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    EQUIVALENT 02N Search Results

    EQUIVALENT 02N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT 02N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTD24P20

    Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
    Text: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M


    Original     		PDF 02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10

    LEMO 3-Pin

    Abstract: 1m trimpot LEMO ionisation DZ01-0201-22 transimpedance photomultiplier
    Text: Datasheet HCA-1M-1M-C High Speed Current Amplifier Features Bandwidth and Frequency Response Independent of Detector Capacitance up to 2 nF Low Noise 3.5 pA/√ √Hz Equivalent Input Noise Current Bandwidth DC . 1 MHz 6 Transimpedance (Gain) 1 x 10 V/A


    Original     		PDF

    toshiba nand tc58

    Abstract: toshiba Nand flash toshiba Nand part numbering tc58 flash samsung tc58 Toshiba NAND TOSHIBA TC58 cmos memory -NAND NAND256-A TOSHIBA part numbering VFBGA63
    Text: AN1839 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics Small Page 528 Byte/ 264 Word Page NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a


    Original     		PDF AN1839 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits toshiba nand tc58 toshiba Nand flash toshiba Nand part numbering tc58 flash samsung tc58 Toshiba NAND TOSHIBA TC58 cmos memory -NAND NAND256-A TOSHIBA part numbering VFBGA63

    full adder circuit using nor gates

    Abstract: D-latch DIL40 DIL48 half adder ttl half adder circuit using nor and nand gates microprocessor radiation hard datasheet SRDL DIL14 DIL16
    Text: MA9000 Series MAY 1995 DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal CMOS/SOS gate arrays is a four transistor ‘cell-unit’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the


    Original     		PDF MA9000 DS3598-3 full adder circuit using nor gates D-latch DIL40 DIL48 half adder ttl half adder circuit using nor and nand gates microprocessor radiation hard datasheet SRDL DIL14 DIL16

    Untitled

    Abstract: No abstract text available
    Text: AZ1013-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features line, protecting any downstream components. AZ1013-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 ± 15kV air, ±8kV contact discharge .


    Original     		PDF AZ1013-02N AZ1013-02N 5/50ns) 107XY 116XY

    Untitled

    Abstract: No abstract text available
    Text: AZ1015-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features immunity requirements of IEC 61000-4-2, Level 4 ± 15kV air, ±8kV contact discharge . ESD Protect for 2 high-speed I/O channels z Provide ESD protection for each channel to


    Original     		PDF AZ1015-02N 5/50ns) 102XY.

    amazing

    Abstract: DIODE T25 4 AZC002-02N 1394 6 pin firewire to USB Connection Diagram Diode Equivalent t25 4 6 pin Package 02n 1394 firewire to USB Connection Diagram 1394 firewire 6 pin to USB marking 5a sot143 sot143 usb tvs
    Text: AZC002-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features ESD Protect for 2 high-speed I/O channels z Provide ESD protection for each channel to z AZC002-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4


    Original     		PDF AZC002-02N AZC002-02N 5/50ns) 8/20s) C04XY C06XY amazing DIODE T25 4 1394 6 pin firewire to USB Connection Diagram Diode Equivalent t25 4 6 pin Package 02n 1394 firewire to USB Connection Diagram 1394 firewire 6 pin to USB marking 5a sot143 sot143 usb tvs

    Untitled

    Abstract: No abstract text available
    Text: AZC015-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features AZC015-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 ± 15kV air, ±8kV contact discharge . ESD Protect for 2 high-speed I/O channels


    Original     		PDF AZC015-02N AZC015-02N 5/50ns) C03XY C03XY.

    HIGH VOLTAGE DIODE 6kv

    Abstract: sot143 TOP marking 16 tvs diode marking code fo Firewire ESD SSEPAA5-02N MARKING 02n SOT143-4L
    Text: SSEPAA5-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features z z ESD Protect for 2 high-speed I/O channels Provide ESD protection for each channel to immunity requirements of IEC 61000-4-2, Level 4 ± 15kV air, ±8kV contact discharge .


