smd transistor nc 61
Abstract: No abstract text available
Text: SUPERWORLD ELECTRONICS SW1 ESM Series – 1W Single & Dual Surface Mount DC-DC Converter SW1 ESM PRODUCT RANGE FEATURES • • • • • • • Higher 1W power in smaller package Low Cost, High Performance Industry standard 14-pin SMD device Single & Dual Isolated Outputs
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SW105S05ESMF
SW105S12ESMF
SW105S15ESMF
14-pin
SW105D12ESMF
SW105D15ESMF
SW112S05ESMF
MIL-HDBK-217E
smd transistor nc 61
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Geode LX800 / CS5536
Abstract: CS5536 AMD Geode CS5536 it8888g lx800 WINBOND w83627hg-aw AMD geode Realtek RTL8101L 10/100 Ethernet LAN geode cs5536 Geode lx800
Text: ESM-2545_20080730_020 ESM-2545 AMD Geode LX800 @ 0.9 W ETX Module One 200-pin up to 1GB DDR SDRAM Features n Onboard AMD Geode LX800 @ 0.9 W with 128K L2 Cache CPU n AMD Geode LX800 / CS5536 Chipset n One 200-pin SODIMM up to 1 GB DDR SDRAM n Dual View , TFT, LVDS,2-CH Audio
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ESM-2545
ESM-2545
LX800
200-pin
LX800
CS5536
RTL8101L
IT8888G
Geode LX800 / CS5536
AMD Geode CS5536
WINBOND w83627hg-aw
AMD geode
Realtek RTL8101L 10/100 Ethernet LAN
geode cs5536
Geode lx800
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Axial fans
Abstract: energy saving motors
Text: Energy-saving fans with ESM, ACi and iQ/iQ2-motor The engineer’s choice version 2012-10 The new generation of energy-saving fans Energy savings have become an important topic in almost every aspect of life. Our extended energy saving fan series, based on the energy saving motor ESM and the iQ-motor, offers high efficiency
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D-74673
D-78112
D-84030
Axial fans
energy saving motors
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11721
Abstract: No abstract text available
Text: Select a Location 3M Worldwide : United States Solutions for Electronic Specialty Markets ESM Product Catalog for Electronic Specialty Markets 3Mâ „¢ Electronic Specialty Markets New Product Releases 3Mâ „¢ Abrasives 3Mâ „¢ Adhesives, Cleaners &
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MNG18
MNG10
LR22190
E23438
11721
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Axialventilatoren
Abstract: No abstract text available
Text: Energiesparende Ventilatoren mit ESM, ACi und iQ/iQ2-Motor Die Wahl der Ingenieure Ausgabe 2012-10 Die neue Generation energiesparender Ventilatoren In nahezu allen Lebensbereichen sind heute Energieeinsparungen zu einem wichtigen Thema geworden. Unsere nun erweiterte energiesparende Ventilatorenreihe, basierend auf dem Energiesparmotor
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D-74673
D-78112
D-84030
Axialventilatoren
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ESM 713
Abstract: esm 231 transistor mj 4032 8051 midi 16X4 keypad matrix esm 107 RM EMK TR10 transistor ESM 30 eSM010
Text: eSM Series INTEGRATED DEVELOPMENT ENVIRONMENT V1.0 USER’S GUIDE ELAN MICROELECTRONICS CORP. Second Edition September 2004 Trademark Acknowledgments IBM is a registered trademark and PS/2 is a trademark of IBM. Microsoft, MS, MS-DOS, and Windows are registered trademarks of Microsoft Corporation.
