GTO hvdc thyristor
Abstract: welding rectifier circuit board thyristor ltt 1590A single phase fully controlled rectifier scr control circuit for welding disc thyristor IGCT high single phase bridge rectifier pin configuration single phase bridge fully controlled rectifier
Text: Product Information Main Features Thyristors & Diodes • ■ ■ ■ BIPOLAR POWER SEMICONDUCTORS from Infineon Technologies are applied in the most varied fields of applications in a power range from a few kilo watts up to several giga watts. Besides the standard phase thyristors and rectifier diodes, our
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SIDC03D120H
Abstract: 4372H
Text: Preliminary SIDC03D120H Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC03D120H 1200V ICn 4A A This chip is used for:
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SIDC03D120H
85mm2
Q67050-A4111A001
4372H,
SIDC03D120H
4372H
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SIDC04D60F6
Abstract: No abstract text available
Text: Preliminary SIDC04D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC04D60F6 600V IF C Applications:
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SIDC04D60F6
Q67050-A4065A001
4334M,
SIDC04D60F6
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DT350
Abstract: DIODE 3A 600V transistor 350A 4314M SIDC02D60F6 EUPEC DD 41
Text: Preliminary SIDC02D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC02D60F6 600V IF C Applications:
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SIDC02D60F6
Q67050-A4157A001
4314M,
DT350
DIODE 3A 600V
transistor 350A
4314M
SIDC02D60F6
EUPEC DD 41
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SIDC04D60F
Abstract: ir 339a
Text: Preliminary SIDC04D60F Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC04D60F 600V ICn 9A A This chip is used for:
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SIDC04D60F
Q67050-A4065A001
4334E,
SIDC04D60F
ir 339a
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SMPS 250A
Abstract: SIDC03D120F
Text: Preliminary SIDC03D120F Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC03D120F 1200V ICn 2A A This chip is used for:
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SIDC03D120F
4375E,
SMPS 250A
SIDC03D120F
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4314M
Abstract: SIDC02D60F6
Text: Preliminary SIDC02D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC02D60F6 600V IF C Applications:
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SIDC02D60F6
Q67050-A4157A001
4314M,
4314M
SIDC02D60F6
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FS20R06XE3
Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors
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D-59581
FS20R06XE3
aeg powerblock tt
bsm25gp120 b2
thyristor aeg
aeg powerblock tt 32 n
STR W 6856 DATA SHEET
HIGH VOLTAGE ISOLATION DZ 2101
FS450R12KE3 S1
MR 4710 IC
aeg powerblock dd
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SIDC04D60F6
Abstract: No abstract text available
Text: Preliminary SIDC04D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC04D60F6 600V IF C Applications:
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SIDC04D60F6
Q67050-A4065A001
4334M,
SIDC04D60F6
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SIDC04D60F6
Abstract: DSA0026392
Text: Preliminary SIDC04D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC04D60F6 600V IF C Applications:
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SIDC04D60F6
Q67050-A4065A001
4334M,
SIDC04D60F6
DSA0026392
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Untitled
Abstract: No abstract text available
Text: Preliminary SIDC04D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC04D60F6 VR 600V IF A This chip is used for:
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SIDC04D60F6
Q67050-A4065sawn
4334M,
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4314M
Abstract: SIDC02D60F6
Text: Preliminary SIDC02D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC02D60F6 600V IF C Applications:
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SIDC02D60F6
Q67050-A4157A001
4314M,
4314M
SIDC02D60F6
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DD 127 D
Abstract: 3403S EUPEC DD 350
Text: EUPEC blE D m 34032^7 DDOIST? 645 « U P E C DD 121 S, DD 122 S Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage tvj — 4 0 ° C . tvj max DD 121 S:
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3403ST?
