BSM 50 GX 120 DN2
Abstract: bsm 50 Gx 120 IGBT BSM20GD60DN2E3224 35GD120DN2E3224 25GD120DN2 25GD120DN2E3224 75GD120DN2 15gd120dn2e322 100GD120DN2 three phase bridge inverter 120 degree
Text: „Econo“my improvement in inverter-converter-moduldesign Gottfried Ferber, eupec GmbH, Warstein-Belecke Ralf Jörke, eupec GmbH, Warstein-Belecke Christian Lammers, Ruhr-Universität Bochum Dr. Andreas Lenniger, eupec GmbH, Warstein-Belecke Abstract: To realise an economy inverter construction, it is a good solution to use high reliable
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50GD120DN2G
75GD120DN2
100GD120DN2
100GT120DN2
150GT120DN2
200GT120DN2
DDB6U84N*
0A/1200V
DDB6U100N*
BSM 50 GX 120 DN2
bsm 50 Gx 120 IGBT
BSM20GD60DN2E3224
35GD120DN2E3224
25GD120DN2
25GD120DN2E3224
75GD120DN2
15gd120dn2e322
100GD120DN2
three phase bridge inverter 120 degree
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IGBT cross reference semikron eupec
Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130
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DS5468
DS5468-2
FZ1200R33KF2
140x190
DIM1200ESM33
FZ1600R12KF4
140x130
DIM1600FSM12
FF400R12KF4
IGBT cross reference semikron eupec
IGBT cross reference semikron
2MBI 200NB-120 IGBT
Eupec
150Ne120
MG200J2YS50 mitsubishi
MG100Q2YS51
MG400Q1US41 igbt mitsubishi
FZ800R16KF4
MG200Q2YS40
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IGBT cross reference semikron eupec
Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130
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DS5468
DS5468-2
FZ1200R33KF2
140x190
DIM1200ESM33
FZ1600R12KF4
140x130
DIM1600FSM12
FF400R12KF4
IGBT cross reference semikron eupec
150Ne120
FZ800R16KF4
MG200J2YS50 mitsubishi
IGBT cross reference semikron
Eupec Power Semiconductors
IGBT mitsubishi mg300j2ys50
MBM200GS12
FZ1600R12KF4
MG200Q2YS40
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FS450R12KE3 S1
Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.
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E-103,
FS450R12KE3 S1
infineon pmb 6850 e
bsm25gp120 b2
HIGH VOLTAGE ISOLATION DZ 2101
infineon pmb 6850
Thyristor eupec POWERBLOCK
2SD 1460
pmb 6850
V61-14
BSM35GP120
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Eupec Power Semiconductors 600v bsm
Abstract: BSM300GB60DN2 eupec igbt BSM 100 gb Eupec BSM siemens igbt 200 A WELDING INVERTER DESIGN BY IGBT
Text: A New Generation of 600V IGBT-Modules Dipl.-Ing. Jürgen Göttert, eupec GmbH & Co KG, Warstein Dipl.-Ing. Andreas Karl, eupec GmbH & Co KG, Warstein Dipl.-Ing. Thomas Laska, SIEMENS, München Dr. Ing. Anton Mauder, SIEMENS, München Dipl.-Ing. Wolfgang Scholz, SIEMENS, München
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FS20R06XE3
Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors
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D-59581
FS20R06XE3
aeg powerblock tt
bsm25gp120 b2
thyristor aeg
aeg powerblock tt 32 n
STR W 6856 DATA SHEET
HIGH VOLTAGE ISOLATION DZ 2101
FS450R12KE3 S1
MR 4710 IC
aeg powerblock dd
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module bsm 20 gp 60
Abstract: module bsm 25 gp 120 siemens igbt BSM 300 Eupec bsm 25 gb 120 siemens igbt BSM 50 gp 120 siemens igbt BSM 100 gb siemens igbt BSM 75 gb 100 eupec igbt BSM 100 gb Eupec bsm 75 gb 120 IGBT full bridge
Text: Power electronics Permanent innovation in IGBT modules Since the mid-80s, the technical specifications of IGBTs have improved substantially, opening up applications long reserved for bipolar components such as thyristors or GTOs. ver since the Siemens Semiconductor Group and eupec GmbH, a power
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mid-80s,
products/36/3622
module bsm 20 gp 60
module bsm 25 gp 120
siemens igbt BSM 300
Eupec bsm 25 gb 120
siemens igbt BSM 50 gp 120
siemens igbt BSM 100 gb
siemens igbt BSM 75 gb 100
eupec igbt BSM 100 gb
Eupec bsm 75 gb 120
IGBT full bridge
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IGD515EI
Abstract: IGBT Power Module siemens ag FS450R17KE3 FF400R17KE3 igbt 1200v 150a trench field stop ECONOPACK FF800R17KE3 FF300R17KE3 FZ3600R17KE3 FZ400R17KE3
