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    ERSE RDS 80 Search Results

    ERSE RDS 80 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TS3USB221ERSER Texas Instruments High-Speed USB 2.0 (480-Mbps) 1:2 Multiplexer/Demultiplexer Switch With Single Enable 10-UQFN -40 to 85 Visit Texas Instruments Buy
    TS3USB31ERSER Texas Instruments High-Speed USB 2.0 (480-Mbps) 1-Port Switch With Single Enable 8-UQFN -40 to 85 Visit Texas Instruments Buy

    ERSE RDS 80 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SOT23 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN4106F ISSUE 2 – DECEMBER 1995 PARM ARKING DETAIL - MZ S D G ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-So ur ce Vo l t ag e V DS 60 V Contin uo us Dr ain Cur r en t at T am b=25°C


    Original     		PDF ZVN4106F

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN2106A ISSUE 2 – M ARCH 94 FEATURES * 60 Volt VDS * RDS on =2Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS 60 V Contin uo us Drain Cur r en t at T am b=25°C


    Original     		PDF ZVN2106A

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVNL110A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on =3Ω * Low threshold voltage D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e


    Original     		PDF ZVNL110A

    ZVN3310A

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN3310A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on = 10Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS 100 V Contin uo us Drain Cur r en t at T am b=25°C


    Original     		PDF ZVN3310A ZVN3310A

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVNL120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω * Low threshold D G APPLICATIONS * Telephone handsets S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT


    Original     		PDF ZVNL120A

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVP2110A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS -100 V Contin uo us Drain Cur r en t at T am b=25°C


    Original     		PDF ZVP2110A -100V

    Untitled

    Abstract: No abstract text available
    Text: SOT223 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN2110G ISSUE 3 – OCTOBER 1995 ✪ FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED D S PARTMARKING DETAIL COMPLEMENTARY TYPE - D ZVN2110 ZVP2110G G ABSOLUTE M AXIM UM RATINGS. PA RA M ETER


    Original     		PDF OT223 ZVN2110G ZVN2110 ZVP2110G

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN0124A ISSUE 1 – M ARCH 94 FEATURES * 240 Volt VDS * RDS on =16Ω APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e


    Original     		PDF ZVN0124A

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN2110A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on = 4Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS 100 V Contin uo us Drain Cur r en t at T am b=25°C


    Original     		PDF ZVN2110A

    ZVP2106A

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVP2106A ISSUE 2 – M ARCH 94 FEATURES * 60 Volt VDS * RDS on =5Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS -60 V Contin uo us Drain Cur r en t at T am b=25°C


    Original     		PDF ZVP2106A ZVP2106A

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN3306A ISSUE 2 – M ARCH 94 FEATURES * 60 Volt VDS * RDSon =5Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS 60 V Contin uo us Drain Cur r en t at T am b=25°C


    Original     		PDF ZVN3306A

    SP 5001 IC

    Abstract: smd diode Uj diode 5004 DIODE SMD CE SMD5001
    Text: SEMTECH CORP 2IE D DODSBST 1 - 3 BEMTECH CORPORATION ^ MICROELECTRONICS DIVISION SMD SMD SMD SMD 2 N-Channel Power MOSFETs, IN HERMETIC ISOLATED PACKAGE Ideally suited for applications such as switching power supplies, motor controls, inverters, choppers,


    OCR Scan     		PDF SM883 A13T13T SP 5001 IC smd diode Uj diode 5004 DIODE SMD CE SMD5001

    Untitled

    Abstract: No abstract text available
    Text: SOLITRON DEVICES INC bl D E I fl3bflt,D2 DD0D327 NO.: S0T84A Devices, Inc. S P E C I F I C A T I O N S 1 f T- 3 9 - 1 3 TYPE: POWER M O S F E T N-CHANNEL CASE: T O -3 MAXIMUM RATINGS . 800 V Drain Current, Continuous 0 Tc • 25°C .


