Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1C6622 TECHNICAL DATA DATASHEET 345, REV B SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Glass passivated Epitaxial Diode with Mesa Structure
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1C6622
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Untitled
Abstract: No abstract text available
Text: MRS1504T3 Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
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MRS1504T3
MRS1504T3
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MARKING rgg smb
Abstract: No abstract text available
Text: MRS1504T3 Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
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MRS1504T3
MRS1504T3/D
MARKING rgg smb
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micrometrics vco
Abstract: MHV502
Text: Microwave Hyperabrupt Tuning Varactors Description The MicroMetrics MHV 500 series Microwave Hyperabrupt Tuning Varactors are silicon epitaxial mesa devices with high reliability glass passivation which ensures optimum VCO settling time and flat post tuning
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chara2400
MHV500
MHV501
MHV502
MHV503
MHV504
MHV505
MHV506
MHV507
MHV508
micrometrics vco
MHV502
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MRS1504T3
Abstract: MRS1504T3G
Text: MRS1504T3 Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
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MRS1504T3
MRS1504T3/D
MRS1504T3
MRS1504T3G
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MRS1504T3
Abstract: No abstract text available
Text: MRS1504T3 Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
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MRS1504T3
r14525
MRS1504T3/D
MRS1504T3
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MicroMetrics MHV 500 series
Abstract: MHV500 MHV513 MHV512 MHV503 MHV502 MHV501 MHV504 MHV507 "Tuning Varactors"
Text: Microwave Hyperabrupt Tuning Varactors Description The MicroMetrics MHV 500 series Microwave Hyperabrupt Tuning Varactors are silicon epitaxial mesa devices with high reliability glass passivation which ensures optimum VCO settling time and flat post tuning
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charact00
MHV500
MHV501
MHV502
MHV503
MHV504
MHV505
MHV506
MHV507
MHV508
MicroMetrics MHV 500 series
MHV500
MHV513
MHV512
MHV503
MHV502
MHV501
MHV504
MHV507
"Tuning Varactors"
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Untitled
Abstract: No abstract text available
Text: MRS1504T3 Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
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MRS1504T3
MRS1504T3
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Untitled
Abstract: No abstract text available
Text: MRS1504T3G, NRVS1504T3G Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
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MRS1504T3G,
NRVS1504T3G
MRS1504T3/D
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NRVS1504
Abstract: MRS1504T3G
Text: MRS1504T3G, NRVS1504T3G Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
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MRS1504T3G,
NRVS1504T3G
AEC-Q101
MRS1504T3/D
NRVS1504
MRS1504T3G
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Untitled
Abstract: No abstract text available
Text: MRS1504T3G, NRVS1504T3G Surface Mount Standard Recovery Power Rectifier SMB Power Surface Mount Package Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
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MRS1504T3G,
NRVS1504T3G
AEC-Q101
MRS1504T3/D
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30a bipolar
Abstract: PVAPOX
Text: BIPOLAR TRANSISTORS Multi-epitaxial Mesa GLASS THERMAL OXIDE Al P-VAPOX N + P+ P N - N N+ Features Icm up to 30A Vceo up to 700V yvon1SEC3 More than 55 silicon lines Variety of package options
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QW-R203-019
Abstract: MJE13007
Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO
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MJE13007
O-220
QW-R203-019
100ms
MJE13007
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mje13003
Abstract: UTCMJE13003 transistor mje13003 MJE13003 transistor
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-126 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO
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MJE13003
O-126
QW-R204-004
mje13003
UTCMJE13003
transistor mje13003
MJE13003 transistor
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PT 10000
Abstract: No abstract text available
Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO
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MJE13005
O-220F
QW-R219-001
PT 10000
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Untitled
Abstract: No abstract text available
Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO
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MJE13005
O-220F
Co000
QW-R219-001
100ms
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Ultrafast RECTIFIER DIODES ON Semiconductor DATA
Abstract: 1N5817 2N2222 2N6277 MURP20040CT URP20040CT
Text: MOTOROLA Order this document by MURP20040CT/D SEMICONDUCTOR TECHNICAL DATA Data Sheet SWITCHMODE MURP20040CT Designer's Ultrafast Power Rectifier ULTRAFAST RECTIFIER 200 AMPERES POWERTAP II Package Features mesa epitaxial construction with glass passivation. Ideally suited
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MURP20040CT/D
MURP20040CT
MURP20040CT/D*
Ultrafast RECTIFIER DIODES ON Semiconductor DATA
1N5817
2N2222
2N6277
MURP20040CT
URP20040CT
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MJE13005
Abstract: mje-13005 QW-R203-018 PT 10000
Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO
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MJE13005
O-220
QW-R203-018
100ms
MJE13005
mje-13005
PT 10000
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RECTIFIER DIODES Motorola
Abstract: MRS1504T3
Text: MOTOROLA Order this document by MRS1504T3/D SEMICONDUCTOR TECHNICAL DATA Advance Information Surface Mount Standard Recovery Power Rectifier MRS1504T3 SMB Power Surface Mount Package STANDARD RECOVERY RECTIFIER 1.5 AMPERES 400 VOLTS Features mesa epitaxial construction with glass passivation.
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MRS1504T3/D
MRS1504T3
RECTIFIER DIODES Motorola
MRS1504T3
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Untitled
Abstract: No abstract text available
Text: EPITAXIAL BASE - lCM UP TO 30A; VCEO UP TO 100V MAIN FEATURES • NPN and PNP types perfect complementary pairs ■ Medium switching speed ■ Medium fy (2 to 20 MHz) ■ High ruggedness THERMAL OXIDE P VAPOX Al GIAS! INTERNAL SCHEMATIC DIAGRAMS Epitaxial Base Technology is a general purpose low
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GVD30422-001
Abstract: No abstract text available
Text: Preliminary Data - January 1999 GVD30400 SERIES SPRAGUE-GOODMAN ELECTRONICS, INC. W IDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • Mesa Epitaxial Silicon Construction > Silicon Dioxide Passivated • Superior Wide Range Linear Characteristics
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GVD30400
GVD30422-004
GVD30432-004
GVD30442-004
GVD30422-001
GVD30432-001
GVD30442-001
GVD30452-001
GVD30462-001
OT-23
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Untitled
Abstract: No abstract text available
Text: Preliminary Data - January 1999 GVD30600 SERIES SPRAGIH-GOODMAN ELECTRONICS, INC. W IDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS « Mesa Epitaxial Silicon Construction • Silicon Dioxide Passivated > Superior Wide Range Linear Characteristics
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GVD30600
GVD30601-004
GVD30602-004
GVD30603-004
GVD30601-001
GVD30602-001
GVD30603-001
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NTD408
Abstract: e100n HUMMER
Text: SEC SILICON DARLINGTON POWER TRANSISTOR NTD408 ELECTRON DEVICE LOW FREQUENCY AMPLIFIER AND LOW SPEED SW ITCHING NPN SILICON EPITAXIAL MESA DARLINGTON TRANSISTOR Industrial Use DESCRIPTIO N Suitable for hummer driver, pulse motor driver and relay driver applications.
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NTD408
NTD408
e100n
HUMMER
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Untitled
Abstract: No abstract text available
Text: SILICON HYPERABRUPT JUNCTION TUNING VARACTOR This series of silicon m icrowave tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning up to Ku band.
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