Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
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MRF658/D
MRF658
MRF658/D*
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ERIE CAPACITORS
Abstract: SAHA Mica capacitors MRF658 erie capacitor SAHA trimmer 3-30 pf nippon capacitors GRH710 MURATA ERIE CAPACITOR MOTOROLA 381 equivalent
Text: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
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MRF658/D
MRF658
MRF658/D*
ERIE CAPACITORS
SAHA Mica capacitors
MRF658
erie capacitor
SAHA
trimmer 3-30 pf
nippon capacitors
GRH710
MURATA ERIE CAPACITOR
MOTOROLA 381 equivalent
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MRF658
Abstract: SAHA Mica capacitors ERIE CAPACITORS nippon capacitors MURATA ERIE CAPACITOR GX-0600-55-22 MOTOROLA 381 equivalent CAPACITOR MURATA 420 NPN Silicon RF Transistor murata erie
Text: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
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MRF658/D
MRF658
MRF658
MRF658/D*
MRF658/D
SAHA Mica capacitors
ERIE CAPACITORS
nippon capacitors
MURATA ERIE CAPACITOR
GX-0600-55-22
MOTOROLA 381 equivalent
CAPACITOR MURATA
420 NPN Silicon RF Transistor
murata erie
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MRF321
Abstract: ferroxcube 56-590-65
Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.
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MRF321
400MHz
1N4001
56-590-65/4B)
VK200-19/4B
MRF321
ferroxcube 56-590-65
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MRF323
Abstract: ferroxcube 56-590-65
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF323 Product Image Designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range.
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MRF323
56-590-65/4B)
VK200-19/4B
MRF323
ferroxcube 56-590-65
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SD1895-03
Abstract: murata 2.4 GHz filter SD1895-3
Text: SD1895-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY ALL GOLD METALLIZED SYSTEM HIGH RELIABILITY AND RUGGEDNESS COOMON BASE P OUT = 15 W MIN. WITH 9.2 dB GAIN .250 x .320 2LFL M170 epoxy sealed
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SD1895-03
SD1895-3
SD1895-03
murata 2.4 GHz filter
SD1895-3
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SD1895-3
Abstract: SD1895-03
Text: SD1895-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY ALL GOLD METALLIZED SYSTEM HIGH RELIABILITY AND RUGGEDNESS COOMON BASE POUT = 15 W MIN. WITH 9.2 dB GAIN .250 x .320 2LFL M170 epoxy sealed
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SD1895-03
SD1895-3
SD1895-03
SD1895-3
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ERIE CAPACITORS
Abstract: GX-0600-55-22 MURATA ERIE CAPACITOR erie capacitor 2443 MOTOROLA transistor SAHA Mica capacitors Erie TRIMMER CAPACITOR SAHA erie .33 400 MRF658
Text: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF658 The RF Line NPN Silicon RF Power Transistor D esigned for 12.5 Voit U H F large-signal, common emitter, class-C amplifier applications in industrial and commercial F M equipment operating to 520 MHz. 65 W, 512 MHz
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MRF658
MRF658
ERIE CAPACITORS
GX-0600-55-22
MURATA ERIE CAPACITOR
erie capacitor
2443 MOTOROLA transistor
SAHA Mica capacitors
Erie TRIMMER CAPACITOR
SAHA
erie .33 400
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ERIE CAPACITORS
Abstract: MURATA ERIE CAPACITOR ERIE CAPACITORS TYPE K erie capacitor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line NPN Silico n RF Pow er Transistor Designed for 12.5 Volt UHF large-signal, common emitter, c la s s-C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Specified 12.5 Volt, 512 MHz Characteristics
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MRF658
ERIE CAPACITORS
MURATA ERIE CAPACITOR
ERIE CAPACITORS TYPE K
erie capacitor
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transistor D 2581
Abstract: ERIE CAPACITORS TYPE K ERIE CAPACITORS N5060 erie .33 400 Erie TRIMMER CAPACITOR CAPACITOR MURATA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N P N Silicon RF Pow er Transistor D e sign e d for 12.5 Volt U H F large-signal, com m on emitter, c la s s - C amplifier applications in industrial and commercial F M equipment operating to 520 MHz. • Specified 12.5 Volt, 512 M H z Characteristics
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MRF658
transistor D 2581
ERIE CAPACITORS TYPE K
ERIE CAPACITORS
N5060
erie .33 400
Erie TRIMMER CAPACITOR
CAPACITOR MURATA
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Untitled
Abstract: No abstract text available
Text: CHIP TRIMMER CAPACITORS TZC03 SERIES T h is n e w lo w p r o file c h ip tr im m in g c a p a c ito r is s p e c if ic a lly d e s ig n e d t o m e e t t h e r e q u ir e m e n ts o f h ig h d e n s it y s u r fa c e m o u n t a p p lic a tio n s a n d a u to m a t e d p la c e m e n t e q u ip m e n t.
