BROADBAND TRANSFORMERS AND POWER
Abstract: erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403
Text: Order this document by AN878/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN878 VHF MOS POWER APPLICATIONS Prepared by: Roy Hejhall Sr. Staff Engineer INTRODUCTION The assumption is made that the reader is familiar with the types, construction, and electrical characteristics of
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AN878/D
AN878
BROADBAND TRANSFORMERS AND POWER
erie redcap capacitors
MRF317 LINEAR RF AMPLIFIER
C band FET transistor s-parameters
AN878
MRF317 linear amplifier
MRF317 LINEAR RF BOARD
erie redcap
"common drain" amplifier impedance matching
Arco 403
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MRF321
Abstract: ferroxcube 56-590-65
Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.
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MRF321
400MHz
1N4001
56-590-65/4B)
VK200-19/4B
MRF321
ferroxcube 56-590-65
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MRF327
Abstract: No abstract text available
Text: <^s,m.i-Contiu.ctoi ZPtoauati, Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the
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MRF327
VK200-19/4B
10i22
80-mil-Thick
MRF327
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redcap
Abstract: No abstract text available
Text: t U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor MRF329 . . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range.
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MRF329
1000pFUNELCOFeedthru
VK200-19/4B
redcap
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MRF323
Abstract: ferroxcube 56-590-65
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF323 Product Image Designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range.
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MRF323
56-590-65/4B)
VK200-19/4B
MRF323
ferroxcube 56-590-65
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MRF327
Abstract: 80WF
Text: MRF327 o I NPN SILICON RF POWER TRANSISTOR . designed primarily stages in the 100-500 o Guaranteed Performance Output Built-in wideband @ 400 MHz, Match with 30:1 Network Metal lization for System for 100–500 Collector-Emitter Voltag~J~I.? Emitter-Base
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MRF327
AR120NA
MRF327
80WF
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RF MOSFET
Abstract: MRF134
Text: tSsmi-donduato'i ZPtoaucti, {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MRF134 . . designed for wideband large-signal amplifier and oscillator applications up
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MRF134
Arco406,
Arco403,
Arco402,
5-20pF
1N5925A
VK-200
19/4B
RF MOSFET
MRF134
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF323 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V
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MRF323
MRF323
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VK200 FERRITE
Abstract: MRF329
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF329 The RF Line NPN Silicon RF Power TVansistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF329
56-590-65/4B)
VK200-19/4B
MRF329
VK200 FERRITE
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VK-211
Abstract: sd1415 thomson microwave transistor thomson rf power transistor
Text: S G S —THOMSON OMC D | 7^ 237 □DOGOS'l 7 | O ^^3-/3 ~~r\ SOHO STATE MICROWAVE SD1415 THOMSONCSF COMPONENTS CORPORATION Montgomeryville, PA 18936 • {215 855-8400 ■ TWX 510-661-7299 VHF CO M M UNICATIONS TRANSISTOR DESCRIPTION SSS device type SD1415 is a 12.5 volt epitaxial silicon NPN planar
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SD1415
SD1415
VK211/07-3B
3M-K-6098
VK-211
thomson microwave transistor
thomson rf power transistor
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transistor 7808
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF134 N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance
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MRF134
MRF134,
MRF134
68-ohm
AN215A
transistor 7808
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Johanson 2320
Abstract: 565-9065 FERROXCUBE VK200
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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56-590-65/4B)
VK200-19/4B
80-mii-Thick
MRF325
Johanson 2320
565-9065
FERROXCUBE VK200
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Motorola AN211
Abstract: motorola 6810 aN211 MOTorola atc 7515
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance
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MRF134
68-ohm
AN215Afor
Motorola AN211
motorola 6810
aN211 MOTorola
atc 7515
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jmc 5201
Abstract: 5659065 565-9065 jmc 5501 56-590-65 VK200-19
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —
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MRF325
jmc 5201
5659065
565-9065
jmc 5501
56-590-65
VK200-19
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jmc 5201
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts
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MRF321
jmc 5201
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VK-200-19
Abstract: VK200 ferrite choke
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF326 . . . designed primarily for wideband large-signal output amplifier stages In the 100 to 500 MHz frequency range. • • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts
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MRF326
MRF326
RF326
VK-200-19
VK200 ferrite choke
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MRF327
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band
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80-mil-Thick
MRF327
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VK200 ferrite choke
Abstract: jmc 5201
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —
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VK200-19/4B
MRF329
VK200 ferrite choke
jmc 5201
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vk200 coil
Abstract: FERROXCUBE VK200 jmc 5201
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts
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MRF321
vk200 coil
FERROXCUBE VK200
jmc 5201
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5201 IC equivalent
Abstract: MRF326 UG-58
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF326 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. 40 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER
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MRF326
MRF326
5201 IC equivalent
UG-58
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56-590-65
Abstract: MRF325 jmc 5201 565-9065
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts
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MRF325
56-590-65
jmc 5201
565-9065
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transistor 0190
Abstract: j301 J298
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF338 Designed primarily for wideband large-signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics
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MRF338
MRF338
transistor 0190
j301
J298
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF Pow er Tran sisto r MRF326 . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts
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MRF326
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motorola rf Power Transistor mrf317
Abstract: hfc4
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output amplifier stages in 30 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W
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Carrier/120
MBF317
motorola rf Power Transistor mrf317
hfc4
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