1 AGMF
Abstract: 8-pins connector AZ6451 AZ6450 plaa DSARS0039997.txt
Text: Sprachmodul / Voice module / Module vocal / Spraakmodule / Sprogmodul Fig. 1: a Mode J5) 1 2 3 4 GSM b) Industrial Module c) 2 Microphone LD 1 J1 PL AY RE C PL AY RE C 8 Pins Slot d) AGMf) Main Board 9 Pins e) Slot Fig 2: e) Microphone f) Speaker Connection
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AZ6451
AZ6450
J12-stikpladsen
1 AGMF
8-pins connector
AZ6451
plaa
DSARS0039997.txt
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ericsson bts Technical specification
Abstract: ERICSSON RNC Ericsson Base transceiver Station ericsson msc rnc bsc ericsson msc et bsc ERICSSON BTS product ericsson bts BTS ericsson ericsson trx receiver sensitivity indoor BTS of ericsson
Text: WCDMA evaluation system—Evaluating the radio access technology of third-generation systems Jan Eldståhl and Anders Näsman The aim of UMTS/IMT-2000 standardization is to produce a truly global standard for third-generation mobile systems. Ericsson’s WCDMA evaluation system facilitates UMTS/IMT-2000 standardization, by allowing operators and engineers to demonstrate and test third-generation services
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UMTS/IMT-2000
ericsson bts Technical specification
ERICSSON RNC
Ericsson Base transceiver Station
ericsson msc rnc bsc
ericsson msc et bsc
ERICSSON BTS product
ericsson bts
BTS ericsson
ericsson trx receiver sensitivity
indoor BTS of ericsson
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Multi-gate pHEMT Modeling for Switch Applications
Abstract: No abstract text available
Text: Multi-gate pHEMT Modeling for Switch Applications Ce-Jun. Wei, Hong Yin, Olesky Klimashov, Yu Zhu, and Dylan Bartle Skyworks Solutions, Inc., 20 Sylvan Road, Woburn, USA Abstract - Multi-gate pHEMTs are extensively used in pHEMT switch circuits for wireless communication
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Challenges and Requirements of Multimode Multiband Power Amplifiers for Mobile Applications
Abstract: No abstract text available
Text: Challenges and Requirements of Multimode Multiband Power Amplifiers for Mobile Applications Nick Cheng, Senior Member, IEEE, and James P. Young, Senior Member, IEEE Skyworks Solutions, Inc., Newbury Park, CA 91320, USA Abstract — Multimode multiband MMMB power amplifiers
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AMP-90
Abstract: amplificateur audio convertisseur dc dc 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5 AF SOT23-6 alimentation stable 5v application note convertisseur de 12v -220v convertisseur de tension 12v 220 diode puissance 30 amp 86 sot23-8
Text: OP AMPS/COMPARATORS Fiches techniques 3 ANALOG DESIGN GUIDE • Notes d’applications • Echantillons gratuits 14 uit Prodtur u F Le seul ampli op avec E/S de rail à rail et vitesse de montée élevée dans un minuscule boîtier SC70 Il offre un produit gain/bande de 8MHz et une vitesse de montée de 14V/µs !
