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    EXCEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R5F56604ADFM#10 Renesas Electronics Corporation 32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply Visit Renesas Electronics Corporation
    R5F56604AGFM#10 Renesas Electronics Corporation 32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply Visit Renesas Electronics Corporation
    R5F56604BDFM#10 Renesas Electronics Corporation 32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply Visit Renesas Electronics Corporation
    R5F56604BGFM#10 Renesas Electronics Corporation 32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply Visit Renesas Electronics Corporation
    R5F56604CDFN#10 Renesas Electronics Corporation 32-bit Microcontrollers with High Performance and Excellent Noise Tolerance for 5V Power Supply Visit Renesas Electronics Corporation
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    Panasonic Electronic Components EXC-ELSA39

    FERRITE BEAD 80 OHM AXIAL 1LN
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    Panasonic Electronic Components EXC-ELSA35

    FERRITE BEAD 50 OHM AXIAL 1LN
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    Panasonic Electronic Components EXC-ELDR35C

    FERRITE BEAD 90 OHM AXIAL 1LN
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    Panasonic Electronic Components EXC-ELSR35T

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    Panasonic Electronic Components EXC-ELSA35V

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    EXCEL Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    0009-190-000-40 Excelitas Technologies MACRO-CCD-LENS 0.3X F/3.5 Original PDF
    0009-190-000-41 Excelitas Technologies MACRO-CCD-LENS 0.3X F/5.6 Original PDF
    0009-191-000-40 Excelitas Technologies MACRO-CCD-LENS 0.5X F/5.6 Original PDF
    0009-191-000-41 Excelitas Technologies MACRO-CCD-LENS 0.5X F/8.0 Original PDF
    0009-192-000-41 Excelitas Technologies MACRO-CCD-LENS 1X F/4.0 Original PDF
    0009-192-000-42 Excelitas Technologies MACRO-CCD-LENS 1X F/5.6 Original PDF
    0009-193-000-40 Excelitas Technologies MACRO-CCD-LENS 2X F/4.4 Original PDF
    0009-194-000-40 Excelitas Technologies MACRO-CCD-LENS 4X F/5.2 Original PDF
    0009-243-000-40 Excelitas Technologies INSPEC.X M 50MM F/1.4 Original PDF
    0009-243-000-42 Excelitas Technologies INSPEC.X M 50MM F/1.4 NIR Original PDF
    0019-002-000-50 Excelitas Technologies INSPEC.X L 60MM F/4.0 Original PDF
    0019-003-000-50 Excelitas Technologies INSPEC.X L 100MM F/4.0 Original PDF
    0020-001-000-40 Excelitas Technologies MEVIS-C 35MM F/1.6 Original PDF
    0020-002-000-40 Excelitas Technologies MEVIS-C 25MM F/1.6 Original PDF
    0020-002-000-45 Excelitas Technologies MEVIS-C TRAFFIC 25MM F/1.6 Original PDF
    0020-003-000-40 Excelitas Technologies MEVIS-C 50MM F/1.8 Original PDF
    0020-004-000-40 Excelitas Technologies MEVIS-C 16MM F/1.6 Original PDF
    0020-005-000-40 Excelitas Technologies MEVIS-C 12MM F/1.8 Original PDF
    0020-007-000-20 Excelitas Technologies MEVIS-CF 25MM F/1.6 Original PDF
    0020-007-000-21 Excelitas Technologies MEVIS-CF 25MM F/4.0 Original PDF
    ...

    EXCEL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2sc3310

    Abstract: No abstract text available
    Text: 2SC3310 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm SW ITCH IN G REGULATOR A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. HIGH SPEED D C-DC CONVERTER APPLICATIONS. • • Excellent Switching Times : tr =1.0//s (Max.), tf=1.0/us (Max.) at Iç = 4A


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    2SC3310 2sc3310 PDF

    C 34 F

    Abstract: 1SV274 D234
    Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package


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    1SV274 C25V/C28V 470MHz C 34 F 1SV274 D234 PDF

    2SD1294

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain


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    2SD1294 2SD1294 PDF

    TRANSISTOR Marking XB PNP

    Abstract: YTS3906
    Text: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity


