ERIE ceramic capacitor
Abstract: erie capacitor AM1011-070 AM1011-70 S042 Erie feedthrough
Text: AM1011-070 . . . . RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 70 W MIN. WITH 6.7 dB GAIN
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AM1011-070
AM1011-70
AM1011-070
ERIE ceramic capacitor
erie capacitor
AM1011-70
S042
Erie feedthrough
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Erie feedthrough
Abstract: erie capacitor Electrolytic Capacitor 50v ERIE ceramic capacitor AM1011-070 AM1011-70 S042 FEEDTHRU capacitor ceramic capacitor 4.7 mf 50v
Text: AM1011-070 . . . . RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 70 W MIN. WITH 6.7 dB GAIN
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AM1011-070
AM1011-70
AM1011-070
Erie feedthrough
erie capacitor
Electrolytic Capacitor 50v
ERIE ceramic capacitor
AM1011-70
S042
FEEDTHRU capacitor
ceramic capacitor 4.7 mf 50v
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erie feedthrough capacitors
Abstract: ERIE ceramic capacitor variable capacitor erie capacitor ERIE ceramic thomson capacitor AM80912-085 S042 CAPACITOR 1500 Erie feedthrough
Text: AM80912-085 . . . . RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 85 W MIN. WITH 7.5 dB GAIN
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AM80912-085
AM80912-085
erie feedthrough capacitors
ERIE ceramic capacitor
variable capacitor
erie capacitor
ERIE ceramic
thomson capacitor
S042
CAPACITOR 1500
Erie feedthrough
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erie feedthrough capacitors
Abstract: philips catalog potentiometer 5130 BDT85 IN4148 LXE16350X SC15 MCD621 6/erie 1250-003
Text: DISCRETE SEMICONDUCTORS DATA SHEET LXE16350X NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor
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LXE16350X
SCA53
127147/00/02/pp12
erie feedthrough capacitors
philips catalog potentiometer
5130
BDT85
IN4148
LXE16350X
SC15
MCD621
6/erie 1250-003
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Untitled
Abstract: No abstract text available
Text: 5 7 . SGS-mOMSON A M80912-085 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS REFRACTO RY/G OLD METALLIZATION EM ITTER SITE BALLASTED 5:1 VSW R CAPABILITY LOW THERMAL RESISTANCE IN PU T/O U TPU T MATCHING OVERLAY GEOM ETRY METAL/CERAMIC H ERM ETIC PACKAGE
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M80912-085
AM80912-085
13214F
J2CI237
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON :iii g M (gi A M 1011-070 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P out = 70 W MIN. WITH 6.7 dB GAIN
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AM1011-070
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erie feedthrough capacitors
Abstract: No abstract text available
Text: Btl04/105 40 ns Monolithic CMOS 12-bit D/A Converter • • • • • • • • Product Description Applications Distinguishing Features 40 ns Maximum Settling Time Registered Data Inputs B tl05 ± 1/2 LSB Differential Linearity Error ± 1 LSB Integral Linearity Error
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Btl04/105
12-bit
24-pin
Btl05
Btl04KC,
Btl05KC
Btl04LC,
Btl05LC
erie feedthrough capacitors
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LM 7892
Abstract: No abstract text available
Text: ,:3j I I I I I C Preliminary Ê K Ë i 11 R S E T M I C R O L N D Y U C S T O T R CAT1 0 4 /CAT1 0 5 12-Bit Monolithic CMOS D/A Converter FEATURES • 40ns Max Settling Time ■ 5ppm/°C Internal Reference ■ Non-Reg istered Data Inputs CAT104 ■ TTL Compatible Inputs
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12-Bit
CAT104)
CAT105)
24-pin
300mW
Bti04/105
LM 7892
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Transistor Equivalent list
Abstract: Transistor AND DIODE Equivalent list capacitor feed-through
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very
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OT439A
LXE16350X
RA439
Transistor Equivalent list
Transistor AND DIODE Equivalent list
capacitor feed-through
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Transistor Equivalent list
Abstract: diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 erie feedthrough capacitors BDT85 IN4148 LXE16350X
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R • Interdigitated structure provides high emitter efficiency
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LXE16350X
MBC423
OT439A.
