SCPB
Abstract: 2399C MKPX6 gpib 10/100 lg audio mkds yig oscillator 100MHZ 10DB 50MHZ
Text: Contents 2399C Spectrum Analyzer Programming Manual Note 2399C uses the identical command set to 2399B instruments. Hence references in this manual to ‘2399B‘ apply equally to ‘C’ versions. Aeroflex International Ltd. 2007 No part of this document may be reproduced or transmitted in any form
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2399C
2399B
2399B`
Rev00,
SCPB
MKPX6
gpib 10/100
lg audio
mkds
yig oscillator
100MHZ
10DB
50MHZ
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D 2394
Abstract: te 2395 transistor D 2394 bdl 494 yig oscillator MKPX 2395A TM 1628 driver display SA97 mkds
Text: 2394A/2395A Spectrum Analyzers Programming Manual Note 2394A and 2395A use the identical command set to 2394 and 2395 instruments. Hence references in this manual to ‘2394 ‘ and ‘2395’ apply equally to ‘A’ versions. Aeroflex International Ltd. 2007
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394A/2395A
manual04455
D 2394
te 2395
transistor D 2394
bdl 494
yig oscillator
MKPX
2395A
TM 1628 driver display
SA97
mkds
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p382x
Abstract: airport radar smd diode 9j
Text: WAffi H E W L E T T milHMP A C K A R D Low Cost Surface M ount P ow er Lim iters Application Note 1050 Abstract M any receivers are often a t risk of h avin g their front ends burned out by high power RF and microwave stray signals. T his paper presents practical
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MSM51V16100
Abstract: No abstract text available
Text: O K I Semiconductor MSIWI51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V 16100 is a new generation d y n am ic o rgan ized as 16,777,216-w o rd x 1-bit. The technology used to fabricate the M S M 51V I6100 is OKI's C M O S silicon g ate process technology.
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MSIWI51VI6100_
216-Word
MSM51V16100
MSM51VI6100
cycles/64ms
MSM51V16100
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bq2054
Abstract: No abstract text available
Text: rui UNITRODE _ bq2054 Lithium Ion Fast-Charge 1C Features General Description >* S a fe charge o f L ith iu m Ion b a t tery pack s T h e b q 2 0 5 4 L i t h i u m Io n F a s t C h arge IC is d esign ed to optim ize c h a r g in g o f lith iu m ion L i-Io n
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bq2054
bq2054
regulat11
16-pin
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BQ2031
Abstract: No abstract text available
Text: _ bq2031 BENCHMARQ Lead-Acid Fast Charge IC >• Pulse-w idth m odulation control Features - ► Conforms to b attery m anufacturers’ charge recom m endations for cyclic and float charge >■ P in selectable charge algorithm s - Two-Step Voltage w ith
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bq2031
bq2031
16-pin
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circuit diagram of card lock system using ic 74ls
Abstract: T1017 mfm decoder SCJRI 21-CLOCK of op-amp LF 398 P6460 tr 84603
Text: DP8460/DP8450 National Semiconductor DP8460 Data Separator/DP8450 Data Synchronizer General Description Th e DP8460 Data Separator is designed for application in disk drive memory system s, and depending on system re quirem ents, m ay be located either in the drive or in the con
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DP8460/DP8450
DP8460
Separator/DP8450
DP8464
P8460"
L/F/51
circuit diagram of card lock system using ic 74ls
T1017
mfm decoder
SCJRI
21-CLOCK
of op-amp LF 398
P6460
tr 84603
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BQ2031
Abstract: No abstract text available
Text: _ bq2031 | ^ j BENCHMARQ Lead-Acid Fast Charge IC >• Pulse-width modulation control Features - >■ Conforms to battery manufacturers’ charge recommendations for cyclic and float charge > Pin selectable charge algorithms - Two-Step Voltage with
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bq2031
bq2031
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Untitled
Abstract: No abstract text available
Text: H M 5 1 1 6 1 0 0 L S e r i e s LowPower Version Product Preview 16,777,216-Word x 1-Bit Dynamic Random A c c e s s Memory • DESCRIPTION H M 5116100L J Series The Hitachi HM 5116100 is a C M O S dynamic RAM organized 16,777,216 words x 1-bit. It employs the most advanced C M O S technology lor high performance and
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216-Word
5116100L
HM5116100L
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A302 x6
Abstract: TC5116
Text: 65,536 W O R D x 16 BIT D Y N A M I C R A M DESCRIPTION T h e T C 5 1 1 6 6 4 J / Z i s t h e n e w g e n e r a t i o n d y n a m i c R A M o r g a n i z e d 6 5 , 5 3 6 w o r d s by 16 bi t s. The T C 5 1 1 6 6 4 J / Z u t i l i z e s T O S H I B A ' S C M O S S i l i c o n g a t e p r o c e s s t e c h n o l o g y a s w el l a s a d v a n c e d c i r c u i t
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Untitled
Abstract: No abstract text available
Text: _ bq2054 BENCHMARQ Lithium Ion Fast-Charge 1C Features General Description >- S afe c h arg e of L ith iu m Io n b a t te r y p acks T h e b q 2 0 5 4 L ith iu m Io n F a s tC h a rg e IC is d e sig n ed to optim ize c h a r g i n g o f l i t h i u m io n L i-I o n
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bq2054
bq2054
16-pin
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g16b
Abstract: D71613 TGWR