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SC70-5
750mV/div
5-SOT23
6-SOT23,
AMP-90
amplificateur audio
convertisseur dc dc
1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5
AF SOT23-6
alimentation stable 5v application note
convertisseur de 12v -220v
convertisseur de tension 12v 220
diode puissance 30 amp
86 sot23-8
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bsim3 model
Abstract: 1000 watt power supply scheme class E power amplifier Class E amplifier capacitor huang bsim3 ADS GSM Transceiver chip single transistor amplifier circuits bsim3 27 Mhz power amplifier
Text: Chapter 6 CMOS Class-E Power Amplifier 6.0 Introduction Last few years have seen an increase in the popularity of the wireless communication systems. As a result, the demand for compact, low-cost, and low power portable transceivers has increased dramatically [Gray and Meyer, 1995]. A proposed
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tekelec 630
Abstract: AT27273 00-CHA-101 501 CHB SPECIFICATIONS tekelec VJ1206Y104KXAT 501-CHB-8R2 Tekelec TA 501 CHB diod cms
Text: DB-960-60W 60W / 26V / 925-960 MHz PA using 1x PD57070S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W min. with 13 dB gain over 925 - 960 MHz • 10:1 LOAD VSWR CAPABILITY
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DB-960-60W
PD57070S
DB-960-60W
tekelec 630
AT27273
00-CHA-101
501 CHB SPECIFICATIONS
tekelec
VJ1206Y104KXAT
501-CHB-8R2
Tekelec TA
501 CHB
diod cms
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hirschmann
Abstract: a die het nu HIRSCHMANN KABEL AT*T coupler conductor 737001
Text: Montageanleitung On-Glass-Antenne MCA 9 00 OG Bestell-Nr. / Bestel-nr. / Ord. code / N° de cde. 921 737-001 Montagehandleiding On-Glass antenne MCA 9 01 OG Installation instructions On-glass-antenna Bestell-Nr. / Bestel-nr. / Ord. code / N° de cde. 921 741-001
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H-1131
107-001-05-699-X
hirschmann
a die het nu
HIRSCHMANN KABEL
AT*T coupler conductor
737001
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Untitled
Abstract: No abstract text available
Text: AceAxis chooses NXP Semiconductors’ DAC1628D for Remote Radio Head RRH base station solution Rev. 1 — 26 January 2012 White paper Document information Info Content Author(s) Maury Wood – General Manager, High-Speed Converters, NXP Semiconductors; Steve Cooper, Chief Technology Officer, AceAxis Ltd
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DAC1628D
DAC1628D
JESD204B-compliant
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rly1
Abstract: No abstract text available
Text: GSM-AUTO GSM Cont roller User m anual INDEX Descript ion. . . . . . . . . . . . . 2 Preparing t he SI M card. . . . . . . . . . . 3 I nst allat ion. . . . . . . . . . . . . . 4
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Untitled
Abstract: No abstract text available
Text: 27/05/2014 www.crouzet.com Modem communication plug and play solutions GSM Part number 88970119 For remote control of your application Automatic notification of alarms via SMS GSM Modem / email or on a PC with M3 ALARM software. Millenium 3 program can be downloaded, modified and sent
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modem850/900/1800/1900
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AT91SAM9G
Abstract: AT91SAM9G20
Text: 200 2009 9 Платформа UCDK для построения готовых решений Охранно-пожарная сигнализация Система контроля доступа Контроллер «умного» дома Промышленный
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AT91SAM9G20.
AT91SAM9G
AT91SAM9G20
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FAKRA
Abstract: FAKRA DAB FAKRA GPS ral 1001 FAKRA CABLE 7340 normes cable
Text: Les connecteurs SMB FAKRA II, capables d’une rotation de 360° et dotés d’un loquet de verrouillage secondaire, permettent un routage de câble facile entre les antennes et les unités multimédia tout en répondant aux exigences USCAR pour les systèmes télématiques intégrés
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co73403-5751
RG174/316
RG174/316
tats-Unis/KC/2012
FAKRA
FAKRA DAB
FAKRA GPS
ral 1001
FAKRA CABLE
7340
normes cable
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Untitled
Abstract: No abstract text available
Text: Installation Manual Type：Adaptateur（Familles：GS, P, MES, GSM, GST） Introduction Un adaptateur est une sorte d’unité d’alimentation commutée externe conçue pour relier extérieurement les pièces d’un équipement électrique. Les adaptateurs Mean Well peuvent être de bureau, muraux ou médicaux.
