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    EQUIVALENT FOR 1N5819 Search Results

    EQUIVALENT FOR 1N5819 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT FOR 1N5819 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    1N5819 SOD-123

    Abstract: smd package 1N5819 1n5817 SOD-123 sod87 package 1N5819 smd diode SOD 87 Package 1N5819 SOD123 1N5818 smd 1n5819 smd 1N5819 SMA
    Text: New Product Announcement April 2001 Compact, High-efficiency SOD-123: 1N5819HW! Uses 35-40% Less Board Space Than Other 1 Amp SMD’s E D SOD-123 A B G H C J Dim Min Max A 3.55 3.85 B 2.55 2.85 C 1.40 1.70 D  1.35 E 0.55 Typical G 0.25  H 0.15 Typical


    Original     		PDF OD-123: 1N5819HW! OD-123 OD-123 400mV 1N5819HW OD-87 PRLL58xx) 1N5819 SOD-123 smd package 1N5819 1n5817 SOD-123 sod87 package 1N5819 smd diode SOD 87 Package 1N5819 SOD123 1N5818 smd 1n5819 smd 1N5819 SMA

    Untitled

    Abstract: No abstract text available
    Text: 1N5819-1 and 1N5819UR-1 Standard HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 193, REV. C.2 AVAILABLE AS 1N5819-1, 1N5819UR-1 JAN EQUIVALENT: SJ5819-1/SJ5819UR-1* SV5819-1/SV5819UR-1* SX5819-1/SX5819UR-1*


    Original     		PDF 1N5819-1 1N5819UR-1 1N5819-1, SJ5819-1/SJ5819UR-1* SV5819-1/SV5819UR-1* SX5819-1/SX5819UR-1* SS5819-1/SS5819UR-1*

    1n5819 equivalent

    Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 BRD8011/D. DO-41 1n5819 equivalent 1N5817-19 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG

    1n5819 equivalent

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817 1N5818 1n5819 equivalent

    1n5819 equivalent

    Abstract: 1n5819
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817 1N5818 1n5819 equivalent

    1N5817

    Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 r14525 1N5817/D 1N5817RL 1N5818 1N5818RL 1N5819RL

    datasheets diode 1n5818

    Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 r14525 1N5817/D datasheets diode 1n5818 1N5817RL 1N5818 1N5818RL 1N5819RL 1N5817-19

    1N5817

    Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D 1N5817RL 1N5818 1N5818RL 1N5819RL

    FULL WAVE RECTIFIER CIRCUITS

    Abstract: 1N5818 1N5817 1N5819
    Text: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,


    Original     		PDF 1N5817/D 1N5817 1N5818 1N5819 1N5817 1N5819 FULL WAVE RECTIFIER CIRCUITS 1N5818

    1N5817

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D

    "Power Diode"

    Abstract: 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5819 1N5817 1N5817G
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D "Power Diode" 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5817G

    Untitled

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D

    Untitled

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D

    MBR130P

    Abstract: MBR120P
    Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-toconsr"jction with oxide passivation and metal overlap contact.


    Original     		PDF 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P 1N5817/MBR11EP/MBR120P 1N5818/MBR130P 1N5819/MBR140F MBR130P MBR120P

    1N6761-1

    Abstract: MICROSEMI 1N6761-1 1N5818-1
    Text: 1N5818-1, 1N5819-1, 1N6759-1 – 1N6761-1 and DSB1A20 – DSB1A100 Available on commercial versions 1 Amp Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/586 Qualified Levels*: JAN, JANTX, JANTXV and JANS DESCRIPTION This 1 Amp Schottky barrier rectifier is metallurgically bonded and offers military grade


    Original     		PDF 1N5818-1, 1N5819-1, 1N6759-1 1N6761-1 DSB1A20 DSB1A100 MIL-PRF-19500/586 1N5819-1 1N6761-1 DO-41 MICROSEMI 1N6761-1 1N5818-1

    1N5819UR1 JANTX

    Abstract: 1N5818-1 1N6761UR-1 MICROSEMI 1N6761-1 1N6761-1
    Text: 1N5818UR-1, 1N5819UR-1, 1N6761UR-1 and CDLL variants Available on commercial versions Qualified Levels*: JAN, JANTX, JANTXV and JANS 1 Amp Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/586 DESCRIPTION This 1 Amp schottky barrier rectifier is metallurgically bonded and offers military grade