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    YTS3906 -50mA, YTS3904 300ne TRANSISTOR Marking XB PNP YTS3906 PDF

    TLE2062B

    Abstract: No abstract text available
    Text: TLE2062, TLE2062A, TLE2062B, TLE2062Y EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE jiPOW ER DUAL OPERATIONAL AM PLIFIERS D3346, OCTOBER 1989 - REVISED NOVEMBER 1991 availablefeatures • Excellent Output Drive Capability V 0 = ± 2.5 V Min at R|_ = 100 Q , VC C ± = ± 5 V


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    TLE2062, TLE2062A, TLE2062B, TLE2062Y D3346, TLE2062B PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4157 SWITC HIN G REGULATOR AND HIGH VOLTAGE SWITCHI NG INDUSTRIAL APPLICATIONS Unit in nun APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. . Ç63 .2 ± 0 .2 1 5-9MAX. . Excellent Switching Times : tr= 0 . 5 y s M a x . , tf=0.5(Js(Max.) (lc=5A)


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    2SC4157 lit50V PDF

    2SC31

    Abstract: m15t
    Text: 2SC31 22 SILICQN NPN EPITAXIAL PLANAR TYPE t r a n s is t o r T V V H F RF A M P LIF IE R A PP LIC A T IO N S . FEATURES : • High Gain : Gpe = 24dB Typ. (f=200M Hz) • Low Noise : NF = 2.0dB (Typ.) (f=200MHz)Excellent Forward AGC Characteristics.


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    2SC31 200MHz) 2SC3122 50MHz m15t PDF

    JFET 4405

    Abstract: tle20641
    Text: TLE2064M, TLE2064AM EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE UPOWER QUAD OPERATIONAL AMPLIFIERS D3367, N O V EM B ER 1989 - R E V IS E D O C T O B E R 1991 available features Excellent Output Drive Capability V 0 = ± 2.5 V Min at R L = 100 £2, VCC± = ± 5 V


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    TLE2064M, TLE2064AM D3367, TLE2064M andTLE2064AM JFET 4405 tle20641 PDF

    TLRA130B

    Abstract: No abstract text available
    Text: T O S H IB A íD IS C R E T E /O P T O } 9 B E B 9097250 TOSHIBA DISCRETE/OPTO 99D 17195 D-p^l-ai TLRAI3 0 GaAIAs RED LIGHT EMISSION FEATURES: • Excellent Bright Red • All Plastic Mold Type: Colorless Clear Lens • Low Drive Current, Practical Brightness are Achieved


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    OperatiRA130-C Ipa20mA 20ihA TLRA130B PDF

    TA7060

    Abstract: TA7060AP ta706
    Text: TOSHIBA-, EL ECT RONIC DE 9097247 TOSHIBA. ÏT~| TCHTSM? ñ | ELECTRONIC 02E 16872 D TA7060AP FOR FM IF AMPLIFIER Unit in mm FOR TV SIF AMPLIFIER 17.8 M A X . Recommended for Wide and Narrow Bands Amplifier. . Excellent FM/IF Limiter Circuit. MAXIMUM RATINGS Ta=25 C


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    TA7060AP 400Hz, 75kHz 75kHz, 75kHz TA7060 TA7060AP ta706 PDF

    2SC3475

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3475 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES : . Excellent Switching Times : tf=0.5tis Max. (Ic=2A) . Low Collector Saturation Voltage : VCE(sat)=0.6V(Max.) (Ic=2A)


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    2SC3475 T0-220 2SC3475 PDF

    TLC2425

    Abstract: TLE24251
    Text: TLE2425, TLE2425Y PRECISION VIRTUAL GROUNDS SLOSD65B - MARCH 1991 - REVISED AUGUST 1995 Excellent Regulation Characteristics - Output Regulation -4 5 nV Typ at l0 = 0 to -1 0 mA +15 nV Typ at Iq - 0 to +10 mA - Input Regulation = 1.5 ¿iV/V Typ Low-lmpedance Output. . . 0.007512 Tÿp


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    TLE2425, TLE2425Y SLOSD65B O-226AA TLE2425 prec065B VCM83 20MEG 25KEG 030E3 TLC2425 TLE24251 PDF

    2N4403

    Abstract: No abstract text available
    Text: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage


