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    ERM APD Search Results

    ERM APD Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DC2900A Analog Devices 16-ch LTC6561 Demo Board w/APD Visit Analog Devices Buy
    ADL5317ACPZ-REEL7 Analog Devices APD Bias Controller and Curren Visit Analog Devices Buy
    LT3571IUD#PBF Analog Devices 75V DC/DC Conv for APD Bias Visit Analog Devices Buy
    LT3571IUD#TRPBF Analog Devices 75V DC/DC Conv for APD Bias Visit Analog Devices Buy
    LT3905IUD#TRPBF Analog Devices Boost DC/DC Conv w/ APD C Mon Visit Analog Devices Buy
    LT3571EUD#PBF Analog Devices 75V DC/DC Conv for APD Bias Visit Analog Devices Buy

    ERM APD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APD 1300 2,5 GHz

    Abstract: JDSU avalanche photodiode ingaas ghz JDSU ERM ingaas apd photodetector apd gain control InGaAs 1550 photodiode transimpedance amplifier jdsu avalanche photodiode avalanche photodiode jdsu photodetector apd dwdm
    Text: Product Bulletin 10 Gb/s Automatic Gain Control AGC APD Receiver Module ERM 598 The ERM 598 is a 10 Gb/s avalanche photodiode receiver with automatic gain control (AGC) for long-haul SONET/SDH OC-192/STM-64 DWDM applications. The receiver module integrates a low capacitance, low dark current


    Original     		PDF OC-192/STM-64 APD 1300 2,5 GHz JDSU avalanche photodiode ingaas ghz JDSU ERM ingaas apd photodetector apd gain control InGaAs 1550 photodiode transimpedance amplifier jdsu avalanche photodiode avalanche photodiode jdsu photodetector apd dwdm

    avalanche photodiode receiver

    Abstract: JDSU ERM InGaAs apd photodiode ingaas apd photodetector avalanche photodiode ghz InGaAs APD, 10 Gb/s, -30 dBm 877-550-JDSU transimpedance amplifier 7.5 GHz 10 gb APD receiver APD 1550 nm photodetector
    Text: Product Bulletin ERM 598 10 Gb/s Automatic Gain Control AGC APD Receiver Module The ERM 598 is a 10 Gb/s avalanche photodiode receiver with automatic gain control (AGC) for long-haul SONET/SDH OC-192/STM-64 DWDM applications. The receiver module integrates a low capacitance, low dark current


    Original     		PDF OC-192/STM-64 avalanche photodiode receiver JDSU ERM InGaAs apd photodiode ingaas apd photodetector avalanche photodiode ghz InGaAs APD, 10 Gb/s, -30 dBm 877-550-JDSU transimpedance amplifier 7.5 GHz 10 gb APD receiver APD 1550 nm photodetector

    receiver avalanche 1550 fiber 2.5

    Abstract: No abstract text available
    Text: Product Bulletin 10 Gb/s Avalanche Photodiode APD Micro Receiver ERM 578 LMx The JDS Uniphase APD Micro Receiver (ERM 578 LMx) is a 10 Gb/s avalanche photodiode receiver in a small form factor package with differential outputs. Consisting of a 10 Gb/s avalanche photodiode and a high gain SiGe


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    ERM547

    Abstract: JDSU Transponder apd receiver 10 gb APD receiver JDSU ERM jdsu apd avalanche photodiode ingaas ghz Photodiode apd high sensitivity jdsu avalanche photodiode jds uniphase receiver
    Text: Product Bulletin 2.5 Gb/s SONET/SDH Mini-DIL Optical Receiver Module ERM 537/547 The JDS Uniphase ERM 537/547 series consists of small form factor SFF 2.5 Gb/s SONET/ SDH optical receivers with InGaAs PIN or avalanche photodiodes and high bandwidth linear transimpedance amplifiers. They are


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    InGaAs Epitaxx APD

    Abstract: Photodiode apd high sensitivity epitaxx apd 10gb avalanche photodiode receiver 578BKX 1550 nm APD optical receivers avalanche photodiode DWDM InGaAs apd photodiode 10 gb APD receiver EPITAXX
    Text: Product Bulletin ERM 578BKX 10 Gb/s Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +8V All specifications without connector. Parameter APD Breakdown Voltage, Vb


    Original     		PDF 578BKX InGaAs Epitaxx APD Photodiode apd high sensitivity epitaxx apd 10gb avalanche photodiode receiver 578BKX 1550 nm APD optical receivers avalanche photodiode DWDM InGaAs apd photodiode 10 gb APD receiver EPITAXX

    InGaAs Epitaxx APD

    Abstract: receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver
    Text: Product Bulletin ERM 578XCX 10 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vee = -5.2V All specifications without connector. Parameter APD Breakdown


    Original     		PDF 578XCX 578XCX. InGaAs Epitaxx APD receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver

    avalanche photodiode DWDM

    Abstract: 1550 nm APD optical receivers
    Text: Product Bulletin ERM 578BKX 10 Gb/s Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +8V Parameter Measurement Conditions Min APD Breakdown Voltage, Vb Id = 10 µA