Text: 1700V Trench IGBT Modules * R. Mallwitz, R. Tschirbs , M. Pfaffenlehner, A. Mauder (*) (*) (*) (*) , C. Schaeffer (*) eupec GmbH, Max-Planck Straße 5, D-59581 Warstein-Belecke Infineon Technologies AG, Balanstraße 73, D-81541 Munich Infineon Technologies AG, Siemensstraße 2, A-9500 Villach
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D-59581
D-81541
IGD515EI
IGBT Power Module siemens ag
FS450R17KE3
FF400R17KE3
igbt 1200v 150a trench field stop
ECONOPACK
FF800R17KE3
FF300R17KE3
FZ3600R17KE3
FZ400R17KE3
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the calculation of the power dissipation for the igbt and the inverse diode in circuits
Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" 5kw inverter circuit diagram pure sinus inverter circuit diagram the calculation of the power dissipation for the IGBT BSM25GP120 3 phase inverter 150 degree conduction mode wave IGBT inverter calculation IGBT JUNCTION TEMPERATURE CALCULATION D. Sraiber, W. Lukasch
Text: Power Integration with new Econo-PIM IGBT Modules Calculation of junction-temperatures for rectifier-diodes, IGBT’s and freewheeling-diodes in the PIM A. Schulz, N. Dittmann, M. Loddenkötter, Th. Schütze eupec, Max-Planck-Straße 5, 59581 Warstein M. Feldvoß
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BSM25GP120
the calculation of the power dissipation for the igbt and the inverse diode in circuits
"the calculation of the power dissipation for the igbt and the inverse diode in circuits"
5kw inverter circuit diagram
pure sinus inverter circuit diagram
the calculation of the power dissipation for the IGBT
3 phase inverter 150 degree conduction mode wave
IGBT inverter calculation
IGBT JUNCTION TEMPERATURE CALCULATION
D. Sraiber, W. Lukasch
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Assmann Electronics v6515
Abstract: Thermagon kluber grease t-pli 210 v6515 kluber T-PLI 200 thermagon FSF52 Thermagon thermal grease T-PLI 210 thermagon
Text: Application Note from Europe for the World European PowerSemiconductor and Electronics Company Comparison of thermal compounds and heat conducting foils The following information is the result of a comparative investigation of different heat conductive materials in the eupec laboratory. The examined types only represent a small
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705PSA
FSF-52/98
V6515
Assmann Electronics v6515
Thermagon
kluber grease
t-pli 210
v6515
kluber
T-PLI 200 thermagon
FSF52
Thermagon thermal grease
T-PLI 210 thermagon
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d 2095 transistor
Abstract: No abstract text available
Text: eupec Technische Inform ation / Technical Inform ation ! g BSM20GP60 : s vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties Höchstzulässige W erte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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BSM20GP60
d 2095 transistor
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Eupec BSM
Abstract: Eupec BSM 15 gd 60 dlc QE RB 29
Text: eupec Technische Information / Technical Information BSM 100 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte Elektrische Eigenschaften / Maxim urn rated values / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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Untitled
Abstract: No abstract text available
Text: eupec Technische Information / Technical Information BSM200GB120DLC ££££. vorläufige Daten preliminary data H öchstzulässige W erte Elektrische Eigenschaften / M axim um rated values / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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BSM200GB120DLC
BSM200GB120DLC
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Eupec BSM
Abstract: BSM50GP60 eupec
Text: eupec Technische Information / Technical Information BSM50GP60 vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö ch stzu lässig e Werte / Maximum rated valu es Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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BSM50GP60
50GP60
Eupec BSM
BSM50GP60
eupec
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Eupec BSM
