2208R
Abstract: fujitsu LVDS vga elo touch fujitsu LVDS pin 30 vga elo touchscreen capactive touch panel controller Fujitsu SAW A 5170
Text: ES-2108/2208 8.4" Open Frame and Rugged Panel Mount Monitor Features NEW • 8.4" LCD supports 800 x 600 pixels and wide operating temperature -0 ~ 50˚ C • Resistive, Capacitive, SAW or IR touchscreen and 3 mm tempered glass options Versatile mounting brackets
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ES-2108/2208
ARK-1000
ES-2208)
ES-2108
ES-2208
2002/95/EC
ES-2108/2208
m-232/USB
RS-232
2208R
fujitsu LVDS vga
elo touch
fujitsu LVDS pin 30 vga
elo touchscreen
capactive touch panel controller
Fujitsu SAW
A 5170
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Untitled
Abstract: No abstract text available
Text: Converter - Brake - Inverter Module PSIPM 50/06 Preliminary Data Sheet C1 V15 U15 H15 A15 A10 L15 J15 D15 A5 V4 Q15 O15 L1 F15 F1 N15 H1 S15 V11 V13 P1 R1 N1 U1 V1 V7 t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev Three Phase
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VID125-12P1
Abstract: No abstract text available
Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 100/12* Short Circuit SOA Capability Square RBSOA 90 A 1200 V 2.8 V Preliminary Data Sheet S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot ECO-TOPTM 1 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1
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121T120
125-12P1
VID125-12P1
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AMP 59974-1 crimper
Abstract: AMP 90277-1 amp 825590-3 90277-1 ferrule crimper pull test 734536-1 AMP 47387 crimper AMP junior power timer contact 734535-1 654149-1
Text: TYCO ELECTRONICS TECHNOLOGY PORTFOLIO Connector Systems / Electromechanical Components Circuit Protection Devices Magnetics Wireless Components Racks and Panels Antennas, GPS Antennas, Integrated Antenna Systems Touch Screens Resistors and Inductors Printed Circuit Board
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Abstract: No abstract text available
Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 75/06* Preliminary Data Sheet S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 V3 ECO-TOPTM 1 V6 t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev Symbol
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POWERSEM
Abstract: No abstract text available
Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 50/06* Preliminary Data Sheet 48 A 600 V 2.3 V S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff A15 A7 A9 G15 V12 V13 N15 V9 V10
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42T60
75-06P1
POWERSEM
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ML-1 94V-0
Abstract: E-36952 TSE397C-333ML MIL-A-46106 str 6709 MIL-A-46146 str 6708 Mil-S-46163A semiconductors cross index semiconductors cross reference
Text: Why MG Chemicals? At MG Chemicals, we realize that our number one asset is you, our customer. ISO Quality Standards. Since 1955, M.G. Chemicals has provided the North American electronics industry with a full line of high performance chemicals and accessories. The M.G. Chemicals manufacturing facility operates
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835-P-20
8420-P
8701-10ML,
8702-10ML,
8703-10ML,
8704-10ML)
416-E
416-ES
416-K
416-RP
ML-1 94V-0
E-36952
TSE397C-333ML
MIL-A-46106
str 6709
MIL-A-46146
str 6708
Mil-S-46163A
semiconductors cross index
semiconductors cross reference
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VMIVME-3126
Abstract: AMP 925486-1 connector 64 pin eurocard crimp VME 6U DIMENSIONS 217F a 3126
Text: VMIVME-3126 High Resolution, Isolated Analog-to-Digital Converter Board • • • • • • • • • • • • • • 8 or 16 isolated input channels with active guards 16-bit data 1,500 VDC 1,000 VAC isolation, input-to-input and input-to-VMEbus
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VMIVME-3126
16-bit
A/400
VMIVME-3126.
VMIVME-3126
AMP 925486-1
connector 64 pin eurocard crimp
VME 6U DIMENSIONS
217F
a 3126
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AP062
Abstract: AM0201
Text: ss m i PACIFIC MONOLITHICS DA TASH EET G aAs MMIC AMPLIFIERS FEATURES o o o SMALL SIZE HIGH GAIN LOW CURRENT SINGLE SUPPLY VOLTAGE o CASCADABLE o LOW NOISE AND MEDIUM POWER OPTIONS o 10 TO 30 dB GAIN BLOCKS Pacific Monolithics offers a variety of GaAs FET MMIC amplifiers in surface-mount packages for microstrip
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Elo Power 2.8 mm
Abstract: No abstract text available
Text: 74026 74026 • BLADE MATING SEE NOTE 5, 5.92 1 2 3 4 6 7 8 9 'T 1.06 = = = = = = = = SEE NOTE 2. BLADE 2 I LENGTH MATING 1 2 3 4 6 7 8 9 7.5 mm 9.0 mm 10.5 mm 12.0 mm 7.5 mm 9.0 mm 10.5 mm 12.0 mm = = = = = = = = LENGTH 7.5 mm 9.0 mm 10.5 mm 12.0 mm 7.5 mm
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SD-74026-00I
Elo Power 2.8 mm
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Untitled
Abstract: No abstract text available
Text: , „ MITSUBISHI RF POWER MODULE 0017 3 b 0 <Ì2G • M 67712 220-225MHZ, 12.5V, 30W, SSB MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm PIN : P in : RF INPUT VCC1 : 1st. DC SUPPLY @VBB : BASE BIAS SUPPLY ®VCC2 : 2nd. DC SUPPLY ®PO : RF O UTPUT
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220-225MHZ,
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A0322
Abstract: No abstract text available
Text: Ordering number : EN5209 Wide-Bandwidth Output Module {video pack VPS10 No. 5209 CRT Display Video Output Amplifier: High-Voltage, Wideband Amplification Features Package Dimensions • H igh ou tp u t v o lta g e and w id e b a n d w id th m ak e the unit: mm
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EN5209
VPS10
15-pin
A0322
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V23540-M1000-Z110
Abstract: No abstract text available
Text: TH IS DRAWING IS UNPUBLISHED VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG Q RELEASED FOR PUBLICATION FREI FUER VEROEFFENTLICHUNG ry a m p COPYRIGHT 20 iN P O R P O R A T F n BY A M P INCORPORATED. ,20 MATED WITH: PASSEND ZU: ALL RIGHTS RESERVED. ALLE RECHTE VORBEHALTEN
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V23540-M1000-Z119
V23540-M1000-Z110
V23540-M1000-Z111
09MAY94
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uc741
Abstract: pc741c uPC741 PC741 741g2 PC741 C
Text: DATA SHEET À BIPOLAR ANALOG INTEGRATED CIRCUIT PC741 GENERAL PURPOSE OPERATIONAL AMPLIFIER DESCRIPTION FEATURES T h e /¿PC741 is a g e n e ra l p u rp o se o p e ra tio n a l a m p li • In te rn al fre q u e n c y c o m p e n s a tio n fie r h avin g in te rn a l fre q u e n c y c o m p e n s a tin g circuits.