    Original     		PDF 578BKX 10Gb/s avalanche photodiode DWDM 1550 nm APD optical receivers

    JDSU ERM

    Abstract: k 547 apd 1550, sensitivity 30 dBm transimpedance amplifier 10 GHz ERM547 sc 547 jdsu apd
    Text: COMMUNICATIONS COMPONENTS 2.5 Gb/s Mini-DIL APD Optical Receiver Module ERM 547 Key Features • Small form factor • Butterfly or surface-mount configurations • Differential outputs • Transimpedance gain: - LD: 1500 Ω - HD: 4500 Ω - IHDD: 1800 Ω


    Original     		PDF 498-JDSU 5378-JDSU JDSU ERM k 547 apd 1550, sensitivity 30 dBm transimpedance amplifier 10 GHz ERM547 sc 547 jdsu apd

    InGaAs Epitaxx APD

    Abstract: InGaAs apd photodiode Photodiode apd high sensitivity InGaas PIN photodiode, 1550 sensitivity APD bias gain avalanche photodiode receiver InGaAs Epitaxx linear APD, applications, bias supply receiver avalanche 1550 fiber 2.5 10 gb APD receiver
    Text: Product Bulletin ERM 537/547 2.5 Gb/s SONET/SDH Mini-DIL Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω All specifications without connector. Parameter Responsivity APD PIN Dark Current


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    578XCX

    Abstract: avalanche photodiode bias and high voltage
    Text: Product Bulletin ERM 578XCX 10 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vee = -5.2V All specifications without connector. Parameter Measurement


    Original     		PDF 578XCX 10Gb/s avalanche photodiode bias and high voltage

    InGaAs Epitaxx APD

    Abstract: EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver
    Text: Product Bulletin ERM 577 2.5 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vss = -5.2V All specifications without connector. Parameter Measurement Conditions


    Original     		PDF 1E-10 InGaAs Epitaxx APD EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver

    InGaAs Epitaxx APD

    Abstract: Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity epitaxx apd 10gb datasheet apd epitaxx LC InGaAs avalanche photodiode ghz InGaAs apd photodiode photodiode Avalanche photodiode 40 gb InGaAs 1550 photodiode transimpedance amplifier
    Text: Product Bulletin ERM 578DKX 10 Gb/s High Sensitivity Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +5.7V All specifications without connector. Parameter


    Original     		PDF 578DKX InGaAs Epitaxx APD Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity epitaxx apd 10gb datasheet apd epitaxx LC InGaAs avalanche photodiode ghz InGaAs apd photodiode photodiode Avalanche photodiode 40 gb InGaAs 1550 photodiode transimpedance amplifier

    JDSU ERM

    Abstract: avalanche photodiode free space JDSU avalanche photodiode ingaas ghz avalanche photodiode jdsu 10 gb APD receiver avalanche photodiode ingaas ghz 070AW avalanche photodiode receiver apd 1550, sensitivity 30 dBm InGaAs APD photodiode 1550
    Text: COMMUNICATIONS COMPONENTS 10 Gb/s Avalanche Photodiode APD Micro Receiver ERM 578 LMx Key Features • Sensitivity of -27.3 dBm • TIA gain of 5.5 kΩ (differential) • Very small form factor MSA coplanar package • Low cost • Available with FC, LC or SC connectors


    Original     		PDF ERM578LMX 498-JDSU 5378-JDSU JDSU ERM avalanche photodiode free space JDSU avalanche photodiode ingaas ghz avalanche photodiode jdsu 10 gb APD receiver avalanche photodiode ingaas ghz 070AW avalanche photodiode receiver apd 1550, sensitivity 30 dBm InGaAs APD photodiode 1550

    JDSU ERM

    Abstract: jdsu apd avalanche photodiode jdsu ingaas apd photodetector photodetector apd dwdm APD 1550 nm photodetector
    Text: Product Bulletin 10 Gb/s Avalanche Photodiode APD High Dynamic Range (HDR) Receiver ERM 528 HDR The JDS Uniphase 10 Gb/s Avalanche Photodiode (APD) High Dynamic Range (HDR) Receiver is a 10 Gb/s APD optical receiver consisting of an APD photodiode, a GaAsHBT TIA, and a


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    NDL5200

    Abstract: 2c ti apd LD236
    Text: PRELIMINARY DATA SHEET PHOTO DIODE MODULE NDL5171P, NDL5171P1, NDL5171P2 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 100 ¡im GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5171P, NDL5171P1 and NDL5171P2 are G erm anium avalanche photo diode m odules w ith m ultim ode fiber.


