EMC21L1004GN
Abstract: EUDYNA 26841 2110 - 2170mhz power module
Text: Eudyna GaN-HEMT 10W Preliminary EMC21L1004GN High Voltage - High Power GaN-HEMT Power Amplifier Module FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 28.5dB typ. at Pout=22dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・Proven Reliability
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EMC21L1004GN
22dBm
2170MHz
EMC21L1004GN
EUDYNA
26841
2110 - 2170mhz power module
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EGN26A180IV
Abstract: Eudyna Devices EGN26A180
Text: Eudyna GaN-HEMT 180W Preliminary ES/EGN26A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability
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ES/EGN26A180IV
EGN26A180IV
Eudyna Devices
EGN26A180
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GaN amplifier
Abstract: EGN35A180IV
Text: Eudyna GaN-HEMT 180W Preliminary ES/EGN35A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability
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ES/EGN35A180IV
GaN amplifier
EGN35A180IV
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EGN045MK
Abstract: No abstract text available
Text: Eudyna GaN-HEMT 45W Preliminary EGN045MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 47.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 12dB(typ.) @ f=2200MHz ・Broad Frequency Range : 800 to 2200MHz
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EGN045MK
2200MHz
EGN045MK
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EGN010MK
Abstract: 6 ghz amplifier 10w
Text: Eudyna GaN-HEMT 10W Preliminary EGN010MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 41.0dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15dB(typ.) @ f=3500MHz ・Broad Frequency Range : 800 to 3700MHz
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EGN010MK
3500MHz
3700MHz
EGN010MK
6 ghz amplifier 10w
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27 31 GHz HPA
Abstract: EGN21A090IV hpa L-band Paladin-15 digital predistortion dpd 2carrier WCDMA egn21a090
Text: Eudyna GaN-HEMT 90W Preliminary EGN21A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=42dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz
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EGN21A090IV
42dBm
2200MHz
EGN21A090IV
27 31 GHz HPA
hpa L-band
Paladin-15
digital predistortion dpd 2carrier WCDMA
egn21a090
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EGN090MK
Abstract: 679-10 dsa0044095
Text: Eudyna GaN-HEMT 90W Preliminary HS/EGN090MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51.0dBm typ. @ P3dB ・High Efficiency: 65%(typ.) @ P3dB ・Linear Gain : 18dB(typ.) @ f=900MHz ・Proven Reliability
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HS/EGN090MK
900MHz
EGN090MK
679-10
dsa0044095
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EGN26A090IV
Abstract: EUDYNA EGN26A090
Text: Eudyna GaN-HEMT 90W Preliminary ES/EGN26A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability
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ES/EGN26A090IV
EGN26A090IV
EUDYNA
EGN26A090
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GaN amplifier
Abstract: EUDYNA
Text: Eudyna GaN-HEMT 30W Preliminary ES/EGN26A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15.0dB(typ.) @ f=2.6GHz ・Proven Reliability
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ES/EGN26A030MK
GaN amplifier
EUDYNA
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hpa L-band
Abstract: EGN21A180IV
Text: Eudyna GaN-HEMT 180W Preliminary EGN21A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=45dBm(Avg.) ・High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz
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EGN21A180IV
45dBm
2200MHz
EGN21A180IV
Symb004
hpa L-band
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Untitled
Abstract: No abstract text available
Text: Eudyna GaN-HEMT 30W Preliminary ES/EGN35A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 13.0dB(typ.) @ f=3.5GHz ・Proven Reliability
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ES/EGN35A030MK
VDS-16
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Untitled
Abstract: No abstract text available
Text: Eudyna GaN-HEMT 90W Preliminary ES/EGN35A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability
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ES/EGN35A090IV
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EGN030MK
