available
Text: CYM1540 y SEMICONDUCTOR 256K x 9 Buffered SRAM M odule with Separate I/O Features Sm all PCB footprint • H igh-density 2-m egabit SRAM m odule w ith parity — 1.6 sq. in. • H igh-speed C M O S SRAMs — Access tim e o f 30 ns • Buffered a d d ress an d control inputs
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CYM1540
1540-30C
1540-35C
1540-45C
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MUR3040PT
Abstract: MUR3050PT MUR3060PT RURD1540 RURD1550 RURD1560 2774.1 RUR01560
Text: M UR3040PT M UR3050PT M UR3060PT HARRIS • H3QE271 0G424G7 ñb3 I IHAS HARRIS SEMICOND SECTOR 15A Ultrafast Dual Diode With Soft Recovery Characteristic 5bE D May 1992 • r - ; 2. 3 - 0 7 Package Features RURD1540 RURD1550 RURD1560 TO-218AC TOP VIEW U ltrafast w ith S o ft R eco very C haracteristic
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H3QH271
0G424G7
MUR3040PT,
MUR3050PT,
MUR3060PT
RURD1540,
RURD1550,
RURD1560
MUR3040PT
MUR3050PT
RURD1540
RURD1550
2774.1
RUR01560
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A83A marking
Abstract: 113A db 435A 95A 640 marking 113a LTE21009R LTE21009RA transistor 81 110 w 85 MARKING 41B marking code 41b
Text: -7^33-0^ LTE21009R LT E 21009R A ,{ PHILIPS INTERNATIONAL StE D • 7110fi2b 0041,218 Rbfl ■ PHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich
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LTE21009R
LTE21009RA
711002b
FO-41B)
LTE21009RA
A83A marking
113A db
435A
95A 640
marking 113a
transistor 81 110 w 85
MARKING 41B
marking code 41b
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Untitled
Abstract: No abstract text available
Text: TECCÔR ELE CTRONICS INC 24E D- Afl72fln 0001311 7 ~ 2 S -Z 2 > TECCOR ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 ALTERNISTORS General Description 15-40 Amps T h e se Alternistors are offered in three b a sic
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Afl72fln
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ti75b
Abstract: MB1540 MB1550 MB1520
Text: Sept. 1995 Edition 3.0b DATA SH EET FUJITSU MB1520/MB1530/MB1540/MB1550 SERIES Bi-CMOS LSI RF 1C SPECIFICATION ADVANCED SEMICUSTOM TECHNOLOGY OF SUPER PLL WITH RF SYSTEM ON LSI The Fujitsu MB1520/1530/1540/1550 series are semicustom LSI IC's based on a master slice method. Super P LL P LL and Prescaler macros and high frequency
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MB1520/MB1530/MB1540/MB1550
MB1520/1530/1540/1550
ti75b
MB1540
MB1550
MB1520
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Untitled
Abstract: No abstract text available
Text: KMM372V3200AK/AS KMM372V3280AK/AS DRAM MODULE KMM372V3200AK/AS & KMM372V3280AK/AS Fast Page Mode 32Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V320 8 0A is a 32M bit x 72 Dynamic RAM high density memory module. The
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KMM372V3200AK/AS
KMM372V3280AK/AS
KMM372V3280AK/AS
32Mx72
16Mx4,
KMM372V320
KMM372V3200AK
KMM372V3200AS
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Untitled
Abstract: No abstract text available
Text: HB56UW872EJK Series 8 ,3 8 8 ,6 0 8-w ord x 7 2 -b it H igh D en sity D yn am ic R A M M od u le HITACHI ADE-203-720A Z Rev. 1.0 Jan. 27, 1997 Description The HB56U W 872EJK belongs to 8 B yte DIMM (Dual In-line Memory M odule) fam ily, and has been developed as an optim ized main m em ory solution for 4 and 8 B yte processor applications.
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HB56UW872EJK
ADE-203-720A
HB56U
872EJK
16-bit
HB56UW
168-pin
D334RD
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Untitled
Abstract: No abstract text available
Text: A L U M IN U M E L E C T R O L Y T IC C A P A C IT O R S SB [ For Low Leakage Current ] 105 C Single-Ended Lead A lum inum E lectrolytic Capacitors ELECTRICAL CHARACTERISTICS W orking Voltage : 6.3 ~ 100V Operating Temperature :-40° ~ -H 05 °C Rate Capacitance Range : 0 .1 - 47000pF
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47000pF
002CV
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2SB1615
Abstract: 2SC4929 2SC4971 2SD2504 2SA879 2SB873 2sb161 2sc2188 2SB1537 2SB1538
Text: 118 • Package No. b^32fiS2 Applica tion Functions SS Mini Type (0 1 ) S Mini Type (05) Mini Type (010) T Mini Type New S Type (D39) (01 9 ) TO-92 (D49) M Type (D40) TO-92 NL (0 5 1 ) TO-92 L (D50) Mini Power Type (016) VcEO MT1 Type (04 2 ) MT2 Type
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A2SB1610
A2SD2472
2SB1537
2SD2357
2SB1538
12SD2358
A2SB1619
A2SD2483
A2SB1611
IA2SD2473
2SB1615
2SC4929
2SC4971
2SD2504
2SA879
2SB873
2sb161
2sc2188
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