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    Amphenol Corporation GTFP08431BEU

    Memory Card Connectors Micro SD, P-P Type
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    TTI GTFP08431BEU Reel 8,000 1,000
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    Sunny Electronics Corp SYS1561-1105-EU-MICRO-USB

    Power supply: switching; 5VDC; 2.1A; 11W; Plug: EU; Out: USB micro
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    TME SYS1561-1105-EU-MICRO-USB 23 1
    • 1 $12.13
    • 10 $11.52
    • 100 $10.83
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    Abstract: No abstract text available
    Text: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has


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    Temperature Dependent Linear HEMT Model Extracted with Multi-Temperature Optimization

    Abstract: No abstract text available
    Text: Temperature Dependent Linear HEMT Model Extracted with MultiTemperature Optimization Yu Zhu#, Sagar Karalkar*, Kanti Prasad*, Cejun Wei#, Jerod Mason#, and Dylan Bartle# # * Skyworks Solutions Inc., Woburn, MA 01801 USA ECE Dept., University of Massachusetts Lowell, Lowell, MA 01854 USA


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    BLF578

    Abstract: AN10858 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier
    Text: AN10858 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 Rev. 02 — 26 March 2010 Application note Document information Info Content Keywords BLF578, LDMOS, DVB, planar balun Abstract This application note describes the design and performance of a 200 W


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    PDF AN10858 BLF578 BLF578, AN10858 BLF578 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier