AN1294
Abstract: LET20015 LET90015
Text: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION
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LET20015
IS-97
PowerSO-10RF
LET90015
LET20015
AN1294
LET90015
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Untitled
Abstract: No abstract text available
Text: LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION
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LET20030S
IS-97
LET20030S
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PDF
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AN1294
Abstract: LET20030S
Text: LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION
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LET20030S
IS-97
LET20030S
AN1294
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PDF
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AN1294
Abstract: LET20015 LET90015
Text: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION
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LET20015
IS-97
PowerSO-10RF
LET90015
LET20015
AN1294
LET90015
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PDF
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huawei microwave Antennas
Abstract: HUAWEi antenna IP clock* huawei Huawei MW Antenna
Text: HUAWEI MG323-B GSM LCC Module Hardware Guide Issue 04 Date 2012-07-02 Huawei Technologies Co., Ltd. provides customers with comprehensive technical support and service. For any assistance, please contact our local office or company headquarters. Huawei Technologies Co., Ltd.
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MG323-B
huawei microwave Antennas
HUAWEi antenna
IP clock* huawei
Huawei MW Antenna
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china mobile phone circuit diagram
Abstract: gsm signal amplifier circuit diagram GSM module circuit diagram circuit diagram transceiver signal gsm GSM transceiver WCDMA duplexer D2027 mobile phone schematic diagram gsm switch epcos gsm module datasheet
Text: Direct Link 1092 Applications & Cases RF modules for multimode multi-band mobile phones October 2007 Front-end solutions for world phones RF filter modules for GSM/WCDMA mobile phones must be highly integrated for worldwide use in all frequency bands. EPCOS supplies
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AE366
Abstract: mmic e3
Text: E-pHEMT MMIC AE366 Product Features Application • 30 ~ 2200MHz • GaAs E-pHEMT MMIC • Higher linearity, Higher Gain • Low Noise Figure • High Max input power • SOT-89 SMD Type package • Higher productivity • Lower manufacturing cost • Pb Free / RoHS Standard
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AE366
2200MHz
OT-89
OT-89
AE366
2200MHz
mmic e3
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mmic e3
Abstract: AE365
Text: E-pHEMT MMIC AE365 Product Features Application • 30 ~ 2200MHz • GaAs E-pHEMT MMIC • Higher linearity • Low Noise Figure • High Max input power • SOT-89 SMD Type package • Higher productivity • Lower manufacturing cost • Pb Free / RoHS Standard
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AE365
2200MHz
OT-89
OT-89
AE365
2200MHz
mmic e3
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on 5297 transistor
Abstract: transistor c 5299 100B6R8CW 293D106X9035D 100B3R3BW capacitor philips motorola s 114-8 100B120GW 100B100GW "capacitor philips"
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AS
on 5297 transistor
transistor c 5299
100B6R8CW
293D106X9035D
100B3R3BW
capacitor philips
motorola s 114-8
100B120GW
100B100GW
"capacitor philips"
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smd transistor marking z3
Abstract: smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2
Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090AR3
smd transistor marking z3
smd transistor marking j6
J585 mosfet
smd transistor marking z8
smd transistor z4
smd transistor marking mf
capacitor philips
Z9 TRANSISTOR SMD
J216
transistor 6 pin SMD Z2
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RESISTOR SMD 2020
Abstract: ids 2560 mmic e3 wifi amplifier circuit
Text: E-pHEMT MMIC Product Features AE362 Application 0B 1B • 30 ~ 6000MHz • GaAs E-pHEMT MMIC • Higher linearity • Low Noise Figure • High Max input power • SOT-89 SMD Type package • Higher productivity • Lower manufacturing cost • Pb Free / RoHS Standard
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AE362
6000MHz
OT-89
OT-89
AE362
6000MHz
RESISTOR SMD 2020
ids 2560
mmic e3
wifi amplifier circuit
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PDF
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mmic e3
Abstract: AE364
Text: E-pHEMT MMIC AE364 Product Features Application • 30 ~ 6000MHz • GaAs E-pHEMT MMIC • Higher linearity • Low Noise Figure • High Max input power • SOT-89 SMD Type package • Higher productivity • Lower manufacturing cost • Pb Free / RoHS Standard
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AE364
6000MHz
OT-89
OT-89
AE364
6000MHz
mmic e3
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PDF
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AE384
Abstract: ids 2560 RESISTOR SMD 2020 mmic e3
Text: E-pHEMT MMIC AE384 Product Features Application • 30 ~ 6000MHz • GaAs E-pHEMT MMIC • Higher linearity • Low Noise Figure • High Max input power • SOT-89 SMD Type package • Higher productivity • Lower manufacturing cost • Pb Free / RoHS Standard
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AE384
6000MHz
OT-89
OT-89
AE384
6000MHz
ids 2560
RESISTOR SMD 2020
mmic e3
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PDF
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SAC405
Abstract: GRM155R71C104KA01 SARA-G340 SARA-G300 SARA-U260
Text: SARA-G3 and SARA-U2 series GSM/GPRS and GSM/EGPRS/HSPA Cellular Modules System Integration Manual Abstract This document describes the features and the system integration of the SARA-G3 series GSM/GPRS cellular modules and the SARA-U2 GSM/EGPRS/HSPA cellular modules.
