lN2222
Abstract: N2222A MPQ2221 lN2222A MPQ2222 CD79 PQ224 2N2218 2N2222 MPQ2221A
Text: MW2221 MPQ2222 Mn2221A Mn2222A QUAD DUAL-IN-LINE NPN SILICON ANNULAR GENERAL-PURPOSE TRANSISTORS . . . designed for general-purpose VHF amplifier applications. switching circuits and DC to Maximum Power Dissipation @ TA = 25°C PD = 1.25 Watts — MPQ2221, MPQ2222
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MW2221
MPQ2222
Mn2221A
Mn2222A
MPQ2221,
MPQ2221A,
MPQ2222A
2N2218
2N2222
lN2222
N2222A
MPQ2221
lN2222A
MPQ2222
CD79
PQ224
MPQ2221A
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KH 2222
Abstract: hp 2222 equivalent of 2222 NPN 2222 A BT2222 2222AM
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M B T2222LT1 M M BT2222ALT1* G eneral Purpose Transistors NPN Silicon colle3ctor 'M o to ro la P referred Device 1 BASE Jl§ 2 EMITTER MAXIMUM RATINGS Rating Symbol 2222 2222A Unit C o lle c to r-E m itte r Voltage VCEO
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OCR Scan
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T2222LT1
BT2222ALT1*
OT-23
O-236AB)
BT2222ALT1
KH 2222
hp 2222
equivalent of 2222 NPN
2222 A
BT2222
2222AM
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PDF
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TRANSISTOR ML6
Abstract: No abstract text available
Text: bb53T31 0031772 E7T * A P X Philips Semiconductors Product specification NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES AUER PHILIPS/DISCRETE h^Z T> PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures
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OCR Scan
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bb53T31
BFQ270
OT172A1
TRANSISTOR ML6
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PDF
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TRANSISTOR ML6
Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain
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BFQ270
OT172A1.
TRANSISTOR ML6
TRANSISTOR ML5
resistor MR25 philips
SFR16T
philips MR25
npn 2222 transistor
ZO 103 MA 75 533
resistor MR25
Miniature Ceramic Plate Capacitors 2222 philips
MR25 resistor
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PDF
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TRANSISTOR ML6
Abstract: TRANSISTOR ML5 resistor MR25 philips philips MR25 resistor MR25 plate capacitor BFQ270 Miniature Ceramic Plate Capacitor Philips 2222 344 capacitors resistor 240
Text: Philip^emiconductor^^ • bb53T31 GG3177E E7T ■ A P X ^Productspeclflcatlon NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES h^Z » AUER PHILIPS/DISCRETE PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures
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OCR Scan
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DD3177E
BFQ270
OT172A1
OT172A1.
TRANSISTOR ML6
TRANSISTOR ML5
resistor MR25 philips
philips MR25
resistor MR25
plate capacitor
BFQ270
Miniature Ceramic Plate Capacitor
Philips 2222 344 capacitors
resistor 240
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE blE D IAPX bbS3R31 002flflb2 7UH l BLU60/28 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile
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OCR Scan
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bbS3R31
002flflb2
BLU60/28
BLU60/28
OT119)
bbS3T31
nt44i
MCA440
MCA439
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PDF
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Untitled
Abstract: No abstract text available
Text: PHILIPS bSE INTERNATIONAL T> 7110fl2b □Db27S'ì 12S m BLU60/28 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile
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OCR Scan
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BLU60/28
BLU60/28
OT119)
55rth
711002b
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PDF
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BLU60/28
Abstract: No abstract text available
Text: L.5E D PHILIPS INTERNATIONAL • 711002b OObSTST 125 l B LU 6 0 /2 8 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile
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OCR Scan
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711002b
BLU60/28
BLU60/28
OT119)
00bE7bS
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin
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BFG10W/X
OT343N
MBK523
R77/01/pp11
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PDF
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BC548 TRANSISTOR REPLACEMENT
Abstract: transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin
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BFG10W/X
OT343N
MBK523
R77/01/pp11
BC548 TRANSISTOR REPLACEMENT
transistor BC548
Philips Capacitor
RT5880
BC548
transistor bc548 bp
HE bc548
BC548 transistor
bc548 equivalent
MBG431
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PDF
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1128 marking
Abstract: MLP322 ZXTEM322 ZXTEM322TA ZXTEM322TC npn 2222