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TCXO akm
Abstract: SiT8002 epcos fbar gps SiT0100 Quartz 32768 mems oscillator silicon clocks "silicon clocks" toyocom tcxo metal package disc Piezoelectric crystal analog Quartz Clock
Text: A Review of the Recent Development of MEMS and Crystal Oscillators and Their Impacts on the Frequency Control Products Industry C.S. Lam Epson Electronics America, Inc., San Jose, California, USA cslam@eea.epson.com Abstract- Due to their high Q and temperature-stable properties,
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MINI-LINK ericsson
Abstract: samsung ltcc
Text: Innovate in a 4G world: RFIC designers discovering antennas Fred Gianesello STMicroelectronics, Technology R&D, Silicon Technology Development, Crolles, France Tuesday, April 9 IL2.1: Invited Speaker 3 Why is ST attending to EuCAP ? • Neither are we lost or did we come by chance:
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Untitled
Abstract: No abstract text available
Text: BfcfllHEWLJETT WLliM PACKARD H P 832 2 0 A D CS1800 T est S et Tfechnical Data 1710 MHz to 1880 MHz HP 8922 Series GSM RF Test Sets HP 83220A DCS1800 Test Set .1-:^ □ 0 Q S 0 g E 3 S lG ^ !Z3 QDCSCS m r i ; } Q - ; a •■ 0 3 i:- £ & E . m QCSi Gj 3
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CS1800
3220A
DCS1800
3220A/HP
DCS1800
6091-M70E
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12W Sot23
Abstract: 12W SMD SOT23 12w sot-23 sot-23 12w TA 7698 AP Micro SOIC8 sot23 12W LM3500 FBGA-49 SOT23 M7
Text: LM2796 a * f lM S t t n m * ä 6 = c a n iH ! àm m m m • t o j» i = s i s K m m m i £ 20 mA • m1 ENA & ENB > U l f i M M ä t # • f f a t m 3/2 « m s 2.7V M 5.5V • JJIt«r^ÄI«Ä(PWM)^ÄSf!|: • 100 Hz M 1 kHz i 8 ü m micro SMD 2.1 mm x 2.4 min x 0.6 mm
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lm2796
12W Sot23
12W SMD SOT23
12w sot-23
sot-23 12w
TA 7698 AP
Micro SOIC8
sot23 12W
LM3500
FBGA-49
SOT23 M7
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ET1-6T-SM20
Abstract: relay sm1 ET-1 24X1 EMS500X1 ETT1-6-SM21 EMD-108 EMS-500 relay et1 SPLITTER-COMBINER
Text: Low Cost E-Series RF Mixers Freq. Range (LO-RF MHz) LO Power (dBm) RF Power Up To (dBm) 0.05-200 0.1-250 0.04-400 0.1-500 0.5-500 0.5-500 0.5-500 0.5-500 1-500 1-500 2-500 2-500 2-590 5-800 5-500 1-600 2-600 1-750 890-915 1-1000 1-1000 5-1000 5-1000 5-1000
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5-1-SM20
5-1-SM21
ET1-1-SM20
ET1-1-SM21
ETM01-1
ET1-6T-SM20
relay sm1
ET-1
24X1
EMS500X1
ETT1-6-SM21
EMD-108
EMS-500
relay et1
SPLITTER-COMBINER
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Untitled
Abstract: No abstract text available
Text: What HEWLETT mLftM PACKARD SUicon Bipolar RFIC 100 MHz Vector Modulator Technical Data HPMX-2005 F eatu res • 25 - 250 MHz Output Frequency • -5 dBm Peak Poot • Unbalanced 50 Q. Ouptut Match • Internal 90° Phase Shifter • 5 V, 15 mA Bias • SO-16 Surface Mount
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HPMX-2005
SO-16
5091-7968E
5965-9104E
4447SÃ
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Untitled
Abstract: No abstract text available
Text: What H EW LETT* mLliM PACKARD Silicon Bipolar RFIC 100 MHz Vector Modulator Technical Data HPMX-2005 Features Plastic SO-16 Package • 25 - 250 MHz Output Frequency • -5 dBm Peak P o n t • Unbalanced 50 D. Ouptut Match • Internal 90° Phase Shifter
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HPMX-2005
SO-16
HPMX-2005
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Untitled
Abstract: No abstract text available
Text: APT8030LVFR • R A dvanced W .\A pow er Te c h n o lo g y " soov POWER MOS V 27 a 0.300Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8030LVFR
O-264
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APT20M22LVR
Abstract: No abstract text available
Text: APT20M22LVR • R A dvanced W .\A p o w e r Te c h n o l o g y “ 200V 100a 0.022Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M22LVR
O-264
APT20M22LVR
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Untitled
Abstract: No abstract text available
Text: A d v a n ced P o w er Te c h n o l o g y O D APT6040BNR APT6045BNR O s POWER MOS IV“ 600V 18.0A 0.40U 600V 17.0A 0.450 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS b ' dm ^GS V GSM PD TJ’TSTG All Ratings: T c = 25°C unless otherwise specified.
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APT6040BNR
APT6045BNR
O-247AD
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