DIODE PP602
Abstract: pp602 PP701 pp601 40 PP601 PP1101W PS1101RA PS1101WA PS1102HA PS1191RA
Text: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number
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PDT323B-5
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Low Profile Photo Darlington-Transistor T-1 3/4 PDT323B-5 Features ․Extra high radiant sensitivity ․Very low temperature drift ․Suitable for near infrared radiation ․High sensitivity ․Pb free ․The product itself will remain within RoHS compliant version.
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PDT323B-5
PDT323B-5
NoDPT-032-022
date07-20-2005
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 5mm Low Profile Photo Darlington-Transistor T-1 3/4 PDT323B-5 Features ․Extra high radiant sensitivity ․Very low temperature drift ․Suitable for near infrared radiation ․High sensitivity ․Pb free Descriptions ․PDT323B-5 is an extra high sensitive monolithic
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PDT323B-5
PDT323B-5
DPT-032-022
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TRANSISTOR DNH
Abstract: PS5022 PS1191RA PP1101W PS1101RA PS1101WA PS1102HA PS1192FA PS1192HA peak spectral response 900 nm photo detector
Text: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number
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30MIN.
15MIN.
17MIN.
14MIN.
TRANSISTOR DNH
PS5022
PS1191RA
PP1101W
PS1101RA
PS1101WA
PS1102HA
PS1192FA
PS1192HA
peak spectral response 900 nm photo detector
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pp601 40
Abstract: DIODE PP602 PS5022 PS3022 PS3072 PS3322 PS4032 PS5042 PS5042-2 PP701
Text: THROUGH-HOLE SHAPE - PHOTO TRANSISTOR n Photo Transistor Shape Part No. Ta= 25°C Features Wavelength of Peak Sensitivy l P TYP. v Photo Current IC MIN. TYP. V CE Spatial Distribution The typical distribution example of each shape is shown below Response
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PS3022
PS3322
PS3072
FH1011
DN311
KR311
DNP511
PS5132
28MIN.
16MIN.
pp601 40
DIODE PP602
PS5022
PS3022
PS3072
PS3322
PS4032
PS5042
PS5042-2
PP701
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FillFactory
Abstract: BK7G18 glass STAR1000 STAR1000 FPGA BK7G18 CYIS1SM1000AA-HHC CYIS1SM1000AA-HQC JESD22 STAR1000-BK7 STAR250
Text: STAR1000 STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Key Features The STAR1000 sensor has the following characteristics: • Integrating 3-transistor Active Pixel Sensor. • 1024 by 1024 pixels on 15 µm pitch. • Radiation tolerant design. • On-chip double sampling circuit to cancel Fixed Pattern
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STAR1000
STAR1000
10-bit
JLCC-84
BK7G18
FillFactory
BK7G18 glass
STAR1000 FPGA
CYIS1SM1000AA-HHC
CYIS1SM1000AA-HQC
JESD22
STAR1000-BK7
STAR250
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FillFactory
Abstract: STAR1000 STAR1000 FPGA BK7G18 CYIS1SM1000AA-HHC CYIS1SM1000AA-HQC JESD22 STAR1000-BK7 STAR250 CMOS image sensor with global shutter
Text: STAR1000 STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Key Features The STAR1000 sensor has the following characteristics: • Integrating 3-transistor Active Pixel Sensor. • 1024 by 1024 pixels on 15 µm pitch. • Radiation tolerant design. • On-chip double sampling circuit to cancel Fixed Pattern
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STAR1000
STAR1000
10-bit
JLCC-84
BK7G18
FillFactory
STAR1000 FPGA
CYIS1SM1000AA-HHC
CYIS1SM1000AA-HQC
JESD22
STAR1000-BK7
STAR250
CMOS image sensor with global shutter
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ADC hard radiation
Abstract: Star1000 Radiation Detector BK7G18 glass FillFactory STAR1000 1M Pixel Radiation Hard BK7G18 image sensor mono medical temperature sensor STAR1000BK7
Text: STAR1000 STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Key Features The STAR1000 sensor has the following characteristics: • Integrating 3-transistor Active Pixel Sensor. • 1024 by 1024 pixels on 15 µm pitch. • Radiation tolerant design. • On-chip double sampling circuit to cancel Fixed Pattern
