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    EQUIVALENT OF K30N60HS Search Results

    EQUIVALENT OF K30N60HS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT OF K30N60HS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K30N60HS

    Abstract: k30n60 K30N60HS IGBT IGBT K30N60HS equivalent of K30N60HS SKW30N60HS
    Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW30N60HS PG-TO-247-3-21 SKW30N60HS K30N60HS k30n60 K30N60HS IGBT IGBT K30N60HS equivalent of K30N60HS

    K30N60HS

    Abstract: equivalent of K30N60HS k30n60 K30N60HS IGBT SKW30N60HS
    Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW30N60HS PG-TO-247-3-21 SKW30N60HS K30N60HS equivalent of K30N60HS k30n60 K30N60HS IGBT

    K30N60HS

    Abstract: K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS SKW30N60HS
    Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW30N60HS PG-TO-247-3-1 Q67040sS4503 PG-TO-247-3-1 O-247AC) SKW30N60HS K30N60HS K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS

    k30N60hs

    Abstract: K30N60HS IGBT K30N60 SKW30N60HS equivalent of K30N60HS IGBT K30N60HS IGBT SKW30N60HS PG-TO-247-3 350nS K30N60-
    Text: SKW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW30N60HS PG-TO-247-3 K30N60HS k30N60hs K30N60HS IGBT K30N60 SKW30N60HS equivalent of K30N60HS IGBT K30N60HS IGBT SKW30N60HS PG-TO-247-3 350nS K30N60-