Abstract: BSM50GD120DN2E3226 E3226 GD120DN2E3226 C67070-A2514-A67
Text: eupec BSM 50 GD120DN2E3226 IGBT Power Module • Power module • 3-phase fuN-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal Type BSM 50 GD120DN2E3226 ^CE h 1200V 50A
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GD120DN2E3226
E3226:
C67070-A2514-A67
GD120PN2E3226
Eupec BSM
BSM50GD120DN2E3226
E3226
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BSM30GP60 INVERTER CIRCUIT
Abstract: BSM30GP60
Text: eupec Technische Inform ation / Technical Inform ation ! g BSM30GP60 : s vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö c h s tzu lä s s ig e W e rte / M axim u m rated valu e s Diode Gleichrichter/ Diode Rectifier
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BSM30GP60
BSM30GP60 INVERTER CIRCUIT
BSM30GP60
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BSM75GD120DLC
Abstract: No abstract text available
Text: eupec Technische Information / Technical Information BSM75GD120DLC ££££. vorläufige Daten preliminary data H öchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties K o lle kto r-E m itte r-S p e rrs p a n n u n g
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BSM75GD120DLC
75GD120DLC
BSM75GD120DLC
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Untitled
Abstract: No abstract text available
Text: eupec BYM 300 A 170 DN2 Diode Power Module • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 Type VR25 BYM 300 A 170 DN2 1700V 380A ^FDC Package Ordering Code
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C67070-A2901-A67
Oct-27-1997
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Transistor GE 67
Abstract: No abstract text available
Text: eupec Technische Inform ation / Technical Inform ation H i— B S M 15G P 60 vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties Höchstzulässige W erte / Maximum rated values Diode Gleichrichter/ Diode Rectifier P eriodische Rückw. S pitzensperrspannung
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BSM15GP60
Transistor GE 67
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JS7J
Abstract: No abstract text available
Text: eupec BYM 600 A 170 DN2 Diode Power Module • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 E 3166 Type VR25 BYM 600 A 170 DN2 1700V 600A ^FDC Package
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C67070-A2902-A67
Oct-27-1997
JS7J
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Untitled
Abstract: No abstract text available
Text: Technische Information / eupec Technical Information BSM25GD120DLCE3224 lü B T - M o d u le s vorläufige Daten preliminary data H öchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties K o lle kto r-E m itte r-S p e rrs p a n n u n g
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BSM25GD120DLCE3224
BSM25GD120DLC-E3224
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Untitled
Abstract: No abstract text available
Text: eupec Technische Information / Technical Information ££££. BSM 100G B120D LC vorläufige Daten preliminary data H öchstzulässige W erte Elektrische Eigenschaften / M axim um rated values / Electrical properties K o lle kto r-E m itte r-S p e rrs p a n n u n g
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B120D
BSM100GB120DLC
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B120D
Abstract: No abstract text available
Text: eupec Technische Information / Technical Information ££££. BSM 150G B120D LC vorläufige Daten preliminary data H öchstzulässige W erte Elektrische Eigenschaften / M axim um rated values / Electrical properties K o lle kto r-E m itte r-S p e rrs p a n n u n g
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B120D
BSM150GB120DLC
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information e u p e c BSM300GB120DLC ££££. vorläufige Daten preliminary data H öchstzulässige W erte Elektrische Eigenschaften / M axim um rated values / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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BSM300GB120DLC
BSM300GB120DLC
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