fototransistor
Abstract: phototransistor peak 550 nm phototransistor 600 nm GEOY6840 OHM02257 OHF00601 lichtschranken-anwendungen 9260 transistor phototransistor 650 nm TP 9260
Text: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung
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GEOY6840
fototransistor
phototransistor peak 550 nm
phototransistor 600 nm
GEOY6840
OHM02257
OHF00601
lichtschranken-anwendungen
9260 transistor
phototransistor 650 nm
TP 9260
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phototransistor peak 550 nm
Abstract: Fototransistor phototransistor 550 nm phototransistor 650 nm IC 9260 GEO06840 OHM02257 OHF00601
Text: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung
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GEO06840
phototransistor peak 550 nm
Fototransistor
phototransistor 550 nm
phototransistor 650 nm
IC 9260
GEO06840
OHM02257
OHF00601
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fototransistor
Abstract: No abstract text available
Text: 2013-08-14 Infrared-Emitter 850 nm and Si-Phototransistor IR-Emitter (850 nm) und Si-Fototransistor Version 1.0 SFH 7250 Features: Besondere Merkmale: • Available on tape and reel • SMT package with IR emitter (850 nm) and Si-phototransistor • Suitable for SMT assembly
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D-93055
fototransistor
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RNI55W
Abstract: RNI30W
Text: Phototransistors 3mm Phototransistor RNI30W Water Clear Lens Absolution Maximun Rating Ta=25° Collector-to-Emitter breakdown voltage . 30V Emitter-to-Collector breakdown voltage . 5V
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RNI30W
100mW
940nm
100uA
RNI55W
RNI30W
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XRHF51BFR
Abstract: XRNI82B
Text: Phototransistor 2.5x5mm XRNI82B Phototransistor Blue Transparent Lens Absolute Maximum Rating TA =25°° C Collector-to-Emitter Breakdown Voltage . 30V Emitter-to-Collector Breakdown Voltage . 5V
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XRNI82B
100mW
100uA
940nm
08mW/cm
XRHF51BFR
XRNI82B
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Untitled
Abstract: No abstract text available
Text: Phototransistors 3mm Phototransistor XRNI30W Water Clear Lens Absolute Maximum Rating T A =25°° C Collector-to-Emitter Breakdown Voltage . 30V Emitter-to-Collector Breakdown Voltage . 5V
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XRNI30W
100mW
940nm
20mW/cm
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bar code reflective lens phototransistor
Abstract: DUAL EMITTER BAR CODE HEAD phototransistor with amplifier bar code lens phototransistor high resolution reflective lens phototransistor bar code phototransistor dual Phototransistor emitter phototransistor High Resolution Optical Reflective Sensor phototransistor visible light
Text: Single Emitter Bar Code Optic Head OTR480/490/482 FEATURES: • Single Emitter Bar Code / Fine Line Sensor • Better than 0.010” Resolution • Compact Size • Easily Ganged for Multiple Channels PRODUCT DESCRIPTION The OTR480/490/482 series combine a single emitter with a phototransistor in a compact low cost package containing a lens and
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OTR480/490/482
OTR480/490/482
OTR480
OTR490
OTR482
bar code reflective lens phototransistor
DUAL EMITTER BAR CODE HEAD
phototransistor with amplifier
bar code lens phototransistor
high resolution reflective lens phototransistor
bar code phototransistor
dual Phototransistor
emitter phototransistor
High Resolution Optical Reflective Sensor
phototransistor visible light
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phototransistor 800 nm
Abstract: datasheet phototransistor Phototransistor EPH-3260 500LUX
Text: ELEKON Phototransistor EPH-3260 High reliable, silicon planer type phototransistor for small precision equipment. Applications: All kinds of sensor Specifications & Ratings: Parameter @ 25ºC Symbol Collector Emitter Voltage Emitter Collector Voltage Collector Current
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EPH-3260
500Lux
100pe
phototransistor 800 nm
datasheet phototransistor
Phototransistor
EPH-3260
500LUX
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Untitled
Abstract: No abstract text available
Text: SMD Phototransistors 1.6mm x 0.8mm x 1.1mm XZRNI53W Phototransistor Water Clear Lens Absolute Maximum Rating T A =25°° C Collector-to-Emitter Breakdown Voltage . 30V Emitter-to-Collector Breakdown Voltage . 5V
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XZRNI53W
100mW
940nm
20mW/cm
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3271
Abstract: Phototransistor EPH-3270 EPH-3271
Text: ELEKON Phototransistor EPH-3270 High reliable, silicon planer type phototransistor for small precision equipment. Applications: All kinds of sensor Specifications & Ratings: Parameter @ 25ºC Symbol Collector Emitter Voltage Emitter Collector Voltage Collector Current Ratio
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EPH-3270
EPH-3270*
EPH-3271*
500Lux
3271
Phototransistor
EPH-3270
EPH-3271
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10KW
Abstract: OP505 OP705A OP705B OP705C OP705D
Text: Product Bulletin OP705 March 1999 NPN Phototransistor with Base-Emitter Resistor Types OP705A, OP705B, OP705C, OP705D Features Absolute Maximum Ratings TA = 25o C unless otherwise noted • • • • Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
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OP705
OP705A,
OP705B,
OP705C,
OP705D
10KW
OP505
OP705A
OP705B
OP705C
OP705D