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uPC741
uPC741
uc741
pc741c
PC741
741g2
PC741 C
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BGA2022 MMIC mixer Objective specification Supersedes data of 1999 Jan 14 Philips Sem iconductors 1999 Feb 25 PHILIPS Philips Semiconductors Objective specification MMIC mixer BGA2022 FEATURES PINNING SOT363 • Large frequency range:
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BGA2022
BGA2022
OT363
125006/3100/03/pp8
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BCR10CM
Abstract: mitsubishi triac
Text: MITSUBISHI SEMICONDUCTOR TRIAC BCR10CM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR10CM OUTLINE DRAWING D im ensions in mm 10.5 MAX 4.5 LU U LU * © • IT (RMS) . 10A
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BCR10CM
00V/600V
O-22Q
BCR10CM
mitsubishi triac
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Untitled
Abstract: No abstract text available
Text: MOTORCLA SC XSTRS/R F 12E D | b3b?2SM 00flS2fc,l T | 7=3S~29 r - MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M J D 112 PNP M J D 117 Com plem entary Darlington Pow er Transistors D P A K For Surface M ount Applications Designed for general purpose power and switching such as output or driver
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00flS2fc
forTIP110-TIP117
MJD112
MJD117
00flS5bt.
MJD112
MJD117
T-33-21
MJD112-1)
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Mil-55681
Abstract: IC MARKING A60 marking a86 SN62
Text: APPLICATION SPECIFIC CAPACITORS m u ffa ta HIGH FREQUENCY CERAMIC CAPACITORS /aaerator ia Geefrcn/es MA/MB Series OUTSTANDING CHARACTERISTICS % A , ' \ . . . . . . . . . \ \ " ‘ \ r -I* • Miniature size ■ Very high Q at high frequencies ■ High RF power capabilities
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Mil-55681
CG01-H
IC MARKING A60
marking a86
SN62
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Untitled
Abstract: No abstract text available
Text: l2C BUS Control 4-Input 1-Output AV Switch MM1311 MPCSttM: Monolithic IC MM1311 This IC is a 4-input 1-output AV switch with l2C control, developed for use in televisions. 1. Serial control by l2C BUS. 2. 4 inputs, 1 output. 3. Video and audio system switches can be controlled independently.
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MM1311
MM1311AD
M1311BD
SDIP-32A
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Untitled
Abstract: No abstract text available
Text: J u ly 1 9 9 6 N NDS8958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T hese d u al N - a n d P -C hannel e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ational's proprietary, high ceil density, DMOS
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NDS8958
NDS8958
193tQ
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Untitled
Abstract: No abstract text available
Text: Audio ICs Preset equalizer sound control P.S.C IC BA3842F The BA3842F is a preset graphic equalizer 1C with dynam ic bass boost which is designed for audio equipm ent. •A p p lic a tio n s M ini-com ponent stereos M icro-com ponent stereos Radio cassette recorders with CD
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BA3842F
BA3842F
400Hz
30kHz
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Untitled
Abstract: No abstract text available
Text: Bring number: EN 5109 Monolithic Linear IC LA7416,7416M No. 5109 SAmro Playback Amplifier and Record Amplifier for VHS VCRs Overview Package Dimensions T h e L A 7 4 1 6 and L A 7 4 1 6 M are playback and record am plifier IC s fo r four-head V H S V C R s. W hen used in conjunction with
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LA7416
7416M
3196-DIP30SD
LA7416]
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Complementary MOSFET Half Bridge
Abstract: NDS8858H
Text: J u ly 1 9 9 6 N NDS8858H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide
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NDS8858H
NDS8858H
0D33347
Complementary MOSFET Half Bridge
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MOSFET 4466
Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES
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BF1102
OT363
BF1102
MOSFET 4466
4466 8 pin mosfet pin voltage
4466 mosfet
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