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    EXTENDED MEMORY CONTROLLER Search Results

    EXTENDED MEMORY CONTROLLER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    EXTENDED MEMORY CONTROLLER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    htc hd2

    Abstract: htc hd2 pinouts MNSC140CORE MPC8260 MSC8103 MSC8122 MSC8122ADS MSC8122RM SC140 wireless current sensor
    Text: Freescale Semiconductor Technical Data MSC8122 Rev. 12, 4/2006 MSC8122 Quad Core 16-Bit Digital Signal Processor SC140 Extended Core SC140 Extended Core SC140 Extended Core MQBus SC140 Extended Core 128 128 SQBus Boot ROM 64 Local Bus IP Master 32 Timers Memory


    Original     		PDF MSC8122 16-Bit SC140 RS-232 htc hd2 htc hd2 pinouts MNSC140CORE MPC8260 MSC8103 MSC8122 MSC8122ADS MSC8122RM SC140 wireless current sensor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MSC8122 Rev. 10, 9/2005 MSC8122 Quad Core 16-Bit Digital Signal Processor SC140 Extended Core SC140 Extended Core SC140 Extended Core MQBus SC140 Extended Core 128 128 SQBus Boot ROM 64 Local Bus IP Master 32 Timers Memory


    Original     		PDF MSC8122 16-Bit SC140 RS-232

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MSC8122 Rev. 8, 7/2005 MSC8122 Quad Core 16-Bit Digital Signal Processor SC140 Extended Core SC140 Extended Core SC140 Extended Core MQBus SC140 Extended Core 128 128 SQBus Boot ROM 64 Local Bus IP Master 32 Timers Memory


    Original     		PDF MSC8122 16-Bit SC140 RS-232

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MSC8122 Rev. 9, 7/2005 MSC8122 Quad Core 16-Bit Digital Signal Processor SC140 Extended Core SC140 Extended Core SC140 Extended Core MQBus SC140 Extended Core 128 128 SQBus Boot ROM 64 Local Bus IP Master 32 Timers Memory


    Original     		PDF MSC8122 16-Bit SC140 RS-232

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MSC8122 Rev. 6, 5/2005 MSC8122 Quad Core 16-Bit Digital Signal Processor SC140 Extended Core SC140 Extended Core SC140 Extended Core MQBus SC140 Extended Core 128 128 SQBus Boot ROM 64 Local Bus IP Master 32 Timers Memory


    Original     		PDF MSC8122 16-Bit SC140 RS-232

    Untitled

    Abstract: No abstract text available
    Text: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB6 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216D2A-DEB6 2.65V(2.4V~2.9V) Extended


    Original     		PDF OneNAND512 KFG1216x2A-xxB6) KFG1216Q2A-DEB6 KFG1216Q2A-FEB6 KFG1216D2A-DEB6 KFG1216D2A-FEB6 KFG1216U2A-DIB6 KFG1216U2A-FIB6 63FBGA

    8044H

    Abstract: SAMSUNG 256Mb NAND Flash Qualification Report
    Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216D2A-DEB5 2.65V(2.4V~2.9V) Extended


    Original     		PDF OneNAND512 KFG1216x2A-xxB5) KFG1216Q2A-DEB5 KFG1216Q2A-FEB5 KFG1216D2A-DEB5 KFG1216D2A-FEB5 KFG1216U2A-DIB5 KFG1216U2A-FIB5 63FBGA 8044H SAMSUNG 256Mb NAND Flash Qualification Report

    onenand

    Abstract: No abstract text available
    Text: OneNAND256 KFG5616x1A-xxB5 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB5 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB5 2.65V(2.4V~2.9V) Extended


    Original     		PDF OneNAND256 KFG5616x1A-xxB5) KFG5616Q1A-DEB5 256Mb 67FBGA KFG5616Q1A-PEB5 48TSOP1 KFG5616D1A-DEB5 KFG5616D1A-PEB5 onenand

    Untitled

    Abstract: No abstract text available
    Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended


