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    EQUIVALENT OF 1AM Search Results

    EQUIVALENT OF 1AM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT OF 1AM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LMBT3904LT1G

    Abstract: equivalent of 1AM 1am equivalent 1N916 1AM marking transistor sot-23 Marking 1am 1aM sot-23 transistor
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel


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    PDF LMBT3904LT1G 3000/Tape LMBT3904LT3G 10000/Tape OT-23 LMBT3904LT1G equivalent of 1AM 1am equivalent 1N916 1AM marking transistor sot-23 Marking 1am 1aM sot-23 transistor

    1AM marking transistor

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel


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    PDF LMBT3904LT1G 3000/Tape LMBT3904LT3G 10000/Tape OT-23 1AM marking transistor

    marking code SOD

    Abstract: schottky marking code A6
    Text: Z2PK106 1Amp Low VF Schottky Barrier Diode 60V - Z2PAK OUTLINE DIMENSIONS FEATURES Case : Z2PAK Halogen-free type Compliance to RoHS product Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability


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    PDF Z2PK106 50mVP-P marking code SOD schottky marking code A6

    Z1PK104

    Abstract: No abstract text available
    Text: Z1PK104 1Amp Low VF Schottky Barrier Diode 40V - Z1PAK OUTLINE DIMENSIONS FEATURES * Halogen-free type Unit : mm Case : Z1PAK * Compliance to RoHS product 0.05 Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF


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    PDF Z1PK104 OD-323 50mVP-P

    SOD123 A10

    Abstract: SOD-123 a10
    Text: Z2PK110 1Amp Low VF Schottky Barrier Diode 100V - Z2PAK OUTLINE DIMENSIONS FEATURES * * * * * * Halogen-free type Compliance to RoHS product Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability


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    PDF Z2PK110 50mVP-P SOD123 A10 SOD-123 a10

    z3pk1045

    Abstract: zpak
    Text: Z2PK115 1Amp Low VF Schottky Barrier Diode 150V - Z2PAK OUTLINE DIMENSIONS FEATURES Case : Z2PAK Halogen-free type Compliance to RoHS product Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability


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    PDF Z2PK115 50mVP-P z3pk1045 zpak

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel


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    PDF LMBT3904LT1G 3000/Tape LMBT3904LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x


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    PDF TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x TL07x

    TLE2071CP

    Abstract: No abstract text available
    Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x


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    PDF TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x TLE2071CP

    Untitled

    Abstract: No abstract text available
    Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x


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    PDF TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x TL07x

    Untitled

    Abstract: No abstract text available
    Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x


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    PDF TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x

    tle20741

    Abstract: TLE2071 TLE2071ACD TLE2071AID TLE2071AMFK TLE2071AMJG TLE2071CD TLE2071ID TLE2071MFK TLE2426
    Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x


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    PDF TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x TL07x tle20741 TLE2071 TLE2071ACD TLE2071AID TLE2071AMFK TLE2071AMJG TLE2071CD TLE2071ID TLE2071MFK TLE2426

    Untitled

    Abstract: No abstract text available
    Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x


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    PDF TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x TL07x

    Untitled

    Abstract: No abstract text available
    Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x


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    PDF TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x

    TLE20741

    Abstract: No abstract text available
    Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x


    Original
    PDF TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x TLE20741

    Untitled

    Abstract: No abstract text available
    Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x


    Original
    PDF TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x

    Untitled

    Abstract: No abstract text available
    Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x


    Original
    PDF TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x

    Untitled

    Abstract: No abstract text available
    Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x


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    PDF TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x

    transistor marking 1am

    Abstract: No abstract text available
    Text: TO SH IB A RN1412,RN1413 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN 1Am 17 1 3v r m g uRm N u -m 1u A•■ u m u 'm m Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. + 0.5 3.5-as ■ I 0.ÍÍ5


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    PDF RN1412 RN1413 RN2412, RN2413 RN1412 transistor marking 1am

    dp07dp

    Abstract: LT100 1AM Y
    Text: u im TECHNOLOGY _LTlO O l Precision O peration al Am plifier D C S C R IP TIO n FCRTURCS • Guaranteed L o w Offset Voltage T h e L T 1 0 0 1 significantly a d v a n c e s the s ta te -o f-th e - LT10 0 1AM 1 5|iV m ax LT1001C 60|iV m ax


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    PDF LT1001C 152mm) dp07dp LT100 1AM Y

    GREENCONN

    Abstract: GSEB263-30 EIA-364-13B SCSI-68 EIA-364-D 364D EIA-364-31 GSEB263 GSEB263-A02 31pin D connector
    Text: REV. 02 LOCAS. DESCRIPTION & £ m # t B & 3 -p DATE i n « DRAWN 2 0 0 8 .8 .1 8 tf Specifications C urrent Rating: 1Amp Insulation Resistance: 1000M Min. D ielectric W ithstanding: 300VV\AC C o n ta ct Resistance: 20 m Max. O perating Temperature:-4CV\C to + 1 0 5 ‘ C


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    PDF 1000M 300VV\AC 31-PIN GSEB263 GREENCONN GSEB263-30 EIA-364-13B SCSI-68 EIA-364-D 364D EIA-364-31 GSEB263 GSEB263-A02 31pin D connector

    DIGITAL GATE EMULATOR USING 8085

    Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
    Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S


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    PDF AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent

    ul 94 v2

    Abstract: No abstract text available
    Text: TH I S DRAW I NG IS UNPUBLI S HE D. C O P Y RI G HT 20 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION R 1G H T S 20 LOC RE V I S I ONS D I ST RESERVED. LTR DESCR I PTION E C R - 0 9 - 0 I I 60 I AU 3.25 . 1 OF A 24.26 c /2\ 0.76 •^3- /3\


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    PDF 09MAY2002 09MAY2002 ul 94 v2

    HSMS-0002

    Abstract: HSMS-0003 5082-0024 5082-0087 5082-2713 5082-0097
    Text: HÉULETT-PACKARDn C MP N T S HEWLETT PACKARD 5 OE D 4H475A4 SCHOTTKY BARRIER CHIPS FOR HYBRID INTEGRATED CIRCUITS OOOSSTf l 5082-0009 5082-0013 5082-0023 5082-0024 5082-0029 5082-0041 5082-0087 5082-0097 S 5082-9891 HS MS-0001 HSMS-0011 HSMS-0002 HSMS-0012


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    PDF 4H475A4 MS-0001 HSMS-0011 HSMS-0002 HSMS-0012 HSMS-0003 HSMS-0013 HSMS-00XX approximately280 5082-0024 5082-0087 5082-2713 5082-0097