    OCR Scan     		PDF DD0D327 S0T84A

    1C00

    Abstract: 2SK805
    Text: P o w er F-MOS FET 2SK 805 2SK805 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low O N r e s is ta n c e R Ds on : R Ds (on) = 0 .1 2 il (ty p .) • H igh sw itch in g r a te : t f = 120ns (ty p .) • N o se c o n d a ry b reak d o w n


    OCR Scan     		PDF 2SK805 120ns 0D171D0 1C00 2SK805

    YTFP250

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE it - YTFP250 MOSI INDUSTRIAL APPLICATIONS Unit ln nun HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 1&9MAX. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR ^12±Û 8 DRIVE APPLICATIONS. A FEATURES:


    OCR Scan     		PDF YTFP250 070fl 50ain VDS-10V, ID-16A ID-16A IDR-30A YTFP250

    2SK1257

    Abstract: contact id converter
    Text: Power F-MOS FET 2SK1257 2SK1257 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON r e s is ta n c e R Ds on : R ds (on) l = 0 . 0 2 4 i l (ty p .) Unit: mm • H igh sw itch in g r a te : t<= 3 2 0 n s (ty p .) • N o s e c o n d a ry b reak d o w n


    OCR Scan     		PDF 2SK1257 024ft 320ns Tc-25 2SK1257 contact id converter

    2SK1257

    Abstract: SS3200 TF320
    Text: P o w er F-MOS FET 2SK1257 2S K 1257 Silicon N-channel Power F-M O S F E T • Features ■ Package Dimensions • Low ON r esista n ce Rus on : R DS (on) l = 0 .0 2 4 il (typ.) Unit: mm • H igh sw itch in g r a te : t f= 3 2 0 n s (ty p .) • No s e c o n d a ry b reak d o w n


    OCR Scan     		PDF 2SK1257 024il 320ns Tc-25 i32flS2 2SK1257 SS3200 TF320

    NF C 93-400

    Abstract: 2SK1944-01 SC-65 A2297
    Text: 2SK1944-01 F U JI PO W ER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • l ow on-resistance • No secondary breakdown • l ow driving power • High voltage • V gs = ±30V Guarantee • Avalanche-proof


    OCR Scan     		PDF 2SK1944-01 SC-65 20Kil) NF C 93-400 2SK1944-01 SC-65 A2297

    IRF140

    Abstract: No abstract text available
    Text: PR ELIM IN A R Y T M SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 28 AMP 100 VOLT 0.077 a N-CHANNEL POWER MOSFET Designer’s: Data: Sheet FEATURES: • • • • • • •


    OCR Scan     		PDF 670-SSDI IRF140 O-257

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : Power MOSFET . » TYPE NAME : 2SK2808-01 MR SPËC. NO, Fuji Electric Co.,Ltd. T his Specification is subject to c h a n g e w ithout notice. DATE ' NAM E APPROVED Fuji Electric Co.,Ltd. CHECKED - 1 DWG. NO. DRAW N /


    OCR Scan     		PDF 2SK2808-01 0257-R-003a

    Untitled

    Abstract: No abstract text available
    Text: 2SK2254-01L. S FUJI POWER M O S-FET IM-CHANNEL SILICON POWER MOS-FET _ _ Ä - F A P - I I A S E R I E S • Features • Hi gh speed switching • Lbiiv on-resistance • Nc secondary breakdown • Low driving power • Hi gh voltage


    OCR Scan     		PDF 2SK2254-01L. 20Kf2)

    2SK963

    Abstract: 2SK9
    Text: 2SK963 Power F-MOS FET 2SK963 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • L ow ON r e s is ta n c e R us on : R ds (on) = 0 .4 5 i l (ty p .) • High sw itc h in g r a te : t f = 4 5 n s (ty p .) • No se c o n d a ry b reak d o w n


    OCR Scan     		PDF 2SK963 2SK9

    2SK1030

    Abstract: 2SK1030A
    Text: Power F-MOS FET 2SK1030, 2SK1030A 2SK1030, 2SK1030A Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON r e s is ta n c e R ds on : R ds (on) = 3 .0 f i (ty p .) Unit: mm • H igh sw itch in g r a te : ti = 4 0 n s ( ty p .)


    OCR Scan     		PDF 2SK1030, 2SK1030A 2SK1030 2SK1030 2SK1030A

    2SK1214

    Abstract: 5N60 bt353 bt353s5 H3228
    Text: Power F-MOS FET 2SK1214 2SK1214 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R Ds on : RDs (on) l = 0 .0 6 f i (ty p .) Unit: mm • H igh sw itc h in g r a te : t f= 110ns (ty p .) • N o se c o n d a ry b re a k d o w n


    OCR Scan     		PDF 2SK1214 110ns bT353S5 0G17140 2SK1214 5N60 bt353 H3228