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STAR1000
STAR1000
10-bit
JLCC-84
BK7G18
ADC hard radiation
Radiation Detector
BK7G18 glass
FillFactory
STAR1000 1M Pixel Radiation Hard
image sensor mono
medical temperature sensor
STAR1000BK7
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cosmo 1010 817
Abstract: cosmo 817 K1010 cosmo 1010 817 SHARP S21ME4 Liteon PC817 clare relay 1a15 KSD203DC2 aqy210 COSMO 1000 817 MCT2E CIRCUIT DIAGRAM
Text: Photo Coupler Photo Coupler High Speed Function Type Transistor output Type Absoute Maximum Ratings Model Number Internal Connection IF VCEO IC Diagram mA (V) (mA) Viso (Vrms) Electro-optical Characteristics VF max (V) VCE (sat) max (V) CTR% Safty standards approval
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P3-1A15
P3-1A16
P3-1A17
P1-1A15
KW1S53FC
KW1S54FC
KW1S55FC
KW1S56FC
KW1S57FC
cosmo 1010 817
cosmo 817
K1010 cosmo 1010 817
SHARP S21ME4
Liteon PC817
clare relay 1a15
KSD203DC2
aqy210
COSMO 1000 817
MCT2E CIRCUIT DIAGRAM
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MAX280
Abstract: SSC-PTR202 SSC-PTR202-IX0 SMD 5c Transistor
Text: *Customer: SPECIFICATION ITEM MODEL PART NO. Photo Transistor SSC-PTR202-IX0 [Contents] 1. Features 2. Absolute maximum ratings 3. Electro-optical characteristics 4. Soldering profile 5. Outline dimension 6. Packing 7. Reel packing structure 8. Precaution for use
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SSC-PTR202-IX0
SSC-QP-0401-06
SSC-PTR202
MAX280
SSC-PTR202
SSC-PTR202-IX0
SMD 5c Transistor
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everlight Ha 1.0
Abstract: No abstract text available
Text: 4 PIN LO ONG CR REEPAG GE SOP P P PHOTOT TRANSISTOR PHOTO P OCOUPL LER E EL101X-G Serie es Schematic F Features: • Free halo ogens compliiant • Current trransfer ratio CTR: 50 0~600% at IF =5mA, VCE =5V (CTR: 63 3~320% at IF =10mA, VCE =5V) • High isola
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EL101X-
DPC-0000037
everlight Ha 1.0
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CL-200IR
Abstract: No abstract text available
Text: 表面実装型 チップフォトトランジスタ CPT-230シリーズ Surface Mountable Chip Photo-transistor CPT-230 Series 1.7 3.2 素子位置 Position of die (0.5) •Features 1. チップ型フォトトランジスタで上面 及び下面実装可能。
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CPT290
CPT-290
CL-200IR
CL200IR
CL-200IR
20mW/Sr
10mW/Sr
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ic 8259
Abstract: OPB0642 opb064
Text: Silicon Photo Transistor OPB0642 1. Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um : Emitter Electrode : Base Electrode
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OPB0642
160um
000lux
2856K.
100uA
ic 8259
OPB0642
opb064
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Untitled
Abstract: No abstract text available
Text: Silicon Photo Transistor OPB0642 1. Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220 30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um : Emitter Electrode : Base Electrode
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OPB0642
160um
000lux
2856K.
100uA
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GaAs 1000 nm Infrared Diode,
Abstract: No abstract text available
Text: Infrared Products Explanation o f Part Number: H I CD R B _5 © A A - @ ® • _c @ 1.Infrared products kinds: HIR: infrared emitter. HPD: photo diode. HPT: photo transistor. 2.Shape distinguish: B: bell round type. R: rectangular type. MIB: miniature bell type.
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dual infrared transistor
Abstract: GaAs 1000 nm Infrared Diode,
Text: Infrared Products E x p lan atio n o f P a rt Num ber: H I B R l.lnfrared products kinds: 2.Shape distinguish: HIR: infrared emitter. HPD: photo diode. HPT: photo transistor. B: bell round type. R: rectangular type. MIB: m iniature bell type. CL: chip SM D type.
