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    EQUIVALENT ZX5T Search Results

    EQUIVALENT ZX5T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT ZX5T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    X5T851

    Abstract: ZX5T851A ZX5T851ASTOA ZX5T851ASTZ
    Text: ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T851A ZX5T851ASTOA ZX5T851ASTZ X5T851 ZX5T851A ZX5T851ASTOA ZX5T851ASTZ

    SOT89 transistor marking 5A

    Abstract: ZX5T951Z ZX5T951ZTA 5A SOT89
    Text: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		PDF ZX5T951Z SOT89 transistor marking 5A ZX5T951Z ZX5T951ZTA 5A SOT89

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE ALTERNATIVE IS ZXTN2005G ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZXTN2005G ZX5T869G OT223 OT223 ZX5T869GTA

    ZX5T849Z

    Abstract: ZX5T849ZTA MARKING 7A SOT89
    Text: ZX5T849Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T849Z ZX5T849ZTA ZX5T849Z ZX5T849ZTA MARKING 7A SOT89

    sot223 device Marking

    Abstract: npn 20A ZX5T869G ZX5T869GTA ZX5T869GTC
    Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T869G OT223 OT223 Q26100 sot223 device Marking npn 20A ZX5T869G ZX5T869GTA ZX5T869GTC

    X5T951

    Abstract: ZX5T951G ZX5T951GTA ZX5T951GTC Bv 42 transistor ZX5T951GT
    Text: ZX5T951G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T951G OT223 OT223 X5T951 ZX5T951G ZX5T951GTA ZX5T951GTC Bv 42 transistor ZX5T951GT

    ZX5T869Z

    Abstract: ZX5T869ZTA
    Text: ZX5T869Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T869Z ORD26100 ZX5T869Z ZX5T869ZTA

    sot89 "NPN TRANSISTOR"

    Abstract: MARKING 7A SOT89 NY TRANSISTOR MAKING ZX5T869Z ZX5T869ZTA
    Text: ZX5T869Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 6.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T869Z sot89 "NPN TRANSISTOR" MARKING 7A SOT89 NY TRANSISTOR MAKING ZX5T869Z ZX5T869ZTA

    X5T849

    Abstract: ZX5T849G ZX5T849GTA ZX5T849GTC
    Text: ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T849G OT223 OT223 X5T849 ZX5T849G ZX5T849GTA ZX5T849GTC

    sot223 device Marking

    Abstract: transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC
    Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 27m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T869G OT223 OT223 sot223 device Marking transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC

    ZX5T851G

    Abstract: ZX5T851GTA ZX5T851GTC Bv 42 transistor
    Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T851G OT223 OT223 ZX5T851G ZX5T851GTA ZX5T851GTC Bv 42 transistor

    npn 120v 10a transistor

    Abstract: ZX5T851Z ZX5T851ZTA
    Text: ZX5T851Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T851Z npn 120v 10a transistor ZX5T851Z ZX5T851ZTA

    X5T851

    Abstract: bv 42 TRANSISTOR equivalent
    Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T851G OT223 OT223 522-ZX5T851GTA ZX5T851GTA X5T851 bv 42 TRANSISTOR equivalent

    MARKING 7A SOT89

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTN2007Z ZX5T849Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZXTN2007Z ZX5T849Z ZX5T849Z MARKING 7A SOT89

    53Z Zetex

    Abstract: "PNP Transistor"
    Text: ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits,


    Original     		PDF -60mV 12Road 53Z Zetex "PNP Transistor"

    Untitled

    Abstract: No abstract text available
    Text: ZX5T951G 60V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V PNP transistor offers extrem ely low on state losses m aking it ideal for use in


    Original     		PDF ZX5T951G OT223 OT223

    Untitled

    Abstract: No abstract text available
    Text: ZX5T851A 60V NPN LOW SATURATION M EDIUM POWER TRANSISTOR IN E-LINE SUM M ARY BV CEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC


    Original     		PDF ZX5T851A

    Untitled

    Abstract: No abstract text available
    Text: ZX5T851G 60V NPN M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extrem ely low on state losses m aking it ideal for use in


    Original     		PDF ZX5T851G OT223 OT223

    "PNP Transistor"

    Abstract: design ideas TS16949 ZX5T951Z ZX5T951ZTA
    Text: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		PDF ZX5T951Z "PNP Transistor" design ideas TS16949 ZX5T951Z ZX5T951ZTA

    X5T953

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -100V IC = -5A Continuous Collector Current Low Saturation Voltage -90mV max @-1A


    Original     		PDF ZX5T953G OT223 -100V -90mV AEC-Q101 OT223 J-STD-020 DS33425 X5T953

    Untitled

    Abstract: No abstract text available
    Text: ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 40V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits,


    Original     		PDF -60mV WIDTH161

    ZX5T1951

    Abstract: ZX5T1951G ZX5T
    Text: A Product Line of Diodes Incorporated Green ZX5T1951G 60V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -60V IC = -6A Continuous Collector Current Low Saturation Voltage -95mV max @ -1A


    Original     		PDF ZX5T1951G OT223 -95mV AEC-Q101 OT223 J-STD-020 DS35304 ZX5T1951 ZX5T1951G ZX5T

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -100V IC = -5A Continuous Collector Current Low Saturation Voltage -90mV max @-1A


    Original     		PDF ZX5T953G OT223 -100V -90mV AEC-Q101 J-STD-020 DS33425

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZX5T1951G 60V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -60V IC = -6A Continuous Collector Current Low Saturation Voltage -95mV max @ -1A


    Original     		PDF ZX5T1951G OT223 -95mV AEC-Q101 J-STD-020 DS35304