Text: N EC ELECTRONICS INC Tfi D 1b457SS5 0015^3 □ D T ^ S 2 t S 5 -C 3 |iPD71613 CMOS Bus C o n t r o l l e r P r e l im in a r y I n f o r m a t io n Description Pin Configuration The n P D 7 1 6 1 3 is a high performance C M O S bus controller for the nPD70616 V60 microprocessor. The
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1b457SS5
uPD71613
nPD70616
iPD70616
b427525
1ST31
T-52-33-03
g16b
D71613
TGWR
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FR-T1A
Abstract: No abstract text available
Text: _ bq2054 BENCHMARQ Lithium Ion Fast-Charge 1C Features General Description >• S afe c h arg e o f L ith iu m Io n b a t te r y p acks T h e b q 2 0 5 4 L ith iu m Io n F a s tC h a rg e IC is d e sig n ed to optim ize c h a r g i n g o f l i t h i u m io n L i-I o n
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bq2054
FR-T1A
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Untitled
Abstract: No abstract text available
Text: • « Y U N O Ä T • HY51V17400B,HY51 V16400B 4Ux4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V17400B
V16400B
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Untitled
Abstract: No abstract text available
Text: M g L M ic r o February 1997 PRELIMINARY L in e a r ML4423 3-Phase and Single/2-Phase Variable Speed AC Induction Motor Controller GENERAL DESCRIPTION FEATURES The ML4423 AC induction motor controller provides the PWM sinewave waveforms necessary for controlling three
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ML4423
ML4423
500Hz
150Hz
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Untitled
Abstract: No abstract text available
Text: High P erform ance 1MX4 CMOS DRAM H A S4C14405 Il IM X 4 C M 0 S EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interva • Organization: 1,048,576 words x 4 bit • High speed - RAS-only o r CAi>-before-RAS refresh • Read-modify-write
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S4C14405
26/20-pin
AS4C14405-60JC
26/20-pin
0Q34HC
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Untitled
Abstract: No abstract text available
Text: G A Z E LL E M I C R O C I R C U I T S INC S'ÎE ]> • 3fl3bOB5 OOOOO'îl ô W Ê G k l T^i-OD r m Q A 121OE Low-Skew TTL Clock Doubler Two-Phase Clock Generator J è gazelle General Description Features Gazelle's GA1210E is a low-skew TTL-level clock doubler chip. It
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121OE
GA1210E
16-pin
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tmm27256ad
Abstract: TC53257P TC57256AD TC57256AD-12 TC57256AD-120 TMM23256P
Text: ïliillS ill mllÊÊÊÈÈ 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY PRELIMINARY ¡DESCRIPTION] The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri cally programmable read only memory. For read operation, the TC57256AD' s access time
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TC57256AD
120ns,
30mA/8
TD57256AD.
A9-12V
TC57256ADâ
TC57256AD-120
tmm27256ad
TC53257P
TC57256AD-12
TC57256AD-120
TMM23256P
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BQ2031
Abstract: No abstract text available
Text: bq2031 BENCHMARQ Lead-Acid Fast-Charge IC Features - Ideal for high-efficiency switch-mode power conversion >• Conforms to b attery m an u factu r ers' charge recom m endations for cyclic an d float charge >- Pin-selectable charge algorithm s - Two-Step Voltage w ith
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bq2031
75V/R
50V/R
bq2031
16-pin
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BENCHMARQ MICROELECTRONICS
Abstract: BQ2031
Text: _ bq2031 BENCHMARQ Lead-Acid Fast-Charge IC Features - Ideal for high-efficiency switch-mode power conversion >• Conforms to b attery m an u factu r ers' charge recom m endations for cyclic an d float charge >- Pin-selectable charge algorithm s
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IRS11
Abstract: ire5
Text: H D 6 3 1 4 - Universal Pulse Processor UPP Description 24 16-bit universal reg isters (UDR) 16 I/O term in als (8 in tern al reg isters for pulse I/O control are also provided) In terru p ts ca n occur a t th e fallin g or ris
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16-bit
10-bit
1024-byte
IRS11
ire5
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chqb
Abstract: HY51V16164B
Text: •HYUNDAI HY51V16164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y51V 16164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V16164B utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques
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HY51V16164B
16-bit
16164B
16-bit.
42/42pin
1AD59-10-MAY95
0Q315
chqb
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4096D
Abstract: 40964
Text: 4096 4096x 1 DYNAMIC RANDOM ACCESS MEMORY G E N E R A L DES C R IP TIO N — The 4096D C is a 4096 b it dynam ic Random Access Mem o ry organized as 4096 one -b it words. This device is designed u tiliz in g the single transistoi dynam ic m em ory cell. A unique address m u ltip le xin g and latching technique perm its the packaging o f the
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4096x
4096D
16-pin
40964
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TDA 7240 equivalent
Abstract: TDA 7240 pin diagram
Text: ^^PÌ|^^§ÌPS!H1Ì!|Ì|PIPS§I§|ÌSÌS TOSHIBA % L O G I C / M E M O R Y ^7240 0Q2QÔÛ4 S * T 0 S 2 8 4,194,304 WORD x 1 BIT fiYNAMIC RAM * This is advanced information and specifications are subject to change without notice. 7 " ^ ¿ - “2 3 - / S ’"
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TC514100J/Z
TC514100J/Z-80
TC5141OOJ/Zâ
T-46-23-15
TDA 7240 equivalent
TDA 7240 pin diagram
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