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UBX-13000995
SAC405
GRM155R71C104KA01
SARA-G340
SARA-G300
SARA-U260
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Untitled
Abstract: No abstract text available
Text: Internal SMD FM Antenna Module Part No. M10385 Product Specification Applications • Mobile phones / Smart phones • Notebooks / Netbooks / Media Tablets • Portable Media Players PMPs • Digital Photo/Media Frames • Portable Navigation Devices (PNDs)
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M10385
Descri8797
10MD-0038-1-PS
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CIRCUIT DIAGRAM FOR gsm modem with sim 300
Abstract: sim gsm modem circuit diagram gsm modem sim 300 interface with microcontroller full automatic Washing machines microcontroller CIRCUIT DIAGRAM FOR sim 300 gsm modem RF toy plane circuit diagram MTSMC-G-F1 gsm modem sim 300 block diagram GSM based motor control circuit diagram SMA RF connector semi-rigid
Text: SocketModem GSM/GPRS Embedded Data/Fax Wireless Modem MTSMC-G-F1 – Global GSM/GPRS Class 10, 900/1800 MHz MTSMC-G-F2 – Global GSM/GPRS Class 10, 850/1900 MHz Developer’s Guide Global SocketModem GSM/GPRS Developer’s Guide MTSMC-G-F1 – GSM/GPRS Class 10, 900/1800 MHz
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S000297A,
CIRCUIT DIAGRAM FOR gsm modem with sim 300
sim gsm modem circuit diagram
gsm modem sim 300 interface with microcontroller
full automatic Washing machines microcontroller
CIRCUIT DIAGRAM FOR sim 300 gsm modem
RF toy plane circuit diagram
MTSMC-G-F1
gsm modem sim 300 block diagram
GSM based motor control circuit diagram
SMA RF connector semi-rigid
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transistor motorola 114-8
Abstract: motorola s 114-8 smd mosfet z8 transistor smd z8 SMD MOSFET N Z4 motorola 114-8
Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF18090AR3 N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies
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MRF18090A/D
MRF18090AR3
transistor motorola 114-8
motorola s 114-8
smd mosfet z8
transistor smd z8
SMD MOSFET N Z4
motorola 114-8
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Mobile applications
Abstract: epcos D5011 b3202 y2 d2024 a013 SMD b84132 rm8 epcos transformer EPCOS 230 00 O D1043
Text: Application Guide 2008 Information & Communications Electronic Components for Mobile Applications www.epcos.com Welcome to the World of Electronic Components and Modules EPCOS is a leading manufacturer of electronic components, modules and systems. Our broad portfolio includes capacitors, inductors and ferrites, EMC filters, sensors
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transistor motorola 114-8
Abstract: Transistor z1 transistor motorola 351 motorola s 114-8 465B GSM1800 MRF18090A MRF18090AR3 motorola 1815 motorola 114-8
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF18090AR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies
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MRF18090A/D
MRF18090AR3
transistor motorola 114-8
Transistor z1
transistor motorola 351
motorola s 114-8
465B
GSM1800
MRF18090A
MRF18090AR3
motorola 1815
motorola 114-8
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smd wb1 transistor
Abstract: smd transistor wb1 smd wb1 smd wb2 sot-23 wb2 wb1 sot-23 WB1 SOT23 J585 mosfet smd transistor M3 sot23 J585
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AS
smd wb1 transistor
smd transistor wb1
smd wb1
smd wb2
sot-23 wb2
wb1 sot-23
WB1 SOT23
J585 mosfet
smd transistor M3 sot23
J585
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smd transistor M3 sot23
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090B
MRF18090BS
smd transistor M3 sot23
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transistor motorola 114-8
Abstract: motorola s 114-8 Z9 TRANSISTOR SMD transistor J585 smd wb1 transistor smd wb1 motorola 114-8
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AS
transistor motorola 114-8
motorola s 114-8
Z9 TRANSISTOR SMD
transistor J585
smd wb1 transistor
smd wb1
motorola 114-8
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transistor J585
Abstract: J585 bc847 sot 23 bc847 chip SMD SOT23 cw BC847 smd BC847 SOT23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090B
MRF18090BS
transistor J585
J585
bc847 sot 23
bc847 chip
SMD SOT23 cw
BC847 smd
BC847 SOT23
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transistor J585
Abstract: transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090B
MRF18090BS
transistor J585
transistor smd z8
Z9 TRANSISTOR SMD
transistor SMD Z2
BC847 smd
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