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    EUPEC IGBT 3.3KV Search Results

    EUPEC IGBT 3.3KV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    EUPEC IGBT 3.3KV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6.5kV IGBT

    Abstract: eupec igbt 3.3kv igbt 3.3kv IEC1287 eupec igbt 6.5kV IGBT 3kv 2902 eupec igbt 3.3kV 33KV
    Text: Press Release – December 16th 2002 Warstein eupec is introducing new 3.3kV high insulating IGBT modules eupec’s new 3.3kV IGBT modules offer extremely high insulation with test voltage VISOL of 10.2kV for center tapped circuits. The new 3.3kV module family is optimized for center tapped circuits


    Original     		IEC1287. D-59581 6.5kV IGBT eupec igbt 3.3kv igbt 3.3kv IEC1287 eupec igbt 6.5kV IGBT 3kv 2902 eupec igbt 3.3kV 33KV PDF

    eupec igbt 3300v

    Abstract: Eupec Power Semiconductors EUPEC DIODE Eupec igbt eupec 2902 eupec igbt driver eupec module igbt emcon diode 3.3kv diode
    Text: Press Release – May 2003 PCIM 2003 eupec is introducing its new 3300V High Power Emcon-HDR Diode with High Dynamic Robustness eupec’s second generation 3300V High Power Module family is now being offered with a new diode and the new name KF2C, featuring a SOA which is increased by the factor of two.


    Original     		D-59581 eupec igbt 3300v Eupec Power Semiconductors EUPEC DIODE Eupec igbt eupec 2902 eupec igbt driver eupec module igbt emcon diode 3.3kv diode PDF

    FZ1200R33KF2C

    Abstract: igbt eupec eupec igbt 3.3kv 3.3kv diode FZ1200R33KF2 Emcon igbt 3.3kv FZ1200r
    Text: MARKETING NEWS Date:2003-03-07 Page 1 of 2 MN-Number: MN2003-03 Introduction of the new 3.3kV EmCon-HDR Diode Due to new perceptions of eupec and Infineon in simulation and design, the lateral device structure of 3.3kV diodes could be improved. Thus we are able to expand the safe operation area SOA of the 3.3kV


    Original     		MN2003-03 FZ1200R33KF2 FZ1200R33KF2C FZ1200R33KF2C D-59581 igbt eupec eupec igbt 3.3kv 3.3kv diode FZ1200R33KF2 Emcon igbt 3.3kv FZ1200r PDF