    OCR Scan     		PDF NDL5171P, NDL5171P1, NDL5171P2 NDL5171P1 NDL5171P2 NDL5171PC, NDL5171P1C NDL5171P2C. GI-50/125) NDL5200 2c ti apd LD236

    Ge APD

    Abstract: J16A-18A-R100U J16A avalanche photodiodes
    Text: J}ò E G zG J U D S O N _ Ge Avalanche Photodiodes APDs 0.8 to 1.5 um Description Multiplication Characteristics T he J16A series G erm anium A va­ lan ch e P hotodiodes are designed for h ig h ­ speed applications a t 800 an d 1300 nm.


    OCR Scan     		PDF 1300nm, 30MHz 0DDD32fl Ge APD J16A-18A-R100U J16A avalanche photodiodes

    C30902EH

    Abstract: TO13
    Text: Silicon A valanche Photodiode, * H erm etically sealed packages Si APD—S tan d ard Type Technical Specification Pai D urata C3Ö902EH Photo Standard S e n s Diam. Packag« mm TO-13 T est c o n d itìo n i: T • 2 ? ’C 0.5 Resp. 900 nm A/W Dark Curr. ld nA


    OCR Scan     		PDF C30902EH 830nm) TO13

    Untitled

    Abstract: No abstract text available
    Text: LIGHTWAVE CO M PO N E N TS & MODULES Terminology and Measuring Methods for Detectors 1. ABSOLUTE MAXIMUM RATINGS A bsolute m axim um ratings are lim iting values w hich should not be exceeded under any circum stances. Exceeding th ese ratings m ay lead to im m ediate destruction or p erm anent deterioration of the device.


    OCR Scan     		PDF

    2.5G APD

    Abstract: 5.8 ghz receiver IC
    Text: PS5931 Front-end Receiver Description T he PS5931 is a front-end receiver. Features • H igh speed operation up to 2.5G b/s • H erm etically sealed, 14-pin low profile butterfly package • Internal G aA s p re-am plifier IC • T ransim pedance 600 to 10 0 0 ÎÎ


    OCR Scan     		PDF PS5931 PS5931 14-pin 60VTYP) 2.5G APD 5.8 ghz receiver IC

    Lem LT 300 - t

    Abstract: NDL5200 L5104
    Text: N E C h2E D ELECTRONICS INC • b427525 0030074 22T M N E C E PRELIMINARY DATA SHEET NEC PHOTO DIODE NDL5103P, NDL5103P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>50 G ERM AN IU M A V A LA N CH E PHOTO DIODE M O DULE DESCRIPTION NDL5103P and NDL5103P1 are Germanium Avalanche Photo Diodes with optical fiber, especially designed for detectors of


    OCR Scan     		PDF b427525 NDL5103P, NDL5103P1 NDL5103P NDL5103P1 NDL5103P NDL51Q3P1 NDL5100C NDL5104P1 NDL5102 Lem LT 300 - t NDL5200 L5104

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC b5E D • b42752S 003Ô07Û T7S H N E C E DATA SHEET |\|E C Z PHOTO DIODE NDL5104P, NDL5104P1 E U C T H O N D E V IC E 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>1 0 0 am G ERM ANIUM AVALAN CH E PHOTO DIODE M OD ULE D E S C R IP T IO N


    OCR Scan     		PDF b42752S NDL5104P, NDL5104P1 L5104 NDL5104P1 NDL51M b427S25 NDL5100 NDL5100C NDL5100P

    Untitled

    Abstract: No abstract text available
    Text: Silicon PIN Chip and Packaged Diodes EEBAIph APD Series Features • Switch and Attenuator Applications ■ Voltage Ratings to 1000 Volts ■ Low Rs and Low Capacitance Designs ■ Surface Mount Microwave Packages ■ Tightly Controlled PIN Characteristics


    OCR Scan     		PDF APD9920-202. APD5035, APD5070 APD9960

    Untitled

    Abstract: No abstract text available
    Text: FLAT PANEL PLASMA DISPLAY MODULE MODEL APD-192G088 192 by 88 graphics display with drive electronics The APD-192G088 display module is a full field dot matrix display with 192 columns and 88 rows. It includes drive electronics designed to interface easily with C R T


    OCR Scan     		PDF APD-192G088 APD-192G088 -192G

    DALE RESISTOR NETWORKS

    Abstract: Mil-T-23648 m8340102 APD-256M026-1 APD-222G007 CRCW DALE APD-256M026 APD-480M021-1
    Text: A C O M PA N Ÿ OF G eneral Index/S urface Mount Index T hick Film Resistor N etw orks, Resistor/Capacitor Netw orks, C apacitor N etw o rks, Ladder N etw orks and Custom Phone: 402 371 -0080 Dale Phone: (818) 781-1642 Dale, Techno Division M83401/04, 05,06, 07, 08, 09, resistor


    OCR Scan     		PDF M83401/04, MIL-R-83401, M8340101, M8340102, MDM14, MDM16, DFM14, DALE RESISTOR NETWORKS Mil-T-23648 m8340102 APD-256M026-1 APD-222G007 CRCW DALE APD-256M026 APD-480M021-1