    Original     		PDF 1N5818UR-1, 1N5819UR-1, 1N6761UR-1 MIL-PRF-19500/586 1N5819UR-1 1N6761UR-1 DO-213AB DO-213AB 1N5818, 1N5819 1N5819UR1 JANTX 1N5818-1 MICROSEMI 1N6761-1 1N6761-1

    CTX12S

    Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40


    Original     		PDF SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 16CTQ100S CTX12S CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S

    P2353AA

    Abstract: p2353ab MSAN-180 varistor VTR 150 20k tip 410 transistor varistor 10K 680 2N2222 tip 2N2907 audio transformer 200k to 1k LM393
    Text: Application Note MSAN-180 Applications of the MT91610AQ Programmable Ringing SLIC AN5371 ISSUE 2 July 2001 Contents 1.0 1.0 Introduction The MT91610 is a flexible SLIC designed for use in multiple applications and countries. The Zarlink MT91610, with an external bipolar driver, provides


    Original     		PDF MSAN-180 MT91610AQ AN5371 MT91610 MT91610, P2353AA p2353ab MSAN-180 varistor VTR 150 20k tip 410 transistor varistor 10K 680 2N2222 tip 2N2907 audio transformer 200k to 1k LM393

    varistor 10K 680

    Abstract: P2353AA
    Text: Application Note MSAN-180 Applications of the MT91610AQ Programmable Ringing SLIC AN5371 ISSUE 2 July 2001 Contents 1.0 1.0 Introduction The MT91610 is a flexible SLIC designed for use in multiple applications and countries. The Zarlink MT91610, with an external bipolar driver, provides


    Original     		PDF MSAN-180 MT91610AQ AN5371 MT91610 MT91610, varistor 10K 680 P2353AA

    MSAN-180

    Abstract: 1N5819 5KE220C MT91610 MT91610AQ Philips Varistor
    Text: MT91610 Programmable Ringing SLIC Preliminary Information Features • • • • • • • • • • • • • • • DS5181 Transformerless 2W to 4W conversion Controls battery feed to line Programmable line impedance Programmable network balance impedance


    Original     		PDF MT91610 DS5181 MT91610AQ MSAN-180 1N5819 5KE220C MT91610 MT91610AQ Philips Varistor

    Untitled

    Abstract: No abstract text available
    Text: MT91610 Programmable Ringing SLIC Preliminary Information Features • • • • • • • • • • • • • • • DS5181 Transformerless 2W to 4W conversion Controls battery feed to line Programmable line impedance Programmable network balance impedance


    Original     		PDF MT91610 DS5181

    MSAN-180

    Abstract: varistor 20k 1N5819 5KE220C MT91610 MT91610AQ varistor VTR 150 20k transistor equivalent of tip 50 BAW101
    Text: MT91610 Programmable Ringing SLIC Preliminary Information Features • • • • • • • • • • • • • • • DS5181 Transformerless 2W to 4W conversion Controls battery feed to line Programmable line impedance Programmable network balance impedance


    Original     		PDF MT91610 DS5181 MT91610AQ MSAN-180 varistor 20k 1N5819 5KE220C MT91610 MT91610AQ varistor VTR 150 20k transistor equivalent of tip 50 BAW101

    smd package 1N5819

    Abstract: 1N5819 smd diode 1N5817 smd 1n5819 smd 1N5817 smd diode 1n5819 equivalent 1N5818 smd BKC Semiconductors DO-213AB GLASS Schottky
    Text: 1N5817 thru 1N5819 DO-41 Glass 1 Amp Use Advantages Schottky Rectifier Low forward voltage drop. Fast switching due to majority carrier conduction which results in high operating efficiencies because of Ipw power loss. Used in low voltage power supplies, high frequency inverters and converters,


    OCR Scan     		PDF DO-41 1N5817 1N5819 1N5819 MIL-S-19500/586 100mA 1N5818 smd package 1N5819 1N5819 smd diode 1N5817 smd 1n5819 smd 1N5817 smd diode 1n5819 equivalent 1N5818 smd BKC Semiconductors DO-213AB GLASS Schottky