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    EVI 330 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    TRANSISTOR 434

    Abstract: BFP650 HOME AUTOMATION USING GSM AN196 BFR380F bf 434 BFP450 ag 20 taiyo BFR380 RF MODULE 434Mhz
    Text: BF R38 0F Dri v er A m pl i fer fo r 434 M Hz I S MBan d A ppl i c ati ons Appl i c ati o n N ote A N 196 Revision: Rev1.1 2010-09-28 RF and P r otec ti on D evi c es Edition 2010-09-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


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    AN196, BFR380F AN196 TRANSISTOR 434 BFP650 HOME AUTOMATION USING GSM AN196 BFR380F bf 434 BFP450 ag 20 taiyo BFR380 RF MODULE 434Mhz PDF

    Cordless Phone circuit diagram

    Abstract: 2.4GHz Cordless Phone circuit diagram BFP750 cordless phone circuit S parameters of 5.8 GHz transistor SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR RF MODULE CIRCUIT DIAGRAM dect Cordless Phone system block diagram murata wifi saw filter cordless phone ic
    Text: BF P750 BF P750 a s a Dri ve r A mpl i fi er for 5.8 G Hz Cor dl es s P hon e A ppl i c a t i ons Appl i c ati o n N ote A N 246 Revision: Rev 1.1 2010-09-24 RF and P r otec ti on D evi c es Edition 2010-09-24 Published by Infineon Technologies AG 81726 Munich, Germany


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    limitation111 5000MHz BFP750 AN246, BFP750 AN246 Cordless Phone circuit diagram 2.4GHz Cordless Phone circuit diagram cordless phone circuit S parameters of 5.8 GHz transistor SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR RF MODULE CIRCUIT DIAGRAM dect Cordless Phone system block diagram murata wifi saw filter cordless phone ic PDF

    tea 1601 t

    Abstract: tea1601 TEA1601 PHILIPS tea 1601 C2026 K C2026 Y transistor C2026 2SK2810 J10MM AN00013
    Text: APPLICATION NOTE 26kV/30W High Voltage Generator with TEA1601 Resonic controller AN00013 Philips Semiconductors Philips Semiconductors O:; ,-+, :308%+ +)2)6%836 ;-8, 8)% 6)732-' '3286300)6 Application Note AN00013 Abstract 8LMW VITSVX HIWGVMFIW E ,MKL :SPXEKI +IRIVEXSV ; VIWSRERX 7147 JSV QSRMXSV ERH XIPIZMWMSR ETTPMGEXMSR FEWIH YTSR XLI 8)%


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    26kV/30W TEA1601 AN00013 tea 1601 t tea1601 TEA1601 PHILIPS tea 1601 C2026 K C2026 Y transistor C2026 2SK2810 J10MM AN00013 PDF

    HDMI SWITCH SCHEMATIC

    Abstract: No abstract text available
    Text: PRELIMINARY CM20LT Features • • • • • • Product Description Long HDMI cable support with integrated I2C accelerator Low Capacitance DDC for HDMI Compliance Translates I2C level to CMOS level on DDC line Overcurrent output protection for Source


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    CM20LT 2006California CM20LT HDMI SWITCH SCHEMATIC PDF

    NGA-689

    Abstract: AGB3307 GA68
    Text: Quick Reference Guide Using the AGB3307 as a Replacement for the NGA-689 The AGB3307 InGaP HBT Gain Block from ANADIGICS is a wideband device with high linearity, low noise and low distortion that can be used as a replacement for the NGA-689 device from Sirenza Microdevices. Both


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    AGB3307 NGA-689 NGA-689 OT-89 GA-689 GA68 PDF

    W88W

    Abstract: NGA-589 AGB3303 ww39
    Text: Quick Reference Guide Using the AGB3303 as a Replacement for the NGA-589 The AGB3303 InGaP HBT Gain Block from ANADIGICS is a wideband device with high linearity, low noise and low distortion that can be used as a replacement for the NGA-589 device from Sirenza Microdevices. Both


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    AGB3303 NGA-589 NGA-589 OT-89 GA-589 W88W ww39 PDF

