em 518 diode
Abstract: em 513 diode diode em 513 diode 1600 rectifier
Text: EM 513, EM 516, EM 518 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A
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Abstract: No abstract text available
Text: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features !"#$ Mechanical Data %&$"' %&$"
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diode em 513
Abstract: em 518 diode
Text: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features !"#$ Mechanical Data %&$"' %&$"
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em 518 diode
Abstract: em 513 diode diode em 513 diode 513 diode 518 EM518
Text: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features !"#$ Mechanical Data %&$"' %&$"
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Untitled
Abstract: No abstract text available
Text: EM513 thru EM518 Pb Free Plating Product Pb EM513 thru EM518 1.0 Ampere DO-41 Package High Voltage Silicon Diode DO-41 Unit: inch mm Features • Low leakage • Low forward voltage drop • High current capability .034(.86) .028(.71) 1.0(25.4)MIN. Low cost
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EM513
EM518
DO-41
DO-41
MIL-STD-202
1260WAVE
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em 518 diode
Abstract: d507 M dp 502 t SW-45 ST333S TO-209AE
Text: Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-500 To Order Previous Datasheet Index Next Data Sheet Bulletin I25171/B ST333S SERIES Stud Version INVERTER GRADE THYRISTORS Features 330A All diffused design Center amplifying gate
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D-500
I25171/B
ST333S
ST333S
O-209AE
O-118)
-24UNF-2A
-16UNF-2A
D-505
em 518 diode
d507 M
dp 502 t
SW-45
TO-209AE
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SMD DIODE 513
Abstract: No abstract text available
Text: 1N4001.1N4007, 1N4007-1300 EM 513, EM 516, EM 518 Silicon Rectifier Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse •—nax . ç/ 2-6 X _ — 5 0 .2000 V
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1N4001.
1N4007,
1N4007-1300
DO-41
UL94V-0
40eel
R0D1RS14
000017S
SMD DIODE 513
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Untitled
Abstract: No abstract text available
Text: MARKTECH INTERNATIONAL 4bE D • 5 7 ^ 5 5 GGDGbfiS 5 ■ LED Luminators NKT T - HI - 3i FEATURES DESCRIPTION: • U niform brightness The LED Lum inator is com posed of a series of side view ing light em itting diodes strategically placed on the ends of a specially designed m olded unit. M axim um
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00006CH
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em 518 diode
Abstract: No abstract text available
Text: PIN Photo Diode TPS705 Applications • Remote Control Systems • Smoke Sensor Features • Small Package • Flourescent Lamp Cut-off Resin is Used • High Sensitivity: lsc = 0.9pA Typ. • Small Dark Current: lD= 1nA (Typ.) • High Speed Response: tr, tf = 100ns (Typ.)
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TPS705
100ns
TLN105B
98-4LEDS
TPS705
em 518 diode
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Untitled
Abstract: No abstract text available
Text: R eflective Sensor M TPSR -1074 A pplicatio n s Bar Code Scanning Fiber Optic Communications Supports Full Duplex Operation Features • Point Source LED with Photo Diode • Narrow Beam Angle • High Reliability in Demanding Environments M A XIM U M RATINGS Ta = 25°C
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MTPSR-10
98-4LEDS
00D17flb
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Untitled
Abstract: No abstract text available
Text: marktech international 1ÔE D s 7 n b s s aaao47Q b TRANSISTOR COUPLER NT5350 GaAs INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS I— • • • • • AC LINE/DIGITAL LOGIC ISOLATOR DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR TELEPHO N E LINE R EC EIV ER
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aaao47Q
NT5350
MT5350
GG00473
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Untitled
Abstract: No abstract text available
Text: LED Luminators APPLICATIONS DESCRIPTION: • Transmissive or transflective LC D backlighter The LED Luminator is com posed of a series of side viewing light emitting diodes strategically placed on the horizontal plane of a specially designed molded acrylic board. Maximum light output and uniformity
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00006CH
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diode 518
Abstract: n00a 6N137
Text: MARKTECH INTERNATIONAL lflE D • 57^55 0000520 b ■ HIGH SPEED COUPLER 6N137 INFRABED LED+ PHOTO IC The 6N137 consists of a high emitting diode and a one chip photo IC. This unit is an 8-lead DIP package. APPLICATIONS • DIGITAL LOGIC ISOLATION • TELE-COMMUNICATIONS
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0D0QS20
6N137
6N137
2500Vrms.