Abstract: Eudyna EGN030MK High Power GaN-HEMT EUDYNA
Text: Eudyna GaN-HEMT 30W Preliminary ES/EGN030MK High Voltage - High Power GaN-HEMT FEATURES •High Voltage Operation : VDS=50V •High Power : 46.5dBm typ. @ P3dB •High Efficiency: 60%(typ.) @ P3dB •Linear Gain : 12dB(typ.) @ f=2700MHz •Broad Frequency Range : 800 to 2800MHz
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ES/EGN030MK
2700MHz
2800MHz
EGN030MK
Eudyna EGN030MK High Power GaN-HEMT
EUDYNA
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EGN030MK
Abstract: Eudyna EGN030MK High Power GaN-HEMT
Text: Eudyna GaN-HEMT 30W Preliminary EGN030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 12dB(typ.) @ f=2700MHz ・Broad Frequency Range : 800 to 2800MHz
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EGN030MK
2700MHz
2800MHz
EGN030MK
Eudyna EGN030MK High Power GaN-HEMT
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EGN010MK
Abstract: No abstract text available
Text: Eudyna GaN-HEMT 10W Preliminary ES/EGN010MK High Voltage - High Power GaN-HEMT FEATURES •High Voltage Operation : VDS=50V •High Power : 41.0dBm typ. @ P3dB •High Efficiency: 60%(typ.) @ P3dB •Linear Gain : 13dB(typ.) @ f=3500MHz •Broad Frequency Range : 800 to 3700MHz
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ES/EGN010MK
3500MHz
3700MHz
EGN010MK
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emy14
Abstract: No abstract text available
Text: EMY1441HI Datasheet Rev1.1 J anuary,2006 EMY1441HI 11.3 Gb/s Direct Modulation Driver IC for +3.3V Supplied Voltage 1. Abstr act 1 2) 3) 4) 5) 6) 7) 8) Operation speed over 11.3Gb/s Output Modulation Current:60mA typ.,25ohm Load) Power Supply Voltage : +3.3V
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EMY1441HI
EMY1441HI
25ohm
24-pin
1906B,
ECM-A00-218
emy14
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Eudyna Devices
Abstract: fmm106
Text: FMM1061VJ GaAs MMIC FEATURES • Operation to 6.0 GHz • Input Frequency divide by 4, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available
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FMM1061VJ
SMT-10
FMM1061VJ
Eudyna Devices
fmm106
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EUDYNA
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
EUDYNA
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FLU35XM
Abstract: Eudyna Devices
Text: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the
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FLU35XM
FLU35XM
V4888
Eudyna Devices
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Eudyna Devices
Abstract: ml marking FMM1062ML eudyna an
Text: FMM1062ML GaAs MMIC FEATURES • Low Power Consumption: 60mW Typ. • Operation to 6.0 GHz • Input Frequency divide by 4, OUT and OUT • -3V (or+3V) DC Single Power Supply • External 50 ohm Load Driving Capability • Small 6-pin Plastic Package for SMT applications (ML)
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FMM1062ML
FMM1062ML
Paramete4888
Eudyna Devices
ml marking
eudyna an
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"Frequency Divider"
Abstract: FMM1103VJ Eudyna Devices
Text: FMM1103VJ GaAs Microwave Frequency Divider FEATURES • Operation to 12.0 GHz • Input Frequency divide by 8, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available
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FMM1103VJ
SMT-10
FMM1103VJ
Voltag4888
"Frequency Divider"
Eudyna Devices
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L-Band
Abstract: No abstract text available
Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design
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FLL810IQ-4C
FLL810IQ-4C
L-Band
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Eudyna Devices
Abstract: eudyna fet FLL810IQ-3C
Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.
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FLL810IQ-3C
FLL810IQ-3C
Symbo4888
Eudyna Devices
eudyna fet
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Untitled
Abstract: No abstract text available
Text: FMM5118X 20-32GHz Doubler MMIC FEATURES • Integrated Monolithic Doubler • High Harmonic Rejection • Single Supply Voltage • High Reliability DESCRIPTION The FMM5118X is a doubler, consisting of an X2 multiplier followed by a buffer amplifier for applications with an output
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FMM5118X
20-32GHz
FMM5118X
Uni88
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