    Original     		PDF SSEPAA5-02N 5/50ns) 8/20s) HIGH VOLTAGE DIODE 6kv sot143 TOP marking 16 tvs diode marking code fo Firewire ESD SSEPAA5-02N MARKING 02n SOT143-4L

    AZ1015-02N

    Abstract: EQUIVALENT 02n
    Text: AZ1015-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features immunity requirements of IEC 61000-4-2, Level 4 ± 15kV air, ±8kV contact discharge . ESD Protect for 2 high-speed I/O channels z Provide ESD protection for each channel to


    Original     		PDF AZ1015-02N 5/50ns) 102XY. AZ1015-02N EQUIVALENT 02n

    Untitled

    Abstract: No abstract text available
    Text: AZC002-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features AZC002-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 ± 15kV air, ±8kV contact discharge . ESD Protect for 2 high-speed I/O channels


    Original     		PDF AZC002-02N AZC002-02N 5/50ns) C04XY C04XY.

    Untitled

    Abstract: No abstract text available
    Text: AZC015-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features AZC015-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 ± 15kV air, ±8kV contact discharge . ESD Protect for 2 high-speed I/O channels


    Original     		PDF AZC015-02N AZC015-02N 5/50ns) C03XY.

    c09x

    Abstract: AZC015-02N SOT143-4L DIODE T25 4
    Text: AZC015-02N Low Capacitance ESD Protection Array For High Speed Data Interfaces Features ESD Protect for 2 high-speed I/O channels z Provide ESD protection for each channel to z AZC015-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4


    Original     		PDF AZC015-02N AZC015-02N 5/50ns) 8/20s) techno09 C03XY. c09x SOT143-4L DIODE T25 4

    omnivision infrared

    Abstract: No abstract text available
    Text: Protection Device TVS Transient Voltage Suppressor ESD311-U1-02N Uni-directional, 15 V, 210 pF, 0603, RoHS and Halogen Free compliant ESD311-U1-02N Data Sheet Revision 1.0, 2014-05-28 Final Power Management & Multimarket Edition 2014-05-28 Published by Infineon Technologies AG


    Original     		PDF ESD311-U1-02N omnivision infrared

    2SB646(A) equivalent

    Abstract: SKIIP 12NAB126 V23990-K218-F40-PM 11AC126V1 80-M006PNB010SA01-K615D A/APM2055N equivalent 23NAB126V1
    Text: MiniSkiiP Power Modules for Standard Drives MiniSKiiP® Options MiniSKiiP® modules with thermal grease Option A or B Lids Two lidss are available for all MiniSKiiP® iiP® modules: • ■ Thin Lid Standard Lid L Standard dard 6.5 mm version allowing


    Original     		PDF

    2708-t

    Abstract: Hitachi DSA00281 TX26D14VM2EAA
    Text: KAOHSIUNG HITACHI ELECTRONICS CO., LTD. DATE: Aug. 02nd 2010 FOR MESSRS: CUSTOMER’S ACCEPTANCE SPECIFICATIONS TX26D14VM2EAA Contents No. ITEM SHEET No. PAGE 1 COVER 7B64PS 2701-TX26D14VM2EAA -1 1-1/1 2 RECORD OF REVISION 7B64PS 2702-TX26D14VM2EAA -1 2-1/1


    Original     		PDF TX26D14VM2EAA 7B64PS 2701-TX26D14VM2EAA 2702-TX26D14VM2EAA 2703-TX26D14VM2EAA 2704-TX26D14VM2EAA 2708-t Hitachi DSA00281 TX26D14VM2EAA

    mosfet equivalent

    Abstract: mosfet base inverter with chargers circuit SKiiP 83 AC 12 i t 46 fy074pa SKIIP 33 UPS 06 V23990-P769-A-PM 25AC12T4v semikron skiip 83 SKiiP 31 AC 12 T2
    Text: POWER MODULES 2015 � 16 Vincotech About us About Vincotech EMPOWERING YOUR IDEAS. Vincotech, an independent company within the Mitsubishi Electric Corporation, is a market leader and reliable partner in power modules. The enterprise develops and manufactures high-quality electronic power


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal C M O S /S O S ga te arrays is a fo u r tra n s is to r ‘c e ll-u n it’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the