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TZC03
TZC03Z060DD169
TZC03R100DD169
TZC03P200ED169
N1200
100VDC
220VDC
200g-gm
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ERIE ceramic capacitor
Abstract: MURATA ERIE CAPACITOR murata SAW murata ceramic capacitor erie ERIE murata ceramic
Text: HIGH FREQUENCY CLOCK OSCILLATORS SH Series SH2128-1 P IN 1 ^ FUNCTIO N O utput Com plim ent 7 Ground Vee 8 O utput 14 +5 VCr 2 ,6 ,9 ,1 3 Ground 515 max. m (20.70 m ax.) t 515 max. (t&08 max.) * SPECIFICATIONS ' MODEL SH2128AF-1 Saw oscillator High frequency
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SH2128-1
SH2128AF-1
200MHz
500MHz
250ppm
120mA
ERIE ceramic capacitor
MURATA ERIE CAPACITOR
murata SAW
murata ceramic capacitor erie
ERIE murata ceramic
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vk200 choke
Abstract: MVM010W MVM010
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J F E T V H F/U H F Am plifiers N -Chan nel — Depletion 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage vgs 25 Vdc Forward Gate Current •g f 10 mAdc Total Device Dissipation @ TA = 25°C
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b3b72SS
vk200 choke
MVM010W
MVM010
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rde 090
Abstract: BFJ309LT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifier Transistor N-Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE GATE 1 DR AIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc ta 10 mAdc Symbol Max Unit
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MMBFJ309LT1
MMBFJ310LT1
rde 090
BFJ309LT1
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CL-21 capacitor
Abstract: BFJ309LT1 4505 IC equivalent BFJ310LT1 vk200 choke Cl-21 225
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J F E T VHF/UHF Am plifier Transistor MMBFJ309LT1 MMBFJ310LT1 N -C h a n n e l 2 SOURCE MAXIMUM RATINGS Rating D rain-Source Voltage G ate-S ource Voltage Gate Current Symbol Value Unit V DS 25 Vdc VG S 25 Vdc !g 10 mAdc
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MMBFJ309LT1
MMBFJ310LT1
O-236AB)
BFJ309LT1
BFJ310LT1
CL-21 capacitor
BFJ309LT1
4505 IC equivalent
BFJ310LT1
vk200 choke
Cl-21 225
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF323 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V
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MRF323
MRF323
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vk200 coil
Abstract: FERROXCUBE VK200 jmc 5201
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts
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MRF321
vk200 coil
FERROXCUBE VK200
jmc 5201
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ferroxcube 56-590-65
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF323 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 20 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V
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MRF323
MRF323
ferroxcube 56-590-65
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jmc 5201
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts
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MRF321
jmc 5201
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vk200 coil
Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON
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MRF321
vk200 coil
jmc 5201
ferroxcube 56-590-65
VK200-19
FERROXCUBE VK200
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transistor c 2316
Abstract: No abstract text available
Text: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF323 The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 2 0 0 - 5 0 0 M H z frequency range. 20 W, 400 MHz RF POWER TRANSISTOR
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MRF323
MRF323
transistor c 2316
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Transistor Equivalent list
Abstract: Transistor AND DIODE Equivalent list capacitor feed-through
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very
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OT439A
LXE16350X
RA439
Transistor Equivalent list
Transistor AND DIODE Equivalent list
capacitor feed-through
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Transistor Equivalent list
Abstract: diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 erie feedthrough capacitors BDT85 IN4148 LXE16350X
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R • Interdigitated structure provides high emitter efficiency
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LXE16350X
MBC423
OT439A.
Transistor Equivalent list
diode IN4148
Transistor AND DIODE Equivalent list
copper permittivity
TRIMMER capacitor
by239-800
erie feedthrough capacitors
BDT85
IN4148
LXE16350X
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Transistor D 2494
Abstract: fj series capacitor panasonic J103 transistor Panasonic FJ Series Capacitor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F8 97 The RF Line N P N S ilic o n R F P o w e r T ra n s is to r Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating
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MRF897
Transistor D 2494
fj series capacitor panasonic
J103 transistor
Panasonic FJ Series Capacitor
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