    Original     		PDF OneNAND256 KFG5616x1A-xxB6) KFG5616Q1A-DEB6 67FBGA KFG5616Q1A-PEB6 256Mb 48TSOP1 KFG5616D1A-DEB6 KFG5616D1A-PEB6

    FFA000

    Abstract: No abstract text available
    Text: APPLICATION NOTE H8SX Family Ring Buffer Processing Using Extended Repeat Area Function of the DMAC Introduction The direct memory access controller DMAC performs ring buffer processing using the extended repeat area function. Target Device H8SX/1653 Contents


    Original     		PDF H8SX/1653 REJ06B0623-0100/Rev FFA000

    MPC821

    Abstract: No abstract text available
    Text: SECTION 15 MEMORY CONTROLLER 15.1 INTRODUCTION The memory controller is responsible for the control of up to eight memory banks. It supports a glueless interface to SRAM, EPROM, flash EPROM, regular DRAM devices, self-refresh DRAMs, extended data output DRAM devices, synchronous DRAMs, and other peripherals.


    Original     		PDF MPC821

    MPC860 memory controller

    Abstract: MPC860 1513 MOTOROLA
    Text: SECTION 15 MEMORY CONTROLLER 15.1 INTRODUCTION The memory controller is responsible for the control of up to eight memory banks. It supports a glueless interface to SRAM, EPROM, flash EPROM, regular DRAM devices, self-refresh DRAMs, extended data output DRAM devices, synchronous DRAMs, and other peripherals.


    Original     		PDF MPC860 MPC860 memory controller 1513 MOTOROLA

    samsung 2GB Nand flash 121 pins

    Abstract: SLC NAND endurance 100k
    Text: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1


    Original     		PDF KFM1G16Q2M-DEB5) KFN2G16Q2M-DEB5) KFM1G16Q2M-DEB5 KFN2G16Q2M-DEB5 63FBGA samsung 2GB Nand flash 121 pins SLC NAND endurance 100k

    Untitled

    Abstract: No abstract text available
    Text: OneNAND256 KFG5616x1A-DEB6 FLASH MEMORY OneNANDTM Specification Density OneNAND256 Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG5616U1A-DIB6


    Original     		PDF OneNAND256 KFG5616x1A-DEB6) OneNAND256 KFG5616Q1A-DEB6 KFG5616D1A-DEB6 KFG5616U1A-DIB6 67FBGA /48TSOP1

    1E49Ah

    Abstract: Samsung nand MLC
    Text: OneNAND256 KFG5616x1A-DEB5 FLASH MEMORY OneNANDTM Specification Density OneNAND256 Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG5616D1A-DEB5 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG5616U1A-DIB5


    Original     		PDF OneNAND256 KFG5616x1A-DEB5) OneNAND256 KFG5616Q1A-DEB5 KFG5616D1A-DEB5 KFG5616U1A-DIB5 67FBGA /48TSOP1 1E49Ah Samsung nand MLC

    KFG1216x2A-xxB5

    Abstract: 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report 63FBGA KFG1216D2A KFG1216Q2A KFG1216U2A
    Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND512 KFG1216x2A-xxB5) 512Mb KFG1216Q2A 63FBGA /63FBGA KFG1216D2A KFG1216U2A KFG1216x2A-xxB5 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report KFG1216D2A KFG1216Q2A KFG1216U2A

    Flash Memory datasheet mmc

    Abstract: TCA 785 application note mlc nand flash lsb msb SLC NAND endurance 100k KFN2G16Q2M-DEB5 samsung "nor flash" sensing Samsung oneNand Mux TCA 785 63FBGA KFM1G16Q2M-DEB5
    Text: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0


    Original     		PDF KFM1G16Q2M-DEB5) KFN2G16Q2M-DEB5) KFM1G16Q2M-DEB5 63FBGA KFN2G16Q2M-DEB5 80x11 KFG1G16Q2M) Flash Memory datasheet mmc TCA 785 application note mlc nand flash lsb msb SLC NAND endurance 100k KFN2G16Q2M-DEB5 samsung "nor flash" sensing Samsung oneNand Mux TCA 785 KFM1G16Q2M-DEB5