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EASY-20
eSM020
ESM 713
esm 231
transistor mj 4032
8051 midi
16X4 keypad matrix
esm 107
RM EMK
TR10
transistor ESM 30
eSM010
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DF antenna
Abstract: transistor ESM 30 GPS Antenna dual ESM 3601 band Limiter antenna 20 GHz
Text: ESM DF 360 SERIES ANTENNA Full 360° spacial azimuth coverage is provided with a single antenna assembly. The DF 360 series provides a very high degree AOA accuracy with a minimum of three receiver channels. Receiver front end electronics; Preamplification, filtering, and limiting,
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Untitled
Abstract: No abstract text available
Text: ESM T F25L16PA 2S Flash ̈ 16 Mbit Serial Flash Memory with Dual FEATURES „ Single supply voltage 2.7~3.6V „ Standard and Dual „ Speed - Read max frequency: 50MHz - Fast Read max frequency: 50MHz / 86MHz / 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz / 100MHz
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F25L16PA
50MHz
50MHz
86MHz
100MHz
100MHz
172MHz
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Untitled
Abstract: No abstract text available
Text: ESM T F25L32QA 2S Flash ̈ 32 Mbit Serial Flash Memory with Dual and Quad FEATURES „ „ Single supply voltage 2.65~3.6V Standard, Dual and Quad SPI „ Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz / 86MHz / 104MHz - Fast Read Dual/Quad max frequency: 50MHz / 86MHz /
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F25L32QA
33MHz
50MHz
86MHz
104MHz
100MHz
172MHz
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Untitled
Abstract: No abstract text available
Text: ESM T F25L16QA 2S Flash ̈ 16 Mbit Serial Flash Memory with Dual and Quad FEATURES „ „ Single supply voltage 2.7~3.6V Standard, Dual and Quad SPI „ Speed - Read max frequency: 50MHz - Fast Read max frequency: 50MHz / 86MHz / 100MHz - Fast Read Dual/Quad max frequency: 50MHz / 86MHz /
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F25L16QA
50MHz
50MHz
86MHz
100MHz
100MHz
172MHz
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Untitled
Abstract: No abstract text available
Text: NICHIA STS-DA1-2569 <Cat.No.120730> N I CH I A CORPORATI ON SPECI FI CATI ON S FOR FULL COLOR LED N ESM 1 2 6 AT Pb-free Reflow Soldering Application RoHS Compliant RGB Sorted RGB die lit separately. NICHIA STS-DA1-2569 <Cat.No.120730> SPECIFICATIONS (1) Absolute Maximum Ratings
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STS-DA1-2569
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Realtek PCI LAN 8101L
Abstract: ESM-2740 W83629G 82801DB 82855gme W83628G winbond ethernet ich4 VT1616 transistor ESM 30
Text: ESM-2740 Intel 855GME Pentium® M / Celeron® M %48 -ODULE Features n Supports 90nm Intel® Pentium® M / Celeron® M CPU n Intel® 855GME / ICH4 Chipset Supports Intel® Pentium® M / Celeron® M CPU Intel® 82855GME Chipset n One 200-pin SODIMM up to 1 GB DDR SDRAM
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ESM-2740
855GME
82855GME
200-pin
RTL8101L
W83628G
W83629G
82801DB
8101L
Realtek PCI LAN 8101L
ESM-2740
82801DB
82855gme
W83628G
winbond ethernet
ich4
VT1616
transistor ESM 30
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esm118
Abstract: ESM117 esm 117 DARLINGTON ESM 30 Darlington npn boitier to3 CM1111
Text: ESM 117 ESM 118 NPN SILICON DARLING TON TRANSISTORS, E P ITA XIAL BASE TRANSISTORS D ARLING TON NPN SILIC IU M , BASE EPITAXIEE Compì, o f ESM 161, ESM 162 PRE LIM IN A R Y D ATA NOTICE P R E LIM IN AIR E M onolithic construction Construction monolithique
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CB-19
ESM117
esm118
ESM117
esm 117
DARLINGTON ESM 30
Darlington npn
boitier to3
CM1111
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ESM1350
Abstract: FIR31 r2 137 sm 889 ESM135 ESM 470
Text: ESM135 ESM 137 NPN S ILIC O N TR A N S IS TO R S . E P IT A X IA L BASE TRANSISTORS S ILIC IU M NPN, BASE EPITAXIEE ESM 139 Compl. of ESM 136, ESM 138, ESM 140 P R E L IM IN A R Y D A T A N OTICE PR ELIM IN A IR E - LF large signal power amplification Am plification BF grands signaux de puissance
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ESM135
T0-220
drawingCB-117on
CB-117
10/is
ESM1350
FIR31
r2 137
sm 889
ESM 470
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ESM261
Abstract: esm262 ci 7410 ESM 261
Text: ESM 261 ESM 262 PNP SILICON DARLINGTON TRANSISTORS, EPITAXIAL BASE TR AN S IS TO R S D A R L IN G T O N S IL IC IU M PNP, B A S E E P IT A X IE E Compi. of ESM 217, 218 PRELIM INARY DATA N O T IC E P R E L IM IN A IR E Monolithic construction C o nstruction m o n o lith iq u e