    AGB3302

    Abstract: NGA-489 ga649
    Text: Quick Reference Guide Using the AGB3302 as a Replacement for the NGA-489 The AGB3302 InGaP HBT Gain Block from ANADIGICS is a wideband device with high linearity, low noise and low distortion that can be used as a replacement for the NGA-489 device from Sirenza Microdevices. Both


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    AGB3302 NGA-489 NGA-489 OT-89 GA-649 ga649 PDF

    10uf electrolytic

    Abstract: MS-012AA SC1540 SC1540A
    Text: SC1540 A 300mA And 500mA Low Dropout Voltage Regulators With Enable POWER MANAGEMENT Description PRELIMINARY Features u u u u The SC1540 and SC1540A are high performance low dropout positive voltage regulators designed for use in applications where power management is critical, such


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    SC1540 300mA 500mA SC1540A 300mA. 10uf electrolytic MS-012AA PDF

    MCH18

    Abstract: MCR03 SPA-1118 SPA-1118Z TAJB106K020R
    Text: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


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    SPA-1118 SPA-1118 SPA-1118Z EDS-101427 MCH18 MCR03 SPA-1118Z TAJB106K020R PDF

    EE80251S1-0000-A99

    Abstract: No abstract text available
    Text: SUNON SPECIFICATION FOR APPROVAL . j CUSTOMER DESCRIPTION DC BRUSHLESS FAN DIMENSIONS 80X80X25 mm MODEL EE80251SI-0000-A99 SUNON SPEC. NO. D08029840G-00 CUSTOMER APPROVAL NO. APPROVED BY CUSTOMER AUTHORIZED / 41 DRAWN Evi r J y CHECKED APPROVED 4 /3


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    80X80X25 EE80251S1-0000-A99 D08029840G-00 Inch-H20 3500ppm 4000ppm 20ppm 100ppm C10-13, 100ppm PDF

    MC10H181

    Abstract: MC1672
    Text: B PIN ASSIGNMENT oi ÿ J J i 'è S Z 2 n n n n n n n n < in i i i i i c s s i 350 270 1 Z M m i i i i i i i i i c i c <0 C X X C C at ^ in o o> o j evi o i o i o> oi CO oi I I I O) O ^ 9 r N N N I i i m oi OJ oi i I <- CN CO CO evi CN CM* eg fx. CN CN i I I i


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 131,072x18 262,144x18 PRELIMINARY IDT72V295 IDT72V2105 Irtegiated D eviœ Technology, lie . FEATURES: • Choose among the following memory organizations: IDT72V295 131,072x 18 IDT72V2105 262,144x 18 • Pin-compatible with the IDT72V255/72V265 and the


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    072x18 144x18 IDT72V295 IDT72V2105 IDT72V2105 IDT72V255/72V265 IDT72V275/72V285 PN64-1) 72V295 PDF

    Untitled

    Abstract: No abstract text available
    Text: Æutran PRODUCT D EVI CE S .I NC . N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRONICS WAY • WEST P ALM BEACH, FLORIDA 33407 TEL: 407 8 4 8 - 4 3 1 1 • TLX: 51-343S « F A X : (407) 863-5946 ABSOLUTE MAXIMUM 1000V, 4.4A, 4 . on RATINGS PARAMETER UNITS SYMBOL


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    51-343S A47-1 PDF

    72V3680

    Abstract: No abstract text available
    Text: Irtegiated D eviœ Technology, lie . 3.3 VOLT HIGH-DENSITY SUPERSYNC II 36-BIT FIFO 4,096 x 36 8,192 x 36 16,384x36 32,768 x 36 65,536 x 36 131,072x36 FEATURES: • Choose among the following memory organizations: IDT72V3660 4,096 x 36 IDT72V3670 8 ,1 9 2x3 6


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    36-BIT 384x36 072x36 IDT72V3660 IDT72V3670 IDT72V3680 IDT72V3690 IDT72V36100 IDT72V36110 72V3680 PDF