diode 518
n00a
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a6n139
Abstract: Photocoupler Photo-IC lo64ma 6N138 6N139
Text: MARKTE CH INTERNA TIO NA L 1ÔE ]> • PHOTOCOUPLER STTTbSS ÜOQGSE4 3 "Pm-a 5 6N138, 6N139 GaAIAs INFRARED+ PHOTO-IC The 6N138 and 6N139 consist of a GaAIAs infrared emitting diode coupled with a split-Darlington output configuration. A high.speed GaAIAs infrared manufactured with a unique
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6N138,
6N139
6N138
6N139
2500Vrms
35/tS
a6n139
Photocoupler Photo-IC
lo64ma
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6N13S
Abstract: No abstract text available
Text: MARKTECH INTERNATIONAL lfiE D • STTTbSS OQQGSlt 4 HIGH SPEED COUPLER 6N13S, 6N136 INFRARED LED* PHOTO IC The 6N135 and 6N136 consist| off a j high [emitting, diode and a one chip photo diode-translstor. Each unit Is an 8-lead DIP package. APPLICATIONS — K—
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6N13S,
6N136
6N135
6N136
MT5500
6N13S
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T4 4c diode
Abstract: MT6510 MT6500
Text: MARKTECH INTERNATIONAL 571^55 1ÔE D DGGQ527 1 PHOTO IC COUPLER T-<+i -S3 MT6500, MT6510 Unit in mm inches APPLICATIONS • • • • • DIGITAL LOGIC ISOLATION LINE RECEIVER FEEDBACK CONTROL POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTOR
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DQ0Q527
MT6500,
MT6510
MT6500
MT6510
5000Vrms
Ta-25
T4 4c diode
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Untitled
Abstract: No abstract text available
Text: GaAs Infrared E m itter TLN105B A p p lica tio n s • Remote Control System ' Smoke Sensor • Optical Switch Featu res • High Radiant Intensity : lE = 20mW / sr TYP. • Wide Radiation Pattern • Capable of Pulse Operation • Spectrally Com patible with TPS703 PIN Photo Diode
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TLN105B
TPS703
98-4LEDS
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SEM133T
Abstract: SEM133D SEM133DT
Text: SP3T DC-18 GHz SEM133 SERIES • Five Models In Stock in 3 Position Series • Standard Features Include: Normally Open and Latching Models TTL Logic Control, Suppression Diodes • All Models Supplied with Indicator Circuits MODEL NO. FEATURES ACTUATING CURRENT mA
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DC-18
SEM133
DC-18GHZ
SEM133
SEM133D
231-1700IN
SEM133T
SEM133D
SEM133DT
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MTD7030
Abstract: No abstract text available
Text: MARKTECH INTERNA TI ONA L 1ÖE D INFRARED LED r;qi-'n MTEllOO GaAs INFRARED EMITTER STTThSS 0QQ03ÔS H INFRARED LED FOR PHOTO SENSOR APPLICATIONS • R EM O T E C O N T R O L S Y S T E M • OPTICAL SW ITCH FEATURES 1. ANODE 2. CATHODE • Output spectrally compatible with silicon sensor
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00Q03Ã
MTD7030.
30mW/sr.
MTD7030
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Untitled
Abstract: No abstract text available
Text: MARKTECH INT ERN AT IO NAL ~fl7 dF | 57^55 O D D D 1 DÖ □ TRANSISTOR COUPLER 87D 00108 5799655 M A R K T E C H INTERNATIONAL 4N35 GaAs INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS • A C LIN E/D IG IT AL L O G IC ISO LA T O R • D IG ITAL LO G IC/D IG IT A L L O G IC ISO LA T O R
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Untitled
Abstract: No abstract text available
Text: MARKTECH INTERNATIONAL SLOTTED SWITCH IflE D S7Tìt.SS G G Q 0 M 4 4 S MTSS10050 INFRARED LED+ PHOTOIC APPLICATIONS • T IM IN G D E T E C T IO N F O R P R IN T E R S , T Y P E W R IT E R S A N D F A C S IM IL E FEATURES • Optical switch ed ge sensor. • Positioning and rotation sensor.
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MTSS10050
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phototransistor FPT 100
Abstract: No abstract text available
Text: MARKTEC H IN TE RNAT IO NA L ST'HbSS ODOGSaT s IflE D PHOTO IC COUPLER ' T M MT25300, MT25310 J - & 3 Unit in mm Inches APPLICATIONS • DIGITAL LOGIC ISOLATION • LINE RECEIVER • PO W ER SUPPLY CONTROL I I—I L-J -^ • SW ITCHING POW ER SUPPLY
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MT25300,
MT25310
T25300
T25310
0GDQ544
lp-16m
phototransistor FPT 100
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AA N 12110 transistor
Abstract: 0/AA N 12110 transistor
Text: MARKTECH IN TE RN ATI ONAL "fi? Ì F | s 7 lìcìbS5 ODDG11S TRANSISTOR COUPLER 87D 00115 5799655 M A R K T E C H INTERNATIONAL T-H\ MTPC5800, MTPC5810 GaAlAs INFRARED LED+ PHOTO TRANSISTOR The MTPC5800 and MTPC5810 consist of a photo transistor optically coupled to an aluminum gallium arsenide infrared
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ODDG11S
MTPC5800,
MTPC5810
MTPC5800
MTPC5810
TPC5800
AA N 12110 transistor
0/AA N 12110 transistor
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FCD836
Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Text: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Device No. Output PD mW Transistor •c v CEO mA V Diode Vf? V 'f mA v iSO kV Min Current Transfer Ratio ic ^ F @>F @V c e % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30
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FCD836Â
FCD836DÂ
FCD850
FCD850C
FCD850D
FCD850C,
FCD855C
FCD850D,
FCD855D
FCD836
FCD836D
FCD855
FCD860
FCD865
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