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O-220
drawingCB-117on
CB-117
ESM261
esm262
ci 7410
ESM 261
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esm 117
Abstract: ESM218 TRANSISTORS SILICIUM, BASE EPITAXIEE
Text: ESM 217 ESM 218 NPN SILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS SILIC IU M D ARLIN G TO N NPN, BASE EPITAXfEE Compl. o f ESM 2 6 1 ,2 6 2 P R E L IM IN A R Y D A TA NOTICE P R E LIM IN A IR E Monolithic construction Construction m onolithique
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OCR Scan
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O-220
drawingCB-117on
CB-117
100mA
300/JS
esm 117
ESM218
TRANSISTORS SILICIUM, BASE EPITAXIEE
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c3v5
Abstract: 2N6101 A 6099 6099 transistor ESM 2N6099 CARACTERISTIQUES transistor bf 422 NPN
Text: 2I\I 6099 NPN SILICON TRANSISTOR, HOMOBASE |^| g -j Q-| TR A N S IS TO R N P N S IL IC IU M , H O M O B A S E Compl. of ESM 141, ESM 142 • LF large signal power amplification A m plification B F grands signaux de puissance V - High current switching CEO
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2N6101
O-220
CB-117on
CB-117
c3v5
2N6101
A 6099
6099
transistor ESM
2N6099
CARACTERISTIQUES transistor bf 422 NPN
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c3v5
Abstract: Bf 417 g transistor A 6099 2N6101 2N6099 6101 JI40 N2468
Text: 2I\I 6099 NPN SILICON TRANSISTOR, HOMOBASE |^| g -j Q-| TR A N S IS TO R N P N S IL IC IU M , H O M O B A S E Compl. of ESM 141, ESM 142 • LF large signal power amplification A m plification B F grands signaux de puissance V - High current switching CEO
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2N6101
O-220
CB-117on
CB-117
c3v5
Bf 417 g transistor
A 6099
2N6101
2N6099
6101
JI40
N2468
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ESM214
Abstract: ESM213 ESM259 EST 213
Text: ESM 213 ESM 214 NPN S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TR AN S IS TO R S D A R L IN G T O N S IL IC IU M N P N , B A S E E P IT A X IE E Compì, o f ESM 259, 260 P R E L IM IN A R Y D A TA N O T IC E P R E L IM IN A IR E
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T0-220
drawingCB-117on
CB-117
ESM214
ESM213
ESM259
EST 213
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ESM260
Abstract: ESM259 ESM213
Text: ESM 259 ESM 260 PNP SILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TR AN S IS TO R S D A R L IN G T O N S IL IC IU M PNP, B A S E E P IT A X IE S Compì, of ESM 213, 214 P R E L IM IN A R Y D A TA N O T IC E PR EL IM IN A IR E Monolithic construction
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OCR Scan
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T0-220
drawingCB-117on
CB-117
stated260
ESM260
ESM259
ESM213
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ESM117
Abstract: ESM162 max-h21E ESM16 esm 117 esm 906 data
Text: ESM 161 ESM162 PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS PNP D ARLIN G TO N SILIC IU M , BASE EPITAXIEE Compl. ESM 117, 118 P R E L IM IN A R Y D A TA N OTICE PR EL IM IN A IRE Monolithic construction Construction m onolithique
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ESM162
CB-19
ESM117
ESM162
max-h21E
ESM16
esm 117
esm 906 data
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PO32
Abstract: PQ32-30 pq3230
Text: TDK Power Transformers, Power Inductors PQ32/30 CORE TYPE 180W, 50kHz SHAPES AND DIMENSIONS PIN CONFIGURATION A (Lead wires) K (Primary: lead wires, secondary: pin terminals) Dimensions in mm [inches] Es(V) Rated output current Esm(V) lo (A) Rated output
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PQ32/30
50kHz)
PQ32/30-SE35RSAA
PQ32/30-SF30RSAA
PQ32/30-SH22RSAA
PQ32/30-SJ15RSAA
PQ32/30-SK12RSAA
PQ32/30-SL9R5SAA
PQ32/30-SM8R0SAA
PQ32/30-SN7R5SAA
PO32
PQ32-30
pq3230
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Untitled
Abstract: No abstract text available
Text: Æwtron PRODUCT DEVICES.INC. 1177 BLUE HERON BLVD.• RIVIERA BEACH, FLORIDA 33404 TEL: 407; 840-4311 • TLX: 51-3435 • FAX: (407 863-5946 N-CHANNEL ENHANCEMENT MÜS FET 200V, 50A, 0.051 ABSOLUTE MAXIMUM RATINGS PARAMETER (R esM .O M n) UNITS SYMBOL Drain-source Vo It.(1)
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97CC
Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
Text: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection
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CB-19
97CC
transistor ESM 16
transistor ESM 30
ESM18
transistor ESM 18
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