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lens emitter phototransistor
Abstract: No abstract text available
Text: KOME PART NUMBER: PHOTOTRANSISTOR SPECIFICATION 3244 SC 3mm Phototransistor, Water Clear Lens Absolute Maximum Rating 25°Cunless otherwise notes Collector to Emitter Breakdown Voltage VBR CEO 30V Emitter to Collector Breakdown Voltage 5V Operating Temperature Range
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100mW
100ohms
100uA
940nm
lens emitter phototransistor
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Untitled
Abstract: No abstract text available
Text: Gabellichtschranke Slotted Interrupter SFH 9300 Wesentliche Merkmale Features • • • • • Compact type • GaAs infrared emitter 950 nm • Silicon phototransistor detector with daylight-cutoff filter • Easy identification of emitter (clear component
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Infrared Phototransistor
Abstract: QEE213 QSE243
Text: LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE243 PACKAGE DIMENSIONS 0.060 1.50 0.174 (4.44) R 0.030 (0.76) ;@;@ 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN SCHEMATIC Collector EMITTER 0.060 (1.52) Emitter 0.020 (0.51)
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QSE243
QSE243
DS300288
Infrared Phototransistor
QEE213
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QEE213
Abstract: QSE213 Infrared Phototransistor
Text: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 PACKAGE DIMENSIONS 0.060 1.50 0.174 (4.44) R 0.030 (0.76) ;@;@ 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN SCHEMATIC Collector EMITTER 0.060 (1.52) 0.020 (0.51) SQ. (2X) Emitter 0.100 (2.54)
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QSE213
QSE213
DS300022
QEE213
Infrared Phototransistor
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QEE213
Abstract: QSE243
Text: QSE243 Low Light Rejection Plastic Silicon Infrared PhotoTransistor Features Description • NPN Silicon Phototransistor with internal base-emitter resistance ■ Package Type: Sidelooker ■ Medium Reception Angle, 50° ■ Clear Plastic Package ■ Matching Emitter: QEE213
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QSE243
QEE213
QSE243
QEE213
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SFH614A
Abstract: No abstract text available
Text: SFH614A High Collector-Emitter Voltage Phototransistor Optocoupler FEATURES • High Isolation Test Voltage, 5300 VRMS • High Collector-Emitter Voltage, VCEO=300 V • Standard Plastic DIP-4 Package • Underwriters Lab File #E52744 Dimensions in inches mm
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SFH614A
E52744
SFH614A
1-888-Infineon
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IEC10
Abstract: SFH614A
Text: SFH614A High Collector-Emitter Voltage Phototransistor Optocoupler FEATURES • High Isolation Test Voltage, 5300 VRMS • High Collector-Emitter Voltage, VCEO=300 V • Standard Plastic DIP-4 Package • Underwriters Lab File #E52744 Dimensions in inches mm
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SFH614A
E52744
SFH614A
17-August-01
IEC10
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sfh9260
Abstract: No abstract text available
Text: SIEMENS SFH 9260 Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector Vorläufige Daten/Preliminary Data 1 Type SFH 9260 Anode 2 3 - 4 Emitter Collector 5 6 - O O
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Applic-16
SFH9260
sfh9260
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Untitled
Abstract: No abstract text available
Text: 000^313 W 7ÔEÔcm «RHM ABSOLUTE MAXIMUM RATINGS TA=25°C Infrared Emitter Forward Current Reverse Voltage Power Dissipation 50mA 5V 80m W Vc Phototransistor Collector-Emitter Voltage Emitter-Collector Voltage Collector Power Dissipation 30V 5V 80m W CEO
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RPI141
RPI-141
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TT 3034
Abstract: 1PM4 diode 1pm4
Text: T ñ E fl'm 000^311 norim 3bS • RHM OPTOELECTRONICS RPI-581 PHOTO INTERRUPTER ABSOLUTE MAXIMUM RATINGS T> =25°C Infrared Emitter Forward Current Reverse Voltage Power Dissipation 50 mA 5V 80mW ■f VR Pd Phototransistor Collector-Emitter Voltage Emitter-Collector Voltage
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RPI-581
RPI581
0DCH321
TT 3034
1PM4
diode 1pm4
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RPI-441
Abstract: RPI441
Text: •i 7 ñ 2 ñ cm OOCHaib b5b ■ RHN ROHm OPTOELECTRONICS RPI-441 PHOTO INTERRUPTER ABSOLUTE MAXIMUM RATINGS TA=25°C Infrared Emitter Forward Current Reverse Voltage Power Dissipation 50m A 5V 80m W Vr Pd Phototransistor Collector-Emitter Voltage Emitter-Col lector Voltage
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RPJ-441
RPI441
D00131Ã
RPI441
RPI-441
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Untitled
Abstract: No abstract text available
Text: 7 0 2 f i cl cl cì 0 0 0 = 0 0 3 ROHm TTfi • R H U OPTOELECTRONICS RPI-38 PHOTO INTERRUPTER ABSOLUTE MAXIMUM RATINGS Ta=25°C Infrared Emitter: Forward Current Reverse Voltage Power dissipation Phototransistor: Collector Emitter Voltage Emitter-Collector Voltage
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RPI-38
100mW
RPI38
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Untitled
Abstract: No abstract text available
Text: 7û2fl[H el OOtHBlb b5b • RHÍ1 ABSOLUTE MAXIMUM RATINGS TA=25°C Infrared Em itter Forward Current Reverse Voltage Power Dissipation Phototransistor Collector-Emitter Voltage Emitter-Collector Voltage Collector Power Dissipation Operating Temperature
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RPI441
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