Transistor Equivalent list
diode IN4148
Transistor AND DIODE Equivalent list
copper permittivity
TRIMMER capacitor
by239-800
erie feedthrough capacitors
BDT85
IN4148
LXE16350X
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diode IN4148
Abstract: Transistor Equivalent list BDT85 IN4148 LXE18300X SC15 1250-003 BY239-800 Transistor AND DIODE Equivalent list
Text: # I » IK DISCRETE SEMICONDUCTORS SG41EET L X E 1 83 00 X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, S C 1 5 January 1992 Philips Semiconductors PHILIPS • b b S B ^ l D03SÜ73 ‘•T‘1 ■
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LXE18300X
00350fll
diode IN4148
Transistor Equivalent list
BDT85
IN4148
LXE18300X
SC15
1250-003
BY239-800
Transistor AND DIODE Equivalent list
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s3331
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS LXEE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 January 1992 Philips Semiconductors o PHILIPS bt,S3331 0035073 MTS Prelim inary specification PhiMps Semiconductors
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LXEE18300X
S3331
LXE18300X
350fll
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erie feedthrough capacitors
Abstract: RPE110Z5U103M50
Text: Advance Information This document contains information on a product under development. The parametric information contains target parameters and is subject to change. Distinguishing Features Applications • • • • • • • • • • • • •
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RS-343A
44-pin
Bt473
Btl21
BU21KPJ80
BU21KPJ50
erie feedthrough capacitors
RPE110Z5U103M50
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vk-200 ferrite choke
Abstract: X0187
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics —
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16-Volt
MRF641
MRF641
vk-200 ferrite choke
X0187
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vk-200 ferrite choke
Abstract: MRF641 transistor z4 n Allen-Bradley schematic transistor z5
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics —
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16-Volt
MRF641
vk-200 ferrite choke
transistor z4 n
Allen-Bradley schematic
transistor z5
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ran sistor . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics —
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16-Volt
MRF641
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mcd395
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OT437A
PLB16030U
AT-3-7281SL
mcd395
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erie capacitor
Abstract: PTB23002U SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer
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PTB23002U
OT440A
OT44QA.
erie capacitor
PTB23002U
SC15
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epsilam 10
Abstract: sot446 CMA110 SC1S
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very
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OT446A
LWE2010S
LWE201
epsilam 10
sot446
CMA110
SC1S
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EUROFARAD capacitor
Abstract: erie 1250-003 EUROFARAD cec EUROFARAD ceramic capacitor
Text: Philips Semiconductors Product specification NPN microwave power transistor MTB10010U FEATURES QUICK REFERENCE DATA • Input prematching cell allows an easier design of circuits Microwave performance for Tmb = 25 °C in a common base class C narrowband amplifier.
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MTB10010U
EUROFARAD capacitor
erie 1250-003
EUROFARAD cec
EUROFARAD ceramic capacitor
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NF4-5V
Abstract: capacitor feed-through ERIE ceramic capacitor
Text: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCEDATA . input matching cell allows an easier design of circuits Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.
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OT437A
AT-3-7-271SL
PLB16012U
NF4-5V
capacitor feed-through
ERIE ceramic capacitor
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erie feedthrough capacitors
Abstract: PLB16012U SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCE DATA • Input matching cell allows an easier design of circuits Microwave performance up to T mb = 25 °C in a common base class C • Diffused emitter ballasting resistors
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PLB16012U
OT437A
OT437A.
erie feedthrough capacitors
PLB16012U
SC15
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GL033
Abstract: capacitor feed-through
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cells allow an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OT439A
PXB16050U
AT-3-7271SL
GL033
capacitor feed-through
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EUROFARAD capacitor
Abstract: EUROFARAD cec EUROFARAD MTB10010U SC15 Pulse Capacitor Eurofarad
Text: Philips Semiconductors Product specification NPN microwave power transistor MTB10010U FEATURES QUICK REFERENCE DATA • Input prematching cell allows an easier design of circuits Microwave performance for Tmb = 25 °C in a common base class C narrowband amplifier.
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MTB10010U
OT440A
MTB1001
OT440A.
EUROFARAD capacitor
EUROFARAD cec
EUROFARAD
MTB10010U
SC15
Pulse Capacitor Eurofarad
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