    MX23256

    Abstract: MX23256-15PC 27256 EPROM 25256 tny 178 tm 1640
    Text: MACRONIX 34Ê INC MX23256/57 D • 5bööööE DDQD17Q 3 .EVI p r e l im in a r y 3 2 ,7 6 8 X 8 STATIC READ ONLY MEMORY T ^ - g - is FEATURES DESCRIPTION . 32,768 X 8-bit organization . Access time - 150 ns max . Current-Operating; 80 mA max Standby: 20 mA max


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    DDQD17Q MX23256/57 28-pin MX23256 MX23257 MX23256/57 000sq. MX23256-15PC 27256 EPROM 25256 tny 178 tm 1640 PDF

    Untitled

    Abstract: No abstract text available
    Text: REV. R EVI SI ON S ECN NO. A DRN. CKD. APP. NEW RELEASE DATE M.C. >— . 0 5 0 TYP 12 PLCS . 1 0 0 TYP; 12 PLCS .692 ± .0 0 7 . 0 7 9 D I A NOM MOUNTING P I N S TYP; 4 PLCS . 1 4 0 ± . 0 0 3 —i TYP T ~ r 0 . 0 7 6 ±.002 TYP; 4 PLCS . 1 7 5 TYP 1 2 80 ± . 0 0 3 _


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    12-ELEMENT PDF

    XC-880-A

    Abstract: NSM4000A NSM3915 NSM4000 5252 f 1101 PAGE 29 National Semiconductor CAT 84 XC-556-R nsm1416 NSM3914 XC-88-PD
    Text: Z CCUj OS II o iA a. evi e o c o ^ "'3 '^ '^ r^ -^ '^ r'» -^ '^ -« 3 -T i-^ -^ i-in in i'« -r''r'-C M e M C \ic \je \ic M C M e \ic N C M C \jc N c v jc M e M C M C M c \jc o o o c o e o o o e o c o o o e o o o c o e o e o c o e o o o c b c ò '-'-’- ’- T - ' - T - i - T - i - i - T - i - i - T - i - i n i n n M M n w w w n e o c o e o m w w c o w n n n n w c o n n c o n n w c o w n n M c o n m M c o c o '


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    nsl6154 mv5154 nsl6252 mv5252 nsl6253 mv5253 nsl6254 mv5254 nsl6352 mv5352 XC-880-A NSM4000A NSM3915 NSM4000 5252 f 1101 PAGE 29 National Semiconductor CAT 84 XC-556-R nsm1416 NSM3914 XC-88-PD PDF

    XC-554-R

    Abstract: NSM3914 NSM4000A XC-556-R NSM3915 XC-55-PC nsm1416 NSM-1416 NSM4000 nsm39148
    Text: Z o iA a. evi C CUj OS II e o c o ^ "'3 '^ '^ r^ -^ '^ r'» -^ '^ -« 3 -T i-^ -^ i-in in i'« -r''r'-C M e M C \ic \je \ic M C M e \ic N C M C \jc N c v jc M e M C M C M c \jc o o o c o e o o o e o c o o o e o o o c o e o e o c o e o o o c b c ò '-'-’- ’- T - ' - T - i - T - i - i - T - i - i - T - i - i n i n n M M n w w w n e o c o e o m w w c o w n n n n w c o n n c o n n w c o w n n M c o n m M c o c o '


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    nsl6154 mv5154 nsl6252 mv5252 nsl6253 mv5253 nsl6254 mv5254 nsl6352 mv5352 XC-554-R NSM3914 NSM4000A XC-556-R NSM3915 XC-55-PC nsm1416 NSM-1416 NSM4000 nsm39148 PDF

    kt 784

    Abstract: ci 4081 L 7206 80651 IR 9530
    Text: H MS— m M ICITiSGrni PfS^is-sï^ is-y7aefcrt«toçy 140 Com m erce Drive T e l: 2 1 5 6 3 1 -9 8 4 0 1893M013 co Dp 1u 3m3 1i RF & MICROWAVE TRANSISTORS UHF SMALL SIGNAL . . « . HIGH F fn - 6 GHz VERY LOW NOISE ALL GOLD METALLIZATION HERMETIC PACKAGE