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LTK4N33
Abstract: No abstract text available
Text: S PECIA LIST Typ« ; Type Darington .Single Photo— transistor Phototransistor - .V Model No. LTK4N25V LTK4N26V LTK4N28V LTK4N35V LTK4N37V Absolute Maximum Ratings .• Collector-Emitter Isolation Current Transfer Internal Outline . Voltage Voltage Connection
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LTK4N25V
LTK4N26V
LTK4N28V
LTK4N35V
LTK4N37V
LTK4N33
LTK4N33
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TLP850
Abstract: TLP1240 TLP852 TLP851 TLP807 TLP809 TLP8 TLP1225 TLP1230
Text: F7 Electro-optical Characteristics Ta-25*C Classification Photo Darlington Transistor Output VCE MAX (V) lo MAX (nA) 250 Typ« No. Gap (mm) Slit Width (mm) lF(mA) V ce(V) TLP507A 3 1 30 10 2 30 TLP850 5 1 40 10 2 30 250 TLP851 5 0.5 20 10 2 30 250 MIN TLP852
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Ta-25
TLP507A
TLP850
TLP851
TLP852
TLP853
TLP862
TLP863
TLP864
TLP865
TLP1240
TLP807
TLP809
TLP8
TLP1225
TLP1230
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audio filter vcf
Abstract: edge detector robot
Text: NJL5172K/72KF P0HTO REFLECTOR • GENERAL DESCRIPTION T he NJL5172K./72KF ¡is the single-in-line ■ OUTLINE typ. LED photo Reflector, which consist o f high output power Siphoto transistor. and Unit ! mm super miniature, super thin type and high sensitive
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NJL5172K/72KF
NJL5172K
/72KF
NJL5171K
NJL5I72K.
/77T/
audio filter vcf
edge detector robot
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MCA255
Abstract: MCA230 mca231 MCA255 equivalent
Text: QUALITY TECHNOLOGIES PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 DESCRIPTION The MCA230, MCA231 and MCA255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington transistor. The device is supplied in a standard plastic
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MCA230
MCA231
MCA255
MCA230,
MCA255
MCA230/255
C2090
MCA255 equivalent
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transistor c111
Abstract: C111 transistor transistor c1124 C1116 transistor MCL610 c1116 MCL611 c1117 C1119 mcl600
Text: 112 A* O p * t o is W A, l a t o o r s~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR
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MCT210
MCT26
MCT66
transistor c111
C111 transistor
transistor c1124
C1116 transistor
MCL610
c1116
MCL611
c1117
C1119
mcl600
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ISO-2859-1
Abstract: PT202MR0MP1 EIAJ C-3
Text: SPEC. No. SH AR P ISSUE DG036004A Oct/28/03 CONPOUND SEMICONDUCTOR DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION TECHNICAL LITERATURE DEVICE TECHNICAL LITERATURE FOR Photo Transistor MODEL No. PT202MR0MP1 * The technical literature is subject to be changed without notice *
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DG036004A
Oct/28/03
PT202MR0MP1
DG036004A
40kHz,
ISO-2859-1
PT202MR0MP1
EIAJ C-3
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Transistor C1061
Abstract: NPN Transistor C1061 C1061 transistor transistor c1047 power Transistor C1061 C1061 npn c1050 transistor C1057 EL 4N35 035 MCT8 opto
Text: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR
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MCT210
MCT26
MCT66
Transistor C1061
NPN Transistor C1061
C1061 transistor
transistor c1047
power Transistor C1061
C1061 npn
c1050 transistor
C1057
EL 4N35 035
MCT8 opto
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2N3393
Abstract: CON10 MICRO ELECTRONICS ltd transistor
Text: 2N3393 NPN SILICON TRANSISTOR DESCRIPTION 2N3393 is NPN silicon planar transistor designed as small signal amplifiers. ABSOLUTE MAXIMUM RATINGS VcEO VcBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation
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2N3393
O-92B
100mA
360mW
20MHz
Mar-99
CON10
MICRO ELECTRONICS ltd transistor
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