    OCR Scan     		PDF DS3598-3 MA9000 D0242bl 3Sx24nnnxxxxx 37bflS22 00242b2

    Untitled

    Abstract: No abstract text available
    Text: 1.5-*0.5'-2 PLCS 36.525*0.025 DIA MUST BE SMOOTH FOR O-RING SEAL 8.00 MIN. 21.75*0.25 1.50 R. TYP. DATE SYM 150C87 B REVISION RECORD AUTHORITY REVISED LOCK ARMS AND PINS 4 PLCS. 23MY8E DR CK LT REVISED LOCK ARMS AND CASE DIMENSIONS. 23 JN8S D 02NO86 ADD OVERALL DIMENSIONS.


    OCR Scan     		PDF 150C87 23MY8E PE00S616 02NO86 07AP89 PE00S8S1 26SE8C 8S0005 12S73< 1326063AFBAR

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. SYM DATE 02NO85 B 11MR86 DO NOT S C A L E 20JA06 B1 AUTHORITY DR CK


    OCR Scan     		PDF 1047S2 20JA06 11MR86 02NO85 12064SS8 TE12DE85 TE16DE85

    IR3G01

    Abstract: high speed comparator
    Text: High Speed Comparator IR3G 01/IR3G 01N/IR 3G 02/IR3G 02N IR3G01/IR3G01N/IR3G02/IR3G02N High Speed Comparator • Description ■ The IR3G01/IR3G01N/IR3G02/IR3G02N is a high speed comparator IC which uses the conventional Schottky diode technology. It’s outputs are compati­


    OCR Scan     		PDF 01/IR3G 01N/IR 02/IR3G IR3G01/IR3G01N/IR3G02/IR3G02N IR3G01/IR3G01N/IR3G02/IR3G02N 02/IR IR3G01/IR3G01N. IR3G01 IR3G02 14-pin high speed comparator

    7404* 15v

    Abstract: 7470N 7400N 74107N 7401N 7402N 7403AN 7403N SA 7493N 7405AN
    Text: INTEGRATED CIRCUITS LIST OF COMPARABLE TYPES T T L RANGE COMMERCIAL VERSIONS Type No. 7400N 74 01N 7401 AN 74 02N 74 03N 7403AN 7404N 7405N 7405AN 741 ON 7420N 7430N 7440N 7441 AN 7 4 42N 7450N 7451N 7453N Mullard types FJH131 FJH231 FJH311 FJH221 FJH291 FJH301


    OCR Scan     		PDF 7400N 7401N 7402N 7403N 7403AN 7404N 7405N 7405AN 7420N 7430N 7404* 15v 7470N 74107N SA 7493N

    J111A

    Abstract: 7400N 7480N 7472N 7401N 7402N 7403AN 7403N 7404N 7405AN
    Text: INTEGRATED CIRCUITS LIST OF COMPARABLE TYPES T T L RANGE COMMERCIAL VERSIONS Type No. 7400N 74 01N 7401 AN 74 02N 74 03N 7403AN 7404N 7405N 7405AN 741 ON 7420N 7430N 7440N 7441 AN 7 4 42N 7450N 7451N 7453N Mullard types FJH131 FJH231 FJH311 FJH221 FJH291 FJH301


    OCR Scan     		PDF 7400N 7401N 7402N 7403N 7403AN 7404N 7405N 7405AN 7420N 7430N J111A 7480N 7472N

    6473N

    Abstract: 7405N tir 101a 7400N 7401N 7402N 7403AN 7403N 7404N 7405AN
    Text: INTEGRATED CIRCUITS LIST OF COMPARABLE TYPES T T L RANGE C O M M E R C IA L V E R S IO N S Type No. 7400N 74 01N 7401 AN 74 02N 74 03N 7403AN 7404N 7405N 7405AN 741 ON 7420N 7430N 7440N 7441 AN 7 4 42N 7450N 7451N 7453N Mullard types FJH131 FJH231 FJH311 FJH221


    OCR Scan     		PDF 7400N 7401N 7402N 7403N 7403AN 7404N 7405N 7405AN 7420N 7430N 6473N tir 101a