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    RG2006

    Abstract: RG2006n RG2006JN to220ml ENA1784 A1784
    Text: RG2006JN Ordering number : ENA1784 SANYO Semiconductors DATA SHEET RG2006JN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		RG2006JN ENA1784 PW100s, cycle50% A1784-3/3 RG2006 RG2006n RG2006JN to220ml ENA1784 A1784 PDF