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    ERIE REDCAP Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    GCM033C70J104KE02J Murata Manufacturing Co Ltd 0201 (0603M) X7S (EIA) 6.3Vdc 0.1μF±10% Visit Murata Manufacturing Co Ltd
    GRT155R61A106ME13J Murata Manufacturing Co Ltd 0402 (1005M) X5R (EIA) 10Vdc 10μF±20% Visit Murata Manufacturing Co Ltd
    GRT21BD72A225KE13K Murata Manufacturing Co Ltd 0805 (2012M) X7T (EIA) 100Vdc 2.2μF±10% Visit Murata Manufacturing Co Ltd
    KC355QD7LF224KH01K Murata Manufacturing Co Ltd X7T (EIA) 1000Vdc 0.22μF±10% Visit Murata Manufacturing Co Ltd
    KC355WD7LG274MH01K Murata Manufacturing Co Ltd X7T (EIA) 1250Vdc 0.27μF±20% Visit Murata Manufacturing Co Ltd

    ERIE REDCAP Datasheets Context Search

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    BROADBAND TRANSFORMERS AND POWER

    Abstract: erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403
    Text: Order this document by AN878/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN878 VHF MOS POWER APPLICATIONS Prepared by: Roy Hejhall Sr. Staff Engineer INTRODUCTION The assumption is made that the reader is familiar with the types, construction, and electrical characteristics of


    Original     		PDF AN878/D AN878 BROADBAND TRANSFORMERS AND POWER erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403

    MRF321

    Abstract: ferroxcube 56-590-65
    Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.


    Original     		PDF MRF321 400MHz 1N4001 56-590-65/4B) VK200-19/4B MRF321 ferroxcube 56-590-65

    MRF327

    Abstract: No abstract text available
    Text: <^s,m.i-Contiu.ctoi ZPtoauati, Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the


    Original     		PDF MRF327 VK200-19/4B 10i22 80-mil-Thick MRF327

    redcap

    Abstract: No abstract text available
    Text: t U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor MRF329 . . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range.


    Original     		PDF MRF329 1000pFUNELCOFeedthru VK200-19/4B redcap

    MRF323

    Abstract: ferroxcube 56-590-65
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF323 Product Image Designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range.


    Original     		PDF MRF323 56-590-65/4B) VK200-19/4B MRF323 ferroxcube 56-590-65

    MRF327

    Abstract: 80WF
    Text: MRF327 o I NPN SILICON RF POWER TRANSISTOR . designed primarily stages in the 100-500 o Guaranteed Performance Output Built-in wideband @ 400 MHz, Match with 30:1 Network Metal lization for System for 100–500 Collector-Emitter Voltag~J~I.? Emitter-Base


    Original     		PDF MRF327 AR120NA MRF327 80WF

    RF MOSFET

    Abstract: MRF134
    Text: tSsmi-donduato'i ZPtoaucti, {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MRF134 . . designed for wideband large-signal amplifier and oscillator applications up


    Original     		PDF MRF134 Arco406, Arco403, Arco402, 5-20pF 1N5925A VK-200 19/4B RF MOSFET MRF134

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF323 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V


    OCR Scan     		PDF MRF323 MRF323

    VK200 FERRITE

    Abstract: MRF329
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF329 The RF Line NPN Silicon RF Power TVansistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    OCR Scan     		PDF MRF329 56-590-65/4B) VK200-19/4B MRF329 VK200 FERRITE

    VK-211

    Abstract: sd1415 thomson microwave transistor thomson rf power transistor
    Text: S G S —THOMSON OMC D | 7^ 237 □DOGOS'l 7 | O ^^3-/3 ~~r\ SOHO STATE MICROWAVE SD1415 THOMSONCSF COMPONENTS CORPORATION Montgomeryville, PA 18936 • {215 855-8400 ■ TWX 510-661-7299 VHF CO M M UNICATIONS TRANSISTOR DESCRIPTION SSS device type SD1415 is a 12.5 volt epitaxial silicon NPN planar


    OCR Scan     		PDF SD1415 SD1415 VK211/07-3B 3M-K-6098 VK-211 thomson microwave transistor thomson rf power transistor

    transistor 7808

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF134 N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance


    OCR Scan     		PDF MRF134 MRF134, MRF134 68-ohm AN215A transistor 7808

    Johanson 2320

    Abstract: 565-9065 FERROXCUBE VK200
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    OCR Scan     		PDF 56-590-65/4B) VK200-19/4B 80-mii-Thick MRF325 Johanson 2320 565-9065 FERROXCUBE VK200

    Motorola AN211

    Abstract: motorola 6810 aN211 MOTorola atc 7515
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance


    OCR Scan     		PDF MRF134 68-ohm AN215Afor Motorola AN211 motorola 6810 aN211 MOTorola atc 7515

    jmc 5201

    Abstract: 5659065 565-9065 jmc 5501 56-590-65 VK200-19
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —


    OCR Scan     		PDF MRF325 jmc 5201 5659065 565-9065 jmc 5501 56-590-65 VK200-19

    jmc 5201

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts


    OCR Scan     		PDF MRF321 jmc 5201

    VK-200-19

    Abstract: VK200 ferrite choke
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF326 . . . designed primarily for wideband large-signal output amplifier stages In the 100 to 500 MHz frequency range. • • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts


    OCR Scan     		PDF MRF326 MRF326 RF326 VK-200-19 VK200 ferrite choke

    MRF327

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band


    OCR Scan     		PDF 80-mil-Thick MRF327

    VK200 ferrite choke

    Abstract: jmc 5201
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —


    OCR Scan     		PDF VK200-19/4B MRF329 VK200 ferrite choke jmc 5201

    vk200 coil

    Abstract: FERROXCUBE VK200 jmc 5201
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts


    OCR Scan     		PDF MRF321 vk200 coil FERROXCUBE VK200 jmc 5201

    5201 IC equivalent

    Abstract: MRF326 UG-58
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF326 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. 40 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER


    OCR Scan     		PDF MRF326 MRF326 5201 IC equivalent UG-58

    56-590-65

    Abstract: MRF325 jmc 5201 565-9065
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts


    OCR Scan     		PDF MRF325 56-590-65 jmc 5201 565-9065

    transistor 0190

    Abstract: j301 J298
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF338 Designed primarily for wideband large-signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics


    OCR Scan     		PDF MRF338 MRF338 transistor 0190 j301 J298

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF Pow er Tran sisto r MRF326 . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts


    OCR Scan     		PDF MRF326

    motorola rf Power Transistor mrf317

    Abstract: hfc4
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output amplifier stages in 30 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W


    OCR Scan     		PDF Carrier/120 MBF317 motorola rf Power Transistor mrf317 hfc4