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    EVERSPIN TECHNOLOGIES Search Results

    EVERSPIN TECHNOLOGIES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-SATDRIVEX2-001 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-001 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 1m Datasheet
    CS-SATDRIVEX2-002 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-002 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 2m Datasheet
    CS-SATDRIVEX2-000.5 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-000.5 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 0.5m Datasheet
    CS-SASDDP8282-000.5 Amphenol Cables on Demand Amphenol CS-SASDDP8282-000.5 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 0.5m Datasheet
    CS-SASDDP8282-001 Amphenol Cables on Demand Amphenol CS-SASDDP8282-001 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 1m Datasheet

    EVERSPIN TECHNOLOGIES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MR256A08B

    Abstract: MR256A08BCYS35 32KX8
    Text: MR256A08B 32Kx8 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System


    Original     		PDF MR256A08B 32Kx8 20-years 44-TSOP 48-BGA MR256A08B MR256A08BCYS35

    MR1A16ACMA35

    Abstract: mram 128Kx16 MR1A16ACYS35 MR1A16AVYS35 MR1A16AYS35
    Text: MR1A16A 128Kx16 MRAM Memory Features •Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System


    Original     		PDF MR1A16A 128Kx16 20-years 44-TSOP 48-BGA MR1A16ACMA35 mram MR1A16ACYS35 MR1A16AVYS35 MR1A16AYS35

    MR2A16A

    Abstract: MR2A16ACYS35R mr2a16acma35 MR2A16AMA35 MR2A16AYS35 MR2A16ACYS35 MR2A16AVYS35 400-mil
    Text: MR2A16A 256Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System


    Original     		PDF MR2A16A 256Kx16 20-years 44-TSOP 48-BGA MR2A16A MR2A16ACYS35R mr2a16acma35 MR2A16AMA35 MR2A16AYS35 MR2A16ACYS35 MR2A16AVYS35 400-mil

    MR2A08A

    Abstract: No abstract text available
    Text: MR2A08AM FEATURES 512K x 8 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant TSOPII package • AEC-Q100 Grade 1 Automotive Temperature -40 to +125 °C


    Original     		PDF MR2A08AM 20-years AEC-Q100 MR2A08AM 304-bit CH-409 1-877-347-MRAM EST0560 MR2A08A

    MR0A08B

    Abstract: MR0A08BC MR0A08BCYS35R
    Text: MR0A08B FEATURES 128K x 8 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR0A08B 20-years MR0A08B 576-bit MR0A08B, MR0A08BC MR0A08BCYS35R

    MR256D08B

    Abstract: No abstract text available
    Text: MR256D08B Dual Supply 32K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature


    Original     		PDF MR256D08B 20-years MR256D08B 144-bit

    MR2A16AMYS35

    Abstract: MR2A16A MR2A16AMA35
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A16A AEC-Q100 MR2A16A 304-bit MR2A16AMYS35 MR2A16AMA35

    Untitled

    Abstract: No abstract text available
    Text: MR0D08B Dual Supply 128K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature


    Original     		PDF MR0D08B 20-years MR0D08B 576-bit EST370

    MR20H40

    Abstract: mr20h40cdf MR25H40
    Text: MR20H40 / MR25H40 MR20H40 - 50MHz/20ns tSCK Commercial and Industrial Temp Range 4Mb SPI Interface MRAM MR25H40 - 40MHz/25ns tSCK (Industrial and AEC-Q100 Grade 1 Temp Range) 4Mb SPI Interface MRAM For more information on product options, see “Table 16 – Ordering Part Numbers” on page 24.


    Original     		PDF MR20H40 MR25H40 50MHz/20ns MR25H40 40MHz/25ns AEC-Q100 Table16­ MR20H40. mr20h40cdf

    Untitled

    Abstract: No abstract text available
    Text: MR0A08B FEATURES • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures


    Original     		PDF MR0A08B 20-years MR0A08B 576-bit EST00183

    Untitled

    Abstract: No abstract text available
    Text: MR20H40 / MR25H40 MR20H40 - 50MHz/20ns tSCK Industrial Temp Range 4Mb SPI Interface MRAM MR25H40 - 40MHz/25ns tSCK (Industrial, Extended and AEC-Q100 Grade 1 Temp Range) 4Mb SPI Interface MRAM For more information on product options, see “Table 16 – Ordering Part Numbers” on page 24.