Text: ZXTEM322 MPPSTM Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR SUMMARY NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer
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ZXTEM322
MLP322
S26100
1128 marking
MLP322
ZXTEM322
ZXTEM322TA
ZXTEM322TC
npn 2222
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ISL71090SEH
Abstract: No abstract text available
Text: 4.096V Radiation Hardened Ultra Low Noise, Precision Voltage Reference ISL71091SEH40 Features The ISL71091SEH40 is an ultra low noise, high DC accuracy precision voltage reference with a wide input voltage range from 6.0V to 30V. It uses Intersil’s Advanced Bipolar
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ISL71091SEH40
ISL71091SEH40
038mm)
FN8634
ISL71090SEH
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PDF
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Untitled
Abstract: No abstract text available
Text: 2.048V Radiation Hardened Ultra Low Noise, Precision Voltage Reference ISL71091SEH20 Features The ISL71091SEH20 is an ultra low noise, high DC accuracy precision voltage reference with a wide input voltage range from 4.2V to 30V. It uses Intersil’s Advanced Bipolar
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ISL71091SEH20
ISL71091SEH20
038mm)
FN8632
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PDF
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTN620MA ZXTEM322 MPPSTM Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR SUMMARY NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual PNP transistors offer
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ZXTN620MA
ZXTEM322
MLP322
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: 10V Radiation Hardened Ultra Low Noise, Precision Voltage Reference ISL71091SEH10 Features The ISL71091SEH10 is an ultra low noise, high DC accuracy precision voltage reference with a wide input voltage range from 12V to 30V. It uses Intersil’s Advanced Bipolar technology
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ISL71091SEH10
ISL71091SEH10
038mm)
FN8633
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PDF
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Untitled
Abstract: No abstract text available
Text: 3.3V Radiation Hardened Ultra Low Noise, Precision Voltage Reference ISL71091SEH33 Features The ISL71091SEH33 is an ultra low noise, high DC accuracy precision voltage reference with a wide input voltage range from 4.6V to 30V. It uses Intersil’s Advanced Bipolar
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ISL71091SEH33
ISL71091SEH33
038mm)
FN8429
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ZXTN2010A
Abstract: ZXTN2010ASTOA ZXTN2010ASTZ
Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2010A
ZXTN2010ASTOA
ZXTN2010ASTZ
ZXTN2010A
ZXTN2010ASTOA
ZXTN2010ASTZ
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PDF
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IC2A
Abstract: marking N20 ZXTN2010A ZXTN2010ASTOA ZXTN2010ASTZ
Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2010A
ZXTN2010ASTOA
ZXTN2010ASTZ
IC2A
marking N20
ZXTN2010A
ZXTN2010ASTOA
ZXTN2010ASTZ
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PDF
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X5T851
Abstract: ZX5T851A ZX5T851ASTOA ZX5T851ASTZ
Text: ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC
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ZX5T851A
ZX5T851ASTOA
ZX5T851ASTZ
X5T851
ZX5T851A
ZX5T851ASTOA
ZX5T851ASTZ
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PDF
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Untitled
Abstract: No abstract text available
Text: ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2010A
ZXTN2010ASTOA
ZXTN2010AST)
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PDF
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ZXTN2007G
Abstract: ZXTN2007GTA ZXTN2007GTC zxtn
Text: ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2007G
OT223
OT223
ZXTN2007G
ZXTN2007GTA
ZXTN2007GTC
zxtn
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PDF
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ZXTN2010GTA
Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2010G
OT223
OT223
ZXTN2010GTA
ZXTN2010G
ZXTN2010GTC
Bv 42 transistor
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PDF
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transistor marking 6A
Abstract: ZXTN2010Z ZXTN2010ZTA
Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various
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ZXTN2010Z
transistor marking 6A
ZXTN2010Z
ZXTN2010ZTA
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PDF
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ZXTN2007Z
Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2007Z
ZXTN2007ZTA
TAP26100
ZXTN2007Z
ZXTN2007ZTA
ZXTN
MARKING 7A SOT89
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PDF
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