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    SD1331 SD1331 kt 784 ci 4081 L 7206 80651 IR 9530 PDF

    11ES 04

    Abstract: ph 77 H-18 W-10 FCR48 IT 8755 E
    Text: IC dependence of oscillating characteristics uPD784038GC. FCR4.0MC5 - STD Room Temp. Vdd CV3 5 Item a*e Rd Cohml 3300 UPD784038GC. - H-10 FCR4.0MC5 Vdd- 5 CV] (Flg.a-d) Ta- 20 CdegJ Typical Daaping re»I«tance(Rd) dependence of osci lilting characteristic!


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    uPD784038GC 94039GC. UPD784038GC. 11ES 04 ph 77 H-18 W-10 FCR48 IT 8755 E PDF

    TC-2511

    Abstract: tv horizontal output number 2SD1709 m 150 diode
    Text: C o n tin u e d fro m preceding page. Absolute Maamum RaUngsT,= 25"C Type •.Case ■. Applications VcBO Vceo V sbq Ic Kiectriul Chuacurwtica/T,= 25t taso Ti *TC=•2511 Number fens V« au ] Vcs m m £V3 fA] IWj [Ai [VI T0220 T0220 High-Definition Display Hor. Def. Output


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    2SC3590 2SC3591 2SC4075 02SA1696 02SC4473 T0220 T0220ML TC-2511 tv horizontal output number 2SD1709 m 150 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: cv V A N A I M A M D T FINAL C 0M 'L:-7/10/12/15 IND:-10/12/15/20 M A C H 5 -5 1 2 /M A C H 5 L V -5 1 2 I S C O M P A N Y MACH5-51 2/1 20-7/10/1 2/1 5 MACH5-512/192-7/10/12/15 MACH5-512/160-7/10/12/15 MACH5-512/256-7/10/12/15 MACH5-512/184-7/10/12/15 MACH5LV-512/120-7/10/12/15


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    MACH5-51 MACH5-512/160-7/10/12/15 MACH5-512/192-7/10/12/15 MACH5-512/256-7/10/12/15 MACH5LV-512/160-7/10/12/15 MACH5LV-512/184-7/10/12/15 MACH5-512/184-7/10/12/15 MACH5LV-512/120-7/10/12/15 MACH5LV-512/192-7/10/12/15 BGD352 PDF

    ICX404AL

    Abstract: sony ccd 1080 ccd sony super HAD II super had ccd H01-H02 ACXD1267AN X492 ZE12 ccd sony super HAD 2 ccd sony super HAD
    Text: SO N Y ftÄ 6 m m ICX404AL 1 / 3 1 ! E IA Él If ST IC X 404A L{iEIA ^^:i7)^Ä 6m m ( l / 3 M ) Ê H tf T * * # ^ 7 C Ü L /c > i > ? 7 'f ^ C C D ^ f ö t i f f # i'C l'o « p°ICX054BL^^L, 1/ > V , S/N& 7 >f -)V YMMWifrlti Jgjg, * 5 7, D LtLtZo "TIS& H -Í- '> -V 7 ? f ë f ê ÿ ^ L Í 't o


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    ICX404AL ICX404AL PdPICX054BL^ tlCX054BLifc) -20dB jlCX054BLJt) flGX054BLj J00606D3Z sony ccd 1080 ccd sony super HAD II super had ccd H01-H02 ACXD1267AN X492 ZE12 ccd sony super HAD 2 ccd sony super HAD PDF

    Untitled

    Abstract: No abstract text available
    Text: PANASONIC INDL/ELEK -CIC> 72 6932852 P ANA SON IC ] F § b c]32ßS2 GOGbMAD 7 f " IND LtELECTRON IC 72C 0 64 8 0 D _ > Tan 3304 M N 3 3 4 Æ ) 5 1 2 & S fë f|J± B B D 512-Stage U lt r a L o w V o ltag e O peration B B D H M N 3304 ü ia-i£K&512fô


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    512-Stage MN3304 256msâ PDF