DD 127 D
3403S
EUPEC DD 350
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EUPEC Thyristor
Abstract: AD180S diode wj MS4800
Text: LIE J> EUPEC m aHDBS1!? DDÜiaS? 421 BiUPEC AD 180 S Elektrische Eigenschaften Electrical properties H ochstzulässige Werte M axim um rated values Periodische VorwärtsS pitzensperrspannung repetitive peak forward off-state voltage Vorwärts-Stoßspitzenspannung
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dd 55 n 14 powerblock
Abstract: dd 151 n 1400 powerblock
Text: EUPEC blE D 34032*17 GGDlSbH BTT • U P E C DD 151 N Elektrische Eigenschaften Electrical properties Durchlaßstrom-Grenzeffektivwert RMS forward current Dauergrenzstrom average forward current Stoßstrom-Grenzwert surge current + 100 V I frm sm 240 A I favm
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tviS25Â
0D012bb
dd 55 n 14 powerblock
dd 151 n 1400 powerblock
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EUPEC powerblock
Abstract: 082c
Text: bl E D EUPEC 34032T7 000127G bTS « U P E C DD 175 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 2800,3000 3200 3400 V V V 100 V I frmsm 350 A I favm 175 223 A A Periodische Spitzensperrspannung repetitive peak reverse
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34032T7
D127G
-40oC.
EUPEC powerblock
082c
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No584
Abstract: 1bw transistor
Text: F 400 R 06 KL EUPEC 52E • 34032^7 D DD DBbD Thermische Eigenschaften Transistor Transistor D Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 600 V 400 A !c flb b ■U PEC Thermal properties Rthjc DC, pro Baustein / per module
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400mA
34D32CI7
No584
1bw transistor
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EUPEC TT 60 f
Abstract: No abstract text available
Text: EUPEC blE D • 34032^7 □DQIB'JS ‘iSS BHIJPEC T T 111 F, T D 111 F, D T111 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 40°C. t vj max Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state
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EUPEC T 36 n
Abstract: TT308 EUPEC T 218 N 12
Text: EUPEC T 236 N S5E D • 34035T7 000073b OSI B U P E C Typenreihe/Type range_ T236N _ 2000_ 2200_ 2400_ 2600* Elektrische Eigenschaften Electrical properties Hochstzulässige Werte U d r m . Vrrm Periodische Vorwärts- und
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34035T7
000073b
T236N
T-91-20
5x315
EUPEC T 36 n
TT308
EUPEC T 218 N 12
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EUPEC tt 161 n 16
Abstract: No abstract text available
Text: EUPEC blE D • 3HD32T7 00□ 117T T4T « U P E C TT 101 F, TD 101 F, DT 101 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte_Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state
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3HD32T7
40teilheit
EUPEC tt 161 n 16
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Untitled
Abstract: No abstract text available
Text: EUPEC SEE J> T 270 N 34035^7 0000737 T^fl • U P E C ■7^25vV 9 lypenreihe/lÿpe range T270N 2000 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VdHM. Vrrm Periodische Vorwärts- und RQckwärts-Spitzensperrspannung Effektiver DurchlaBstrom
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T270N
T-91-20
5x315
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Untitled
Abstract: No abstract text available
Text: EUPEC blE ]> • BMGaS'ì? ODOllbS 354 « U P E C TT 71 F, TD 71 F, DT 71 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state
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Untitled
Abstract: No abstract text available
Text: EUPEC S2E » • BMGBET? 00G07QL, 314 « U P E C T160N 7 ^ 5 ' / ? Typenrelhe/Type range T 160 N Elektrische Eigenschaften Electrical properties Vdrm. Vrrm Periodische Vorwärts- und Rückwärts-S pitzensperrspannung Effektiver Ourchlaßstrom Itrmsm Dauergrenzstrom
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00G07QL,
T160N
T-91-20
5x315
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EUPEC tt 170 n 14
Abstract: EUPEC tt 170 n 12 eupec dd 76 n 12 l EUPEC DD 171 N EUPEC tt 250 n eupec TT EUPEC tt 170 N 16 EUPEC tt 25 N 12
Text: blE EUPEC D O G IH ^ 3 H 0 3 E €i 7 D =153 IUPEC T T 111 F, T D 111 F, DT 111 F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 400 600 800 V V V V rsm = V RRm + 100 V It r m s m 200 111 128 30 0 0 2600 45000
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34D32'
EUPEC tt 170 n 14
EUPEC tt 170 n 12
eupec dd 76 n 12 l
EUPEC DD 171 N
EUPEC tt 250 n
eupec TT
EUPEC tt 170 N 16
EUPEC tt 25 N 12
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