    SLC NAND endurance 100k

    Abstract: No abstract text available
    Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0


    Original     		PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA SLC NAND endurance 100k

    samsung 2GB Nand flash 121 pins

    Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
    Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1


    Original     		PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA samsung 2GB Nand flash 121 pins samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash

    SAMSUNG 256Mb NAND Flash Qualification Report

    Abstract: SAMSUNG 256Mb NAND Flash Qualification Reliability samsung toggle mode NAND Samsung Electronics. NAND flash memory BLOCK NAND Flash Qualification Reliability samsung dual lcd 63FBGA KFG5616D1M-DEB KFG5616Q1M
    Text: OneNAND256 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND256 Part No. VCC core & IO Temperature PKG KFG5616Q1M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/48TSOP1 KFG5616D1M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/48TSOP1 KFG5616U1M-DIB 3.3V(2.7V~3.6V)


    Original     		PDF OneNAND256 KFG5616Q1M-DEB 63FBGA /48TSOP1 KFG5616D1M-DEB KFG5616U1M-DIB SAMSUNG 256Mb NAND Flash Qualification Report SAMSUNG 256Mb NAND Flash Qualification Reliability samsung toggle mode NAND Samsung Electronics. NAND flash memory BLOCK NAND Flash Qualification Reliability samsung dual lcd KFG5616D1M-DEB KFG5616Q1M

    am2971

    Abstract: Dynamic Memory Refresh Controller
    Text: Am2970 Dynamic Memory Timing Controller ADVANCED INFORMATION DISTINCTIVE CHARACTERISTICS Provides complete tinning control for 64K/256K memory systems which utilize the Am2968 Dynamic Memory Controller Supports extended cycle timing needed for byte-write operations


    OCR Scan     		PDF Am2970 64K/256K Am2968 512-cycle) 24-pin Am2970 am2971 Dynamic Memory Refresh Controller

    WE VQE 11 E

    Abstract: WE VQE 24 E AM2970
    Text: 1 . r ,/ Am2970 Dynamic Memory Timing Controller ^T'f v o 1A '-* ' A , PRELIMINARY > 3 to DISTINCTIVE CHARACTERISTICS Provides complete timing control for 64K/256K memory systems which utilize the Am2968 Dynamic Memory Controller Supports extended cycle timing needed for byte-write


    OCR Scan     		PDF Am2970 64K/256K Am2968 512-cycle) Am2970 AIS-B-15M-02/86-0 WE VQE 11 E WE VQE 24 E

    Untitled

    Abstract: No abstract text available
    Text: Am2970 a Dynamic Memory Timing Controller é V ,T t > i 1A ^ J JL PRELIMINARY DISTINCTIVE CHARACTERISTICS Provides complete timing control for 64K/256K memory systems which utilize the Am2968 Dynamic Memory Controller Supports extended cycle timing needed for byte-write


    OCR Scan     		PDF Am2970 64K/256K Am2968 512-cycle) Am2970 AIS-B-15M-02/86-0

    dwa 108 a

    Abstract: 62458 621-4G dwa 108 IM6100 IM6102 IM6102-1IDL IM6102-1IPL IM6102-AIPL IM6102-IPL
    Text: D M im IM6102 Memory Extension/ DMA Controller/ Interval Timer MEDIC FEATURES GENERAL DESCRIPTION • Provides Extended Memory Address to 32K Words The IM6102 is a multi-function peripheral controller chip incorporating functions such as memory exten­ sion, direct memory access control, and a programmabje real time clock.


    OCR Scan     		PDF IM6102 12-Bit IM6100 IM6102 dwa 108 a 62458 621-4G dwa 108 IM6102-1IDL IM6102-1IPL IM6102-AIPL IM6102-IPL