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    2N4403 -100nA 100nA -150mA, -15mA 2N4401 X10-4 2N4403 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TEN TATIVE TLRA291P T O S H IB A LED L A M P G a A i As RED LIGHT EM ISS IO N TLRA291P PA NEL CIRC U IT IN D IC A T O R • • • • U n it in m m Excellent Bright Red All Plastic Mold Type : Colorless Clear Lens Low Drive Current Plastic Molded Colorless Clear Lens Provides for High Contrast


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    TLRA291P PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 ST0R0B0 FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in ram . High DC Current Gain and Excellent hFE Linearity : hFE(l)=140~450 (VCE=2V, : h F E(2)=70(Min.) Ic =0.5A) (VC E=2V, IC=4A) . Low Saturation Voltage


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    2SC3671 Q55-Q0S 10tnA, PDF

    9701455-S-J1

    Abstract: APH184C
    Text: APH184C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 27 to 31 GHz • Linear gain: >10 dB • Pout > 3 0 dBm • Unconditionally stable • Balanced design provides excellent input and output VS WR • DC power: 4.5 V at 1.1 Amps


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    APH184C APH184C SA051 9701455-S-J1 9701455-S-J1 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SV282 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 282 Unit in mm CATV TUNING • • • • High Capacitance Ratio : C2 v / C 2 5 V = 12.5 TYP. Low Series Resistance : rs = 0.6H (TYP.) Excellent C-V Characteristics, and Small Tracking Error.


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    1SV282 0014g PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC4738 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V C E O = 50V, Ic = 150mA (Max.) Excellent hpg Linearity : hpE (I q = 0.1mA) / hpg (I q = 2mA) = 0.95 (Typ.)


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    2SC4738 150mA 2SA1832 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3547A silicqn npn epitaxial planar type transistor TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • Transition Frequency is High and Dependent on C urrent Excellently. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage


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    2SC3547A PDF

    2SC2319

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2319 Unit in mm HIGH POWER AMPLIFIER FOR CATV APPLICATIONS. FEATURES : . Hide Band and High Gain for Class A Amplifier. . Excellent Cross Modulation Characteristics. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING


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    2SC2319 100mA 250MHz 800MHz 2SC2319 PDF

    TA7630P

    Abstract: bass treble volume control for 2 channel using IR
    Text: TOSHIBA TA7630P D U AL. VOLUMC/BALArJCE/TOriE C A S S / T R E D L C DC CONTROL IC The TA7630P is DC controlled dual volume, balance, tone (Bass, treble) IC. As these dual channels are constructed on one chip, this IC is excellent in pair characteristic.


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    TA7630P TA7630P 100Hz 20kHz RATINGS15 bass treble volume control for 2 channel using IR PDF

    dallas 2505

    Abstract: LT1009M LM136-2.5
    Text: LT1009 2.5-V INTEGRATED REFERENCE CIRCUIT D3191, MAY 1987-REVISED AUGUST 1991 Excellent Temperature Stability LT1009C, LT1009I. . . D PACKAGE TOP VIEW Initial Tolerance . . . 0.2% Max NC[ NC[ N C[ AN O D E[ Dynamic Impedance . . . 0.6 Q Max Wide Operating Current Range


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    LT1009 D3191, 1987-REVISED LM136 LT1009C, LT1009I. LT1009M ----LT1009 LT1084 dallas 2505 LT1009M LM136-2.5 PDF

    2SC4658

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC4658 HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS Unit in mm FEATURES: • Excellent hj-E linearity : hFE=100~320 at VCE=1V, IC=1A • Low Collector Saturation Voltage : vCE sat = 0 -*v (Max.) at Ic=3A, Ib =0.15A


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    2SC4658 2SA1794 Ta-25 2SC4658 PDF

    2SC3257

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE SW ITCH IN G REGULATOR A N D HIGH VOLTAG E SW ITCHIN G APPLICATIONS. 2SC3257 INDUSTRIAL APPLICATIONS Unit in mm 1 0 .3 M A X . HIGH SPEED D C-DC CO NVERTER APPLICATIONS. • • Excellent Switching Times : tr = 1.0/is Max. , tf=1.0/us (Max.) at Iç = 6A


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    2SC3257 2SC3257 PDF