    Original     		PDF MR20H40 MR25H40 50MHz/20ns MR25H40 40MHz/25ns AEC-Q100 MR20H40. AEC-Q100 EST00459

    Untitled

    Abstract: No abstract text available
    Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A16A AEC-Q100 MR2A16A 304-bit EST00193 Rev10

    MR25H10CDC

    Abstract: mr25h10mdc MR25H10 AEC-Q100 dfn tray 5 mm x 6 mm
    Text: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate


    Original     		PDF MR25H10 AEC-Q100 MR25H10 576-bit MR25H10CDC mr25h10mdc dfn tray 5 mm x 6 mm

    MR25H10C

    Abstract: MR25H10MDF
    Text: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate


    Original     		PDF MR25H10 MR25H10 576-bit 1-877-347-MRAM EST353 MR25H10C MR25H10MDF

    Untitled

    Abstract: No abstract text available
    Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package


    Original     		PDF MR4A16B AEC-Q100 MR4A16B 216-bit EST00352

    footprint jedec Mo-119

    Abstract: MR256A08BCMA35R
    Text: MR256A08B FEATURES 32K x 8 MRAM • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures


    Original     		PDF MR256A08B 20-years MR256A08B 144-bit EST00355 EST355 footprint jedec Mo-119 MR256A08BCMA35R

    Untitled

    Abstract: No abstract text available
    Text: MR0A08B FEATURES • • • • • • • • • 128K x 8 MRAM 3.3 Volt power supply Fast 35 ns read/write cycle SRAM compatible timing Native non-volatility Unlimited read & write endurance Data always non-volatile for >20 years at temperature Commercial and industrial temperatures


    Original     		PDF MR0A08B 48-ball 44-pin 32-pin MR0A08B 576-bit 1-877-347-MRAM EST00183 101113a

    Untitled

    Abstract: No abstract text available
    Text: MR256D08B Dual Supply 32K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature


    Original     		PDF MR256D08B 20-years MR256A08B 144-bit MR256D08B

    MR2A08AMYS35

    Abstract: AECQ-100 MR2A08AYS35 BGA 8 x 8 tray MR2A08A
    Text: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in


    Original     		PDF MR2A08A 20-years AEC-Q100 MR2A08A 304-bit 1-877-347-MRAM EST170 MR2A08AMYS35 AECQ-100 MR2A08AYS35 BGA 8 x 8 tray

    MR0A08BC

    Abstract: No abstract text available
    Text: MR0A08B FEATURES 128K x 8 MRAM • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures


    Original     		PDF MR0A08B 20-years MR0A08B 576-bit EST00183 EST183 MR0A08BC

    Everspin Technologies

    Abstract: MR25H256 22Status
    Text: MR25H256 FEATURES 256Kb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate


    Original     		PDF MR25H256 AEC-Q100 256Kb MR25H256 144-bit EST00418 M25H256 EST418 Everspin Technologies 22Status

    Untitled

    Abstract: No abstract text available
    Text: MR256A08B 32K x 8 MRAM FEATURES • 3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Native non-volatility • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • Commercial and industrial temperatures


    Original     		PDF MR256A08B 20-years MR256A08B 144-bit EST355

    MR0D08BMA45

    Abstract: No abstract text available
    Text: MR0D08B Dual Supply 128K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature


    Original     		PDF MR0D08B 20-years MR0D08B 576-bit 45nshorized MR0D08BMA45

    Untitled

    Abstract: No abstract text available
    Text: MR20H40 / MR25H40 MR20H40 - 50MHz/20ns tSCK Commercial and Industrial Temp Range 4Mb SPI Interface MRAM MR25H40 - 40MHz/25ns tSCK (Industrial and AEC-Q100 Grade 1 Temp Range) 4Mb SPI Interface MRAM For more information on product options, see “Table 16 – Ordering Part Numbers” on page 24.


    Original     		PDF MR20H40 MR25H40 50MHz/20ns MR25H40 40MHz/25ns AEC-Q100 MR20H40. EST00459