transistor zo 607
Abstract: zo 607 MA zo 607 EC3H02C
Text: Ordering number : ENN6579 EC3H02C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low noise : NF=1.0dB typ f=1GHz . High gain :S21e2=12dB typ (f=1GHz).
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ENN6579
EC3H02C
S21e2
transistor zo 607
zo 607 MA
zo 607
EC3H02C
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transistor zo 607
Abstract: zo 607 MA zo 607 equivalent ZO 607 EC3H02C
Text: Ordering number : ENN6579 EC3H02C NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications [EC3H02C] 0.5 0.2 0.05 0.2 3 4 2 1 0.05 1 : Base 2 : Emitter 3 : Collector 4 : Collector 0.6 Bottom View 1.0 0.05 •
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ENN6579
EC3H02C
EC3H02C]
S21e2
E-CSP1008-4
transistor zo 607
zo 607 MA
zo 607
equivalent ZO 607
EC3H02C
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7m 0880 IC
Abstract: No abstract text available
Text: Ordering number : ENN6579 NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications Package Dimensions Features • Low noise : NF=1.0dB typ f= lG H z . unit : mm • High gain : |S 2 1 e I2=12dB typ (f= lG H z).
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OCR Scan
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PDF
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ENN6579
EC3H02C
EC3H02C]
E-CSP1008-4
7m 0880 IC
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