1J6G
Abstract: Scans-0017343
Text: AMPLIFICATEUR CLASSE B ITT CARACTERISTIQUES 2,0 volts T ension filam ent C C . 0,24 am père C ou ran t filam ent . ST 12 A m poule . 7-AB Culot — P etit octal 8 broches V erticale
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35stiques
1J6G
Scans-0017343
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TSA3101G TOSHIBA AC SWITCH T S OPTICALLY ISOLATED AC SWITCH A 3 1 1 G R .M .S . On-State C urrent : I rr R M S = 0.2—3A R ep etitive Peak Off-State Voltage : Vd rm U n it in mm -400, 600V Isolation Voltage between In p u t to O u tp u t: 3000VAC (t= lm in .)
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TSA3101G
3000VAC
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l2c48
Abstract: No abstract text available
Text: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage
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5DL2C48A,
5FL2C48A,
U5DL2C48A,
U5FL2C48A
L2C48A,
5FL2C48A
5FL2C48A
l2c48
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fd 715
Abstract: BAL99
Text: IÌAL99 M it s i n i u in K a t i n g s { Ta=25“c Unie js Qt herwi&e Note r h j r lt U r is lk Sym bol N on-R ep etitive f^ ak R e v e rie Voltage vrm Peak R ep etitive Reverse V oltag e W o rkin g Peak R everse V oltag e DC B lo ckin g Voltage vrw m V a lu e
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10mft
15QimA
l00fl
BAL99
fd 715
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7 H STROBO FLASHER APPLICATIONS FAST RECOVERY U n it in mm • Average Forw ard C urrent : Txr* (A V ) —0=2A • Reverse Voltage (D C ) • R ep etitive Peak Reverse Surge Voltage :V r r s m = 1500V
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2N2483
Abstract: 2N2484 2n 2483
Text: 2 N 2483 * 2 N 2484 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLAN A R E P IT A X IA U X Preferred device D isp o sitif recommandé - LF small signal amplification low noise A m plification B F p etits signaux (faible b ru it)
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O-18-See
10/iA
10juA
2N2483
2N2484
2n 2483
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2n706
Abstract: SCHEMA 2n 706
Text: 2N 706 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILIC IU M , PLANAR - Small signal amplification A m plifica tio n p etits signaux - Low current fast switching 25 V VCBO Commutation rapide faible courant ^21E mA h Maximum power dissipation Case TO-18
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SF10D14
Abstract: SF10G14 SF10B14 TOSHIBA THYRISTOR 13-14A1A thyristor H 40 TB 16A
Text: 3T TOSHIBA -CDISCRETE/OPTOJ dF I ^ G T T B S D DDDSS71 S T t - PHASE CONTROL THYRISTOR Unit in mm 400V SF10G14 10A MAXIMUM RATINGS ¿14.2MAX SYM BOL C H A R A C T E R IS T IC R etitive P eak O ff-S tate V oltage and R ep etitive P eak R e v e r s e V oltage
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DDDSS71
SF10G14
SF10B14
SF10D14
SF10D14
SF10G14
TOSHIBA THYRISTOR
13-14A1A
thyristor H 40 TB 16A
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T440
Abstract: t616
Text: TO-218 ISOLATED AND NONISOLATED TRIAC U 4 IB H U H U T lA U k i. W M M L R e p etitive Peak O ff-S ta te V o lta g e 1 G a te O p e n , and T j = 1 1 0 ° C nCW M VD M U N IT S VO LT VDRM 200 400 600 H IT 2 1 6 H IT 4 1 6 H IT 6 1 6 H IT 2 2 5 H IT 4 2 5
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MK1007P
Abstract: DTL or TTL integrated logic circuits MK1007 TMS3409 LTRT ic PIN-FOR-PIN REPLACEMENT 2S32B
Text: s ig n o tic s QUAD 80 BIT S T A T IC SH IFT H w i r i a 2532 SILICON GATE MOS 2500 SERIES d e s c r ip t io n Th eSig n etits 2 532 Sta tic » ¡ f t Register consists of enhance ment mode P-Channel silicon gate MOS devices integrated on a single m onolithic chip. Each o f the fo ur 8 0 -b it reqisters
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80-BIT
MK1007P
DTL or TTL integrated logic circuits
MK1007
TMS3409
LTRT ic
PIN-FOR-PIN REPLACEMENT
2S32B
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diode t 5d
Abstract: tim 5f diode 5d MARKING 5D DIODE 5dl2c
Text: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage
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5DL2C48A,
5FL2C48A,
U5DL2C48A,
U5FL2C48A
L2C48A,
5FL2C48A
L2C48A
5FL2C48A
diode t 5d
tim 5f
diode 5d
MARKING 5D DIODE
5dl2c
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4805G
Abstract: 05B4B
Text: SILICON DIFFUSED TYPE RECTIFIER STACK 05 B, G,1 4648 U n i t in m m SINGLE PHASE BRIDGE RECTIFIER A PPLICA TIO N S. • R ep etitiv e P e a k R everse V oltage : V r r m = 1 0 0 —600V • A verage O u tp u t R ectified C u rre n t : I o = 0 .5 A (T a = 30°C )
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--600V
4805G
05B4B
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BAS16
Abstract: No abstract text available
Text: BAS16 R etitive peak forw ard current If r m m ax. 500 m A 4 A N on -rep etitiv e peak forw ard current per crystal t = 1 us >FSM m ax. t = 1 ms If s m m ax. 1 A t = 1 s If s m max. 0,5 A Storage tem perature range Tstg -5 5 to + 1 5 0 °C Junction tem perature
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BAS16
150mA
BAS16
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7432N
Abstract: 2N744 IC 744 2N743 L 744 ns 743 ic 181 .743 181 .743 d 2n 744 NS2N
Text: NPN SILICON TRANSISTORS, EPITAXIAL 2 N 7 4 3 TRANSISTORS NPN SILIC IU M , E P IT A X IA U X 2 IM 7 4 4 - HF small signai amplification A m plification H F p etits signaux - Low current high speed switching Commutation très rapide faible courant 12 V v CEO
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2N743
2N744
7432N
2N744
IC 744
L 744 ns
743 ic
181 .743
181 .743 d
2n 744
NS2N
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Untitled
Abstract: No abstract text available
Text: f i f i N h on Inter Electronics Corporation 3A Avg. FRD 200 Volts NSF03A20 MAXIMUM RATINGS t l n u: V R ep etitiv e P e a k R e v e rs e V o ltag e f tijS S K S S . A v e ra g e R ectified O u tp u t C u rre n t Alumina Substrate mounted * rfi * Hi -s
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NSF03A20
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Untitled
Abstract: No abstract text available
Text: 1 Am D Schottky Rectifier 1N5817GJ N5818G.1N5819G Dim. Inches Minimum A B C D M illim eter Maximum Minimum .081 1.10 .160 .028 .107 - .205 .034 Maximum Notes 2.057 27.94 4.064 .711 2.718 Dia. 5.207 .864 Dia. - GLASS HERMETIC D041G Working R ep etitive
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1N5817GJ
N5818G
1N5819G
D041G
1N5817G
1N5818G
5817G
105pF
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germanium diode
Abstract: diode germanium "Germanium Diode" germanium diode junction capacitance OA92 Scans-0015452 germanium
Text: OA92 G E R M A N IU M DIODE G erm anium diode in subm iniature all g lass DO 7 envelope, intended for switching applications. RATINGS Lim iting values Continuous re v e rse voltage R etitive peak re v e rs e voltage Non rep etitiv e peak re v e rs e voltage ( t< 1 s)
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NSG2554
Abstract: MOSFET Parameters
Text: NSG 2554 / V ^ IP E F NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL POWER MOSFET S w itch in g P ow er Supplies R ep etitive A valan ch e R atin g Isolated H erm etic P ackage C eram ic E yelets H igh R eliab ility ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted
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NSG2554
XM46-1158
MOSFET Parameters
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TSA2100G ,TSA 2100J TOSHIBA AC SWITCH OPTICALLY ISOLATED AC SWITCH TSA21QQG, TSA21QQJ R .M .S. On-State C urrent : I t R M S = 0.1~2A R ep etitive Peak Off-State Voltage : V d r m = 400, 600V U n it in mm Isolation Voltage between In p u t to O u tp u t: 3 0 0 0 V A C (t = lm in .)
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TSA2100G
2100J
TSA21QQG,
TSA21QQJ
100/iS
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Untitled
Abstract: No abstract text available
Text: 9097250 TOSHIBA DISCRETE/OPTO 39C 0 2 3 1 3 0 ~ T 'd ^ / 3 BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) TOSHIBA -CDISCRETE/OPTOJ 3T 0D02313 t |~ (Jnit i 600V 3A SM3J41 MAXIMUM RATINGS SY M B O L C H A R A C T E R IS T IC R ep etitiv e P e a k O ff- S ta te V oltage
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0D02313
SM3J41
SM3D41
SM3G41
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier Provisional Data Sheet No. PD-9.1445 IRHN9230 R EP ETITIVE AVA LA NC H E A N D dv/dt RATED HEXFET TRANSISTOR P -C H A N N E L RAD HARD -200 Volt, 0.8Q, RAD HARD HEXFET International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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IRHN9230
105Rads
0D2401S
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C86083E
Abstract: DHHS
Text: E G & G/CANADA/OPTOELÊK ETE D 3030blD 000025b □ ICANA 850 nm Quantum Weil7^ ^ : Pulsed Laser Series DATA SHEET C86083E - High power pulsed laser in a coaxial package • T ■ O p eration at 50n s p ulse d u ration and 3 k H z rep etition rate ■ H igh P ea k O u tp u t P ow er:
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3030blD
0000E5b
C86083E
ED-0041/10/89
DHHS
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MRB6A24
Abstract: MRB3A1512 mrb2N12 MRB6A12 MRB1B05 MRB2A12 MRB1N12 MRB3A24 MRB2A24 mrb2l02
Text: 1" x 0.1" GRID RELAYS MRB • 922A T e c h n o l o g y DESCRIPTION T he 1" x 0.1" grid relay series is a general purpose series th a t is pin-for-pin com p atib le w ith m ost com p etitor relays. S om e co n fig u ra tio n s of this relay series are cap ab le of sw itch ing up to 1000 V and up to a
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5dl2c
Abstract: No abstract text available
Text: TOSHIBA 5DL2C48A,5FL2C48A,U5DL2C48A,U5FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive Peak Reverse Voltage
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5DL2C48A
5FL2C48A
U5DL2C48A
U5FL2C48A
5DL2C48A,
5FL2C48A,
U5DL2C48A,
5FL2C48A
5dl2c
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